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1. 发明专利

JP2009194393A Manufacturing method of reluctance element 有权
标题翻译：制动元件的制造方法
公开(公告)号：JP2009194393A
公开(公告)日：2009-08-27
申请号：JP2009107971
申请日：2009-04-27
申请人： Toshiba Corp , 株式会社東芝
发明人： UEDA TOMOMASA , AIKAWA HISANORI , YOSHIKAWA MASATOSHI , SHIMOMURA NAOHARU , NAKAYAMA MASAHIKO , IKEGAWA SUMIO , HOSOYA KEIJI , NAGAMINE MAKOTO
IPC分类号： H01L43/12 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To make it possible to manufacture a reluctance element capable of reducing an inversion current when magnetization is inverted in a simple process.
SOLUTION: The manufacturing method comprises the steps of forming a bottom electrode film on a substrate, forming a laminated film having a laminated structure of a first magnetic layer the magnetization direction of which provides an adhered magnetization adhered layer, a tunnel barrier layer and a second magnetic layer the magnetization direction of which provides a variable magnetization free layer on the bottom electrode film, forming a first top electrode film on the laminated film, patterning the first top electrode film to form a first top electrode, patterning the first top electrode to the second magnetic layer of the laminated layer as a mask, forming an insulating film so as to cover the first top electrode, exposing the top face of the first top electrode, forming a second top electrode film so as to cover the first top electrode, patterning the second top electrode film to form a second top electrode, and processing the second top electrode to the bottom electrode film as a mask with self-alignment.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了使得可以在简单的过程中制造当磁化反转时能够降低反转电流的磁阻元件。解决方案：制造方法包括以下步骤：在基板上形成底电极膜，形成具有层叠结构的叠层膜，该叠层结构具有其磁化方向提供粘附的磁化粘附层的第一磁性层，隧道势垒层以及第二磁性层，其磁化方向在底部电极膜上提供可变的磁化自由层，在层叠膜上形成第一顶部电极膜，图案化第一顶部电极膜以形成第一顶部电极，使第一顶部电极到层叠层的第二磁性层作为掩模，形成绝缘膜以覆盖第一顶部电极，暴露第一顶部电极的顶面，形成第二顶部电极膜以覆盖第一顶部电极，图案化第二顶部电极膜以形成第二顶部电极，以及将第二顶部电极处理到底部电极膜作为具有自我对准的面具。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2003142482A METHOD OF MANUFACTURING OXYNITRIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003142482A
公开(公告)日：2003-05-16
申请号：JP2001335011
申请日：2001-10-31
申请人： TOSHIBA CORP
发明人： NAGAMINE MAKOTO , YASUDA NAOKI , SATAKE HIDEKI
IPC分类号： H01L29/78 , H01L21/316 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To form a silicon oxynitride film in which permittivity is high, an interface state and fixed charge are reduced, and an increase in film thickness when a high dielectric film is formed on its surface is prevented. SOLUTION: A silicon oxide film is nitrided by using N( S) in a quartet state, which is a ground state of a nitrogen atom radical, more preferably N( D) or N( P) in a double state, which is an excited state of a nitrogen atom radical, to form a silicon oxynitride film in which nitrogen concentration is high in the vicinity of the surface and low in the vicinity of the interface on the side of a substrate.

3. 发明专利

JP2003078132A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003078132A
公开(公告)日：2003-03-14
申请号：JP2001264518
申请日：2001-08-31
申请人： Toshiba Corp , 株式会社東芝
发明人： YASUDA NAOKI , SATAKE HIDEKI , NAGAMINE MAKOTO , MURAOKA KOICHI
IPC分类号： H01L29/78 , H01L21/31 , H01L21/316 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing such a semiconductor device that is provided with a gate insulation film using an SiON base insulation film with small EOT and superior boundary characteristic.
SOLUTION: An SiON film is used as a base insulation film for plasma nitrization. The base SiON film is formed through thermal oxidization/nitrization of a Si substrate or deposition of an oxidized/nitided film on the Si substrate, and then oxidization step (plasma oxidization or O
2 oxidization) is followed by plasma nitirization. Thus, superior boundary characteristic with EOT of 1.3 nm or less and greatly reduced leak current can be realized.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种制造这种半导体器件的方法，该半导体器件使用具有小的EOT和优异的边界特性的SiON基底绝缘膜设置有栅极绝缘膜。解决方案：使用SiON膜作为等离子体氮化的基础绝缘膜。通过Si衬底的热氧化/氮化或Si衬底上的氧化/氮化膜的沉积形成基底SiON膜，然后进行氧化步骤（等离子体氧化或氧化氧化）等离子体氮化。因此，可以实现具有1.3nm以下的EOT的优异的边界特性，并且可以大大降低漏电流。

4. 发明专利

JP2011071352A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2011071352A
公开(公告)日：2011-04-07
申请号：JP2009221569
申请日：2009-09-25
申请人： National Institute Of Advanced Industrial Science & Technology , Toshiba Corp , 株式会社東芝 , 独立行政法人産業技術総合研究所
发明人： KAI TADASHI , NISHIYAMA KATSUYA , NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , DAIBO TATATOMI , NAGAMINE MAKOTO , NAKAYAMA MASAHIKO , SHIMOMURA NAOHARU , YODA HIROAKI , YAKUSHIJI HIROSHI , YUASA SHINJI , KUBOTA HITOSHI , NAGAHAMA TARO , FUKUSHIMA AKIO , ANDO KOJI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a spin-transfer-torque writing type magnetoresistive element with thermal stability and low current consumption. SOLUTION: The magnetoresistive element includes a first magnetic layer 3 which has an easy axis of magnetization in a direction vertical to a film surface and has variable magnetization direction, a second magnetic layer 2 which has an easy axis of magnetization in the direction vertical to the film surface, and a first nonmagnetic layer 4 provided between the first magnetic layer 3 and second magnetic layer 2. The first magnetic layer 3 is made of a ferromagnetic material which includes a CoPd alloy or CoPt alloy having Co and Pd or Co and Pt laminated alternately on an atomically close-packed plane thereof, and has a (c) axis in the direction vertical to the film surface. The magnetization direction of the first magnetic layer 3 varies with a bidirectional current penetrating the first magnetic layer 3, first nonmagnetic layer 4 and second magnetic layer 2. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有热稳定性和低电流消耗的自旋转矩扭矩书写型磁阻元件。解决方案：磁阻元件包括第一磁性层3，其在垂直于膜表面的方向上具有易磁化轴并且具有可变的磁化方向;第二磁性层2，其在方向上具有易磁化轴设置在第一磁性层3和第二磁性层2之间的第一非磁性层4.第一磁性层3由包含Co和Pd或Co的CoPd合金或CoPt合金的铁磁材料制成并且Pt在其原子紧密堆积的平面上交替层压，并且在垂直于膜表面的方向上具有（c）轴。第一磁性层3的磁化方向随着穿过第一磁性层3，第一非磁性层4和第二磁性层2的双向电流而变化。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2007005555A Magnetoresistive-effect element and magnetic random-access memory 有权
标题翻译：磁感应元件和磁性随机存取存储器
公开(公告)号：JP2007005555A
公开(公告)日：2007-01-11
申请号：JP2005183718
申请日：2005-06-23
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGAMINE MAKOTO , NAGASE TOSHIHIKO , IKEGAWA SUMIO , NISHIYAMA KATSUYA , YOSHIKAWA MASAHISA
IPC分类号： H01L43/08 , G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/228
摘要： PROBLEM TO BE SOLVED: To propose a magnetoresistive-effect element capable of making an improvement in a heat resistance and the improvement in an MR ratio compatible. SOLUTION: The magnetoresistive-effect element has a first surface and a second surface, and has a first magnetic layer 113 having a first standard-electrode potential V, a second magnetic layer 111, and a barrier layer 112 formed between the first surface of the first magnetic layer 113 and the second magnetic layer 111. The magnetoresistive-effect element further has a cap layer 114 brought into contact with the second surface of the first magnetic layer 113 formed of the alloy of a first metallic material M1 having a second standard-electrode potential V1 lower than the first standard-electrode potential V, and a second metallic material M2 having a third standard-electrode potential V2 higher than the first standard-electrode potential V and composed of a non-magnetic material. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提出能够提高耐热性和改善MR比的兼容性的磁阻效应元件。解决方案：磁阻效应元件具有第一表面和第二表面，并且具有第一磁性层113，其具有第一标准电极电位V，第二磁性层111和形成在第一和第二表面之间的阻挡层112 第一磁性层113和第二磁性层111的表面。磁阻效应元件还具有与第一金属材料M1的合金形成的第一磁性层113的第二表面接触的盖层114，第一金属材料M1具有第二标准电极电位V1低于第一标准电极电位V，第二金属材料M2具有比第一标准电极电位V高的第三标准电极电位V2并由非磁性材料构成。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2004119899A Manufacturing method for semiconductor device, and semiconductor device 审中-公开
公开(公告)号：JP2004119899A
公开(公告)日：2004-04-15
申请号：JP2002284496
申请日：2002-09-27
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGAMINE MAKOTO , SATAKE HIDEKI , SHIMIZU TAKASHI , SUDO HIROYUKI , SEKINE KATSUYUKI
IPC分类号： H01L21/318 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To form a silicon oxynitride film having high permittivity and a reduced interface level and/or fixed charge wherein an increase in film thickness is suppressed when a high dielectric film is formed on the surface.
SOLUTION: In a nitriding process for a silicon oxide film using nitrogen radical, the temperature T of a substrate in a nitriding atmosphere is made to give D=D
0 ×exp(-ΔE/RT) satisfying D≤Tox
2 /t, where D denotes the diffusion coefficient of the nitrogen radical in the oxide film, Tox denotes the thickness of the oxide film, t denotes a nitriding time, D
0 denotes the pre-exponential factor of the diffusion coefficient, ΔE denotes activation energy for the diffusion coefficient, and R denotes a gas constant.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2001015504A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001015504A
公开(公告)日：2001-01-19
申请号：JP18512299
申请日：1999-06-30
申请人： TOSHIBA CORP
发明人： NAGAMINE MAKOTO , ITO HITOSHI
IPC分类号： H01L21/8247 , H01L21/31 , H01L21/316 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device having a gate oxide film which is excellent in dielectric breakdown strength and high speed operation characteristic. SOLUTION: This manufacturing method includes, a process (sacrifice oxidizing process) forming a first oxide film by oxidizing the surface of semiconductor in an atmosphere containing oxygen active species, a process eliminating the first oxide film, and a process (gate oxidizing process) forming a second oxide film 1031 by oxidizing the surface of the semiconductor after the first oxide film is eliminated. In this case, the process forming the second oxide film is provided with a process oxidizing the surface of the semiconductor at a first oxidizing temperature and a process oxidizing the surface of the semiconductor at a second oxidizing temperature higher than the first oxidizing temperature.

8. 发明专利

JP2000277414A SOURCE WAFER FOR ELECTRON BEAM EXPOSURE AND SEMICONDUCTOR MANUFACTURING DEVICE USING THE SAME 失效
公开(公告)号：JP2000277414A
公开(公告)日：2000-10-06
申请号：JP8073999
申请日：1999-03-25
申请人： TOSHIBA CORP
发明人： WATANABE HIROSHI , NISHIYAMA AKIRA , NAGAMINE MAKOTO , TAKAGI SHINICHI
IPC分类号： H01L21/027 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To improve reliability of a lithography technique while acquiring high resolution and short throughput by forming an extremely thin metallic film on a wafer surface facing a target substrate, forming a p-n junction or a Schottky junction on a patterning metallic film thereon, and forming a metallic film on the wafer rear. SOLUTION: An aluminum film is applied to a part excepting an alignment window of on the rear surface a source wafer which does not face a target wafer. An extremely thin aluminum film is applied to a source wafer surface and an aluminum film which is subjected to patterning is applied thereon. An electrode is provided on the aluminum film and the electrode is made a potential base. A base of a window of thick aluminum constituted by patterning is provided with a p-well and an n-diffusion layer and hot carrier is activated in a p-n junction. The hot carrier passes through an extremely thin aluminum film and is emitted to vacuum, and desorbs oxygen atom by interaction with oxygen atoms. The p-n junction can be a Schottky junction.

9. 发明专利

JPH09148543A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09148543A
公开(公告)日：1997-06-06
申请号：JP30596695
申请日：1995-11-24
申请人： TOSHIBA CORP
发明人： NAGAMINE MAKOTO , SATAKE HIDEKI , TAKAGI SHINICHI , ITO HITOSHI
IPC分类号： H01L29/78 , H01L21/318 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To form a high-reliability silicon nitride oxide film by reforming the silicon nitride oxide film formed by nitriding a silicon oxide film by exposing it to a gas plasma containing molecules having oxygen atoms. SOLUTION: A P-type silicon substrate 11 is exposed to a dry oxygen atmosphere at 1000 deg.C, a thermal oxidation silicon film 5nm thick is formed, and the thermal oxidation silicon film is nitrified and a silicon nitride oxide film 20, which becomes a gate oxide film by nitrifying a thermal oxidation silicon film, is formed by exposing to an ammonia gas atmosphere with a 10% concentration for 5 minutes at 1000 deg.C. Then, a p-type silicon substrate 11 is exposed for 8 minutes in oxygen radical atmosphere at 900 deg.C, the silicon nitride oxide film 20 is reoxidized again, and an oxynitride film is formed as a gate oxide film 13. O2 gas is used as an oxidation seed source. By doing this, a trap site within the silicon nitride oxide film 20, generated in a forming process for the silicon nitride oxide film 20 by nitrifying the silicon oxide film, can be efficiently eliminated and the generation of electron trap can be suppressed.

10. 发明专利

JP2014135449A Magnetoresistance effect element and method of manufacturing the same 审中-公开
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：JP2014135449A
公开(公告)日：2014-07-24
申请号：JP2013003838
申请日：2013-01-11
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGAMINE MAKOTO , IKENO DAISUKE , UEDA KOJI , NISHIYAMA KATSUYA , NATORI KATSUAKI , YAMAKAWA KOJI
IPC分类号： H01L43/10 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To obtain a magnetoresistance effect element having a high MR ratio.SOLUTION: The magnetoresistance effect element of the present embodiment includes: a first magnetic layer; a tunnel barrier layer formed on the first magnetic layer; a second magnetic layer formed on the tunnel barrier layer; an insulating layer being in contact with an end of the first magnetic layer or the second magnetic layer; and a boron adsorbing layer being in contact with either an upper surface of the first magnetic layer or a lower surface of the second magnetic layer. The concentration of boron is lower at the end of the first magnetic layer or the second magnetic layer than at the center thereof. The insulating layer contains a metal selected from C, N, Mg, Al, Ti, V, Cr, Mn, Co, Ni, Fe, Zr, Mo, Nb, La, Ce, Hf, Ta, and W.
摘要翻译：要解决的问题：获得具有高MR比的磁阻效应元件。解决方案：本实施例的磁阻效应元件包括：第一磁性层; 形成在所述第一磁性层上的隧道势垒层; 形成在隧道势垒层上的第二磁性层; 绝缘层与所述第一磁性层或所述第二磁性层的端部接触; 以及与第一磁性层的上表面或第二磁性层的下表面接触的硼吸附层。在第一磁性层或第二磁性层的末端，硼的浓度比在其中心低。绝缘层包含选自C，N，Mg，Al，Ti，V，Cr，Mn，Co，Ni，Fe，Zr，Mo，Nb，La，Ce，Hf，Ta和W.

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