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1. 发明专利

JPS61222911A SYNTHESIS OF PHOSPHORATED COMPOUND 失效
公开(公告)号：JPS61222911A
公开(公告)日：1986-10-03
申请号：JP6442785
申请日：1985-03-28
申请人： TOSHIBA CORP
发明人： TERAJIMA KAZUTAKA , WATANABE MASAYUKI , KASAMI AKINOBU
IPC分类号： C30B29/40 , C01B25/08 , C30B15/00
摘要： PURPOSE:To produce a high-purity phosphorated compound economically in high yield, by the liquid-phase reaction of a group III element with P in a pressurized inert gas atmosphere. CONSTITUTION:Phosphorus 21 is put into the quartz crucible 13 and covered with a group III element 22 (e.g. Ga) and an encapsulation material 23 having low water content. The crucible 13 is placed in the susceptor 14 and covered with the heat-shielding material 16. The inside of the chamber 11 is evacuated, and inert gas is introduced into the chamber 11 to a pressure of 300-700atm. The high-frequency coil 15 is energized to heat the crucible 13 at 700-1,300 deg.C to melt the phosphorus 21 and the group III element 23. A liquid-phase reaction takes place to form a crystal of the compound of phosphorus and the group III element.

2. 发明专利

JPH01282187A PRODUCTION OF SINGLE CRYSTAL OF OXIDE SEMICONDUCTOR 失效
公开(公告)号：JPH01282187A
公开(公告)日：1989-11-14
申请号：JP11054688
申请日：1988-05-09
申请人： TOSHIBA CORP
发明人： NOMURA SHIYUNJI , YOSHINO HISASHI , ANDO TAKESHI , KASAMI AKINOBU
IPC分类号： H01L39/24 , C30B19/02 , C30B29/22 , H01B12/00 , H01B13/00
摘要： PURPOSE:To obtain a thin film-shaped high-quality oxide superconductor by growing a single crystal from a melt consisting of Bi2O3 and CuO by epitaxial growth. CONSTITUTION:A melt consisting of Bi2O and CuO is prepd. A single crystal of an oxide superconductor is grown from the melt by liq. phase epitaxial growth. A large-sized high-quality single crystal is obtd. and especially a thin film-shaped high-quality oxide superconductor is obtd.

3. 发明专利

JPS54146280A Epitaxial-growth apparatus in liquid phase 失效
标题翻译：液相中的外延生长装置
公开(公告)号：JPS54146280A
公开(公告)日：1979-11-15
申请号：JP5431878
申请日：1978-05-08
申请人： Toshiba Corp
发明人： IWAMOTO MASAMI , TASHIRO MAKOTO , BETSUPU TATSUROU , KASAMI AKINOBU
IPC分类号： C30B19/06 , H01L21/208
摘要： PURPOSE: To provide a growth apparatus which mekes it possible to form a excellently grown layer of uniform impurity concn. at a high reproducibility, by moving a molten liq. container relatively to a supporting board, in which a recess for contg. a substrate is made, so as to separate excess of the molten liq. introduced on the substrate.
CONSTITUTION: In manufacturing GaP green-light-emitting device, molten liq. of single Ga is put into an opening 14, and an n type GaP substrate is placed in a recess 15 as a semiconductor substrate 16. In such a state, the whole apparatus is heated to 1000°C, at which growing starts, then a molten liq. container 12 is moved gradually to the left by means of an operating rod 18 in order to make thin molten liq. 13 remain on the substrate 16. That is, the container 12 is moved at first in such a way that the opening 14 comes just on the recess 15 of the supporting board 11 to make the molten liq. 13 contact with the upper surface of the substrate 16. Then the container 12 is made to slide to the left, so that the lower rear edge of the opening 14 cuts the molten liq. 13, and the molten liq. other than that remained in the recess 15 is moved. The container 12 is exposed to atmosphere, ketp at a constant temp. for prescribed time, then geadually cooled to 800°C on order to grow exitaxial layer on the substrate 16.
COPYRIGHT: (C)1979,JPO&Japio
摘要翻译：目的：提供一种生长装置，可以形成一个卓越的均匀杂质浓度层。以高重现性，通过移动熔融液体。容器相对于支撑板，其中一个凹槽制成基材，以分离出过量的熔融液体。引入到基板上。构成：在制造GaP绿色发光装置时，的单个Ga放入开口14中，并且将n型GaP衬底放置在作为半导体衬底16的凹部15中。在这种状态下，整个装置被加热到1000℃，在该生长开始时，然后熔化液容器12通过操作杆18逐渐向左移动，以形成薄的熔融液体。 13保持在基板16上。也就是说，容器12首先移动，使得开口14恰好在支撑板11的凹部15上，以形成熔融液体。 13接触基板16的上表面。然后容器12向左滑动，使得开口14的下后边缘切割熔融液体。 13，和熔融液体。除了保持在凹部15中的那一个被移动。将容器12暴露在大气中，在恒定温度下敲打。在规定时间内，然后通常冷却至800℃以便在基板16上生长出离子层。

4. 发明专利

JPS5936981A Green light emitting element of gallium phosphide 失效
标题翻译：绿色荧光粉的绿光发光元件
公开(公告)号：JPS5936981A
公开(公告)日：1984-02-29
申请号：JP13277983
申请日：1983-07-22
申请人： Toshiba Corp
发明人： IWAMOTO MASAMI , TASHIRO MAKOTO , BETSUPU TATSUROU , KASAMI AKINOBU
IPC分类号： H01L21/208 , H01L33/30
CPC分类号： H01L33/0062
摘要： PURPOSE:To enhance the luminous efficiency by containg nitrogen serving as the center of light emission into the N type GaP on the side of a P-N junction by a method wherein in the light emitting element is so composed that the donor concentration of GaP which composed the P-N junction on an N type GaP substrate is reduced in step form to the growing direction in reverse to the conventional one. CONSTITUTION:The N type GaP substrate 24 doped with sulfur is provided in the recess 24a of a slider 25, Ga is contained into the solution containing reservoir of a solution containg boat 28, and then a heating device is operated while H2 gas is made to flow in, resulting in the production of Ga solution 26 in the unsaturated state of GaP, which contains no donor impurity. Next, the GaP substrate 24 and the solution 26 are put in to contact and moved to the part having many small holes 27 while a part of the solution 26 is placed on the substrate 24. Then, the H2 gas containg NH3 is made to flow in by cooling and react with the Ga solution 26 on the GaP crystal via the small holes 27, and accordingly N of high concentration is added to the Ga solution. Then, the N type GaP layer doped with N atoms of high concentration is grown, and then the N type GaP layer is formed.
摘要翻译：目的：通过将PN作为发光中心的氮作为PN结侧面的N型GaP，通过以下方法提高发光效率：其中，在发光元件中，构成由GaP构成的供体浓度 N型GaP衬底上的PN结与传统方法相反地以阶梯形式减小到生长方向。构成：在滑块25的凹部24a中设置掺杂有硫的N型GaP基板24，Ga被包含在包含船28的溶液的储液槽中，然后在制作H2气的同时操作加热装置流入，导致GaP的不饱和状态的Ga溶液26的生成，其不含施主杂质。接下来，将GaP基板24和溶液26接触并移动到具有许多小孔27的部分，同时将一部分溶液26放置在基板24上。然后，使包含NH 3的H 2气体流动通过冷却并通过小孔27与GaP晶体上的Ga溶液26反应，因此将高浓度的N加入到Ga溶液中。然后，生长掺杂有高浓度N原子的N型GaP层，然后形成N型GaP层。

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