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1. 发明专利

JP2006048196A Network printing system, printer and print data preparation device 审中-公开
标题翻译：网络打印系统，打印机和打印数据准备设备
公开(公告)号：JP2006048196A
公开(公告)日：2006-02-16
申请号：JP2004225245
申请日：2004-08-02
申请人： Toshiba Corp , Toshiba Tec Corp , 東芝テック株式会社 , 株式会社東芝
发明人： WATANABE MASAYUKI , WATANABE HIROSHI
IPC分类号： G06F3/12 , B41J5/30 , H04N1/00
摘要： PROBLEM TO BE SOLVED: To provide a network printing system whose through-put is excellent as a whole, and a printer and a print data preparation device capable of configuring this system. SOLUTION: A load related with RIP processing is monitored by an RIP monitoring part 240 installed in a printer, and when an excess load is detected, it is informed that the RIP processing is performed at a print data preparing device side from an RIP load situation judging part 250 through a network communication means 210. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种整体上优秀的网络打印系统，以及能够配置该系统的打印机和打印数据准备装置。解决方案：与RIP处理相关的负载由安装在打印机中的RIP监视部分240监视，并且当检测到超负荷时，通知在打印数据准备设备侧从RIP处理执行RIP处理 RIP负载情况判断部分250通过网络通信装置210.版权所有：（C）2006，JPO＆NCIPI

2. 发明专利

JP2003002782A Method and device for pulling silicon single crystal 审中-公开
标题翻译：用于拉伸硅单晶的方法和装置
公开(公告)号：JP2003002782A
公开(公告)日：2003-01-08
申请号：JP2001181118
申请日：2001-06-15
申请人： Toshiba Ceramics Co Ltd , Toshiba Corp , 東芝セラミックス株式会社 , 株式会社東芝
发明人： WATANABE MASAYUKI , NAKAGAWA YASUTADA
IPC分类号： C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a method for puling a silicon single crystal which is based on a CZ method and by which a high quality silicon single crystal free from distortions or defects in the crystal can be easily and reliably pulled with a high speed even when the crystal has a large diameter, and to provide a pulling device suitably used for the same.
SOLUTION: When the silicon single crystal is pulled by the Czochralski method in which a cusp field is applied, the silicon single crystal is pulled under conditions that the temperature at the inner wall contacting with silicon melt of the bottom par of a crucible is adjusted to be higher than that at the inner side wall of the crucible and the temperature distribution at the bottom of the crucible is such that the temperature at the bottom of the crucible becomes lower from the center of the crucible toward the radial direction. Further, a bottom heater 7 and a side heater 4 are arranged so as to independently heat the bottom part and the side part of the crucible, respectively, to realize the temperature distribution mentioned above, and a radiation cover 6 for suppressing the radiant heat dissipation from the free surface of a silicon melt L1 and the upper end part of the crucible is arranged above the crucible.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种基于CZ方法制浆的单晶的方法，通过该方法可以容易且可靠地以高速甚至均匀地拉伸晶体中的失真或缺陷的高质量硅单晶当晶体具有大直径时，并且提供适合用于其的拉制装置。解决方案：当通过施加尖尖场的切克拉斯基法拉伸硅单晶时，在与坩埚底部的硅熔体接触的内壁处的温度被调节至高于坩埚的内侧壁，并且坩埚底部的温度分布使得坩埚底部的温度从坩埚的中心朝向径向方向下降。此外，底部加热器7和侧面加热器4分别设置成独立地加热坩埚的底部和侧部，以实现上述温度分布，以及用于抑制辐射散热的辐射盖6 从硅熔体L1的自由表面和坩埚的上端部分设置在坩埚的上方。

3. 发明专利

JPH03276640A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH03276640A
公开(公告)日：1991-12-06
申请号：JP7619990
申请日：1990-03-26
申请人： TOSHIBA CORP
发明人： TSUCHIYA NORIHIKO , WATANABE MASAYUKI
IPC分类号： H01L21/205 , H01L21/301 , H01L21/338 , H01L21/78 , H01L27/15 , H01L29/812 , H01L33/30 , H01L33/34 , H01L33/40
摘要： PURPOSE:To reduce that chippings and cracks are produced at a dicing operation by a method wherein a compound semiconductor layer is formed on a silicon single-crystal wafer by a heteroepitaxial growth operation, a recessed part formed by selectively etching its dicing region is filled with silicon, the dicing region is cut and pellets are separated. CONSTITUTION:SiO2 is deposited on a GaAs layer 2 which has been formed on an Si single-crystal substrate 1 by a heteroepitaxial growth operation; an SiO2 mask 10 used to form an opening in a dicing region is formed. Then, the GaAs layer 2 is etched by an RIE method by using a chlorine-bised gas; Si of the substrate 1 is exposed; recessed parts 11 to be used as dicing regions are formed. Then, a single-crystal layer is grown in the recessed parts 11 by a selective epitaxial growth operation of Si; the recessed parts 11 are filled completely; dicing regions 12 are formed. Lastly, the SiO2 mask 10 is removed; a MESFET or the like of an LDD structure is integrated in the GaAs layer 2; after that, the dicing regions 12 are cut in the direction of arrows; individual pellets surrounded by an Si sidewall layer 3 are separated.

4. 发明专利

JPH02180794A APPARATUS FOR PRODUCING III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH02180794A
公开(公告)日：1990-07-13
申请号：JP33546888
申请日：1988-12-29
申请人： TOSHIBA CORP
发明人： NAKAJIMA MASAHIRO , YASHIRO SATAO , WATANABE MASAYUKI
IPC分类号： C30B15/00 , C30B27/02 , C30B29/40 , H01L21/208
摘要： PURPOSE:To prevent the thermal strain in a single crystal by providing a circular cylindrical heat insulating cylinder to cover the single crystal so that the heat environment can be relieved in the upper part of a crucible at the time of pulling up the single crystal while rotating the crystal. CONSTITUTION:This apparatus for producing the single crystal is formed of the crucible 3, a III-V compd. semiconductor melt 8 which is packed in the crucible and is held covered with an inert liquid 9, a seed crystal 10 which is held immersed therein, a means which pulls up the seed crystal to form the single crystal 7, and the circular conical heat insulating cylinder 5. The above-mentioned crucible 3 is disposed in a high-pressure vessel 1 in which a pressurized inert gas is packed. The above-mentioned means forms the single crystal 7 while rotating the seed crystal 10. The cylinder 5 is installed to cover a rotating body 11.

5. 发明专利

JPS62119189A DEVICE FOR PRODUCING SINGLE CRYSTAL 失效
公开(公告)号：JPS62119189A
公开(公告)日：1987-05-30
申请号：JP25943585
申请日：1985-11-19
申请人： TOSHIBA CORP
发明人： NISHIO JOSHI , YASHIRO SATAO , TERAJIMA KAZUTAKA , WASHITSUKA SHOICHI , WATANABE MASAYUKI
IPC分类号： C30B15/14 , C30B15/20 , H01L21/18 , H01L21/208
摘要： PURPOSE:To obtain a single crystal having controlled diameter and without any slip even in moderate environment while controlling the heating and cooling with the output of a temp. detector provided at the lower part of a crystal lifting shaft in the titled device by the Czochralski method wherein the shaft is cooled. CONSTITUTION:Ga and As, for example, are charged in a crucible 2, then a B2O3 capsuling material 5 is charged. The crucible is placed in a high-pressure vessel 1, and the inside of the vessel is pressurized with Ar and heated to form a GaAs melt 4. Then the pressure in the vessel 1 is reduced to a pressure at which a crystal is lifted. The thermal environment in the melt 4 and the material 5 is moderately set by the first and the second resistance heater 61 and 62 among the heaters 61 and 62 and the third heater 7. The oil 13 in an oil bath (cooling mechanism) 12 is circulated by a pump 15, the flow rate is regulated by a valve 16, and seeding is carried out. At this time, the regulation is performed so that the temp. distribution measured by a thermocouple (temp. detector) 11, namely the differential thermal pattern in the axial direction of a lifting shaft 10, is specified. Then lifting is started, the valve 16 is regulated, the power supply to the heaters 61, 62, and 7 is controlled while monitoring the output of the thermocouple 11 to form the specified differential thermal pattern.

6. 发明专利

JPS61251594A APPARATUS FOR PRODUCING SINGLE CRYSTAL 失效
公开(公告)号：JPS61251594A
公开(公告)日：1986-11-08
申请号：JP8883485
申请日：1985-04-26
申请人： TOSHIBA CORP
发明人： WASHITSUKA SHOICHI , TERAJIMA KAZUTAKA , WATANABE MASAYUKI
IPC分类号： C30B15/22 , H01L21/18 , H01L21/208
摘要： PURPOSE:To provide the titled apparatus capable of giving a single crystal having uniform round cross-section, high purity and high quality, by arranging a cylindrical magnet having magnetic poles along axial direction in a manner to effect the impression of radial magnetic field in the surface of molten material. CONSTITUTION:An electrically conductive substance is heated and melted, and a single crystal is produced from the molten material by Czochralski method under the radial DC magnetic field applied to the molten material. The magnetic field impression apparatus for the above process is composed of a cylindrical magnet 8 having magnetic poles along radial direction and a disk magnet 9 having magnetic poles along axial direction and arranged above and below a crucible 1 in a manner to effect the impression of radial magnetic field 7 in the surface of molten material. The symmetricity of the temperature distribution in the molten material 2 in the surface of the crucible can be maintained uniformly by the impression of the magnetic field 7 to the molten material 2, and accordingly, the generation of nonuniformity and defect of the crystal caused by the thermal convection can be suppressed to give a single crystal 3 having uniform round crosssection and high purity and quality.

7. 发明专利

JPS61222911A SYNTHESIS OF PHOSPHORATED COMPOUND 失效
公开(公告)号：JPS61222911A
公开(公告)日：1986-10-03
申请号：JP6442785
申请日：1985-03-28
申请人： TOSHIBA CORP
发明人： TERAJIMA KAZUTAKA , WATANABE MASAYUKI , KASAMI AKINOBU
IPC分类号： C30B29/40 , C01B25/08 , C30B15/00
摘要： PURPOSE:To produce a high-purity phosphorated compound economically in high yield, by the liquid-phase reaction of a group III element with P in a pressurized inert gas atmosphere. CONSTITUTION:Phosphorus 21 is put into the quartz crucible 13 and covered with a group III element 22 (e.g. Ga) and an encapsulation material 23 having low water content. The crucible 13 is placed in the susceptor 14 and covered with the heat-shielding material 16. The inside of the chamber 11 is evacuated, and inert gas is introduced into the chamber 11 to a pressure of 300-700atm. The high-frequency coil 15 is energized to heat the crucible 13 at 700-1,300 deg.C to melt the phosphorus 21 and the group III element 23. A liquid-phase reaction takes place to form a crystal of the compound of phosphorus and the group III element.

8. 发明专利

JPS61186281A METHOD FOR PRODUCING SINGLE CRYSTAL, AND APPARATUS THEREFOR 失效
公开(公告)号：JPS61186281A
公开(公告)日：1986-08-19
申请号：JP2674285
申请日：1985-02-14
申请人： TOSHIBA CORP
发明人： TERAJIMA KAZUTAKA , NISHIO JOSHI , YASHIRO SATAO , WASHITSUKA SHOICHI , WATANABE MASAYUKI , KOJIMA MASAKATSU
IPC分类号： C30B15/22 , C30B15/30 , C30B27/02 , C30B29/40 , C30B29/42 , H01L21/18 , H01L21/208
摘要： PURPOSE:To suppress the thermal convection in the molten liquid of raw material, and to obtain a single crystal having high uniformity, by imposing a magnetic field having high magnetic field strength and broad optimum range of the field to a molten liquid, thereby decreasing the thermal oscillation. CONSTITUTION:The molten liquid 61 of raw material can be classified into the 1st region having high thermal oscillation, the 2nd region having decreased thermal oscillation, the 3rd region in which the thermal oscillation increases again, and the 4th region in which the thermal oscillation decreases again, in connection with the thermal oscillation characteristics caused by the increase of the magnetic field strength. A magnetic field sufficiently strong to give the 4th region is applied to the molten liquid 61 in the crucible 42. The seed crystal 63 is made to contact with the molten liquid 61, and pulled up vertically to obtain a single crystal.

9. 发明专利

JPS61132597A Apparatus for producing compound semiconductor single crystal 失效
标题翻译：用于生产化合物半导体单晶的装置
公开(公告)号：JPS61132597A
公开(公告)日：1986-06-20
申请号：JP25113084
申请日：1984-11-28
申请人： Toshiba Corp
发明人： YASHIRO SATAO , WASHITSUKA SHOICHI , WATANABE MASAYUKI , NAGATA MITSUHIRO , SUGIURA YASUYUKI
IPC分类号： C30B27/02 , H01L21/18 , H01L21/208
摘要： PURPOSE: To produce a semiconductor single crystal having high quality and low contamination with carbon and other impurities, in high reproducibility, by using specific multi-walled tube made of AlN as a heat-insulation cylinder of an apparatus for the production of a single crystal by LEC process, and growing a compound semiconductor single crystal with the apparatus.
CONSTITUTION: A heat-insulation cylinder 20 is placed in the pressure vessel 11 (e.g. made of stainless steel) of an apparatus for the production of a compound semiconductor single crystal by LEC process. The cylinder 20 is free of carbonaceous materials and is composed of two cylinders 20a and 20b made of sintered AlN and a granular filler 20c made of sintered alN and having a size of 3W10mm. The GaAs raw material 14 and the B
2 Oj
3 encapsulation material 15 are charged in the crucible 12 made of e.g. PBN, the space in the vessel 11 is pressurized with Ar gas, the crucible 12 is heated with the heater 17 to melt the raw material 14 and the encapsulation material 15, the seed crystal 22 is made to contact with the molten raw material 14 via the encapsulation material 15, and is pulled up to effect the growth of the single crystal 23. A semiconductor single crystal 23 having extremely decreased carbon contamination can be produced by this process.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过使用由AlN制成的特定多壁管作为制造单晶的设备的隔热圆筒，以高重现性制造具有高质量和低碳污染和低污染的半导体单晶通过LEC工艺，并用该装置生长化合物半导体单晶。构成：通过LEC工艺制造化合物半导体单晶的装置，将绝热筒体20放置在压力容器11（例如，不锈钢制造）中。气缸20不含碳质材料，由烧结AlN制成的两个气缸20a和20b和由烧结AlN制成的尺寸为3-10mm的颗粒填料20c组成。将GaAs原料14和B 2 O 3 3封装材料15装入由例如硅化物制成的坩埚12中。 PBN中，用Ar气加压容器11中的空间，用加热器17加热坩埚12以熔化原料14和封装材料15，使晶种22与熔融原料14接触，经由封装材料15，并被拉起以实现单晶23的生长。通过该方法可以制造具有极低碳含量的半导体单晶23。

10. 发明专利

JPS6163593A Installation for production of single crystal of compound semiconductor 失效
标题翻译：用于生产化合物半导体单晶的安装
公开(公告)号：JPS6163593A
公开(公告)日：1986-04-01
申请号：JP18572684
申请日：1984-09-05
申请人： Toshiba Corp
发明人： WASHITSUKA SHOICHI , NAKANISHI MASAE , WATANABE MASAYUKI , YASHIRO SATAO
IPC分类号： C30B15/14 , C30B27/02 , H01L21/02 , H01L21/208
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1064
摘要： PURPOSE:The heat shield which has a round opening through which the single crystal can pass is made with separated blocks of sintered structure of a specific composition whereby the quality of single crystals is improved and the produc tion yield is increased. CONSTITUTION:The unit for production of single crystal of compound semicon ductor is composed of a high-pressure vessel 11, crucible 12, crucible supports 13, 14 heater 15, the starting melt 16, a liquid capsule layer 17, pressurized inert gas 18, pulling-up shaft 19, crucible shaft 22, heat-shielding bed 23, heat- shielding cylinder and heat-sheilding cover 25. By the way, 20 stands for seed crystal and 21, the single crystal. The heat-sheilding bed 23, the cylinder 24 and the plate 25 is formed by sintering AlN and the cover plate 25 is divided into at least 2 pieces. The AlN sintering products are made by, e.g., mixing AlN fine powder with about 1% of Y2O3 as a binder, granulating and forming them, and sintering under normal pressure, after defatting with heat.
摘要翻译：目的：具有单晶可以通过的圆形开口的隔热板由具有特定组成的烧结结构的分离块制成，从而提高了单晶的质量，并提高了生产率。构成：复合半导体管的单晶的制造单元由高压容器11，坩埚12，坩埚13,14加热器15，起始熔体16，液体胶囊层17，加压惰性气体18，上拉轴19，坩埚轴22，隔热床23，隔热筒和热封罩25.顺便提及，20代表晶种，21代表单晶。散热床23，气缸24和板25通过烧结AlN形成，盖板25被分成至少2块。 AlN烧结产物通过例如混合约1％的Y 2 O 3作为粘合剂的AlN细粉末，将其造粒并成型，并在常压下烧结，然后加热脱脂。

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