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1. 发明专利

JPS5727126A Vapor growth device for compound semiconductor 失效
标题翻译：用于化合物半导体的蒸气生长装置
公开(公告)号：JPS5727126A
公开(公告)日：1982-02-13
申请号：JP10135980
申请日：1980-07-25
申请人： Toshiba Corp
发明人： KONNO KUNIAKI , IWAMOTO MASAMI , BETSUPU TATSUROU
IPC分类号： C30B25/12 , B01J12/00 , C23C16/44 , C30B25/00 , H01L21/20 , H01L21/205
摘要： PURPOSE: To provide a vapor growth device for compound semiconductors which provide composition changes between different composition layers by providing an opening part to a partition plate dividing a vapor growth reaction chamber to two or more parts, rotating a substrate support means supporting rotary type semiconductor substrates connected to the revolving shaft in the opening part, and causing vapor growth alternately in the respective reaction chambers.
CONSTITUTION: A vapor growth reaction chamber is divided to reaction chambers 3, 4 by a partition plate 5, and for example, an InP substrate 6 is fixed to a support means 8 by way of an operating rod 7. First, InCl
3 , and PH
3 are carried from the upper stream side of the chamber 3 to a crystal deposition area A, where vapor growth of InP is accomplished on the substrate 6. Next, InCl
3 , GaCl
3 , PH
3 and AsH
3 are carried by hydrogen to the crystal deposition area A of the chamber 4; at the same time, the rod 7 is operated on the outside of a reaction tube 2 to move the substrate 6 grown with the InP layer into the chamber 4, where vapor growth of InGaAsP is accomplished.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：提供一种化合物半导体的气相生长装置，其通过为将气相生长反应室分隔成两个或更多个部分的隔板提供开口部分来提供不同组成层之间的组成变化，旋转支撑旋转型半导体衬底的衬底支撑装置连接到开口部中的旋转轴，并且在各个反应室中交替地引起蒸气生长。构成：蒸气生长反应室通过分隔板5分成反应室3,4，例如，通过操作杆7将InP基板6固定到支撑装置8.首先，将InCl 3和PH 3 从室3的上游侧被携带到晶体沉积区域A，其中在基板6上实现InP的蒸气生长。接下来，将InCl 3，GaCl 3，PH 3和AsH 3通过氢气输送到晶体沉积区域A 室4; 同时，杆7在反应管2的外侧操作，以将由InP层生长的基板6移动到完成InGaAsP的蒸气生长的室4中。

2. 发明专利

JPS5727018A Vapor growth device of compound semiconductor 失效
标题翻译：化合物半导体的蒸气生长装置
公开(公告)号：JPS5727018A
公开(公告)日：1982-02-13
申请号：JP10135780
申请日：1980-07-25
申请人： Toshiba Corp
发明人： KONNO KUNIAKI , IWAMOTO MASAMI , BETSUPU TATSUROU
IPC分类号： C23C16/458 , H01L21/205 , H01S5/00
CPC分类号： C23C16/4588 , H01L21/02392 , H01L21/02543 , H01L21/02546 , H01L21/0262
摘要： PURPOSE:To make a vapor growth layer of compound semiconductor having a radical change of composition to grow on substrate by a method wherein a slit is provided in a dashboard to divide the vapor growth reaction part of a reaction tube into two, and the semiconductor substrate is made to perform a round transferring motion through the slit extending over the two vapor growth reaction parts. CONSTITUTION:The slit 10 is provided in the dashboard 9 dividing the quartz reaction tube 2 into two of upward and downward, and a screen 11 extending over the respective vapor growth reaction parts of upward and downward is provided on the lower stream side of the slit 10. When a transfer direction converter 14 is made to perform horizontal round transferring motion parallel to the center axial direction of the reaction tube 2 by operation of an operating bar 13 made of quartz, a supporting tool 12 made of quartz being adhered the InP substrate 15 thereon transfers on the oblique side face of the converter 14 to change the position, and performs round transferring motion in the vertical derection. Accordingly by making the InP substrate to transfer in an extremely short time between two reaction parts where material gases for vapor growth having different compositions are flowing, the vapor growth layer having radical change of composition can be made to grow.
摘要翻译：目的：通过在仪表板中设置狭缝以将反应管的气相生长反应部分分成两部分的方法，使具有组成自由基变化的化合物半导体的蒸气生长层生长在基板上，半导体基板被制造成通过在两个气相生长反应部分上延伸的狭缝进行圆形转移运动。构成：狭缝10设置在仪表板9中，将石英反应管2分成上下两个，并且在狭缝的下游侧设置有在上下各自的蒸汽生长反应部分上延伸的筛网11 当通过操作由石英制成的操作杆13使传送方向转换器14执行与反应管2的中心轴方向平行的水平圆形传送运动时，由石英制成的支撑工具12粘附InP衬底 15在转换器14的倾斜侧面上传送，以改变位置，并且在垂直设置中执行圆形传递运动。因此，通过使InP基板在两个反应部分之间的极短时间内转移，其中用于气相生长的材料气体具有不同组成的材料气体流动，可以使具有自由基组成变化的气相生长层生长。

3. 发明专利

JPS5727017A Vapor-phase growing device for compound semiconductor 失效
标题翻译：用于化合物半导体的蒸气相生长装置
公开(公告)号：JPS5727017A
公开(公告)日：1982-02-13
申请号：JP10135680
申请日：1980-07-25
申请人： Toshiba Corp
发明人： IWAMOTO MASAMI , KONNO KUNIAKI , BETSUPU TATSUROU
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01S5/00
CPC分类号： H01L21/02543 , C23C16/45589 , H01L21/02546 , H01L21/0262
摘要： PURPOSE:To easily grow a multilayer vapor-phase having a steep compositional distribution as well as to perform said growing with an excellent reproducibility by a method wherein each gas inducing passage, corresponding to the plurality of raw gas outlets provided on one side of a reaction tube, is shifted using a control stick, thereby enabling to induce one raw gas only. CONSTITUTION:Raw gas outlets 2-9 and 2-10 are closed in such manner that the covers 2-15 and 2-16 attached to one end of gas inducing passages 2-11 and 2-12, which are movable to the axial direction of a quartz reaction tube 2-2, are shifted to leftward by operating quartz controlling sticks 2-17 and 2-18. Then, the crystalline substrate 2-6 fixed to a quartz support 2-8 is arranged on a crystal deposited region A by operating the quartz controlling stick 2-7, the controlling stick 2-17 is shifted to rightward and crystal growth is performed by inducing raw gas from a gas outlet 2-9. Then, the outlet 2-9 is closed and other raw gas is induced in the region A by opening the gas outlet 2-10 using the control stick 2-18. By repeating the abovementioned operation successively, the multilayer growth having a steep compositional distribution can be performed easily with an excellent reproducibility.
摘要翻译：目的：为了容易地生长具有陡峭组成分布的多层气相，并且通过一种方法进行所述生长，其中每个气体诱导通道对应于设置在反应一侧的多个原料气体出口管，使用控制棒移动，从而仅能诱导一个原料气体。构成：将原料气出口2-9和2-10以这样的方式关闭，使得盖2-15和2-16附接到气体诱导通道2-11和2-12的一端，其可沿轴向移动的石英反应管2-2通过操作石英控制棒2-17和2-18向左移动。然后，通过操作石英控制棒2-7将固定在石英支架2-8上的结晶基板2-6配置在晶体沉积区域A上，控制棒2-17向右移动，晶体生长由从气体出口2-9诱导原料气体。然后，通过使用控制棒2-18打开气体出口2-10，将出口2-9封闭，并在区域A中诱导其它原料气体。通过依次重复上述操作，可以容易地以极好的再现性进行陡峭的组成分布的多层生长。

4. 发明专利

JPH1053488A LIQUID PHASE EPITAXIAL GROWTH FOR SEMICONDUCTOR, APPARATUS AND WAFER HOLDER THEREFOR 失效
公开(公告)号：JPH1053488A
公开(公告)日：1998-02-24
申请号：JP12258997
申请日：1997-05-13
申请人： TOSHIBA CORP
发明人： FURUKAWA KAZUYOSHI , IWAMOTO MASAMI
IPC分类号： C30B19/00 , C30B19/06 , C30B29/40 , H01L21/208 , H01L21/673 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To obtain an epitaxial growth layer uniform in thickness and composition by holding wafers while facing each other and carrying out a means for covering the surrounding of the wafers so as to prevent precipitation of polycrystal. SOLUTION: Plural wafers 15 are longitudinally or slantingly held alternately inside and outside, gaps between the wafers 15 of the back are separated by a wafer holder 14 and the wafers 15 of the surface are held while facing each other with a space between them. The wafers 15 are put in a U-shaped pocket of a wafer holder main holder 11 and fixed by a cover 12 inserted into the pocket. The circumference of the waters 15 is covered with the pocket and the cover 12. The bottom of the wafer holder is provided with an inlet and outlet port 13 for injecting and discharging an epitaxial growth source between the surfaces of the wafers 15. An upper slit 16 corresponds to a gas vent hole when the source is injected and discharged.

5. 发明专利

JPS5936981A Green light emitting element of gallium phosphide 失效
标题翻译：绿色荧光粉的绿光发光元件
公开(公告)号：JPS5936981A
公开(公告)日：1984-02-29
申请号：JP13277983
申请日：1983-07-22
申请人： Toshiba Corp
发明人： IWAMOTO MASAMI , TASHIRO MAKOTO , BETSUPU TATSUROU , KASAMI AKINOBU
IPC分类号： H01L21/208 , H01L33/30
CPC分类号： H01L33/0062
摘要： PURPOSE:To enhance the luminous efficiency by containg nitrogen serving as the center of light emission into the N type GaP on the side of a P-N junction by a method wherein in the light emitting element is so composed that the donor concentration of GaP which composed the P-N junction on an N type GaP substrate is reduced in step form to the growing direction in reverse to the conventional one. CONSTITUTION:The N type GaP substrate 24 doped with sulfur is provided in the recess 24a of a slider 25, Ga is contained into the solution containing reservoir of a solution containg boat 28, and then a heating device is operated while H2 gas is made to flow in, resulting in the production of Ga solution 26 in the unsaturated state of GaP, which contains no donor impurity. Next, the GaP substrate 24 and the solution 26 are put in to contact and moved to the part having many small holes 27 while a part of the solution 26 is placed on the substrate 24. Then, the H2 gas containg NH3 is made to flow in by cooling and react with the Ga solution 26 on the GaP crystal via the small holes 27, and accordingly N of high concentration is added to the Ga solution. Then, the N type GaP layer doped with N atoms of high concentration is grown, and then the N type GaP layer is formed.
摘要翻译：目的：通过将PN作为发光中心的氮作为PN结侧面的N型GaP，通过以下方法提高发光效率：其中，在发光元件中，构成由GaP构成的供体浓度 N型GaP衬底上的PN结与传统方法相反地以阶梯形式减小到生长方向。构成：在滑块25的凹部24a中设置掺杂有硫的N型GaP基板24，Ga被包含在包含船28的溶液的储液槽中，然后在制作H2气的同时操作加热装置流入，导致GaP的不饱和状态的Ga溶液26的生成，其不含施主杂质。接下来，将GaP基板24和溶液26接触并移动到具有许多小孔27的部分，同时将一部分溶液26放置在基板24上。然后，使包含NH 3的H 2气体流动通过冷却并通过小孔27与GaP晶体上的Ga溶液26反应，因此将高浓度的N加入到Ga溶液中。然后，生长掺杂有高浓度N原子的N型GaP层，然后形成N型GaP层。

6. 发明专利

JPS61242994A VERTICAL UNIT FOR VAPOR GROWTH 失效
公开(公告)号：JPS61242994A
公开(公告)日：1986-10-29
申请号：JP8442285
申请日：1985-04-22
申请人： TOSHIBA CORP
发明人： MUTO YUHEI , YAMAMOTO MOTOYUKI , OBA YASUO , IWAMOTO MASAMI
IPC分类号： C30B25/12 , H01L21/205
摘要： PURPOSE:In the vapor growth oven, the insulation disks which are detachably placed on the sample support to hold the sample is made rough on its surface contacting with the sample base whereby a crystal growth layer is formed in a uniform film thickness with a stabilized chemical composition. CONSTITUTION:An insulation disk 3 is detachably placed on the sample support 5 in the vapor growth oven 1 and holds the sample 2. The insulation disk is made coarase on its surface contacting with the sample 2. The distance from peak to in the surface roughness is made less than 100mu.

7. 发明专利

JPS5727022A Vapor growth device of compound semiconductor 失效
标题翻译：化合物半导体的蒸气生长装置
公开(公告)号：JPS5727022A
公开(公告)日：1982-02-13
申请号：JP10226880
申请日：1980-07-25
申请人： Toshiba Corp
发明人： BETSUPU TATSUROU , KONNO KUNIAKI , IWAMOTO MASAMI
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L33/30 , H01S5/00
CPC分类号： C23C16/45589 , H01L21/02543 , H01L21/02546 , H01L21/0262
摘要： PURPOSE:To perform easily crystal growth of a compound semiconductor having radical distribution of composition by a method wherein respective penetrating holes provided in the partitions of plural gas supplying pathes and single hole provided in the partition of an inside tube are made to face with each other alternately, and the desired gas is introduced in order in a vapor growth chamber. CONSTITUTION:The partition 19 provided with the penetrating holes 21A, 21B is formed diagonally being integrated in one body to the partition 17 dividing a reaction tube 11 into two gas supplying pathes 18A, 18B. While the inside tube 13 having the vapor growth chamber 14 and the partition 20 to be piled on the partition 19 are formed being integrated in one body. The single penetrating hole 22 provided in the partition 20 and the penetrating hole 21A or 21B are made to face with each other alternately by rotating the inside tube 13 at 180 deg. around shaft. The material gases A, B are introduced in the vapor growth chamber 14 being changed over between them by this way, and moreover a substrate 16 is put in a pocket 23 temporarily when change-over is to be performed. Accordingly confusion of gas current and fluctuation of temperature condition at the position of the substrate 16 are eliminated, the crystal layer having superior characteristic can be made to grow in succession having favorable reprodicibility, and crystal growth having radical distribution of composition can be performed easily.
摘要翻译：目的：通过设置在设置在内管的隔壁中的多个气体供给孔和单孔的隔壁中的各个贯通孔彼此面对的方法，容易地实现具有组成自由基分布的化合物半导体的晶体生长交替地，并且期望的气体依次在蒸气生长室中引入。构成：具有贯通孔21A，21B的隔壁19形成为对角地一体地形成在将反应管11分割成两个供气孔18A，18B的隔壁17上。当具有蒸气生长室14和分隔件20的内管13形成在一体内时，设置在分隔件20中的单个贯通孔22和贯通孔21A或21B通过使内管13在180度旋转而交替地相互面对。围绕轴。材料气体A，B通过这种方式被引入蒸气生长室14中，并且在进行切换时，将基板16临时放入袋23内。因此，消除了气体电流和基板16位置的温度变动波动，可以使具有优异特性的结晶层连续地生长，具有良好的再现性，并且可以容易地进行具有组成自由基分布的晶体生长。

8. 发明专利

JPS5727019A Vapor growth device of compound semiconductor 失效
标题翻译：化合物半导体的蒸气生长装置
公开(公告)号：JPS5727019A
公开(公告)日：1982-02-13
申请号：JP10135880
申请日：1980-07-25
申请人： Toshiba Corp
发明人： KONNO KUNIAKI , IWAMOTO MASAMI , BETSUPU TATSUROU
IPC分类号： C23C16/458 , H01L21/205 , H01S5/00
CPC分类号： C23C16/4588 , H01L21/02543 , H01L21/02546 , H01L21/0262
摘要： PURPOSE:To perform easily crystal growth of a compound semiconductor having radical change of composition by a method wherein a disk type supporting tool is arranged in a slit provided in a dashboard dividing a vapor growth reaction chamber into two, and the supporting tool is made to rotate transfer a substrate fixed on the supporting tool between the respective reaction chambers. CONSTITUTION:The vapor growth reaction chamber in a reaction tube is divided into two by the dashboard 9, and the disk type supporting tool 11 is arranged in the slit 10 provided in the dashboard 9. The supporting tool 11 is made to rotate by an operation bar 14 connected to the supporting tool 11 through a guide sleeve 13. Therefore the semiconductor substrate 12 fixed to the supporting tool 11 transfers in an extremely short time between the respective vapor growth reaction chambers flowing respectively material gas having different composition with each other. Accordingly crystal growth having radical change of composition can be performed easily.
摘要翻译：目的：通过将圆盘型支撑工具布置在设置在将气相生长反应室分隔成两个的仪表板的狭缝中的方法中，可以容易地实现具有组成自由基变化的化合物半导体的晶体生长，并且将支撑工具制成旋转将固定在支撑工具上的基板转移到相应的反应室之间。构成：通过仪表板9将反应管中的蒸汽生长反应室分成两部分，并且盘型支撑工具11设置在设置在仪表板9中的狭缝10中。支撑工具11通过操作杆14通过引导套筒13连接到支撑工具11.因此，固定到支撑工具11的半导体基板12在分别流动具有彼此不同组成的材料气体的各个气相生长反应室之间的极短的时间内转移。因此，可以容易地进行具有组成自由基变化的晶体生长。

9. 发明专利

JPS5727016A Vapor-phase growing device for compound semiconductor 失效
标题翻译：用于化合物半导体的蒸气相生长装置
公开(公告)号：JPS5727016A
公开(公告)日：1982-02-13
申请号：JP10135580
申请日：1980-07-25
申请人： Toshiba Corp
发明人： IWAMOTO MASAMI , KONNO KUNIAKI , BETSUPU TATSUROU
IPC分类号： C23C16/458 , H01L21/205 , H01S5/00
CPC分类号： H01L21/02543 , C23C16/4588 , H01L21/02546 , H01L21/0262
摘要： PURPOSE:To accomplish the multilayer vapor-phase growth having a steep compositional change by a method wherein the control stick, which was bent on the side where substrate support is coupled, is rotated along the center axis of a reaction tube and a crystalline substrate is shifted between two vapor-phase growing chambers for a short time. CONSTITUTION:The upper and lower vapor-phase growing chambers are provided by dividing a quartz reaction tube 2-2 using a partition plate 2-5. On the other hand, one side of a quartz control stick 2-7, extending along the center axis of the reaction tube 2-2, is bent and at the point of which, a quartz support 2-8 which is fixing the crystalline substrate 206 is coupled. Then, the substrate 2-6 is arranged on the crystal deposited region A of each vapor-phase growing chamber, wherein reaction gas having a different composition is flowing, the control stick 2-7 is rotated for the center axis at the same time, and each vapor-phase growing chamber is shifted. Through these procedures, the crystalline substrate can be shifted between each vapor-phase growing chamber in a very short time, thereby enabling to accomplish the growing of multilayer vapor-phase having a steep compositional change.
摘要翻译：目的：通过以下方法实现具有陡峭组成变化的多层气相生长，其中在基板支撑件耦合的一侧弯曲的控制棒沿着反应管的中心轴旋转，并且结晶基板为在两个气相生长室之间转移了很短的时间。构成：通过使用隔板2-5分割石英反应管2-2来提供上部和下部气相生长室。另一方面，沿着反应管2-2的中心轴延伸的石英控制棒2-7的一侧被弯曲，并且在该位置上固定晶体衬底的石英支撑件2-8 206耦合。然后，将基板2-6配置在各气相生长室的结晶析出区域A上，其中具有不同成分的反应气体流动，控制棒2-7同时转动中心轴线，并且每个气相生长室被移动。通过这些方法，可以在非常短的时间内在每个气相生长室之间移动晶体衬底，从而能够实现具有陡峭组成变化的多层气相的生长。

10. 发明专利

JPS5727023A Vapor growth device of compound semiconductor 失效
标题翻译：化合物半导体的蒸气生长装置
公开(公告)号：JPS5727023A
公开(公告)日：1982-02-13
申请号：JP10227080
申请日：1980-07-25
申请人： Toshiba Corp
发明人： BETSUPU TATSUROU , KONNO KUNIAKI , IWAMOTO MASAMI
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L33/30 , H01S5/00
CPC分类号： H01L21/02543 , C23C16/45589 , H01L21/02546 , H01L21/0262
摘要： PURPOSE:To perform easily crystal growth having radical distribution of composition of a compound semiconductor by a method wherein respective penetrating holes provided in the partitions of plural material gas supplying pathes and single penetrating hole provided in the partition of an inside tube are made to face with each other alternately, and the desird material gas is introduced in order in a vapor growth chamber. CONSTITUTION:The partition 19 provided with the penetrating holes 21A, 21B is formed being integrated in one body with a dashboard 17 dividing a reaction tube 11 into two gas supplying pathes 18A, 18B in the condition as to cross at a right angle with the dashboard 17. While the inside tube 13 having the vapor growth chamber 14 and the partition 20 to be piled on the partition 19 are formed being integrated in one body. The single penetrating hole 22 provided in the partition 20 and the penetrating hole 21A or 21B are made to face with each other alternately by rotating the inside tube 13 at 180 deg. around shaft. The material gases A, B are introduced in the vapor growth chamber 14 by this way being changed over between them, and crystal growth is performed on a crystal substrate 16. Accordingly confusion of gas current and fluctuation of temperature condition at the position of the substrate 16 is eliminated, the crystal layer having superior characteristic can be made to grow in succession having favorable reproducibility, and crystal growth having redical distribution of composition can be performed easily.
摘要翻译：目的：通过这样一种方法来实现具有化合物半导体组成的自由基分布的晶体生长，其中设置在设置在内管的隔板中的多个材料气体供给孔和单个穿孔的隔壁中的各个穿孔被制成与彼此交替地，并且在气相生长室中顺序地引入物质气体。构成：设置有贯通孔21A，21B的分隔件19形成为一体地集成在一个仪表板17中，仪表板17将反应管11分成两个气体供给孔18A，18B，在与仪表板成直角交叉的状态下虽然具有将蒸气生长室14和分隔件20堆积在分隔件19上的内管13形成为一体地集成。设置在分隔件20中的单个贯通孔22和贯通孔21A或21B通过使内管13在180度旋转而交替地相互面对。围绕轴。原料气体A，B通过这些方式被引入气相生长室14中，并且在晶体基板16上进行晶体生长。因此，气体电流的混乱和基板位置的温度变化的波动如图16所示，可以使具有优异特性的结晶层连续生长而具有良好的再现性，并且可以容易地进行具有重分布的组成的晶体生长。

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