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1. 发明专利

JP2006003120A Total reflection fluorescent x-ray analyzing method 有权
标题翻译：总反射荧光X射线分析方法
公开(公告)号：JP2006003120A
公开(公告)日：2006-01-05
申请号：JP2004177270
申请日：2004-06-15
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO AKIKO
IPC分类号： G01N23/223 , G01N1/28 , G01N23/20 , G01T1/36
CPC分类号： G01N23/223 , G01N2223/076
摘要： PROBLEM TO BE SOLVED: To obtain high sensitivity regardless of the kind of a sample and the surface state of the sample. SOLUTION: The total reflection fluorescent X-ray analyzing method includes a process for exposing a semiconductor substrate 2 to acid vapor, a process for scanning and recovering impurities on the surface of the semiconductor substrate exposed to the acid vapor by an acid solution, a process for concentrating and drying the scanned and recovered acid solution 6 on a substrate of which the surface is a mirror surface state to convert the same to concentrated dry matter 8, a process for changing the concentrated dry matter to a granular concentrate 8a using an acid and a process for analyzing the granular concentrate by a total reflection fluorescent X-ray analyzer 40. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：无论样品的种类和样品的表面状态如何，都能获得高灵敏度。解决方案：全反射荧光X射线分析方法包括将半导体衬底2暴露于酸性蒸气的方法，通过酸溶液在暴露于酸性蒸气的半导体衬底的表面上扫描和回收杂质的工艺将扫描回收的酸性溶液6浓缩并干燥在其表面为镜面状态的基材上以将其转化为浓缩干燥物质8的方法，将浓缩干物质变成粒状浓缩物8a的方法，使用酸和通过全反射荧光X射线分析仪40分析颗粒状浓缩物的方法。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2006108364A Droplet holder and impurity collection method 审中-公开
标题翻译： DROPLET HOLDER和IMPRITY收集方法
公开(公告)号：JP2006108364A
公开(公告)日：2006-04-20
申请号：JP2004292577
申请日：2004-10-05
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO AKIKO
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a droplet holder and an impurity recovery method having high droplet-holding ability on the surface of a substrate and capable of extending the range of a sample from which an impurity can be collected.
SOLUTION: This droplet holder has a tubular shape, and has an opening at least at one end thereof with an opening area of ≤40 mm
2 , and this end has a tapered end surface 302, and the droplet holder is composed of a fluorine-contained resin having acid resistance and water repellency.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在基板表面上具有高液滴保持能力的液滴保持器和杂质回收方法，并且能够扩大可从其中收集杂质的样品的范围。
解决方案：该液滴保持器具有管状形状，并且至少在其一端具有开口面积为≤40mm 2 的开口，并且该端部具有锥形端面302，并且液滴保持器由具有耐酸性和防水性的含氟树脂构成。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2003110013A ACCOMMODATION APPARATUS AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003110013A
公开(公告)日：2003-04-11
申请号：JP2001301361
申请日：2001-09-28
申请人： TOSHIBA CORP
发明人： ITO AKIKO , KATANO MAKIKO , MIZUNO AYAKO , OGUCHI HISASHI , OGAWA YOSHIHIRO , TOMITA HIROSHI
IPC分类号： H01L21/673 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To realize a semiconductor substrate accommodation apparatus which can effectively control growth of an oxide film on a metal film. SOLUTION: A drying agent 18 is provided within a cabinet 2 in order to maintain the relative humidity in the cabinet 2 to under 5%.

4. 发明专利

JP2002286600A COLLECTOR FOR EVALUATING CLEANNESS OF ATMOSPHERIC AIR 失效
公开(公告)号：JP2002286600A
公开(公告)日：2002-10-03
申请号：JP2001090462
申请日：2001-03-27
申请人： TOSHIBA CORP
发明人： SATO TOMOKA , SAKAI KIMITO , KOZUKA SHOJI , KOMATSU SHUICHI , ITO AKIKO
IPC分类号： G01N1/22 , B01J20/10
摘要： PROBLEM TO BE SOLVED: To selectively and efficiently collect a compound easy to be adsorbed and deposited onto a semiconductor substrate out of contaminants of a very small amount in an atmospheric air in a clean room or the like, and to highly efficiently desorb the contaminant to evaluate precisely the collected contaminant easily in a short time. SOLUTION: The contaminant in the objective atmospheric air is adsorbed in order to evaluate cleanness of the atmospheric air, and the absorbed contaminant is desorbed to be analyzed, in this collector. The collector has 100 μm-40 mm of particle size and 0.02-5 m /g of specific surface area, and contains particles of which the main component is silicon. The particle containing silicon as the main component comprises preferably SiO2 , and may have a silicon film coated on its surface.

5. 发明专利

JP2002368050A Method and equipment for measuring organic matter on surface of semiconductor substrate 审中-公开
标题翻译：用于测量半导体衬底表面有机物的方法和设备
公开(公告)号：JP2002368050A
公开(公告)日：2002-12-20
申请号：JP2001171876
申请日：2001-06-07
申请人： Toshiba Corp , Toshiba Microelectronics Corp , 東芝マイクロエレクトロニクス株式会社 , 株式会社東芝
发明人： ITO AKIKO , KATANO MAKIKO , MIYASHITA MORIYA , TOYOMARU YOKO
IPC分类号： G01N27/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To measure the quantity of organic matters adhering onto the surface of a semiconductor substrate locally.
SOLUTION: In the method for measuring the quantity of organic matters on the surface of a semiconductor substrate, surface static charges Qss generated by irradiating the surface of the semiconductor substrate with light are measured and after removing the organic matters on the surface of the semiconductor substrate 14, surface static charges Qss' on the surface of the semiconductor substrate 14 are measured similarly to the previous time. The quantity of organic matters adhering to the surface of the semiconductor substrate 14 can be determined from the difference between the Qss and Qss'. Since the Qss can be measured at a pitch of 15 mm, for example, the quantity of organic matters adhering to the surface of the semiconductor substrate can be measured locally.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：局部测量附着在半导体基板的表面上的有机物质的量。解决方案：在用于测量半导体衬底表面上的有机物质量的方法中，测量通过用光照射半导体衬底的表面产生的表面静电电荷Qss，并且在去除半导体衬底的表面上的有机物质之后如图14所示，与上一次类似地测量半导体衬底14的表面上的表面静电电荷Qss'。附着于半导体基板14的表面的有机物的量可以根据Qss和Qss'之间的差来确定。由于可以以15mm的间距测定Qss，所以例如可以局部地测定附着在半导体基板的表面的有机物的量。

6. 发明专利

JP2001066270A METHOD FOR ANALYZING IMPURITY CONCENTRATION OF SUBSTRATE 失效
公开(公告)号：JP2001066270A
公开(公告)日：2001-03-16
申请号：JP24022599
申请日：1999-08-26
申请人： TOSHIBA CORP
发明人： ITO AKIKO , TSUCHIYA NORIHIKO
IPC分类号： G01N23/223 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To accurately obtain the concentration of a contaminant. SOLUTION: The method for analyzing impurity concentration of a substrate includes a step F1 for measuring fluorescent X-ray intensity [I]s of an element that becomes the reference of a known amount on a first substrate using a total reflection fluorescent X-ray analysis device, a step F3 for measuring fluorescent X-ray intensity [I]x of an impurity element on a second substrate using the total reflection fluorescent X-ray analysis device, and a step F4 for standardizing the fluorescent X-ray intensity of the impurity element using the fluorescent X-ray intensity of the element that becomes the reference and for obtaining the concentration of the impurity element, based on the standardized value.

7. 发明专利

JP2000077381A Etching method, etching device, and analysis method 审中-公开
标题翻译：蚀刻方法，蚀刻装置和分析方法
公开(公告)号：JP2000077381A
公开(公告)日：2000-03-14
申请号：JP24862698
申请日：1998-09-02
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO AKIKO , KAGEYAMA MOKUJI
IPC分类号： H01L21/306 , G01N1/28 , G01N21/31 , G01N23/223 , G01N27/62 , H01L21/00 , H01L21/66
CPC分类号： H01L21/67086
摘要： PROBLEM TO BE SOLVED: To provide such an etching method and an etching device that etching of a board by acid become uniform, and materialize an analysis method using these etching methods. SOLUTION: The temperature irregularity is controlled by heating and cooling a substrate 102 partially. At the same time, the convection of etchant can be suppressed. Furthermore, equal and quick etching becomes possible by etching it at a low temperature in the initial stage of etching and at a higher temperature at the end. Moreover, in a drop etching method, etching can be equalized by providing a member opposed to the substrate 102 with a gas discharge port thereby preventing the occurrence of bubbles.
摘要翻译：要解决的问题：为了提供这样的蚀刻方法和蚀刻装置，其通过酸蚀刻板变得均匀，并且使用这些蚀刻方法实现分析方法。解决方案：通过部分地加热和冷却衬底102来控制温度不均匀。同时，可以抑制蚀刻剂的对流。此外，通过在蚀刻的初始阶段和最后的较高温度下在低温下进行蚀刻，可以进行相等和快速的蚀刻。此外，在液滴蚀刻方法中，通过设置与基板102相对的与气体排出口相对的构件，能够进行蚀刻，从而防止气泡的发生。

8. 发明专利

JP2015049173A 標準試料およびその作製方法审中-公开
标题翻译：标准样品和标准样品生产方法
公开(公告)号：JP2015049173A
公开(公告)日：2015-03-16
申请号：JP2013181965
申请日：2013-09-03
申请人：株式会社東芝 , Toshiba Corp
发明人： ITO AKIKO
IPC分类号： G01N1/00 , G01N1/28 , G01N1/32
CPC分类号： G01N33/00 , G01N1/4055 , G01N1/4077 , G01N2001/4027
摘要：【課題】分析対象物質が粒子である分析試料の正確な分析を可能とする標準試料およびその作製方法を提供する。【解決手段】一の実施形態によれば、標準試料の作製方法は、基板上に、第1の層を介して、分析対象元素を含有する第2の層を形成することを含む。さらに、前記方法は、前記第1および第2の層を溶解させることにより、前記基板上に、前記分析対象元素を含有する複数の液滴を形成することを含む。さらに、前記方法は、前記液滴を乾燥させることにより、前記基板上に、前記分析対象元素を含有する複数の粒子を形成することを含む。【選択図】図2
摘要翻译：要解决的问题：提供能够精确地分析含有作为颗粒的分析对象物的分析样品的标准样品和标准样品制备方法。解决方案：根据一个实施方案，标准样品制备方法包括形成含有经由第一层的衬底上的分析目标元件。该方法还包括溶解第一和第二层，从而在基底上形成含有分析目标元素的多个液滴。该方法还包括干燥液滴，从而在基底上形成含有分析目标元素的多个颗粒。

9. 发明专利

JP2008024429A Manufacturing method for electronic device 审中-公开
标题翻译：电子设备制造方法
公开(公告)号：JP2008024429A
公开(公告)日：2008-02-07
申请号：JP2006198481
申请日：2006-07-20
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO AKIKO , KAWASAKI ATSUKO , KIYOTOSHI MASAHIRO , KATANO MAKIKO
IPC分类号： B65G49/07 , H01L21/027 , H01L21/677
CPC分类号： H01L21/67393 , H01L21/67253 , H01L21/76224 , H01L27/115 , H01L27/11521 , Y10S414/135
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device for preventing pollution by a basic compound containing nitrogen atoms. SOLUTION: In a specific conveyance path between processes for storing an intermediate product in a sealed conveyance vessel 60 and conveying it to a second manufacturing process in which the performance of manufacturing is deteriorated due to the pollution by the basic compound after a first manufacturing process for discharging the basic compound containing nitrogen atoms from the intermediate product, relative humidity in the sealed conveyance vessel 60 is controlled to become lower than environmental relative humidity outside the sealed conveyance vessel. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2006294893A Heat treatment apparatus and head treatment method 审中-公开
标题翻译：热处理装置和头部处理方法
公开(公告)号：JP2006294893A
公开(公告)日：2006-10-26
申请号：JP2005114267
申请日：2005-04-12
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO AKIKO
IPC分类号： H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment apparatus and heat treatment method wherein a semiconductor substrate can be protected against contamination while it is subjected to a heat treatment.
SOLUTION: The heat treatment apparatus is equipped with a treatment chamber 13 which heat treats a substrate, a gas feed unit 15 which feeds gas to the processing chamber 13, a gas exhausting unit 17 which exhausts gas from the processing chamber 13, a first measuring unit 19 which is connected between the processing chamber 13 and the gas feed unit 15 to measure the concentrations of specific substances contained in the exhaust gas, a second measuring unit 21 which is connected between the processing chamber 13 and the gas exhausting unit 17 to measure the concentrations of specific substances contained in the exhaust gas, and a control unit 22 which issues a warning when the output of the first measuring unit 19 exceeds a first reference value or when an output difference between the first measuring unit 19 and the second measuring unit 21 exceeds a second reference value.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种热处理装置和热处理方法，其中半导体衬底可以在进行热处理时被防止污染。解决方案：热处理装置配备有热处理基板的处理室13，向处理室13供给气体的气体供给单元15，从处理室13排出气体的排气单元17，第一测量单元19，其连接在处理室13和气体供给单元15之间，以测量废气中所含的特定物质的浓度;第二测量单元21，连接在处理室13和排气单元之间 17，用于测量废气中含有的特定物质的浓度;以及控制单元22，当第一测量单元19的输出超过第一参考值时或当第一测量单元19和第二测量单元21超过第二参考值。版权所有（C）2007，JPO＆INPIT

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