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1. 发明专利

JP2006100739A Junction material, semiconductor device, manufacturing method thereof and joining method 审中-公开
标题翻译：接头材料，半导体器件及其制造方法及接合方法
公开(公告)号：JP2006100739A
公开(公告)日：2006-04-13
申请号：JP2004287890
申请日：2004-09-30
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKAHASHI TOSHIHIDE , KOMATSU SHUICHI , TADAUCHI KIMIHIRO , MATSUMOTO KAZUTAKA , KOMATSU IZURU
IPC分类号： H01L21/52
CPC分类号： H01L23/488 , H01L23/4827 , H01L23/49562 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/48 , H01L2224/04026 , H01L2224/04042 , H01L2224/29111 , H01L2224/32245 , H01L2224/32507 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83439 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/1301 , H01L2924/15747 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3651 , H01L2924/01026 , H01L2924/01028 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide a junction material and a semiconductor device wherein better mechanical strength is retained even on a high temperature condition, using a joining material not including lead substantially. SOLUTION: In the junction material 4, a first metal joined material 1 and a second metal joined material 2 are joined, wherein the material 2 consists of a material or materials selected from a group composed of nickel, palladium, platinum and aluminum, and a solid solution phase including the constituent element of the second metal joined material and tin exists in the cross-sectional fine structure of a joined layer 3. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种接合材料和半导体器件，其中即使在高温条件下也能保持更好的机械强度，使用不包括铅的接合材料。解决方案：在接合材料4中，接合第一金属接合材料1和第二金属接合材料2，其中材料2由选自镍，钯，铂和铝的材料组成，并且在接合层3的截面微细结构中存在包含第二金属接合材料的构成元素和锡的固溶相。（C）2006，JPO＆NCIPI

2. 发明专利

JPH09148528A DIELECTRIC CAPACITOR 失效
公开(公告)号：JPH09148528A
公开(公告)日：1997-06-06
申请号：JP31115295
申请日：1995-11-29
申请人： TOSHIBA CORP
发明人： KAWAKUBO TAKASHI , FUKUSHIMA SHIN , ABE KAZUHIDE , KOMATSU SHUICHI
IPC分类号： C30B29/06 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a capacitor wherein the ferroelectric Curie temperature is high, large residual dielectric polarization can be maintained at a high temperature, and a lower electrode can be finely worked. SOLUTION: This capacitor is provided with a conductive substrate 1 on the surface of which the (0001) face of hexagonal system appears, and a dielectric film 16 having perovskite type crystal structure which is epitaxially grown in (111) face orientation on the substrate 1. The lattice constant as (hcp) of the (a) axis of the hexagonal system of the conductive substrate 1 surface, and the original lattice constant ad of the dielectric material which is expressed by the (a) axis length of the perovskite type crystal satisfy the relation expressed by 1.002 )

3. 发明专利

JPH0757967A FABRICATION OF THIN FILM CAPACITOR 失效
公开(公告)号：JPH0757967A
公开(公告)日：1995-03-03
申请号：JP20380993
申请日：1993-08-18
申请人： TOSHIBA CORP
发明人： ITO HISASHI , YAMAMOTO YOSHIE , ABE KAZUHIDE , KOMATSU SHUICHI
IPC分类号： C23F1/00 , H01G4/10 , H01G4/33
摘要： PURPOSE:To conduct patterning conveniently while ensuring an appropriate level difference by forming a conductive layer and an oxide layer of perovskite- type structure sequentially on a base substrate and then etching the oxide layer selectively using an ethylene diamine tetraacetate-NH4OH-H2O solution. CONSTITUTION:A first conductive layer 2 and a dielectric layer 3 of SrTiO3 are formed sequentially on a base substrate 1. A resist 4 is formed thereon and the dielectric layer 3 of SrTiO3 is etched into a desired pattern using an ethylene diamine tetraacetate-NH4OH-H2O2-H2O solution. An opening 5 is then made in the SrTiO3 film as a part for leading out the first conductive layer 2. Furthermore, a second conductive layer 6 is formed on the dielectric layer 3 and a part 7 for leading out the first conductive layer 2 is patterned at the opening 5 thus completing a thin film capacitor 8.

4. 发明专利

JPH0547586A CAPACITOR 失效
公开(公告)号：JPH0547586A
公开(公告)日：1993-02-26
申请号：JP20579091
申请日：1991-08-16
申请人： TOSHIBA CORP
发明人： ABE KAZUHIDE , YAMAKAWA KOJI , KOMATSU SHUICHI
IPC分类号： H01G4/33 , H01G4/06
摘要： PURPOSE:To provide a capacitor capable of making sufficient connection electrically and mechanically with wiring on a circuit board by a method wherein a lower electrode, a dielectric thin film, an upper electrode, an insulating layer, and a pair of electrode terminals which are connected to the electrodes respectively and whose end faces are arranged on the same plane are provided. CONSTITUTION:A lower electrode 12 formed on a board 11, a dielectric thin film 13 provided onto the lower electrode 12, an upper electrode 14 built on the thin film 13, and an insulating layer 15 formed on the board 11 including the upper electrode 14 are provided. A set of electrode terminals 20 and 21 which are connected to the electrodes 12 and 14 respectively and arranged so as to position their end faces on the same plane is provided. By this setup, the capacitor part of this design can be lessened in number of processes required for being mounted on a circuit board as compared with a conventional thin film capacitor.

5. 发明专利

JPH04192527A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04192527A
公开(公告)日：1992-07-10
申请号：JP32477290
申请日：1990-11-27
申请人： TOSHIBA CORP
发明人： KAWANOUE TAKASHI , HASUNUMA MASAHIKO , SAWABE ATSUHITO , KOBANAWA YOSHIKO , KANEKO HISAFUMI , KOMATSU SHUICHI
IPC分类号： H01L23/52 , H01L21/3205
摘要： PURPOSE:To improve the adhesion between wirings and an insulation film by placing a Cu alloy coverage layer between Cu-based wiring and a protective insulation film. CONSTITUTION:A SiO2 or other insulation film 5 is placed on the active region formed on an Si substrate 4 and after a thin Cu film has been formed by sputter deposition on the surface of insulation film 5, patterning is performed to process a Cu wiring main body 1. Next, a thin Cu-Si alloy film 2a is selectively grown by a CVD process on the exposed surfaces of the Cu wiring main body 1 and after that, a CVD process is again used to form a PSG protective insulation film 6 on the Cu wiring 3a covered with a Cu-Si alloy layer and on the insulation film 5 to complete the semiconductor device. During this, since the Si contained in the Cu-Si alloy coverage layer 2a forms an SiO2 protection layer, no oxidation of the Cu wiring main body 1 occurs. As a result, excellent adhesion can be achieved between the Cu wiring 1 and the protective insulation film 6.

6. 发明专利

JPH02110957A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02110957A
公开(公告)日：1990-04-24
申请号：JP26315788
申请日：1988-10-19
申请人： TOSHIBA CORP
发明人： KANEKO HISAFUMI , HASUNUMA MASAHIKO , KAWANOUE TAKASHI , SAWABE ATSUHITO , KOMATSU SHUICHI
IPC分类号： H01L23/522 , H01L21/768
摘要： PURPOSE:To prevent the disconnection of a metal wiring due to the stress migration to the metal wiring when the metal wiring is coated with an interlaminar insulating film or a passivation film by a method wherein a gap is provided between the metal wiring and the interlaminar insulating film or the passivation film. CONSTITUTION:In a semiconductor device provided with a metal wiring 4 coated with an interlaminar insulating film 5 or a passivation film, a gap is provided between the metal wiring 4 and the interlaminar insulating film 5 or the passivation film. For instance, a thermal oxide film 2 is formed on a silicon substrate 1, and Al film is deposited thereon through a sputtering method, then a resist pattern 3 3000Angstrom in thickness is formed on the Al film, and the Al film is selectively etched to form an Al wiring 4. Next, the interlaminar insulating film 5 of SiN 1000Angstrom in thickness is formed as the resist pattern 3 is kept unremoved. Then, gas discharging micro-holes are provided to the interlaminar insulating film 5, and the resist pattern 3 on the Al wiring 4 is dispelled to remove by thermally treating it in an oxygen atmosphere at a temperature of 500 deg.C.

7. 发明专利

JPS6383932A OPTICAL RECORDING MEDIUM 失效
公开(公告)号：JPS6383932A
公开(公告)日：1988-04-14
申请号：JP23060686
申请日：1986-09-29
申请人： TOSHIBA CORP
发明人： KOMATSU SHUICHI , IKEGAWA SUMIO
IPC分类号： B41M5/26 , G11B7/24
摘要： PURPOSE:To improve the efficiency of cooling at the time of recording and the reflectivity at the time of reproduction by using a layer having the structure formed by alternately laminating two layers of alloy or intermetallic compd. with which a crystal structure change between crystal and crystal is generated by projection of laser light and one layer of transparent dielectric layer as an optical recording layer. CONSTITUTION:The optical recording layer 12 alternately laminated with the alloy layers or intermetallic compd. layers 121 with which the crystal structure change between the crystal and the crystal is generated by the projection of the laser light and the transparent dielectric layers 12$2 is formed on a transparent substrate 11 and a protective layer 13 is coated on the recording layer 12. Information recording is executed by projecting the laser light to said layer to change the crystal structure of the layers 121 in the irradiated parts of the layer 12, by which the reflectivity to the laser light is changed to discriminate said parts from the recording layer 12 of the parts except the projected layer. Reproduction is executed by making use of the difference in the reflectivity of the irradiated part (recording part) to the laser light from the layer 12 of the parts except the recording part. Since the thickness of the alloy layers or intermetallic compd. layers 121 is thereby reduced, a high quick cooling effect is provided and in addition, the considerable reduction in the reflectivity is obviated.

8. 发明专利

JPS6277445A ELECTRODE ALLOY FOR GLASS MELTING FURNACE 失效
公开(公告)号：JPS6277445A
公开(公告)日：1987-04-09
申请号：JP21643085
申请日：1985-09-30
申请人： TOSHIBA CORP
发明人： KOMATSU SHUICHI , KAMATA MASATO
IPC分类号： C22C30/00 , C03B5/027 , C03B5/03 , C22C27/06 , C22C38/00 , C22C38/50 , F27D11/08 , G21F9/30 , H05B7/06
摘要： PURPOSE:To manufacture an electrode having superior corrosion resistance and a high m.p. by using a Cr-Ni-Fe alloy having a specified composition as a material for an electrode used to cake fission products in used nuclear fuel by a glass caking method. CONSTITUTION:A Cr-Ni-Fe alloy having a composition consisting of, by weight, 25-50% Cr, 10-40% Ni, 0.1-1% Mo, 0.1-1% Ti, 0.005-0.5% Al, 0.01-0.6% Si, 0.1-1.0% Mn and the balance Fe is used as a material for an electrode used in a glass melting furnace when high-level waste liquor produced by the reprocessing of used nuclear fuel is caked by a glass caking method by which superior safety ad storage stability are provided. The alloy has a higher m.p. than 'Inconel 690(R)' as a conventional material for such an electrode, also has superior corrosion resistance and stabilizes the operation of the glass melting furnace.

9. 发明专利

JP2008080393A Joining body using peritectic system alloy, joining method, and semiconductor device 审中-公开
标题翻译：使用系统合金，接合方法和半导体器件接合体
公开(公告)号：JP2008080393A
公开(公告)日：2008-04-10
申请号：JP2006266602
申请日：2006-09-29
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKAHASHI TOSHIHIDE , KONO RYUKO , KOMATSU SHUICHI
IPC分类号： B23K35/26 , B23K1/00 , B23K35/30 , B23K101/40 , C22C5/02 , C22C13/00 , H01L21/52 , H05K3/34
CPC分类号： H01L24/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01322 , H01L2924/1301 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a joining body which can keep excellent mechanical strength even under high temperature conditions using joining material having no lead substantially, and further to provide a semiconductor device. SOLUTION: Instead of an expensive Au-Sn eutectic alloy substantially containing 80 mass% of Au, an Au-Sn alloy containing Au less than that of the Au-Sn eutectic alloy by 40 to 60% can be applied for high temperature soldering by introducing a quenching process in a mounting process. The melting point of a low-Au-containing alloy produced at an ordinary cooling speed is disturbed by a non-equilibrium peritectic reaction, and becomes lower than the melting point on the equilibrium diagram. In this case, when the Au-Sn alloy is produced by quenching, the amount of the phase to be produced at the melting point on the equilibrium diagram or at its temperature increases, and the heat resisting property can be improved. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供即使在高温条件下也可以使用不具有铅的接合材料而能够保持优异的机械强度的接合体，并且还提供半导体器件。
解决方案：代替含有80质量％的Au的昂贵的Au-Sn共晶合金，可以应用含Au少于Au-Sn共晶合金的Au-Sn合金40〜60％的Au-Sn合金，用于高温通过在安装过程中引入淬火工艺进行焊接。以普通冷却速度生产的含低金属的合金的熔点受到非平衡包晶反应的干扰，并且变得低于平衡图上的熔点。在这种情况下，当通过淬火制造Au-Sn合金时，在平衡图上或在其温度下在熔点产生的相的量增加，并且可以提高耐热性能。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JPH10270651A SEMICONDUCTOR STORAGE DEVICE 失效
公开(公告)号：JPH10270651A
公开(公告)日：1998-10-09
申请号：JP7099997
申请日：1997-03-25
申请人： TOSHIBA CORP
发明人： KAWAKUBO TAKASHI , SANO KENYA , YANASE NAOKO , ABE KAZUHIDE , KOMATSU SHUICHI
IPC分类号： H01L21/8247 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a capacitor cell whose formation method is easy and relatively high integration is possible in a semiconductor memory, etc., wherein a ferroelectric thin film which shows ferroelectricity by using an epitaxial effect or a ferroelectric thin film wherein ferroelectricity is reinforced by the eptiaxial effect is used. SOLUTION: The device is constituted having a memory cell array wherein a memory cell constituted of a transistor and a capacitor is arranged in a matrix on a semiconductor board 1. A barrier metallic layer 12, a lower electrode layer 13 and a ferrolelectric film 14 are subjected to eptiaxial growth or orientation growth one by one for the side of the board/inside a contact hole manufactured on a source or drain electrode 6 of the transistor or its extended conductive layer for constituting the capacitor.

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