专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2017118092A 基板処理装置、基板処理方法およびエッチング液审中-公开
公开(公告)号：JP2017118092A
公开(公告)日：2017-06-29
申请号：JP2016126927
申请日：2016-06-27
申请人：株式会社東芝 , Toshiba Corp
发明人： SATO KATSUHIRO , DEURA KAORI , KITAMURA YOSHINORI , TERADA TAKAHIRO , OGAWA YOSHIHIRO , HASHIMOTO YUJI , HIRAKAWA MASAAKI , MURAKAMI YUKAKO , HIRABAYASHI HIDEAKI
IPC分类号： H01L21/308 , H01L21/306
摘要：【課題】シリカの析出を抑制する基板処理装置、基板処理方法およびエッチング液を提供する。【解決手段】本実施形態による基板処理装置は、処理部と、循環路と、加熱部と、第1投入部とを備える。処理部は、リン酸とシリカ析出抑制剤とを含むエッチング液が供給され、エッチング液に、表面にシリコン窒化膜を有する基板を接触させて、基板からシリコン窒化膜を除去する。循環路は、処理部に対してエッチング液を循環させる。加熱部は、エッチング液を加熱する。第1投入部は、循環路に設けられ、エッチング液中にシリカ析出抑制剤を投入する。【選択図】図1

2. 发明专利

JP2013016699A Substrate processing method and substrate processing apparatus 有权
标题翻译：基板加工方法和基板加工装置
公开(公告)号：JP2013016699A
公开(公告)日：2013-01-24
申请号：JP2011149367
申请日：2011-07-05
申请人： Toshiba Corp , 株式会社東芝
发明人： UOZUMI NOBUHIRO , OGAWA YOSHIHIRO , IIMORI HIROYASU , KOIDE TATSUHIKO , KIMURA SHINSUKE
IPC分类号： H01L21/304 , H01L21/027
CPC分类号： H01L21/67075 , G03F7/162 , G03F7/405 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67098 , H01L21/6715 , H01L21/67739 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus which suppress pattern collapse when a substrate is dehydrated after a liquid treatment.SOLUTION: There is provided a substrate processing method. The substrate processing method includes a process of treating a substrate that has a structure formed on at least a principal plane by liquid. The substrate processing method further includes a process of bring a solution into contact with the structure wetted with the liquid and forming a supporting material that supports the structure by changing at least a part of the solution into a solid state by at least any one of the steps of: reacting the solution; decreasing the amount of solvent contained in the solution; and depositing at least a part of materials solved in the solution. The substrate processing method further includes a process of removing the supporting material by changing the supporting material from a solid phase to a vapor phase without passing through a liquid phase.
摘要翻译：要解决的问题：提供一种在液体处理之后基板脱水时抑制图案塌陷的基板处理方法和基板处理装置。提供了一种基板处理方法。基板处理方法包括用液体处理至少在主平面上形成的结构的基板的处理。基板处理方法还包括使溶液与被液体润湿的结构接触并形成支撑材料的方法，所述支撑材料通过将溶液的至少一部分改变为固体状态而至少通过至少任一种步骤：使溶液反应; 减少溶液中所含溶剂的量; 以及沉积溶解在溶液中的至少一部分材料。基板处理方法还包括通过将支撑材料从固相改变为气相而不通过液相来除去支撑材料的工艺。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012080033A Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2012080033A
公开(公告)日：2012-04-19
申请号：JP2010226513
申请日：2010-10-06
申请人： Toshiba Corp , 株式会社東芝
发明人： OGAWA YOSHIHIRO , KOIDE TATSUHIKO , KIMURA SHINSUKE
IPC分类号： H01L21/304
CPC分类号： H01L21/02071 , H01L21/02057 , H01L21/265 , H01L21/31133 , H01L27/1052
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of preventing a formed fine pattern from collapsing in a drying step.SOLUTION: A manufacturing method of a semiconductor device for providing a formation region of a first pattern and a formation region of a second pattern which is adjacent to the formation region of the first pattern and at least whose pattern width is wider than the pattern width of the first pattern or whose aspect ratio is smaller than the aspect ratio of the first pattern for a workpiece comprises: a step of forming the first pattern in which a first film having a first contact angle is disposed on the outermost surface and the second pattern in which a second film having a second contact angle smaller than the contact angle of the first film is disposed on the outermost surface; a step of cleaning the formation regions of the first and second patterns and rinsing them with a rinse liquid; and a step of drying the rinsed first and second patterns.
摘要翻译：解决的问题：提供一种能够防止形成的精细图案在干燥步骤中塌陷的半导体器件的制造方法。解决方案：一种半导体器件的制造方法，用于提供与第一图案的形成区域相邻的第一图案的形成区域和第二图案的形成区域，并且至少其图案宽度比第一图案的图案宽度或其长宽比小于工件的第一图案的纵横比包括：形成第一图案的步骤，其中具有第一接触角的第一膜设置在最外表面上，第二图案，其中具有小于第一膜的接触角的第二接触角的第二膜设置在最外表面上; 清洗第一和第二图案的形成区域并用冲洗液冲洗的步骤; 以及干燥冲洗后的第一和第二图案的步骤。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011129585A Apparatus and method of treating surface of semiconductor substrate 有权
标题翻译：装置和处理半导体基板表面的方法
公开(公告)号：JP2011129585A
公开(公告)日：2011-06-30
申请号：JP2009284361
申请日：2009-12-15
申请人： Toshiba Corp , 株式会社東芝
发明人： OGUCHI HISASHI , KOIDE TATSUHIKO , OGAWA YOSHIHIRO , KIMURA SHINSUKE , TOMITA HIROSHI
IPC分类号： H01L21/304 , H01L21/306 , H01L21/308
CPC分类号： H01L21/02057 , H01L21/67017 , H01L21/67028 , H01L21/67051
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and method of treating a surface of a semiconductor substrate that clean and dry the semiconductor substrate while preventing a pattern from being collapsed.
SOLUTION: A diluted water repellent is supplied to a surface of the semiconductor substrate W so as to form a water-repellent protective film on a surface of a convex pattern formed on the semiconductor substrate W. Since water repelling capability decreases more and more as the time from mixing of the water repellent and a diluent to supply to the substrate surface becomes longer and longer, a mixing valve 61 which mixes the water repellent and diluent is provided right before a nozzle 64 discharging the diluted water repellent to prevent the water repelling capability of the water repellent from decreasing.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种处理半导体衬底的表面的装置和方法，其在防止图案被折叠的同时清洁和干燥半导体衬底。解决方案：向半导体基板W的表面供给稀释斥水剂，以在形成于半导体基板W上的凸形图案的表面上形成防水保护膜。由于排水能力降低，更多的是随着防水剂和稀释剂的混合供应到基材表面的时间越来越长，在排出稀释斥水剂的喷嘴64之前提供混合防水剂和稀释剂的混合阀61，以防止防水剂的排斥能力下降。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2011071199A Apparatus and method for cleaning semiconductor substrate 有权
标题翻译：用于清洁半导体基板的装置和方法
公开(公告)号：JP2011071199A
公开(公告)日：2011-04-07
申请号：JP2009219111
申请日：2009-09-24
申请人： Toshiba Corp , 株式会社東芝
发明人： OGAWA YOSHIHIRO , KAWAMOTO HIROSHI , ONODA HAJIME
IPC分类号： H01L21/304
CPC分类号： H01L21/67028 , B08B3/022 , C11D11/0047 , H01L21/02057
摘要： PROBLEM TO BE SOLVED: To dramatically prevent an effect on fine patterns when drying a semiconductor substrate after being rinsed.
SOLUTION: A method of cleaning a semiconductor substrate includes: a cleaning step of cleaning a semiconductor substrate with a cleaning liquid; a rinsing step of rinsing the semiconductor substrate with rinse water after the cleaning step; and a drying step of drying the semiconductor substrate after the semiconductor substrate is rinsed. A temperature of the rinse water is set to ≥70°C in the rinsing step, and the rinse water is set to be acidic.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了在冲洗后干燥半导体衬底时显着地防止对精细图案的影响。解决方案：一种清洁半导体衬底的方法包括：清洁步骤，用清洁液清洗半导体衬底; 漂洗步骤，在清洗步骤之后用冲洗水冲洗半导体衬底; 以及在半导体衬底被冲洗之后干燥半导体衬底的干燥步骤。在冲洗步骤中冲洗水的温度设定为≥70℃，冲洗水设定为酸性。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010078584A Method and apparatus for evaluating plasmon, plasmon waveguide system, and optical pickup 有权
标题翻译：用于评估等离子体，等离子体波导系统和光学拾取的方法和装置
公开(公告)号：JP2010078584A
公开(公告)日：2010-04-08
申请号：JP2009051103
申请日：2009-03-04
申请人： Tokyo Institute Of Technology , Toshiba Corp , 国立大学法人東京工業大学 , 株式会社東芝
发明人： TODORI KENJI , MINAMI FUJIO , OGAWA YOSHIHIRO , YAMAGIWA MASAKAZU , YAMADA HIROSHI , MARUYAMA MIHO
IPC分类号： G01N21/64 , G01N21/47 , G01N21/65 , G01Q30/02 , G01Q60/18 , G01Q60/34 , G01Q70/10 , G01Q80/00
CPC分类号： G01N21/658 , G01N2021/656
摘要： PROBLEM TO BE SOLVED: To evaluate the density distribution of plasmon excited at a particular wavelength in a metal nanostructure. SOLUTION: A method for evaluating plasmon includes the steps of: irradiating, with first irradiating light, the surface of a sample obtained by forming, on a metal structure, a light-generating film that either emits light or generates Raman scattering light when irradiated with excitation light, to excite plasmon on the surface of the metal structure, irradiating the light-generating film with second irradiating light to cause the light-generating film to either emit light or generate the raman scattering light, and scanning the surface of the sample with a probe having metal particles provided on the tip thereof; receiving the light emitted from the light-generating film, while scanning with the probe; and obtaining an image of the light thus received. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：评估在金属纳米结构中在特定波长激发的等离子体激元的密度分布。解决方案：一种用于评估等离子体激元的方法包括以下步骤：用第一照射光照射通过在金属结构上形成发光或产生拉曼散射光的发光膜而获得的样品的表面当用激发光照射时，激发金属结构表面上的等离子体激元，用第二照射光照射发光膜，使发光膜发光或产生拉曼散射光，并扫描具有设置在其尖端上的具有金属颗粒的探针的样品; 在用探针扫描的同时接收从发光膜发射的光; 并获得如此接收的光的图像。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2007173623A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2007173623A
公开(公告)日：2007-07-05
申请号：JP2005370823
申请日：2005-12-22
申请人： Toshiba Corp , 株式会社東芝
发明人： UMEZAWA KAORI , TOMITA HIROSHI , SAKURAI HIROKI , OGAWA YOSHIHIRO , UOZUMI NOBUHIRO
IPC分类号： H01L21/8234 , H01L27/088
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of highly accurately controlling the thickness of a gate insulating film with an occurrence of a foreign-body suppressed.
SOLUTION: The method for manufacturing the semiconductor device comprises the following steps. A first gate insulating film is formed on a semiconductor substrate. A part of the first gate insulating film is covered by a resist film. The surface of the resist film is modified to the state to be easily resolved. The resist film is resolved by the solution. A second insulating film is formed to a part on the semiconductor substrate with a first gate insulating film removed. A gate electrode is formed on the first gate insulating film and the second gate insulating film. A source/drain diffusion region sandwiching the gate electrode is formed on the surface of the semiconductor substrate.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种能够高精度地控制具有抑制异物发生的栅极绝缘膜的厚度的半导体器件的制造方法。解决方案：制造半导体器件的方法包括以下步骤。第一栅极绝缘膜形成在半导体衬底上。第一栅极绝缘膜的一部分被抗蚀剂膜覆盖。抗蚀剂膜的表面被修改为容易分辨的状态。抗蚀剂膜通过溶液解决。第二绝缘膜形成在半导体衬底上的部分上，其中去除了第一栅极绝缘膜。在第一栅极绝缘膜和第二栅极绝缘膜上形成栅电极。在半导体衬底的表面上形成夹着栅电极的源极/漏极扩散区域。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2004214243A Method and device for etching semiconductor wafer 审中-公开
公开(公告)号：JP2004214243A
公开(公告)日：2004-07-29
申请号：JP2002378799
申请日：2002-12-27
申请人： Toshiba Corp , 株式会社東芝
发明人： OGAWA YOSHIHIRO , OGUCHI HISASHI , TOMITA HIROSHI , IIMORI HIROYASU
IPC分类号： H01L21/306 , H01L21/00 , H01L21/302 , H01L21/311 , H01L21/461
CPC分类号： H01L21/67248 , H01L21/31111 , H01L21/67086
摘要： PROBLEM TO BE SOLVED: To provide an etching method of a wafer, with which a highly precise etching processing where etching quantity of an SiN film on the wafer is arranged between batches or in the batch is realized even if the batches different in the number of wafers are used, and to provide an etching device for performing the method.
SOLUTION: In an H3PO4 etching process with respect to the wafer, the number of wafers 10 supplied to an etching tank 1 is previously recognized. Thus, a temperature B considering a drop amount of the temperature (Δ=B-A) from a setting temperature A is set when the wafer is supplied. A silicon nitride film formed on the wafer 10 is highly precisely etched while the temperature is controlled at the temperature A after the wafer is supplied. Thus, dispersion of the etching amount due to a difference in the number of wafers per batch can be suppressed. Then, highly precise wafer etching, especially, highly precise etching of the SiN film formed on the wafer can be etched.
COPYRIGHT: (C)2004,JPO&NCIPI

9. 发明专利

JP2001284306A APPARATUS AND METHOD FOR CLEANING SUBSTRATE 失效
公开(公告)号：JP2001284306A
公开(公告)日：2001-10-12
申请号：JP2000089769
申请日：2000-03-28
申请人： TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： OGAWA YOSHIHIRO , KAWAMOTO HIROSHI , ISHIZAKI ITSURO , MIYAZAKI KUNIHIRO
IPC分类号： B08B3/12 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and method for cleaning a substrate that prevents damage to the substrate, and at the same time can carry out ultrasonic washing with a high particle elimination rate. SOLUTION: A substrate-cleaning apparatus 1 is equipped with a demineralized water containing gas concentration control part 11, a chemical liquid-mixing part 13, a substrate-cleaning both 27, an ultrasonic vibrator 21, an ultrasonic wave control part 15, a temperature sensor 31, and a temperature monitor 33. In this case, the temperature of cleaning fluid in the substrate- cleaning tank 27 is measured by the temperature sensor 31. Based on the measurement result, the temperature monitor 33 calculates changes in the temperature of the cleaning fluid in the cleaning both 27. According to the calculation result and the correlation between the change in the temperature of the cleaning fluid and the damage of a substrate S, a supply voltage to the ultrasonic vibrator 21 is reduced or is set to zero, or the concentration of the demineralized water containing gas is increased.

10. 发明专利

JP2011129583A Surface treatment apparatus and method for semiconductor substrate 有权
标题翻译：表面处理装置和半导体基板的方法
公开(公告)号：JP2011129583A
公开(公告)日：2011-06-30
申请号：JP2009284347
申请日：2009-12-15
申请人： Toshiba Corp , 株式会社東芝
发明人： KOIDE TATSUHIKO , OGAWA YOSHIHIRO , KIMURA SHINSUKE , OGUCHI HISASHI , TOMITA HIROSHI
IPC分类号： H01L21/304 , H01L21/306 , H01L21/308
CPC分类号： H01L21/02057 , H01L21/3065 , H01L21/31 , H01L21/31116 , H01L21/324 , H01L21/67028
摘要： PROBLEM TO BE SOLVED: To provide a surface treatment apparatus for a semiconductor substrate that cleans and dries the substrate while preventing a pattern from being collapsed. SOLUTION: A water repelling agent 106 is supplied to the surface of the semiconductor substrate W in order to form a water repellent protective film on the surface of a projection pattern formed on the semiconductor substrate W. Before the water repelling agent is supplied, a liquid chemical 103 with high oxidizing power is supplied or irradiation with UV light is carried out to forcibly oxidize the projection pattern surface. Consequently, the water repellent protective film is easily formed on the projection pattern surface, and the projection pattern is prevented from being collapsed. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于半导体衬底的表面处理装置，其在防止图案被折叠的同时清洁和干燥衬底。解决方案：为了在形成在半导体衬底W上的突起图案的表面上形成防水保护膜，将防水剂106供给到半导体衬底W的表面。在提供防水剂之前供给具有高氧化能力的液体化学品103或进行紫外线照射以强制地氧化突出图案表面。因此，在突起图案表面上容易地形成防水保护膜，并且防止突起图案被折叠。版权所有（C）2011，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式