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1. 发明专利

JP2010045268A Stencil mask and method for manufacturing the same 有权
标题翻译：横断面及其制造方法
公开(公告)号：JP2010045268A
公开(公告)日：2010-02-25
申请号：JP2008209440
申请日：2008-08-18
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： AIDA TAKENORI , EGUCHI HIDEYUKI
IPC分类号： H01L21/027 , G03F1/20
摘要： PROBLEM TO BE SOLVED: To provide a stencil mask for reducing an influence on the roughness of a transfer penetration pattern, and for controlling the dimension of the transfer penetration pattern while maintaining the rectangularity of the transfer penetration pattern or dimension uniformity in a plane, and a method for manufacturing the stencil mask.
SOLUTION: This stencil mask is provided with: a support formed with an opening; an etching stopper layer pattern-formed on the support; and a thin film formed with a transfer penetration pattern on the etching stopper layer wherein the surface or the whole surface of the support part and the thin film is oxidized.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于减少对转印穿透图案的粗糙度的影响的模版掩模，并且用于控制转印穿透图案的尺寸，同时保持转印穿透图案的矩形或尺寸均匀性在平面以及用于制造模板掩模的方法。
解决方案：该模板掩模设置有：形成有开口的支撑件; 图案形成在支撑体上的蚀刻停止层; 以及在蚀刻停止层上形成有转印穿透图案的薄膜，其中支撑部分的表面或整个表面和薄膜被氧化。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2008078527A Method for manufacturing ion-implantation stencil-mask and ion-implantation stencil-mask 有权
标题翻译：用于制造离子植入物膜和离子植入物的方法
公开(公告)号：JP2008078527A
公开(公告)日：2008-04-03
申请号：JP2006258368
申请日：2006-09-25
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： SUMITA TOMOYA , EGUCHI HIDEYUKI
IPC分类号： H01L21/266 , C23C14/04
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an ion-implantation stencil-mask which reduces defects of the ion-implantation stencil mask that a deflection of a membrane is caused from the heating of an ion beam and has an excellent heat resistance, durability, and ion implantation accuracy in an ion-implantation process where a semiconductor device manufacturing is carried out using the ion-implantation stencil-mask; and to provide the ion-implantation stencil-mask.
SOLUTION: The method for manufacturing an ion-implantation stencil-mask includes processes of forming a first etching stopper layer on a supporting layer, forming a first membrane layer on the first etching stopper layer, forming a second etching stopper layer on the first membrane layer, forming a second membrane layer on the second etching stopper layer, forming an opening on the supporting layer, and forming a through hole pattern for ion implantation through the first membrane layer and second membrane layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种离子注入模板掩模的制造方法，其减少离子注入模板掩模的缺陷，使得膜的偏转由离子束的加热引起，并且具有优异的在使用离子注入模板掩模进行半导体器件制造的离子注入工艺中的耐热性，耐久性和离子注入精度; 并提供离子注入模板掩模。解决方案：用于制造离子注入模板掩模的方法包括在支撑层上形成第一蚀刻停止层的步骤，在第一蚀刻停止层上形成第一膜层，在第一蚀刻停止层上形成第二蚀刻停止层第一膜层，在第二蚀刻停止层上形成第二膜层，在支撑层上形成开口，并且通过第一膜层和第二膜层形成用于离子注入的通孔图案。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007220937A Overlapping drawing method of substrate 审中-公开
标题翻译：基板重叠绘图方法
公开(公告)号：JP2007220937A
公开(公告)日：2007-08-30
申请号：JP2006040432
申请日：2006-02-17
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： EGUCHI HIDEYUKI , YOSHII TAKASHI , OGAWA KENTARO
IPC分类号： H01L21/027 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To improve the position accuracy of overlapping upon overlapping drawing onto a low rigidity substrate, and particularly to provide a position correcting method when the substrate is mechanically fixed in a drawing machine. SOLUTION: The method is one where overlapping drawing is performed on a substrate using a reference mark formed on the substrate in advance. The method comprises: a process of making the reference mark in a region other than a pattern formation region on the substrate in advance; a process of measuring position coordinates of the reference mark by a position coordinate measuring machine; a process of measuring the position coordinates of the reference mark in a drawing machine; a process of correcting position coordinates of an overlapping drawing pattern, on the basis of the position coordinates of the reference mark on the position coordinate measuring machine and the position coordinates in the drawing machine; and a process of performing overlapping drawing without taking out the substrate from the drawing machine. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提高重叠拉拔到低刚性基板上的重叠位置精度，特别是当基板被机械地固定在拉丝机中时提供位置校正方法。解决方案：该方法是预先在衬底上使用形成在衬底上的参考标记在衬底上进行重叠绘图的方法。该方法包括：预先在基板上的图案形成区域以外的区域中制作基准标记的工序; 通过位置坐标测量机测量参考标记的位置坐标的过程; 测量拉丝机中参考标记的位置坐标的过程; 基于位置坐标测量机上的基准标记的位置坐标和绘图机中的位置坐标来校正重叠绘制图案的位置坐标的处理; 以及在从拉丝机取出基材的情况下进行重叠拉伸的工序。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2004327844A Silicon nitride film, its producing process, and functional device 审中-公开
公开(公告)号：JP2004327844A
公开(公告)日：2004-11-18
申请号：JP2003122477
申请日：2003-04-25
申请人： National Institute For Materials Science , Toppan Printing Co Ltd , 凸版印刷株式会社 , 独立行政法人物質・材料研究機構
发明人： GAMO SHUSUKE , EGUCHI HIDEYUKI , KUROSU TOSHIAKI , ANDO HISAHIRO
IPC分类号： G03F1/22 , H01L21/318 , H01L21/336 , H01L29/786 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide a stress-free or low stress silicon nitride film applicable as a semiconductor device and a mask member. SOLUTION: In the amorphous silicon nitride film formed on a substrate 1, the compositional ratio of the number of atoms of nitrogen to silicon is set in the range of 1.1-1.5 and the atomic ratio of hydrogen in the film is set in the range of 10-15%. COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2001007005A APERTURE FOR ELECTRON BEAM LITHOGRAPHY, MASK HOLDER, AND ELECTRON BEAM EXPOSURE MASK USING THEM 失效
公开(公告)号：JP2001007005A
公开(公告)日：2001-01-12
申请号：JP17660099
申请日：1999-06-23
申请人： TOPPAN PRINTING CO LTD
发明人： EGUCHI HIDEYUKI , TAMURA AKIRA , ITOU KOUJIROU , SASAKI HIRONOBU , KONISHI TOSHIO
IPC分类号： H01L21/027 , G03F1/20 , G03F1/68 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide an electron beam exposure mask which is free of contamination and on which an aperture for electron beam lithography and a mask holder are aligned with each other with superior accuracy. SOLUTION: An aperture 10 for electron beam lithography, in which a transfer mask opening pattern 5a of a transfer mask, a support frame 1a, a transfer mask opening section 7, a holding frame 1b, and a recessed section pattern 8 for positioning formed between the frames 1a and 1b is manufactured by working a laminated silicon substrate. A projecting section pattern 21 for positioning and a conductive layer 23 are formed on the holding member 21 of a mask holder 20. Then an electron beam exposure mask 100 is obtained by pasting an aperture 10 to the mask holder 20, using the projecting section pattern 21 as a guide and adhering and fixing the holding frame 1b of the aperture 10 to the holding member 21 of the mask holder 20 through pressing and heating.

6. 发明专利

JP2000138149A APERTURE FOR ELECTRON BEAM LITHOGRAPHY AND ITS MANUFACTURE 失效
公开(公告)号：JP2000138149A
公开(公告)日：2000-05-16
申请号：JP30863398
申请日：1998-10-29
申请人： TOPPAN PRINTING CO LTD
发明人： EGUCHI HIDEYUKI , KONISHI TOSHIO , SASAKI HIRONOBU
IPC分类号： H01L21/027 , G03F1/20 , G03F1/40 , G03F7/20 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To reduce the number of for manufacturing an aperture for electron beam lithography and provide an aperture for electron beam lithography with high cost performance and its manufacture. SOLUTION: A Cr layer 5 is formed on both surfaces of a laminated silicon substrate 4, then a Cr pattern for forming an electron beam transmitting mask 5a and a Cr pattern for forming a supporting frame 5b are formed by patterning. By using the Cr pattern for forming an electron beam transmitting mask 5a as a mask, a single crystal silicon wafer 3 is etched to form an electron beam transmitting mask 6. By using the Cr pattern for forming a supporting frame 5b as a mask, a single crystal silicon wafer 1 is etched to form a supporting frame 1a and an electron beam transmitting aperture 7. Finally, an oxide film 2 on the electron beam transmitting mask 6 is removed by etching to form an electron beam transmitting aperture mask 6a and thus an aperture for electron beam lithography 10 is manufactured.

7. 发明专利

JP2010183044A Stencil mask and electron beam exposure metho 有权
标题翻译：横断面和电子束暴露甲烷
公开(公告)号：JP2010183044A
公开(公告)日：2010-08-19
申请号：JP2009061984
申请日：2009-03-13
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： DAINO KAZUTO , EGUCHI HIDEYUKI
IPC分类号： H01L21/027 , G03F1/20 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide a stencil mask and an electron beam exposure method, by which in a partial batch exposure process, an electron beam can be put on standby in a deflection region and in conjunction, the stencil mask is prevented from a rapid temperature rise, exhibiting an excellent heat resistance.
SOLUTION: The stencil mask has a membrane member in which a stencil pattern is to be formed and a bulk member that surrounds the membrane member. In this stencil mask, the bulk member has a holding bulk region that holds the membrane member and a bulk region for standby that is laid adjacently to the membrane member to put a radiated electron beam on standby.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种模板掩模和电子束曝光方法，通过该方法，在局部批量曝光工艺中，电子束可以在偏转区域中被备用并且结合在一起，防止了模板掩模从快速升温，表现出优异的耐热性。解决方案：模板掩模具有膜构件，其中将形成模板图案和围绕膜构件的主体构件。在该模板掩模中，主体部件具有保持膜部件的保持体积区域和与膜部件相邻放置的待机的主体区域，以将辐射电子束置于待机状态。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2009231324A Stencil mask and method of manufacturing the same 有权
标题翻译：横断面及其制造方法
公开(公告)号：JP2009231324A
公开(公告)日：2009-10-08
申请号：JP2008071386
申请日：2008-03-19
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： EGUCHI HIDEYUKI
IPC分类号： H01L21/027 , G03F1/20
摘要： PROBLEM TO BE SOLVED: To provide a stencil mask which can improve mechanical strength and heat resistance and has superior working accuracy, and to provide a method of manufacturing the same. SOLUTION: The stencil mask includes a supporting layer, a reinforcing layer and a membrane layer 1, wherein a reinforcing layer 2 of an opening excludes a supporting substrate layer 5, and a membrane layer opening formed of a membrane layer excludes a part of the reinforcing layer in a multilayer membrane layer composed of a membrane layers. The area of the reinforcing layer 2 and the membrane layer opening is larger than a stencil pattern area wherein the membrane layer is removed like a pattern. The stencil pattern is formed in a pattern area, and the reinforcing and the membrane layer are made of silicon. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够提高机械强度和耐热性并且具有优异的加工精度的模板掩模，并提供其制造方法。解决方案：模板掩模包括支撑层，增强层和膜层1，其中开口的加强层2不包括支撑基底层5，并且由膜层形成的膜层开口排除了部分在由膜层构成的多层膜层中的增强层。加强层2和膜层开口的面积大于模板图案区域，其中膜层像图案一样被去除。模板图案形成在图案区域中，并且增强层和膜层由硅制成。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009081369A Manufacturing method of stencil mask 审中-公开
标题翻译：制膜方法
公开(公告)号：JP2009081369A
公开(公告)日：2009-04-16
申请号：JP2007250998
申请日：2007-09-27
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： AIDA TAKENORI , EGUCHI HIDEYUKI
IPC分类号： H01L21/027 , G03F1/20 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a stencil mask which is suitable for manufacture of the stencil mask including a fine throughhole pattern. SOLUTION: A hard mask layer is patterned through self-organization of a block copolymer, by which a micropattern is formed in the hard mask layer, and at the same time the hard mask layer can be formed as a mask having a high etching selection ratio to a thin-film layer. With such constitution, the mask for forming the throughhole pattern in the thin-film layer can be formed with the fine pattern, and the stencil mask having the fine throughhole pattern can be manufactured. COPYRIGHT: (C)2009,JPO&INPIT

10. 发明专利

JP2008244323A Stencil mask 审中-公开
标题翻译： STENCIL MASK
公开(公告)号：JP2008244323A
公开(公告)日：2008-10-09
申请号：JP2007085486
申请日：2007-03-28
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： EGUCHI HIDEYUKI
IPC分类号： H01L21/027 , G03F1/20 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide a stencil mask capable of easily removing a contaminant by cleaning after contamination, irrespective of the kind of a contaminant and of being reutilized keeping conductivity thereof. SOLUTION: A stencil mask 100 for charged particle beam includes a silicon support substrate layer 3, having an opening for transmitting a charged particle beam therethrough; a membrane layer 1 made of a silicon single crystal on which a through pattern that becomes a transfer pattern is formed; and a conductive exfoliation layer 4, formed on opposite side exposed surfaces of the membrane layer 1 and on an exposed surface of the silicon support substrate layer 3 on the opposite side to the intermediate insulating layer 2 side and dissolvable to a mask cleaning solution. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在污染之后通过清洁容易地去除污染物的模版掩模，而不管污染物的种类和被再利用而保持其导电性。解决方案：用于带电粒子束的模板掩模100包括硅支撑基底层3，其具有用于透过带电粒子束的开口; 由形成了作为转印图案的贯通图案的硅单晶构成的膜层1; 以及导电剥离层4，其形成在膜层1的相对侧的露出表面上和硅衬底层3的与中间绝缘层2侧相反的一侧的暴露表面上并且可溶于掩模清洁溶液。版权所有（C）2009，JPO＆INPIT

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