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1. 发明专利

JP2004319742A Stencil mask substrate, stencil mask, and exposure method 有权
公开(公告)号：JP2004319742A
公开(公告)日：2004-11-11
申请号：JP2003111312
申请日：2003-04-16
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： EGUCHI HIDEYUKI , KUROSU TOSHIAKI , ITOU KOUJIROU , TAMURA AKIRA
IPC分类号： G03F1/20 , G03F7/20 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide a stencil mask blank and a stencil mask with stress optimally adjusted in the single-crystal silicon layer, in the manufacture of an SOI substrate-using stencil mask. SOLUTION: In this stencil mask substrate comprising a supporting substrate composed of a single-crystal silicon wafer, a single-crystal silicon layer for pattern transfer, and an intermediate insulating film formed in between the supporting substrate and the single-crystal silicon layer, the impurity concentration level in the single-crystal silicon layer is established on the basis of the thickness of the intermediate insulating film. The stencil mask is provided with the impurity as phosphorus, and is manufactured out of the stencil mask substrate. COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2002353124A MANUFACTURING METHOD OF MASK FOR CHARGED BEAM PROJECTION EXPOSURE 失效
公开(公告)号：JP2002353124A
公开(公告)日：2002-12-06
申请号：JP2001160102
申请日：2001-05-29
申请人： TOPPAN PRINTING CO LTD
发明人： TOMIYAMA KOZUE , TAMURA AKIRA , KONISHI TOSHIO , ITOU KOUJIROU , SASAKI HIRONOBU , EGUCHI HIDEYUKI
IPC分类号： G03F1/20 , G03F1/68 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a mask for charged beam projection exposure, for making the corner shape of the opening pattern of an aperture for drawing to approximate a design pattern as much as possible. SOLUTION: An auxiliary pattern 2 is added to a drawing opening pattern 1, when pattern drawing is carried out to a photosensitive layer by an electron beam in advance, thus obtaining an accurate opening pattern having an extremely small corner R value, when a base is subjected to etching. In this case, the auxiliary pattern 2 relieves the amount of change in the corner shape of an opening pattern due to side etching when a drawing aperture, having the opening pattern, is formed in the base comprising a silicon film.

3. 发明专利

JP2002050570A SUBSTRATE FOR TRANSFER MASK, TRANSFER MASK, METHOD FOR MANUFACTURING THE TRANSFER MASK, AND METHOD FOR EXPOSING CHARGED PARTICLE BEAM AND CHARGED PARTICLE BEAM EXPOSURE SYSTEM 失效
公开(公告)号：JP2002050570A
公开(公告)日：2002-02-15
申请号：JP2000374109
申请日：2000-12-08
申请人： TOPPAN PRINTING CO LTD
发明人： KONISHI TOSHIO , TAMURA AKIRA , ITOU KOUJIROU , SASAKI HIRONOBU , EGUCHI HIDEYUKI
IPC分类号： G03F1/20 , G03F7/20 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/308 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide a substrate for a transfer mask, capable of stably manufacturing the mask which does not have faults, without having to break the transfer pattern of an upper single-crystal silicon wafer in a step of manufacturing the mask by using the substrate for the mask, its transfer mask, and to provide a method for manufacturing the same. SOLUTION: The substrate for the transfer mask comprises single crystal silicon wafers on an upper part and a lower part of a silicon oxide film in the thickness range of 0.2 μm to 0.8 μm. The transfer mask uses the substrate for the mask. Further, the method for manufacturing the mask comprises a step of forming the transfer pattern on an upper single-crystal silicon wafer of the substrate for the mask, a step of forming an opening at a lower single- crystal silicon wafer, and a step of removing a silicon oxide film of the opening, at least after both the previous steps.

4. 发明专利

JP2007271952A Inspection method on stencil mask and device therefor 有权
标题翻译：膈肌检查方法及其设备
公开(公告)号：JP2007271952A
公开(公告)日：2007-10-18
申请号：JP2006097810
申请日：2006-03-31
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： ITOU KOUJIROU
IPC分类号： G01N21/956 , G03F1/20 , G03F1/84 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an automatic inspection method with high accuracy not by visual inspection, for detecting a defect on a stencil mask, in particular, detecting a foreign substance on the surface, and to provide an inspection device for obtaining a reference image for comparison inspection. SOLUTION: The method for inspecting a surface of a stencil mask to be used for charged particle beam exposure or the like includes an inspection step where a foreign matter or a defect on the surface of a membrane is inspected based on a first image of the surface of the membrane and on a second image of the back face of the membrane. The method for inspecting a stencil mask includes acquiring a differential image between the first image and the second image to inspect a foreign matter or a defect. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了不通过目视检查提供高精度的自动检查方法，用于检测模板掩模上的缺陷，特别是检测表面上的异物，并且提供一种用于获得用于比较检查的参考图像。解决方案：用于检查用于带电粒子束曝光等的模版掩模的表面的方法包括检查步骤，其中根据第一图像检查膜表面上的异物或缺陷的膜的表面和膜的背面的第二图像上。用于检查模板掩模的方法包括获取第一图像和第二图像之间的差分图像以检查异物或缺陷。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007266453A Electron ray exposure mask holder 有权
标题翻译：电子曝光面罩
公开(公告)号：JP2007266453A
公开(公告)日：2007-10-11
申请号：JP2006091622
申请日：2006-03-29
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： ITOU KOUJIROU , SUGIMURA HIROSHI
IPC分类号： H01L21/027 , G03F1/20 , G03F1/66 , G03F7/20 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide an electron ray exposure mask holder capable of mechanically, accurately and easily positioning an electron ray exposure mask. SOLUTION: The electron ray exposure mask holder 1 comprises a holder body 3 where a planar electron ray exposure mask 2 is mounted, a holder lid 5 for clamping the electron ray exposure mask 2 with the holder body 3, and a positioning part 6 for positioning the electron ray exposure mask 2 to the holder body 3. The positioning part 6 comprises a pair of positioning pins erected on the holder body 3, a pair of mask side positioning holes provided on the electron ray exposure mask 2 for fitting the pair of positioning pins, and a pair of holder side positioning holes provided on the holder lid 5. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够机械地，准确地且容易地定位电子射线曝光掩模的电子射线曝光掩模保持器。解决方案：电子射线曝光掩模保持器1包括安装有平面电子射线曝光掩模2的保持器主体3，用于将电子束曝光掩模2夹持在保持器主体3上的保持器盖5和定位部分定位部6包括竖立在保持器主体3上的一对定位销，设置在电子射线曝光掩模2上的一对掩模侧定位孔，用于安装电子射线曝光掩模2 一对定位销和一对设置在保持器盖5上的保持器侧定位孔。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2006046944A Method and apparatus for inspecting foreign matter of side wall of opening of stencil mask 有权
标题翻译：检查外墙开窗外墙外观的方法及装置
公开(公告)号：JP2006046944A
公开(公告)日：2006-02-16
申请号：JP2004224218
申请日：2004-07-30
申请人： Sony Corp , Toppan Printing Co Ltd , ソニー株式会社 , 凸版印刷株式会社
发明人： KUNIYA SHINJI , ITOU KOUJIROU , SUSA TAKASHI , YONEKURA ISAO , TAMURA AKIRA , IWASE KAZUYA , NOHAMA SHIYOUJI , MORIYA SHIGERU , KITAGAWA TETSUYA , NAKANO HIROYUKI
IPC分类号： G01N21/956 , G01B11/30 , G03F1/84 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an inspection method for effectively inspecting foreign matter bonded to the side wall of a support part or beam of a stencil mask by a simple method, and to provide an inspection device therefor. SOLUTION: In the method for inspecting the side wall (21) of the support frame (19) or beam (18) substantially vertically formed with respect to the surface of the stencil mark (10), an imaging means (41) is arranged so that the optical axis (38) thereof is inclined at a predetermined angle (θ) in the direction vertical to the surface of the stencil mask and a plurality of images are taken by changing the focal position of the imaging means with respect to the side wall of the support frame (19) or beam (18) while the whole focal image related to the sided wall of the support frame (19) or beam (18) is synthesized from a plurality of the images to be displayed by a display means (51). COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于通过简单的方法有效地检查粘合到模板掩模的支撑部分或梁的侧壁的异物的检查方法，并提供其检查装置。一种成像装置（41），用于检查支撑框架（19）的侧壁（21）或相对于模板标记（10）的表面基本垂直形成的梁（18）的方法，被布置成使得其光轴（38）在垂直于模板掩模的表面的方向上以预定角度（θ）倾斜，并且通过改变成像装置的焦点位置相对于与支撑框架（19）或光束（18）的双面壁相关的整个焦点图像从多个图像合成，以便通过一个或多个图像显示，支撑框架（19）或光束（18）的侧壁显示装置（51）。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005337728A Inspection device for foreign matter on surface of mask and inspection method using it 审中-公开
标题翻译：面罩表面外观检查装置及检查方法
公开(公告)号：JP2005337728A
公开(公告)日：2005-12-08
申请号：JP2004152978
申请日：2004-05-24
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： ITOU KOUJIROU , SUSA TAKASHI
IPC分类号： G01N21/956
摘要： PROBLEM TO BE SOLVED: To provide an inspection device for the foreign matter on the surface of a mask capable of easily inspecting only the foreign matter bonded to the surface of the mask for electron beam exposure.
SOLUTION: The inspection device for the foreign matter on the surface of the mask is constituted of a mask stage 10 for placing the mask 11 to move and rotate the same, a laser irradiation unit 20 for irradiating the surface of the mask 11 with a laser beam, a detection part 30 for detecting the scattered beam from the foreign matter and a judging/control unit 40 for taking in the signal from the detection part 30 not only to perform the judgment as the foreign matter but also to detect the coordinate position of the foreign matter and governing the control of the whole of the inspection device. The presence of the foreign matter on the surface of the mask 11 and the coordinate position of the foreign matter can be easily detected by irradiating the surface of the mask 11 with the laser beam.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了在掩模的表面上提供一种用于异物的检查装置，该检查装置能够容易地仅检查结合到掩模的表面的异物用于电子束曝光。＆lt; P＆gt;解决方案：掩模表面上的异物检查装置由用于放置掩模11移动和旋转的掩模台10，用于照射掩模11的表面的激光照射单元20 使用激光束，用于检测来自异物的散射光的检测部分30以及用于从检测部分30接收信号的判断/控制单元40不仅作为异物进行判断，而且还检测调查异物的坐标位置，控制整个检测装置的控制。通过用激光束照射掩模11的表面，可以容易地检测异物在掩模11的表面上的存在和异物的坐标位置。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2001255291A METHOD AND DEVICE FOR DETECTING DEFECT OF TRANSFER MASK 失效
公开(公告)号：JP2001255291A
公开(公告)日：2001-09-21
申请号：JP2000067056
申请日：2000-03-10
申请人： TOPPAN PRINTING CO LTD
发明人： ITOU KOUJIROU , KONISHI TOSHIO , SASAKI HIRONOBU , EGUCHI HIDEYUKI , TAMURA AKIRA
IPC分类号： G01B15/00 , G01B15/04 , G01N23/04 , G01N23/225 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for detecting defects of a transfer mask capable of detecting defects such as foreign matters and a projection on a pattern opening of the transfer mask. SOLUTION: The device for detecting defects of the transfer mask comprises an electron gun 10 for irradiating an electron beam, a stage 40 for driving and mounting the transfer mask 50, a passing electron detector 20 for detecting passing electrons of the transfer mask 50, a secondary electron detector 30 for detecting secondary electrons of the transferring mask 50, a defect extracting part 70 for taking the passing electron signal and a secondary electron signal obtained by the passing electron detector 20 and the secondary electron detector 30 and determining whether a defect exists by comparing with a reference signal, a display part 80 for displaying the defect as an image, and a device control part 60 for driving and controlling whole the detecting device and each unit.

9. 发明专利

JP2001255130A MASK DIMENSION MEASURING INSTRUMENT AND MEASURING METHOD USING THE INSTRUMENT 失效
公开(公告)号：JP2001255130A
公开(公告)日：2001-09-21
申请号：JP2000067065
申请日：2000-03-10
申请人： TOPPAN PRINTING CO LTD
发明人： ITOU KOUJIROU , TAMURA AKIRA , KONISHI TOSHIO , SASAKI HIRONOBU , EGUCHI HIDEYUKI
IPC分类号： G01B15/00 , G03F1/84 , G03F1/86 , H01J37/20 , H01J37/244 , H01J37/28 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a mask dimension measuring instrument, capable of measuring the dimension of the minute pattern or hole on a mask in a non destructive and non contact state with high accuracy and also capable of measuring a long dimension not entering a measuring visual field, and a measuring method using the same. SOLUTION: The mask dimension measuring instrument is equipped with a movable stage 3 for placing the mask 6 to be measured, measuring means 4, 7 for measuring the moving distance of the stage, an irradiation means for irradiating the mask to be measured with an electron beam and a measuring means for measuring the intensity of the secondary electrons or reflected electrons discharged from the mask to be measured.

10. 发明专利

JP2009071166A Inspecting method and inspecting device for mask for charged particle beam exposure, mask for charged particle beam exposure inspected by the same method, and manufacturing method thereof 审中-公开
标题翻译：检查方法和检查装置用于填充颗粒束的曝光，用相同方法检查的充电颗粒光束曝光的掩模及其制造方法
公开(公告)号：JP2009071166A
公开(公告)日：2009-04-02
申请号：JP2007239667
申请日：2007-09-14
申请人： Toppan Printing Co Ltd , 凸版印刷株式会社
发明人： ITOU KOUJIROU
IPC分类号： H01L21/027 , G01B11/26 , G03F1/20 , G03F1/84
摘要： PROBLEM TO BE SOLVED: To nondestructively inspect a tapered shape of a through pattern formed in a membrane of a mask for charged particle beam exposure.
SOLUTION: A backside 10b of the membrane 10 is irradiated with infrared light 17 to be transmitted, and an image 14A is obtained with transmitted light on the side of a top surface 10a by an infrared camera 5. The membrane 10 is formed of a silicon thin film etc., having optical transparency to the infrared light, so the image 14A includes an image 15A of a contour of a top-side opening of a through taper 4A and an image 16A of a contour of a backside opening. A pattern of a contrast waveform 18A of the image 14A varies depending upon whether the through taper 4A is a reverse taper such that a particle-beam incident-side opening is wider than an exit-side opening or a normal taper such that the particle-beam incident-side opening is not wider, so the tapered shape can be nondestructively inspected. Further, the angle of the taper can be obtained from the width between peaks of the contrast waveform 18A.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：非破坏性地检查形成在用于带电粒子束曝光的掩模的膜中的贯通图案的锥形形状。解决方案：用红外光17照射膜10的背面10b以便透射，并且通过红外照相机5在顶表面10a侧通过透射光获得图像14A.膜10形成具有对红外光的透光性的硅薄膜等，因此图像14A包括贯通锥形4A的顶侧开口的轮廓的图像15A和背面开口的轮廓的图像16A。图像14A的对比度波形18A的图案根据贯通锥体4A是否是反向锥形而变化，使得粒子束入射侧开口比出口侧开口或正常锥形宽，光束入射侧开口不宽，因此可以非破坏性地检查锥形。此外，可以从对比波形18A的峰值之间的宽度获得锥度的角度。版权所有（C）2009，JPO＆INPIT

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