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1. 发明专利

JP2003297802A Substrate treatment device and substrate treatment method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2003297802A
公开(公告)日：2003-10-17
申请号：JP2002094201
申请日：2002-03-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KONISHI NOBUO , SHINDO NAOKI
IPC分类号： G03F7/30 , H01L21/027 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment device and a substrate treatment method. SOLUTION: In this method for etching a substrate by using an etchant E supplied to the surface WS of a substrate W, the etchant E contains a protective component Eb for protecting the surface WS from being etched, with the protective component Eb modified into an etching component Ee for etching the surface WS upon irradiation by light L. The protective component Eb is supplied to the surface WS by supplying the etchent E to the surface WS, and the protective component Eb is modified into the etching component Ee upon irradiation by the light L, thus enabling the etching of the surface WS. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种基板处理装置和基板处理方法。解决方案：在通过使用提供给衬底W的表面WS的蚀刻剂E来蚀刻衬底的方法中，蚀刻剂E包含用于保护表面WS不被蚀刻的保护组分Eb，保护组分Eb被修饰成为用于在被光L照射时蚀刻表面WS的蚀刻部分Ee。通过向表面WS提供等离子体将保护成分Eb供给到表面WS，并且保护成分Eb在照射时被修改为蚀刻成分Ee 通过光L，从而能够蚀刻表面WS。版权所有（C）2004，JPO

2. 发明专利

JP2001085294A DEVELOPING DEVICE 失效
公开(公告)号：JP2001085294A
公开(公告)日：2001-03-30
申请号：JP25587099
申请日：1999-09-09
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , TOSHIMA TAKAYUKI
IPC分类号： H01L21/027 , G03F7/30
摘要： PROBLEM TO BE SOLVED: To provide a developing device capable of performing excellent development by solving various problems produced when a developer is placed on a wafer by a scanning method. SOLUTION: This developing device includes a wafer holding part 2 for horizontally holding a wafer 1 and a developer supply unit 13 moving in a horizontal direction and supplying a developer on the wafer 1. The developer supply unit 13 is a developing apparatus including: a developer guide plate 15 which is held in a state where its bottom end is opposed to the wafer 1 with a predetermined gap therebetween and whose one surface is held with in opposition to the direction in which the developer supply unit 13 moves; and a developer supply system 25 which supplies the developer to the top portion of the one surface of the developer guide plate 15 to make the developer flow along the developer guide plate 15 to supply the developer to the wafer 1 from the bottom end of the developer guide plate 15 to the wafer 1.

3. 发明专利

JPH11238714A METHOD OF CLEANING 失效
公开(公告)号：JPH11238714A
公开(公告)日：1999-08-31
申请号：JP5600298
申请日：1998-02-20
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , HIROSE KEIZO , SEKIGUCHI KENJI
IPC分类号： B08B3/02 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To eliminate variations in cleaning on an in-plane of a wafer by varying the rotating revolutions of a wafer or a cleaning brush on the plane face of the wafer. SOLUTION: A wafer (W) is rotated by a substrate holding part 2 in a horizontal direction. First and second brushes 41 and 61 are put in contact with the main and rear face of the wafer (W). The brushes 41 and 61 are rotated around a vertical axis at given number of revolutions, and at the same time, the brushes 41 and 61 are moved from the center to the boundary edge part of the wafer (W). The wafer (W) is rotated at a rpm, where a is 50 to 1,000, for cleaning the central part thereof, while the wafer (W) for example is rotated at a/10 rpm for cleaning the boundary edge part of the wafer (W). In this way the circumferential speed of cleaning is made to vary for each cleaning position, so that the wafer speed with respect to the cleaning brushes 41 and 61 becomes constant, thereby making the cleaning performance for the wafer (W) almost uniform.

4. 发明专利

JPH10321493A FORMATION OF RESIST FILM AND SUBSTRATE TREATING DEVICE 失效
公开(公告)号：JPH10321493A
公开(公告)日：1998-12-04
申请号：JP14455297
申请日：1997-05-20
申请人： TOKYO ELECTRON LTD
发明人： TOSHIMA TAKAYUKI , KONISHI NOBUO
IPC分类号： H01L21/027 , G03F7/16
摘要： PROBLEM TO BE SOLVED: To uniformly form a resist film on the surface of a substrate, even when the surface has recessing and projecting sections or steps. SOLUTION: A resist film 3 is applied to top sections 1 and bottom sections 2 forming recessing and projecting sections on the surface of a wafer, so that the thickness of the resist film may become thicker than a desired value. Then, a decomposed layer 3a having the desired thickness is formed on the top sections 1 and bottom sections by simultaneously heating the lower surface side of the wafer W and cooling the upper surface side of the wafer W while the resist film 3 is in a wet state. When the nondecomposed layer 3b of the resist layer 3 is removed thereafter, a resist film having the desired thickness is formed uniformly on the top and bottom sections 1 and 2.

5. 发明专利

JPH09213621A COATING FILM FORMING METHOD AND ITS EQUIPMENT 失效
公开(公告)号：JPH09213621A
公开(公告)日：1997-08-15
申请号：JP3902696
申请日：1996-02-01
申请人： TOKYO ELECTRON LTD
发明人： HASEBE KEIZO , NISHIKIDO SHUICHI , KONISHI NOBUO
IPC分类号： G03F7/16 , B05C11/08 , B05D1/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce the amount of using coating liquid, and make the thickness of a coating film uniform. SOLUTION: Solvent B of resist liquid A is supplied to the surface of a semiconductor wafer W which is horizontally rotated by a spin chuck 51, from a solvent supply nozzle 60. The solvent B is diffused on the whole surface of the semiconductor wafer W, and the resist liquid is dripped on the wafer W surface from a resist liquid supply nozzle 61. When the resist liquid is made to follow the solvent and diffused, a process space 57 is isolated from the outside air, and mist type solvent is supplied to the inside of the process space 57. Thereby evaporation of the solvent in the resist liquid is restricted, and the resist liquid is made to uniformly reach the peripheral part of the semiconductor wafer W, so that the amount of using the resist liquid can be reduced.

6. 发明专利

JPH0497831A JOINTING STRUCTURE OF HOSE 失效
公开(公告)号：JPH0497831A
公开(公告)日：1992-03-30
申请号：JP21683590
申请日：1990-08-16
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , ORII TAKEHIKO
IPC分类号： G03F7/16 , B29C65/68 , F16L33/22 , H01L21/027 , H01L21/30
摘要： PURPOSE:To apply a component force to a hose in a press-contacting direction, prevent smear and oil leak and improve yield of product, by a method wherein the side face opposite to the end face side of a hose at a swollen out part is made into a slope, end faces of the hoses are butted against each other, which is covered with a heat- shrinkable tube. CONSTITUTION:When a heat-shrinkable tube 48 is heated and shrunk, the tube 48 is stuck to an external circumference of a joint part of a hose 46 and coming-off of the hose 46 is prevented due to existence of a swollen-out part 50. Then when shrinkage force toward a shaft center direction A of the hose 46 of the heat-shrinkable tube 48 is applied to a slope 54 of the swollen-out part 50, the slope 54 is caused to generate a component force B working the shrinkage force of the slope 54 in a press-contacting direction of the mutual end faces and the end faces 52 are stuck close to each other. The press-contacting force between the end faces 52 is concentrated and a degree of adhesion is improved, smear and oil leak of a liquid resist are prevented reliably, by a method wherein an annular protrusion formed on the one side end face 52 is caused to abut with the other end face 52. Then deterioration of the liquid resist by a well and adhesion by the smear are eliminated, yield of product is improved and a reduction of a production cost becomes possible.

7. 发明专利

JP2004327537A Method, equipment, and system for substrate processing 有权
标题翻译：用于基板处理的方法，设备和系统
公开(公告)号：JP2004327537A
公开(公告)日：2004-11-18
申请号：JP2003117130
申请日：2003-04-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： ONO HIROKI , KONISHI NOBUO , ORII TAKEHIKO
IPC分类号： G03F7/42 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method of processing a substrate which is capable of removing a resist film hard of detachment without causing damage to the substrate or a film serving as the underlying material of the resist film.
SOLUTION: A wafer W is equipped with a resist cured film 79 formed through an ion implantation process, and the wafer W is subjected to processing so as to expose the resist cured film 79 to water vapor kept at a prescribed temperature, whereby the the resist cured film 79 is popped out (step 4). By this setup, craters 88 are formed in the cured layer 79a of the resist cured film 79, and uncured parts 79b are exposed inside the cured layer 79a. The wafer W is dried out (step 5), then the wafer W is processed with processing gas containing ozone and water vapor, whereby the uncured resist parts 79b are turned water-soluble (step 6). Thereafter, the wafer W is rinsed with water to remove the resist cured film 79 from it (step 7).
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种处理基板的方法，该基板能够在不损害基板或用作抗蚀剂膜的下层材料的膜的情况下去除强度分离的抗蚀剂膜。解决方案：晶片W配备有通过离子注入工艺形成的抗蚀剂固化膜79，并且对晶片W进行加工以将抗蚀剂固化膜79暴露于保持在规定温度的水蒸气，由此弹出抗蚀剂固化膜79（步骤4）。通过该设置，在抗蚀剂固化膜79的固化层79a中形成有凹坑88，未固化部79b暴露在固化层79a的内部。将晶片W干燥（步骤5），然后用含有臭氧和水蒸汽的处理气体处理晶片W，由此将未固化的抗蚀剂部分79b转变为水溶性（步骤6）。此后，用水冲洗晶片W以从其中除去抗蚀剂固化膜79（步骤7）。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2002370059A Film-forming method and film-forming device 有权
标题翻译：薄膜成型方法和成膜装置
公开(公告)号：JP2002370059A
公开(公告)日：2002-12-24
申请号：JP2002032039
申请日：2002-02-08
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KONISHI NOBUO , IWASHITA MITSUAKI , ONO HIROKI , KAWAMURA SHIGERU , SUGIURA MASAHITO
IPC分类号： B05D1/38 , B01J19/00 , B01J19/08 , B01J19/10 , B01J19/12 , B05C9/10 , B05C9/12 , B05C11/08 , B05D1/40 , B05D3/04 , H01L21/316 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a film-forming method and a film-forming device capable of enhancing an adhering property between films such as layer-to-layer insulation films having a low dielectric constant or between the layer-to-layer insulation films and other adjacent films.
SOLUTION: The film-forming method is provided with a step for applying a reforming treatment onto a surface of a porous or non-porous low dielectric constant insulation film 46 formed on a substrate; and a step for forming the insulation film 47, as an etching mask or a CMP stopper, on the surface of the porous or non-porous low dielectric constant insulation film 46 applied with the reforming treatment. A surface roughness of the porous or non-porous low dielectric constant insulation film 46 is increased for example, by irradiating plasma as the reforming treatment. Thereby, the adhering property between the films each other or between the layer-to-layer insulation films and other adjacent films each other can be enhanced by an anchor effect.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供能够提高诸如具有低介电常数的层间绝缘膜之间的膜之间或层间绝缘膜之间的粘附性的成膜方法和成膜装置和其他相邻的胶片。解决方案：成膜方法具有将重整处理施加到形成在基板上的多孔或无孔低介电常数绝缘膜46的表面上的步骤; 以及在施加了重整处理的多孔或无孔低介电常数绝缘膜46的表面上形成作为蚀刻掩模或CMP阻挡层的绝缘膜47的步骤。多孔或非多孔低介电常数绝缘膜46的表面粗糙度例如通过照射等离子体作为重整处理而增加。由此，可以通过锚效应来提高膜之间彼此之间或层间绝缘膜与其它相邻膜之间的粘合性。

9. 发明专利

JPH11224849A DEVELOPMENT PROCESSING METHOD 失效
公开(公告)号：JPH11224849A
公开(公告)日：1999-08-17
申请号：JP3814798
申请日：1998-02-04
申请人： TOKYO ELECTRON LTD
发明人： TOSHIMA TAKAYUKI , KONISHI NOBUO
IPC分类号： G03F7/30 , G03F7/32 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a uniform developing process in a substrate surface, when a developer liquid supplied to the substrate surface is developed. SOLUTION: An electrolysis unit 3 is provided on the surface of a wafer W held by a wafer-holding part 21, and 1.19-1.59 vol.% TMAH aqueous solution (developer solution), for example, is supplied from the upper side of the unit. When electrolysis is started thereafter, a negative ion of the developer solution moves from an anode chamber 33 far from the wafer W to a cathode chamber 34 near the wafer W via an ion-exchange membrane 32 of the unit 3 to raise concentration alkaline component of the developer liquid in the cathode chamber 34, so that the concentration of TMAH aqueous solution of the cathode chamber 34 comes to about 2.38 vol.% for starting development. Since development does not proceed, when the developer liquid is supplied to the surface of wafer W while it proceeds, when the concentration of developer liquid is raised by electrolysis, uniform developing process is obtained even if there is deviation in time at supplying of developer liquid.

10. 发明专利

JPH11176789A WASHING SYSTEM 失效
公开(公告)号：JPH11176789A
公开(公告)日：1999-07-02
申请号：JP36355197
申请日：1997-12-15
申请人： TOKYO ELECTRON LTD
发明人： KONISHI NOBUO , HIROSE KEIZO , SEKIGUCHI KENJI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To make the overall cleaning system small and to reduce the cleaning processing time when the front side and the rear side of a substrate such as a semiconductor wafer are cleaned. SOLUTION: A circumferential ridge of a wafer W is supported by an upper support formed to an upper rotary body 2 and a lower support formed to a lower rotary body 3 by pressing the wafer W from both the upper and the lower sides, the torque of a motor 44 placed at the outside of the lower rotary body 3 is delivered the lower rotary body 3 via a belt 45 for driving the rotary bodies 2, 3 around a vertical shaft. Cleaning brushes 51, 52 that clean the front side and the rear side of the wafer W and nozzles 61, 62 that supply a cleaning liquid to the front side and the rear side of the wafer W are provided. Sliding the wafer W and the cleaning brushes 51, 52 at the same time clean both the front side and the rear side of the wafer W. Since two cleaning parts and inverting parts required for a conventional system becomes unnecessary the overall system is made small in size and the number of processes of the system is reduced, so that the processing time is shortened.

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