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1. 发明专利

JP2014017354A Deposition method 审中-公开
标题翻译：沉积方法
公开(公告)号：JP2014017354A
公开(公告)日：2014-01-30
申请号：JP2012153407
申请日：2012-07-09
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IKEGAWA HIROAKI , UENISHI MASAHIKO , OGAWA ATSUSHI
IPC分类号： H01L21/316 , C23C16/455 , H01L21/31
CPC分类号： H01L21/76 , C23C16/40 , C23C16/45531 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/02274 , H01L21/0228 , H01L21/67748 , H01L21/68764 , H01L21/68771
摘要： PROBLEM TO BE SOLVED: To improve composition controllability of a metallic compound.SOLUTION: A deposition method comprises: a first deposition step of depositing a first metal compound film by performing a cycle of exposing a substrate to a first material gas containing a first metal and exposing the substrate to a reaction gas that reacts with the first material gas one and more times; an adsorption step of adsorbing the first metal to the first metallic compound film by exposing the substrate on which the first metallic compound film is deposited, to the first material gas; and a second deposition step of depositing a second metallic compound film on the substrate by performing a cycle of exposing the substrate to which the first metal is adsorbed, to a second material gas containing a second metal and exposing the substrate to a reaction gas that reacts with the second material gas one and more times.
摘要翻译：要解决的问题：提高金属化合物的组成可控性。解决方案：沉积方法包括：第一沉积步骤，通过执行将基底暴露于含有第一金属的第一材料气体的循环来沉积第一金属化合物膜;以及将基板暴露于与第一原料气体反应一次或多次的反应气体; 吸附步骤，通过将沉积有第一金属化合物膜的基板暴露于第一材料气体而将第一金属吸附到第一金属化合物膜上; 以及第二沉积步骤，通过执行使第一金属被吸附的基底曝光的循环，将第二金属化合物膜沉积在第二金属化合物膜上，从而将第二材料气体暴露于反应气体，反应气体与第二材料气一次多次。

2. 发明专利

JP2010103497A Mask pattern forming method, fine pattern forming method, and film deposition apparatus 有权
标题翻译：掩模图形成方法，精细图案形成方法和薄膜沉积装置
公开(公告)号：JP2010103497A
公开(公告)日：2010-05-06
申请号：JP2009206443
申请日：2009-09-07
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , NAKAJIMA SHIGERU , OGAWA ATSUSHI , MURAKAMI HIRONORI
IPC分类号： H01L21/3065 , G03F7/40 , H01L21/027
CPC分类号： H01L21/027 , C23C16/02 , C23C16/402 , C23C16/403 , C23C16/45536 , G03F7/40 , H01L21/02164 , H01L21/02178 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/0274 , H01L21/0337 , H01L21/0338 , H01L21/31138 , H01L21/31144 , H01L21/31608 , H01L21/31616 , H01L21/32139 , H01L21/76816
摘要： PROBLEM TO BE SOLVED: To provide a mask pattern forming method and a fine pattern forming method wherein a process for slimming a resist pattern is eliminated in forming a fine pattern by forming a silicon oxide film on a pattern organic film, and the cost of the process is reduced. SOLUTION: There are provided a process S11 for thin film formation, a process S12 for resist film formation over the thin film, a pattern forming process S13 for resist film processing into resist patterns having a predetermined pitch by using a photolithography technique, a shape forming process S14 for forming the shape of the resist patterns, and a film deposition process S15 for oxide film formation on the thin film and the resist patterns whose shape is formed in the shape forming process by supplying a source gas and an oxygen radical or an oxygen-containing gas. The shape forming process S14 and the film deposition process S15 are continuously performed in a film deposition apparatus for forming the oxide film. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决问题：为了提供掩模图案形成方法和精细图案形成方法，其中通过在图案有机膜上形成氧化硅膜，在形成精细图案时消除了减少抗蚀剂图案的工艺，并且流程成本降低。提供了一种用于薄膜形成的工艺S11，用于在薄膜上形成抗蚀膜的工艺S12，通过使用光刻技术将具有预定间距的抗蚀剂图案进行抗蚀剂膜处理的图案形成工艺S13，用于形成抗蚀剂图案的形状的形状形成处理S14以及用于在薄膜上形成氧化膜的膜沉积工艺S15以及通过提供源气体和氧自由基在形状形成工艺中形成的抗蚀剂图案或含氧气体。在用于形成氧化膜的成膜装置中连续进行形状形成处理S14和成膜处理S15。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008103642A Oxidation apparatus and oxidation method of article to be treated, and storage medium 有权
标题翻译：要处理的物品的氧化装置和氧化方法和储存介质
公开(公告)号：JP2008103642A
公开(公告)日：2008-05-01
申请号：JP2006286909
申请日：2006-10-20
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , FUJITA TAKEHIKO , NAKAJIMA SHIGERU , OGAWA ATSUSHI
IPC分类号： H01L21/31 , H01L21/316
CPC分类号： H01L21/67109 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： PROBLEM TO BE SOLVED: To provide an oxidation apparatus of an article to be treated capable of causing the operation to be easy without the necessity to perform a cumbersome adjustment work of an amount of a supplied gas even when the surface of the article to be treated is varied.
SOLUTION: An oxidation apparatus of an article to be treated comprises: a treating vessel 34 for subjecting an article to be treated W to oxidation treatment; a supporting means 42 for supporting the article to be treated; a heating means 82; a vacuum exhaust system 84; an oxidative gas supply system 58 for supplying an oxidative gas; and a reductive gas supply system 60 for supplying a reductive gas. In the apparatus, the oxidative gas supply system is provided along the length direction of the treating vessel and has an oxidative gas nozzle 62 in which a plurality of gas jets 62A are formed; the reductive gas supply system is provided along the length direction of the treating vessel and has a reductive gas nozzle 64 in which a plurality of gas jets 64A are formed; on the side wall of the treating vessel, an exhaust opening part is provided along the length direction of the treating vessel to communicate the inside of the vessel with the vacuum exhaust system; and the article to be treated is oxidized using an oxygen active species and a hydroxyl group active species which are generated by reacting the oxidative gas and reductive gas which are supplied into the inside of the treating vessel.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种待处理物品的氧化装置，其能够使操作变得容易，而不需要进行一定量的供应气体的繁琐的调整工作，即使当物品的表面待处理是多样的。解决方案：待处理制品的氧化装置包括：处理容器34，用于对被处理物品W进行氧化处理; 用于支撑待处理物品的支撑装置42; 加热装置82; 真空排气系统84; 用于供给氧化气体的氧化气体供给系统58; 以及用于供给还原气体的还原气体供给系统60。在该装置中，氧化气体供给系统沿着处理容器的长度方向设置，并具有形成有多个气体射流62A的氧化性气体喷嘴62，还原气体供给系统沿着处理容器的长度方向设置，并具有形成有多个气体射流64A的还原气体喷嘴64; 在处理容器的侧壁上，沿着处理容器的长度方向设置排气口部分，以将容器的内部与真空排气系统连通; 并且使用通过使供给到处理容器内部的氧化性气体和还原性气体反应而产生的氧活性物质和羟基活性物质氧化被处理物。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008060456A Workpiece oxidizing method, oxidizing apparatus, and memory medium 有权
标题翻译：工作氧化方法，氧化装置和记忆介质
公开(公告)号：JP2008060456A
公开(公告)日：2008-03-13
申请号：JP2006237559
申请日：2006-09-01
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： FUJITA TAKEHIKO , OGAWA ATSUSHI , NAKAJIMA SHIGERU , HASEBE KAZUHIDE
IPC分类号： H01L21/316
CPC分类号： C30B33/005 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01L21/02238 , H01L21/02252 , H01L21/31662
摘要： PROBLEM TO BE SOLVED: To provide a workpiece oxidizing method of supplying an oxidizing gas or a reducing gas activated by an activating means to a process container to suppress a wide decrease in a radical consumption rate without increasing gas supply.
SOLUTION: According to the workpiece oxidizing method, the workpiece W is stored in the process container 4 ready for vacuumizing, and a process gas is supplied into the process container 4 to oxidize a surface of the workpiece W. An oxidizing gas and a reducing gas are used as the process gas. At least either of the oxidizing gas and the reducing gas is activated by an activating means 52 to generate a radical, and both gases are caused to react with each other to generate an oxygen radial and a hydroxy group radical, and the surface of the workpiece W is oxidized with these radicals.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种工件氧化方法，其将氧化气体或由活化装置活化的还原气体供给到处理容器，以抑制基本消耗速率的大幅度降低而不增加气体供应。解决方案：根据工件氧化方法，将工件W储存在处理容器4中以准备好抽真空，并且将处理气体供应到处理容器4中以氧化工件W的表面。氧化气体和使用还原气体作为处理气体。氧化气体和还原性气体中的至少一种被活化装置52激活以产生自由基，并且使两种气体彼此反应以产生氧离子和羟基自由基，并且工件的表面 W被这些基团氧化。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007042823A Deposition method, deposition apparatus, and storage medium 有权
标题翻译：沉积方法，沉积装置和储存介质
公开(公告)号：JP2007042823A
公开(公告)日：2007-02-15
申请号：JP2005224741
申请日：2005-08-02
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , OKADA MITSUHIRO , CHOU PAO-HWA , OGAWA ATSUSHI , KIN SAIKO , FUKUSHIMA KOHEI , TAKAHASHI TOSHIKI , SATO JUN
IPC分类号： H01L21/31 , C23C16/44
CPC分类号： C23C16/4412 , C23C16/345 , C23C16/452 , C23C16/45527 , C23C16/45546 , C23C16/45578 , H01L21/0217 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： PROBLEM TO BE SOLVED: To provide a deposition method capable of preventing the occurrence of particles and that of inner leakage without decreasing throughput.
SOLUTION: In the deposition method, a thin film is formed by using a deposition apparatus that exhausts atmosphere in a processing container and supplies feed gas and reactive gas into the processing container by an evacuation system 82 that holds a workpiece W in the cylindrical processing container 14 and halfway interposes a valve mechanism 86 capable of arbitrarily setting an opening including full opening and full closing. In the deposition method, the feed gas and the reactive gas are alternately supplied into the processing container, and the valve opening of a valve mechanism when supplying the feed gas is set smaller than that when no feed gas is supplied excluding the fully-closed state, thus preventing the occurrence of particles without decreasing throughput.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止颗粒发生和内泄漏而不降低生产量的沉积方法。解决方案：在沉积方法中，通过使用排出处理容器中的气氛并将进料气体和反应性气体通过将工件W保持在该处理容器中的抽气系统82向进料容器供给而形成薄膜圆柱形处理容器14，并且中途插入能够任意设定包括全开和全关的开口的阀机构86。在沉积方法中，进料气体和反应气体交替地供给到处理容器中，并且当供给进料气体时阀机构的阀开度设定为小于不包括进料气体不包括完全关闭状态，从而防止颗粒的产生而不降低生产量。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2004172409A Method for cleaning reaction vessel and film formation device 审中-公开
公开(公告)号：JP2004172409A
公开(公告)日：2004-06-17
申请号：JP2002337082
申请日：2002-11-20
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , OKADA MITSUHIRO , ENDO ATSUSHI , OGAWA ATSUSHI
IPC分类号： C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To prevent the entry of fluorine into a thin film during film formation of a wafer after the thin film adhered to a reaction vessel is cleaned by a cleaning gas containing fluorine in a film formation device.
SOLUTION: While a cleaning gas is supplied into a reaction vessel, a temperature in the reaction vessel is always detected. The temperature in the reaction vessel before the cleaning gas is supplied is set to T0, and when a temperature detection value reaches a peak value Tp or until it becomes T0+0.5 (Tp-T0), the supply of the cleaning gas is stopped. This method may be conducted depending on the comparison of the temperature detection value with a preset value, however, a time from beginning of the supply of the cleaning gas to arrival at the preset temperature is obtained beforehand, and the supply of the cleaning gas may be stopped by controlling the elapsed time.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2017118035A 成膜方法及び成膜装置审中-公开
公开(公告)号：JP2017118035A
公开(公告)日：2017-06-29
申请号：JP2015254324
申请日：2015-12-25
申请人：東京エレクトロン株式会社 , Tokyo Electron Ltd
发明人： FUKIAGE NORIAKI , KARAKAWA TAKAYUKI , KURIBAYASHI AKIHIRO , OGAWA ATSUSHI
IPC分类号： H01L21/318 , C23C16/42 , C23C16/452 , C23C16/455 , C23C16/50 , H01L21/31
CPC分类号： H01L21/02274 , C23C16/0209 , C23C16/345 , C23C16/4412 , C23C16/45542 , C23C16/45544 , C23C16/45551 , C23C16/45563 , H01L21/0217 , H01L21/02211 , H01L21/0228 , H01L21/68764 , H01L21/68771
摘要：【課題】基板の表面へのダメージを抑えると共に、基板の表面に対して高い被覆性を有するようにシリコン窒化膜を成膜する技術を提供する。【解決手段】基板Wにシリコン原料のガスを供給して吸着させる第1の工程と、次に、アンモニアガスをプラズマ化されない状態で基板Wに供給して物理吸着させる第2の工程と、次に、プラズマ形成用ガスをプラズマ化して得られた活性種66を基板Wに供給し、基板Wに吸着したアンモニアと前記シリコン原料とを反応させて反応生成物の層を形成する第3の工程と、を備える。第1の工程と、第2の工程と、第3の工程とからなるサイクルを複数回繰り返し、反応生成物の層を堆積させてシリコン窒化膜を成膜する工程と、を備える。【選択図】図9

8. 发明专利

JP2014140018A Deposition method 有权
标题翻译：沉积方法
公开(公告)号：JP2014140018A
公开(公告)日：2014-07-31
申请号：JP2013237216
申请日：2013-11-15
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IKEGAWA HIROAKI , UENISHI MASAHIKO , TAKAHASHI HIROSUKE , OI MASATO , OGAWA ATSUSHI
IPC分类号： H01L21/316 , C23C16/34 , C23C16/40 , C23C16/455 , H01L21/31 , H01L21/318
CPC分类号： H01L21/0228 , C23C16/45551 , C23C16/4584 , H01L21/02148 , H01L21/02164 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/68764 , H01L21/68771
摘要： PROBLEM TO BE SOLVED: To provide a deposition method which can uniformly stack an oxide film or a nitride film of a laminated structure on a plurality of substrates.SOLUTION: A deposition method using a deposition apparatus including a rotary table capable of loading a plurality of substrates, a first gas supply part and a second gas supply part comprises: a first step of supplying an oxidation gas from the first and second gas supply parts to rotate the rotary table; a second step of supplying a first reaction gas containing a first element from the first gas supply part and supplying an oxidation gas from the second gas supply part to rotate the rotary table to deposit a first oxide film containing the first element on a substrate; a third step of supplying the oxidation gas from the first and second gas supply parts to rotate the rotary table; and a fourth step of supplying a second reaction gas containing a second element from the first gas supply par and supplying the oxidation gas from the second gas supply part to rotate the rotary table to deposit a second oxide film containing the second element on the substrate.
摘要翻译：要解决的问题：提供一种能够在多个基板上均匀地堆叠层叠结构的氧化物膜或氮化物膜的沉积方法。解决方案：使用包括能够加载多个基板的旋转台的沉积设备的沉积方法基板，第一气体供应部分和第二气体供应部分包括：第一步骤，从第一和第二气体供应部分供应氧化气体以旋转旋转台; 第二步骤，从第一气体供应部分供应含有第一元素的第一反应气体，并从第二气体供应部分供应氧化气体以旋转旋转台，以将含有第一元素的第一氧化膜沉积在基底上; 第三步骤，从第一和第二气体供应部分提供氧化气体以旋转旋转台; 以及第四步骤，从第一气体供应装置供应含有第二元素的第二反应气体，并从第二气体供应部分供应氧化气体，以旋转旋转台，以将含有第二元素的第二氧化物膜沉积在基板上。

9. 发明专利

JP2008109091A Method, apparatus and program of forming silicon oxide film 有权
标题翻译：方法，形成硅氧烷膜的方法和程序
公开(公告)号：JP2008109091A
公开(公告)日：2008-05-08
申请号：JP2007215809
申请日：2007-08-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HASEBE KAZUHIDE , NAKAJIMA SHIGERU , OGAWA ATSUSHI , FUJITA TAKEHIKO
IPC分类号： H01L21/316 , C23C16/34 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a method, an apparatus and a program of forming a silicon oxide film, which can form a good-quality silicon oxide film at a low temperature.
SOLUTION: An Si source is first supplied into a reaction tube 2 to allow Si to be adsorb on the surface of a semiconductor wafer W. Subsequently, oxygen radicals are supplied into the reaction tube 2 to oxidize the adsorbed Si and form a silicon oxide film on the semiconductor wafer W. This processing is repeated a plurality of times, thereby forming a silicon oxide film having a desired thickness.
COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2014107344A Deposition method, program for the deposition method, recording medium storing the program, deposition device 有权
标题翻译：沉积方法，沉积方法的程序，记录程序的记录介质，沉积装置
公开(公告)号：JP2014107344A
公开(公告)日：2014-06-09
申请号：JP2012257651
申请日：2012-11-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IKEGAWA HIROAKI , UENISHI MASAHIKO , TAKAHASHI HIROSUKE , SASAKI MASARU , OGAWA ATSUSHI
IPC分类号： H01L21/31 , C23C16/44 , H01L21/316
CPC分类号： C23C16/52 , C23C16/40 , C23C16/45531 , C23C16/45551
摘要： PROBLEM TO BE SOLVED: To provide a deposition method and a deposition device, capable of improving controllability and uniformity of deposition between a plurality of substrates and in a surface of a substrate.SOLUTION: A deposition device comprises: a first gas supply unit arranged in a first processing region above a rotary table; a second gas supply unit arranged in a second processing region separated from the first processing region; a separation gas supply unit provided between the first processing region and the second processing region; and a separation region in which a narrow space is formed which guides the separation gas supplied from the separation gas supply unit to the first processing region and the second processing region. A deposition method includes: a first reaction step of rotating the rotary table to a first angle; a second reaction step of rotating the rotary table to a second angle; a third reaction step of rotating the rotary table to a third angle; and a fourth reaction step of rotating the rotary table to a fourth angle. The sum of the first angle, the second angle, the third angle, and the fourth angle is not an integral multiple of 360 degrees.
摘要翻译：要解决的问题：提供能够提高多个基板之间和基板表面中的沉积的可控性和均匀性的沉积方法和沉积装置。解决方案：沉积装置包括：第一气体供应单元，其布置在旋转台上方的第一处理区域; 布置在与所述第一处理区域分离的第二处理区域中的第二气体供给单元; 设置在所述第一处理区域和所述第二处理区域之间的分离气体供给单元; 以及分离区域，其中形成有将从分离气体供给单元供给的分离气体引导到第一处理区域和第二处理区域的狭窄空间。沉积方法包括：将旋转台旋转到第一角度的第一反应步骤; 将所述旋转台旋转到第二角度的第二反应步骤; 将旋转台旋转到第三角度的第三反应步骤; 以及将旋转台旋转到第四角度的第四反应步骤。第一角度，第二角度，第三角度和第四角度之和不是360度的整数倍。

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