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1. 发明专利

JP2005047004A Composite high-hardness material for tool 有权
标题翻译：复合材料高硬度材料
公开(公告)号：JP2005047004A
公开(公告)日：2005-02-24
申请号：JP2004265400
申请日：2004-09-13
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： KUKINO AKIRA , NAKAI TETSUO , GOTO MITSUHIRO , YOSHIOKA TAKESHI , SETOYAMA MAKOTO
IPC分类号： B23B27/14 , B23B27/20 , C04B35/52 , C04B35/583 , C04B41/87 , C04B41/89 , C23C14/06
摘要： PROBLEM TO BE SOLVED: To provide a composite high-hardness material for tools having a base material consisting of a CBN sintered body containing, by volume, 20% cubic boron nitride, or a base material consisting of a diamond sintered body containing 40% diamond. SOLUTION: At least one hard heat-resistant film mainly consisting of at least one kind of element selected among C, N and O, Ti and Al is deposited on a part related to at least cutting. The ideal composite high-hardness material for tools has both the high hardness and the high strength (several times higher than that of cemented carbide) of the CBN sintered body or the diamond sintered body and the excellent wear resistance of the hard and heat-resistant film, and demonstrates considerably long lifetime compared with a conventional tool when used in cutting of hardened steel, rough turning of cast iron, common grinding of cast iron with aluminum alloy, etc. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于工具的复合高硬度材料，其具有由包含体积为20％立方氮化硼的CBN烧结体或由金刚石烧结体组成的基体材料构成的基材，所述基体材料包含 40％钻石。解决方案：至少一种主要由选自C，N和O，Ti和Al中的至少一种元素组成的硬质耐热膜沉积在与至少切割有关的部分上。 CBN烧结体或金刚石烧结体的理想复合高硬度材料具有高硬度和高强度（比硬质合金高几倍）的优点，耐硬耐热性优异薄膜，与常规工具相比寿命长，当用于硬化钢切割，铸铁粗磨，铝合金铸铁普通研磨等时。（C）2005，JPO＆NCIPI

2. 发明专利

JPS5935093A Vapor-phase synthesis of diamond 失效
标题翻译：金刚石的蒸汽相合成
公开(公告)号：JPS5935093A
公开(公告)日：1984-02-25
申请号：JP14668482
申请日：1982-08-23
申请人： Sumitomo Electric Ind Ltd
发明人： YOSHIOKA TAKESHI , DOI AKIRA , FUJIMORI NAOHARU
IPC分类号： C30B25/02 , C30B29/04
CPC分类号： C30B25/02 , C30B29/04
摘要： PURPOSE:To carry out the CVD process for the vapor-phase syntyesis of diamond, in high efficiency, by passing a mixture of reaction gas and carrier gas through an ionization zone. CONSTITUTION:A substate is placed in a vacuum chamber, and heated at 400- 1,000 deg.C. The reaction gas (CH4) is introduced together with the carrier gas (H2) into the vacuum chamber, and the total gas pressure is adjusted to 10 -25 Torr. The flow ratio of H2/CH4 is selected between 10 and 250. An external high-frequency or DC electrical field is applied to a part of the vacuum chamber to form an ionization zone. The mixture of CH4 and H2 is passed through the ionization zone in 0.05-2.0sec to effect the vapor-phase synthesis of a high- purity diamond free from free carbon on the substrate in high efficiency.
摘要翻译：目的：通过使反应气体和载气的混合物通过电离区，高效率地进行金刚石气相合成的CVD工艺。构成：将一个子状物置于真空室中，并加热至400-1000℃。将反应气体（CH4）与载气（H2）一起引入真空室，并将总气体压力调节至10 -5 -2 Tor。 H2 / CH4的流量比选择在10和250之间。外部高频或DC电场施加到真空室的一部分以形成电离区。 CH4和H2的混合物在0.05-2.0秒内通过电离区，以高效率地进行在底物上不含游离碳的高纯度金刚石的气相合成。

3. 发明专利

JPS6173882A Material coated with very hard layer 失效
标题翻译：材料涂层非常硬的层
公开(公告)号：JPS6173882A
公开(公告)日：1986-04-16
申请号：JP19258084
申请日：1984-09-17
申请人： Sumitomo Electric Ind Ltd
发明人： DOI AKIRA , YOSHIOKA TAKESHI
IPC分类号： C04B41/89 , C23C16/26 , C23C16/27 , C23C28/04 , C30B25/02
CPC分类号： C23C28/04 , C30B25/02 , C30B29/04
摘要： PURPOSE:To obtain an inexpensive material coated with a very hard layer by forming a low hard layer contg. amorphous diamond or CBN as the 1st layer contacting with a base material when a layer contg. the very hard layer of diamond or CBN is formed by vapor deposition. CONSTITUTION:When diamond or CBN is vapor-deposited on a base material to obtain a material coated with a very hard layer, a low hard layer contg. 30-70vol% amorphous diamond or CBN is formed as the inner layer. The top layer contains >=95vol% crystalline diamond or CBN. The thicknesses of inner and autermost layers are regulated to 0.1-5mum each.
摘要翻译：目的：通过形成低硬度层以获得涂有非常硬的层的廉价材料。无定形金刚石或CBN作为第一层与基材接触时，通过气相沉积形成非常硬的金刚石层或CBN层。构成：当将金刚石或CBN气相沉积在基材上以获得涂覆有非常硬的层的材料时，低硬度层形成30-70vol％非晶金刚石或CBN作为内层。顶层含有> = 95vol％的结晶金刚石或CBN。内层和最内层的厚度各自调节为0.1-5μm。

4. 发明专利

JPS59197559A Coating type clock frame 失效
标题翻译：涂层式时钟框架
公开(公告)号：JPS59197559A
公开(公告)日：1984-11-09
申请号：JP6913383
申请日：1983-04-21
申请人： Sumitomo Electric Ind Ltd
发明人： FUJIMORI NAOHARU , DOI AKIRA , YOSHIOKA TAKESHI
IPC分类号： C23C16/26 , C23C16/27 , G04B37/22
CPC分类号： C23C16/006 , C23C16/26
摘要： PURPOSE:To provide a coating type clock frame excellent in decorative property, scratch resistance and corrosion resistance, obtained by coating the clock frame with diamond like carbon. CONSTITUTION:A clock frame having a complicated shape is coated with diamond like carbon obtained through the decomposition of hydrocarbon in plasma by vapor deposition coating from a gas phase. In this case, a color can be variously changed by controlling the thickness of the coating layer but the thickness of said coating layer is pref. about 0.05-5mum.
摘要翻译：目的：提供具有优异的装饰性，耐擦伤性和耐腐蚀性的涂层式钟架，通过用类金刚石涂布钟框获得。构成：具有复杂形状的时钟框架涂覆有通过气相沉积涂层在等离子体中分解烃获得的类金刚石。在这种情况下，通过控制涂层的厚度，但是优选涂覆层的厚度，可以不同地改变颜色。约0.05-5mum。

5. 发明专利

JPS59176701A Reflection preventing film 失效
标题翻译：反射防止电影
公开(公告)号：JPS59176701A
公开(公告)日：1984-10-06
申请号：JP5073183
申请日：1983-03-25
申请人： Sumitomo Electric Ind Ltd
发明人： YOKOTA MINORU , ASHIDA NORIYUKI , TAKAHASHI KENICHI , DOI AKIRA , FUJIMORI NAOHARU , YOSHIOKA TAKESHI
IPC分类号： G02B1/02 , G02B1/11
CPC分类号： G02B1/115
摘要： PURPOSE:To obtain a reflection preventing film which increases in mechanical strength without any deterioration in optical characteristics and also has excellent moisture resistance by providing a diamond thin film as a protection layer on the reflection preventing layer. CONSTITUTION:A substrate made of infrared-light transmittive material [e.g. AgBr (reflective index: 2.17), etc.] having a high refractive index is coated with the reflection preventing layer 2 made of material [e.g. KCl (refractive indes: 1.46), etc.] with a refractive index close to the square root of the refractive index of said infrared-light transmitter to thickness t=lambda/4n (where lambda is the wavelength of light in use and (n) is the refractive index of the film), and the protection layer 3 coated with the diamond thin film to a 0.01-0.5mum thickness is provided over the reflection preventing layer 2. Thus, the protection layer 3 is provided over the reflection preventing layer 2 to increase the mechanical strength of the layer 2 without any deterioration in optical characteristics, and the moisture resistance of the reflection preventing layer is improved.
摘要翻译：目的：为了获得机械强度增加而没有光学特性降低并且还通过在防反射层上提供金刚石薄膜作为保护层而具有优异的耐湿性的防反射膜。构成：由红外线透射材料制成的基板[例如，具有高折射率的AgBr（反射率：2.17）等]涂覆有由材料制成的防反射层2 [例如，折射率接近于所述红外线发射器的折射率的平方根的厚度t =λ/ 4n（其中λ是使用的光的波长和（n ）为薄膜的折射率），在反射防止层2的上方设置覆盖有金刚石薄膜的保护层3，厚度为0.01-0.5μm。因此，保护层3设置在反射防止层 2以增加层2的机械强度，而光学特性没有任何劣化，并且防反射层的耐湿性得到改善。

6. 发明专利

JPS59143499A Speaker diaphragm 失效
标题翻译：扬声器胶片
公开(公告)号：JPS59143499A
公开(公告)日：1984-08-17
申请号：JP1713883
申请日：1983-02-03
申请人： Sumitomo Electric Ind Ltd
发明人： FUJIMORI NAOHARU , DOI AKIRA , YOSHIOKA TAKESHI
IPC分类号： H04R7/02
CPC分类号： H04R7/02
摘要： PURPOSE:To obtain superior conversion characteristics at a high singing range of voice by coating the surface of a base body with a diamond film or an amorphous carbon film. CONSTITUTION:When it is defined that Young's modulus is E and specific gravity is rho, a diaphragm material with higher E/rho obtains more superior conversion characteristics at a high singing range of voice. Diamond has the highest modulus of elasticity E/rho. An amorphous carbon film also has similar property as a diamond film and its Young's modulus E and specific gravity are almost similar to that of diamond. When these films are used as a single body, it is difficult to obtain a film with the thickness of 10mu or more and the strength is also low. Therefore, said trouble can be removed by coating the surface of a metallic base body with the diamond film or amorphous carbon film.
摘要翻译：目的：通过用金刚石膜或无定形碳膜涂覆基体的表面，在高歌声范围内获得优异的转换特性。构成：当确定杨氏模量为E且比重为rho时，具有较高E / rho的隔膜材料在高歌声范围内获得更优异的转换特性。钻石具有最高的弹性模量E / rho。无定形碳膜也具有与金刚石膜相似的性质，其杨氏模量E和比重几乎与金刚石相似。当这些膜用作单体时，难以获得厚度为10微米或更大并且强度也低的膜。因此，通过用金刚石膜或无定形碳膜涂覆金属基体的表面可以除去所述麻烦。

7. 发明专利

JPS5916969A Boron nitride coated parts 失效
标题翻译： BORON NITRIDE COATED PARTS
公开(公告)号：JPS5916969A
公开(公告)日：1984-01-28
申请号：JP12654782
申请日：1982-07-19
申请人： Sumitomo Electric Ind Ltd
发明人： DOI AKIRA , NAKANO MINORU , YOSHIOKA TAKESHI
IPC分类号： C04B41/87 , C23C16/30 , C23C16/34
CPC分类号： C23C16/342
摘要： PURPOSE:To provide the titled parts having a high purity dense boron nitride coating with a proper thickness good in close adhesiveness, obtained by forming the boron nitride coating to the surface of a metal material by a chemical vapor deposition method. CONSTITUTION:The surface of a metal, a ceramic or a plastic material such as a bearing material, a high frequency insulating material, a resistor material, a crucible material, a casting die material, a rocket nozzle material or a nuclear reactor shielding structural material is coated with a boron nitride coating with a thickness 1-50mum by a chemical vapor deposition method to obtain excellent boron nitride coated parts. As the above chemical vapor deposition method, a plasma chemical vapor deposition method is pref. used and, by this method, a hexagonal film comprising a fine particle with a particle size of 0.1-5mum, an amorphous film or a mixed film thereof can be formed at a relatively low temp. of about 200-800 deg.C in an atmosphere comprising BCl3, N2 and H2.
摘要翻译：目的：提供通过化学气相沉积法将金属材料的表面形成氮化硼涂层而获得的具有良好密合性的适当厚度的具有高纯度致密氮化硼涂层的标题部件。构成：金属，陶瓷或塑料材料如轴承材料，高频绝缘材料，电阻材料，坩埚材料，铸模材料，火箭喷嘴材料或核反应堆屏蔽结构材料的表面通过化学气相沉积法涂覆厚度为1-50μm的氮化硼涂层，以获得优异的氮化硼涂覆部件。作为上述化学气相沉积方法，优选等离子体化学气相沉积法。并且通过该方法，可以在相对低的温度下形成包含粒径为0.1-5μm的细颗粒的六方膜，非晶膜或其混合膜。在包含BCl 3，N 2和H 2的气氛中约为200-800℃。

8. 发明专利

JPS6146915A Optical fiber 失效
标题翻译：光纤
公开(公告)号：JPS6146915A
公开(公告)日：1986-03-07
申请号：JP16868884
申请日：1984-08-10
申请人： Sumitomo Electric Ind Ltd
发明人： YOSHIOKA TAKESHI , FUJIMORI NAOHARU , DOI AKIRA
IPC分类号： C03C25/42 , G02B6/44
摘要： PURPOSE: To prevent the corrosion owing to the adsorption of the moisture in the atmospheric air and the generation of microcracks owing to the corrosion and to obtain an optical fiber having excellent durability by covering the surface of the optical fiber with a film of BN within a specific thickness range.
CONSTITUTION: The BN film is formed on the optical fiber consisting of glass base or acryl base by such a method consisting in heating the fiber, subjecting a gaseous mixture composed of B
2 H
6 and NH
3 to high-frequency cracking and covering the fiber with the BN film in the case of the glass and by an ion beam deposition method, etc. in the case of the plastic base. The BN film may be formed to a 500ÅW30μ thickness range and may be formed by either the crystalline or non-crystalline film. The covering effect is not enough at ≤500Å and the fiber is liable to crack at ≥30μ. The covering which has the high mechanical strength is thus obtd. The generation of the microcracks as a result of the absorption of the moisture in the atmospheric air and the stress corrosion cracking of the fiber and the easy tendency to breakage on progression of the cracks in a long period are prevented.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了防止由于大气中的水分吸附而引起的腐蚀和由于腐蚀而产生微裂纹，并且通过用BN膜覆盖光纤表面来获得具有优异耐久性的光纤具体厚度范围。构成：通过加热纤维，将由B2H6和NH3组成的气体混合物进行高频裂化并用BN膜覆盖纤维的方法，在由玻璃基体或丙烯酸基团构成的光纤上形成BN膜在塑料基材的情况下，在玻璃和离子束沉积方法等的情况下。 BN膜可以形成为厚度为-30微米的厚度范围，并且可以由结晶或非晶体膜形成。覆盖效应在<= 500Angstrom下不够，并且纤维在> = 30mu时容易破裂。因此具有高机械强度的覆盖物。由于吸收大气中的水分和纤维的应力腐蚀开裂以及在长时间内容易发生裂纹的倾向，因此可以防止微裂纹的产生。

9. 发明专利

JPS59213126A Manufacture of diamond semiconductor element 失效
标题翻译：金刚石半导体元件的制造
公开(公告)号：JPS59213126A
公开(公告)日：1984-12-03
申请号：JP8848783
申请日：1983-05-19
申请人： Sumitomo Electric Ind Ltd
发明人： DOI AKIRA , FUJIMORI NAOHARU , YOSHIOKA TAKESHI
IPC分类号： H01L29/73 , H01L21/205 , H01L21/331 , H01L29/16 , H01L29/861 , H01L29/72 , H01L29/91
CPC分类号： H01L29/1602 , H01L21/02376 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： PURPOSE:To obtain the diamond semiconductor element to be used when diamond is utilized as an active element and a passive element by a method wherein an N type diamond layer is epitaxially grown on a substrate, an insulating film is then vacuum-deposited in vapor phase, a photoetching is performed, P or N type impurity element is ion-implanted, a diffusion process is performed, and an electrode metal is vapor-deposited. CONSTITUTION:As the substrate material, a P or As-added N type diamond single crystal having face 100 or face 111 on the upper surface is used when an individual diode, transistor or capacitor which is independently formed as an element is manufactured, and a B-added P type diamond single crystal is used in the state wherein face 100 or face 111 is on the upper surface when a number of elements are simultaneously formed as an integrated circuit. As the thin film to be formed on the substrate, an As or P-added N type diamond film is used. It is indispensable that said thin film is obtained by performing an epitaxial growing method in order to have the required electromagnetic characteristics. A circuit consisting of P-N junction and the like is formed on the N type epitaxial diamond film obtained as above using ion-implanting technique and photoetching technique.
摘要翻译：目的：为了获得当金刚石用作活性元素时使用的金刚石半导体元件和通过其中在衬底上外延生长N型金刚石层的方法的无源元件，然后将绝缘膜以气相真空沉积进行光蚀刻，离子注入P或N型杂质元素，进行扩散处理，并蒸镀电极金属。构成：作为基板材料，当制造独立地作为元件形成的单独的二极管，晶体管或电容器时，使用在上表面上具有面100或面111的P或As加入的N型金刚石单晶，在多个元件同时形成为集成电路的情况下，使用B型P型金刚石单晶，其中面100或面111位于上表面。作为在基板上形成的薄膜，使用As或P-添加的N型金刚石膜。为了具有所需的电磁特性，通过进行外延生长方法获得所述薄膜是必不可少的。在使用离子注入技术和光刻技术的上述获得的N型外延金刚石膜上形成由P-N结等构成的电路。

10. 发明专利

JPS59217700A Device for producing compound semiconductor and method for manufacturing thereof 失效
标题翻译：用于生产化合物半导体的器件及其制造方法
公开(公告)号：JPS59217700A
公开(公告)日：1984-12-07
申请号：JP8954583
申请日：1983-05-20
申请人： Sumitomo Electric Ind Ltd
发明人： YOSHIOKA TAKESHI , DOI AKIRA , FUJITA KEIICHIROU
IPC分类号： C30B15/10 , C30B35/00 , H01L21/20
CPC分类号： C30B15/10
摘要： PURPOSE:To obtain a quartz part suitable for the growth of compound semiconductor single crystal, by coating the surface of a quartz part with a thin layer of BN, AlN, etc. using plasma CVD process. CONSTITUTION:A quartz part for the growth of a compound semiconductor (e.g. boat, liner tube, container, etc. usd as a member for pulling method, lateral pulling method, etc.) is coated with an amorphous coating layer of BN or AlN having a thickness of 0.5mu-5mm. by the plasma CVD process at
摘要翻译：目的：为了获得适合于化合物半导体单晶生长的石英部分，通过使用等离子体CVD法将BN，AlN等的薄层涂覆在石英部分的表面上。构成：用BN或AlN的无定形涂层涂覆用于生长化合物半导体（例如船，衬管，容器等作为牵引方法，侧拉法等）的石英部分，其具有BN或AlN的无定形涂层，厚度为0.5mu-5mm。通过等离子体CVD法在<= 900℃。由于所得到的部分覆盖有与化合物半导体的熔融液体具有低反应性的涂层，并且具有优异的高温强度和高透明度，因此可以防止杂质污染，并且该部件可以长时间稳定地使用期间不会导致晶体生长的检查困难。

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