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1. 发明专利

JP2011124521A Semiconductor laser and method of manufacturing the same 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：JP2011124521A
公开(公告)日：2011-06-23
申请号：JP2009283447
申请日：2009-12-14
申请人： Sony Corp , ソニー株式会社
发明人： YOKOZEKI MIKIHIRO , SAWAHATA JUNJI , YANASHIMA KATSUNORI , OKUBO YOSHIKAZU
IPC分类号： H01S5/22 , H01S5/24 , H01S5/343
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/3201 , H01S5/34333 , H01S2304/12
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser whose strain is sufficiently relaxed and also to provide a method of manufacturing the same.
SOLUTION: A plurality of belt-like grooves 10A are provided on an upper surface of a substrate 10. The plurality of grooves 10A are provided on both sides of a portion (belt-like region 27A) opposed to a ridge portion 27 along the belt-like region 27A. A length L
1 of each groove 10A in a resonator direction is shorter than L
3 /2, where L
3 is a resonator length. On the upper surface of the substrate 10, regions (groove non-formation rectangular regions 10B) are present which are sandwiched between grooves 10A in an extending direction of the ridge portion 27. A length L
2 of each of the groove non-formation regions 10B in a resonator direction is equal to or less than L
3 /3.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供其应变充分松弛的半导体激光器，并且还提供其制造方法。解决方案：在基板10的上表面上设置多个带状槽10A。多个槽10A设置在与脊部27相对的部分（带状区域27A）的两侧沿着带状区域27A。每个槽10A在谐振器方向上的长度L 1 短于L 3 SB 3/2，其中L 3是谐振器长度。在基板10的上表面上，存在沿着脊部27的延伸方向夹在槽10A之间的区域（凹槽非形成矩形区域10B）。各自的长度L 2 的沟槽非形成区域10B在谐振器方向上等于或小于L 3 SB 3/3。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2006229066A Semiconductor light emitting element, its manufacturing method, and optical module 有权
标题翻译：半导体发光元件及其制造方法和光学模块
公开(公告)号：JP2006229066A
公开(公告)日：2006-08-31
申请号：JP2005042771
申请日：2005-02-18
申请人： Sony Corp , ソニー株式会社
发明人： SATO YASUO , OTOMO JUGO , YOKOZEKI MIKIHIRO , HINO TOMOKIMI , NARUI HIRONOBU
IPC分类号： H01S5/343 , B82Y20/00
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/3235 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of contriving the elongation of life, its manufacturing method, and an optical module employing the element.
SOLUTION: The optical module is provided with an active layer 14 laminating a well layer 14A consisting of a Ga
1-x In
x N
y As
1-y-z Sb
z mixed crystal (0≤ v As
1-v mixed crystal (0≤v 19 cm
-3 , and that of aluminum is specified so as to be less than 1×10
18 cm
-3 . According to this method, the increase of operation current is suppressed and the elongation of life can be contrived. The concentration of hydrogen can be reduced by reducing the flow rate of organic nitrogen compound employed as the material of nitrogen upon glowing the active layer 14.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够延长寿命的半导体发光元件，其制造方法和使用该元件的光学模块。解决方案：光学模块设置有层叠由Ga 1 SB x Y y S x x S x S x S y i x i i所示的阱层14A的有源层14。（0≤ 1）和由GaN（1≤v）混合晶体（0≤v<1）组成的阻挡壁层14B。活性层14中的氢的杂质浓度规定为小于3×10 cm -3，而铝的含量为小于1×10 18 cm -3 。根据该方法，可以抑制运转电流的增加，延长使用寿命。可以通过降低在发光活性层14时用作氮材料的有机氮化合物的流速来降低氢的浓度。版权所有：（C）2006，JPO＆NCIPI

3. 发明专利

JP2014235418A 表示装置および電子機器有权
标题翻译：显示单元和电子设备
公开(公告)号：JP2014235418A
公开(公告)日：2014-12-15
申请号：JP2013119220
申请日：2013-06-05
申请人：ソニー株式会社 , Sony Corp
发明人： YOKOZEKI MIKIHIRO , KODATE MANABU , SHIMA SHUICHI , ITO TAKESHI , KUBOTA HITOSHI , NAKAMURA ETSUKO
IPC分类号： G09F9/30 , G02F1/13 , G02F1/15 , G02F1/157 , H01L51/50
CPC分类号： G02F1/1506 , G02F1/19 , G02F2201/44 , H01L27/3232
摘要：【課題】高い視認性を有する表示装置および電子機器表を提供する。【解決手段】本開示の表示装置は、対向配置された一対の第1基板および第2基板と、第1基板および第2基板の間に設けられた表示層と、画素ごとに開口を有すると共に、表示層および第2基板との間に配設された表示モード切替層とを備える。【選択図】図1
摘要翻译：要解决的问题：提供具有高可见度的显示单元和电子设备。解决方案：提供一种显示单元，其包括：一对彼此相对布置的第一基板和第二基板; 设置在所述第一基板和所述第二基板之间的显示层; 以及具有用于每个像素的孔的显示模式切换层，并且设置在显示层和第二基板之间。

4. 发明专利

JP2009188085A Growth method of single-crystal oxychalcogenide system thin film, semiconductor laminated structure, and method for manufacturing semiconductor device, and the semiconductor device 审中-公开
标题翻译：单晶氧化硅系统薄膜的生长方法，半导体层压结构及制造半导体器件的方法及半导体器件
公开(公告)号：JP2009188085A
公开(公告)日：2009-08-20
申请号：JP2008024883
申请日：2008-02-05
申请人： Sony Corp , ソニー株式会社
发明人： YOKOZEKI MIKIHIRO , SHIOMI HARUNORI , HATADA IZUHO , YANASHIMA KATSUNORI
IPC分类号： H01L21/36 , C23C14/06 , C23C16/30 , C30B23/08 , C30B25/02 , C30B29/22 , H01L21/363 , H01L21/365 , H01L33/28
CPC分类号： H01L21/02565 , H01L21/02403 , H01L21/02483 , H01L21/02485 , H01L21/02568
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a single-crystal oxychalcogenide system thin film, capable of making grown a proper quality single-crystal oxychalcogenide system thin film having a precipitous interface between thin films. SOLUTION: An amorphous oxychalcogenide system thin film 102 is grown on a substrate 101 comprising a YSZ substrate, a MgO substrate, or the like, by the pulse laser deposition method and the sputtering method, and a single-crystal oxychalcogenide system thin film 103 is formed by crystallizing the amorphous oxychalcogenide system thin film 102 by the reactive solid-phase epitaxial growth method. A crystal oxychalcogenide thin film 104 is grown on the single-crystal oxychalcogenide system thin film 103 by the solution vaporization CVD method from an early phase of the epitaxial growth. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长单晶氧化硫系体系薄膜的方法，其能够生长具有在薄膜之间具有沉淀界面的合适质量的单晶氧化硫系体系薄膜。解决方案：通过脉冲激光沉积法和溅射法，在包含YSZ衬底，MgO衬底等的衬底101上生长无定形氧化硫系体系薄膜102，并且将单晶氧化硫化物体系薄膜103通过用反应性固相外延生长法使无定形氧化硫系体系薄膜102结晶而形成。从外延生长的早期阶段，通过溶液蒸发CVD法在单晶氧化硫系体系薄膜103上生长氧化硫化物氧化物薄膜104。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2006339534A Light emitting diode, manufacturing method therefor, light emitting diode back light, light emitting diode lighting device, light emitting diode display and electronic apparatus 审中-公开
标题翻译：发光二极管，其制造方法，发光二极管背光，发光二极管照明装置，发光二极管显示器和电子装置
公开(公告)号：JP2006339534A
公开(公告)日：2006-12-14
申请号：JP2005164757
申请日：2005-06-03
申请人： Sony Corp , ソニー株式会社
发明人： YOKOZEKI MIKIHIRO , SHIOMI HARUNORI , AMI TAKAAKI , ARIMOCHI SUKEYUKI , YANASHIMA KATSUNORI
IPC分类号： H01L33/06 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a light emitting diode having extremely high light emitting efficiency by considerably improving extraction efficiency of light while sufficiently acquiring the volume of an active layer, and to provide a method for manufacturing it. SOLUTION: An n-type GaN layer 12, an n-type GaInN buffer layer 14, an n-type GaN layer 15, an active layer 16 of an MQW structure comprising an InGaN well layer and a GaN barrier layer, a p-type AlGaN layer 17, and a p-type GaN layer 18 are epitaxially grown in this order on a sapphire substrate 11 whose one principal surface is made uneven, to form a light emitting diode structure. At this time of growth, a six-sided pyramid-like pit 19 is formed with a part of a threading dislocation 13 formed at an assembling part formed at an upper part of a protruding part 11b of the sapphire substrate 11, as a starting point. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：通过大幅提高光的提取效率，同时充分获得活性层的体积，提供具有极高发光效率的发光二极管，并提供其制造方法。解决方案：n型GaN层12，n型GaInN缓冲层14，n型GaN层15，包括InGaN阱层和GaN势垒层的MQW结构的有源层16， p型AlGaN层17和p型GaN层18依次外延生长在蓝宝石衬底11上，该蓝宝石衬底11的一个主表面是不均匀的，以形成发光二极管结构。在这个生长时刻，形成六边形金字塔状的凹坑19，其形成有形成在形成于蓝宝石基板11的突出部分11b的上部的组装部分处的穿透位错13的一部分，作为起点。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2014044793A Display device and electronic apparatus 有权
标题翻译：显示设备和电子设备
公开(公告)号：JP2014044793A
公开(公告)日：2014-03-13
申请号：JP2012176507
申请日：2012-08-08
申请人： Sony Corp , ソニー株式会社
发明人： SAITO TAKAHISA , IZUMI KENICHI , TERAGUCHI SHINICHI , NAKAHIRA TADAKATSU , YOKOZEKI MIKIHIRO , NISHI SHOTA , KODATE MANABU
IPC分类号： H05B33/04 , H01L51/50 , H05B33/12 , H05B33/22
CPC分类号： H01L51/5253 , H01L27/3244 , H01L51/5237 , H01L51/524 , H01L51/5246
摘要： PROBLEM TO BE SOLVED: To provide a display device excellent in reliability.SOLUTION: The display device comprises: a substrate 111 and a sealing substrate 19 disposed to face each other; a planarized film 218 provided on the substrate 111; a plurality of EL elements 10W arrayed in a display region 110A facing the sealing substrate 19 on the planarized film 218; and a moisture-proof film 17 covering the planarized film 218 in a peripheral region 110B surrounding the display region 110A on the substrate 111.
摘要翻译：要解决的问题：提供可靠性优异的显示装置。解决方案：显示装置包括：基板111和密封基板19，彼此相对配置; 设置在基板111上的平坦化膜218; 排列在平面化膜218上的与密封基板19相对的显示区域110A中的多个EL元件10W; 以及在围绕基板111上的显示区域110A的周边区域110B中覆盖平坦化膜218的防湿膜17。

7. 发明专利

JP2013110374A Light emitting element, method of manufacturing the same, and light emitting device 有权
标题翻译：发光元件，其制造方法和发光装置
公开(公告)号：JP2013110374A
公开(公告)日：2013-06-06
申请号：JP2011283570
申请日：2011-12-26
申请人： Sony Corp , ソニー株式会社
发明人： YOKOZEKI MIKIHIRO , AOYANAGI HIDEKAZU , SHIOMI HARUNORI , KAWASAKI TAKAHIKO , ITO KATSUTOSHI , KOYAMA YUKIHIRO , NARUI HIRONOBU
IPC分类号： H01L33/44
CPC分类号： H01L33/02 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To provide a light emitting element in which the nonradiative recombination at the end surface of an active layer is suppressed and its light emission efficiency is improved, and a method of manufacturing the light emitting element.SOLUTION: A light emitting element includes: a laminated body including a first conductive semiconductor layer, the active layer, and a second conductive semiconductor layer in this order, the second conductive semiconductor layer having a light extraction surface; and a recombination suppression structure provided at least in the vicinity of an end surface of the active layer, the recombination suppression structure having a bandgap larger than a bandgap of the active layer.
摘要翻译：解决的问题：提供抑制有源层的端面的非辐射复合并提高其发光效率的发光元件，以及制造发光元件的方法。解决方案：发光元件包括：依次包括第一导电半导体层，有源层和第二导电半导体层的层叠体，第二导电半导体层具有光提取表面; 以及至少在有源层的端面附近提供的复合抑制结构，所述复合抑制结构具有比有源层的带隙大的带隙。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2011138934A Thin film transistor, display device, and electronic equipment 审中-公开
标题翻译：薄膜晶体管，显示器件和电子设备
公开(公告)号：JP2011138934A
公开(公告)日：2011-07-14
申请号：JP2009298103
申请日：2009-12-28
申请人： Sony Corp , ソニー株式会社
发明人： TANIGUCHI OSAMU , YOKOZEKI MIKIHIRO , MIYASHITA HIROKO , SUZUKI JUICHI
IPC分类号： H01L29/786 , C01G15/00 , G02F1/1368 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78693
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor improving mobility of carriers, and a display device and electronic equipment using such a thin film transistor. SOLUTION: An oxide semiconductor layer 15 is constituted of a multilayer film including: a carrier transit layer 151 constituting a channel; and a carrier supply layer 152. A conduction band lower end level Ec2 in the carrier supply layer 152 is set to become energetically higher than a conduction band lower end level Ec1 in the carrier transit layer 151 (Ec2>Ec1). Carriers (electrons) are supplied from the carrier supply layer 152 to the carrier transit layer 151, allowing the electrons to be accumulated in an area near an interface with the carrier supply layer 152 inside the carrier transit layer 151. Thus, transit scattering with respect to the electrons is inhibited as compared with conventional techniques. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供提高载流子迁移率的薄膜晶体管，以及使用这种薄膜晶体管的显示装置和电子设备。解决方案：氧化物半导体层15由多层膜构成，包括：构成沟道的载流子迁移层151; 和载流子供给层152.载流子供给层152中的导带下端电平Ec2被设定为高于载流子传输层151（Ec2> Ec1）中的导带下端电平Ec1。载体（电子）从载体供给层152提供到载流子迁移层151，允许电子积聚在载流子输送层151内部与载体供给层152的界面附近的区域中。因此，相对于与传统技术相比，电子被抑制。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2012169344A Thin film transistor, display device and electronic equipment 审中-公开
标题翻译：薄膜晶体管，显示器件和电子设备
公开(公告)号：JP2012169344A
公开(公告)日：2012-09-06
申请号：JP2011027293
申请日：2011-02-10
申请人： Sony Corp , ソニー株式会社
发明人： YOKOZEKI MIKIHIRO
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor capable of reducing variation in device characteristics with using a polycrystalline oxide semiconductor as a channel and maintaining mobility of a carrier.SOLUTION: A thin film transistor 1 is a bottom gate type TFT and comprises a gate electrode 12, a gate insulation film 13, a channel layer 14 consisting primarily of a polycrystalline oxide semiconductor, and source-drain electrodes 15A, 15B formed on a substrate 11 in this order. The channel layer 14 is formed such that the thickness becomes smaller than a diameter of an average crystal grain of the polycrystalline oxide semiconductor included in the channel layer. Accordingly, a transit direction of a carrier is controlled and device characteristics are stabilized.
摘要翻译：要解决的问题：提供一种能够通过使用多晶氧化物半导体作为沟道并且保持载流子的迁移率来减小器件特性的变化的薄膜晶体管。解决方案：薄膜晶体管1是底栅型TFT，包括栅电极12，栅极绝缘膜13，主要由多晶氧化物半导体组成的沟道层14和形成的源漏电极15A，15B 在基板11上。沟道层14形成为使得该厚度变得小于包含在沟道层中的多晶氧化物半导体的平均晶粒的直径。因此，可以控制载体的运送方向，使装置特性稳定。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2006019617A Semiconductor laser 审中-公开
标题翻译：半导体激光器
公开(公告)号：JP2006019617A
公开(公告)日：2006-01-19
申请号：JP2004197848
申请日：2004-07-05
申请人： Sony Corp , ソニー株式会社
发明人： YOKOZEKI MIKIHIRO , OTOMO JUGO , HINO TOMOKIMI , NARUI HIRONOBU
IPC分类号： H01S5/20
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser which raises a temperature characteristic and reduces a threshold current with an excellent reliability.
SOLUTION: An SAS structure is formed with a second guide layer 15, a current blocking layer 16, and a second clad layer 18. An active layer 14 is composed of a GaAs system group III-V compound semiconductor containing nitrogen (N) such as GaInNAs mix crystal or the like. A band discontinuous amount ΔEc of the active layer 14 becomes large, carriers can efficiently be confined, and the temperature characteristic is increased. Further, a refractive index is increased, light is confined in the active layer 14, and the increase of the threshold current is suppressed. The thickness t1 of a first guide layer 13, and the total thickness t2 of a second guide layer 15 and a second clad layer 18 are each 100 nm to 500 nm, for example, preferably. A diffraction lattice layer may be provided to form a DFB laser.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种以优异的可靠性提高温度特性并降低阈值电流的半导体激光器。解决方案：SAS结构形成有第二引导层15，电流阻挡层16和第二覆盖层18.有源层14由含有氮（N）的GaAs系III-V族化合物半导体）如GaInNAs混合晶体等。有源层14的带不连续量ΔEc变大，载流子能够被有效地限制，并且温度特性增加。此外，折射率增加，光被限制在有源层14中，并且阈值电流的增加被抑制。第一引导层13的厚度t1以及第二引导层15和第二覆盖层18的总厚度t2例如优选为100nm〜500nm。可以提供衍射晶格层以形成DFB激光器。版权所有（C）2006，JPO＆NCIPI

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