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1. 发明专利

JP2013110374A Light emitting element, method of manufacturing the same, and light emitting device 有权
标题翻译：发光元件，其制造方法和发光装置
公开(公告)号：JP2013110374A
公开(公告)日：2013-06-06
申请号：JP2011283570
申请日：2011-12-26
申请人： Sony Corp , ソニー株式会社
发明人： YOKOZEKI MIKIHIRO , AOYANAGI HIDEKAZU , SHIOMI HARUNORI , KAWASAKI TAKAHIKO , ITO KATSUTOSHI , KOYAMA YUKIHIRO , NARUI HIRONOBU
IPC分类号： H01L33/44
CPC分类号： H01L33/02 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To provide a light emitting element in which the nonradiative recombination at the end surface of an active layer is suppressed and its light emission efficiency is improved, and a method of manufacturing the light emitting element.SOLUTION: A light emitting element includes: a laminated body including a first conductive semiconductor layer, the active layer, and a second conductive semiconductor layer in this order, the second conductive semiconductor layer having a light extraction surface; and a recombination suppression structure provided at least in the vicinity of an end surface of the active layer, the recombination suppression structure having a bandgap larger than a bandgap of the active layer.
摘要翻译：解决的问题：提供抑制有源层的端面的非辐射复合并提高其发光效率的发光元件，以及制造发光元件的方法。解决方案：发光元件包括：依次包括第一导电半导体层，有源层和第二导电半导体层的层叠体，第二导电半导体层具有光提取表面; 以及至少在有源层的端面附近提供的复合抑制结构，所述复合抑制结构具有比有源层的带隙大的带隙。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2008227423A Light source device and liquid crystal display device 有权
标题翻译：光源装置和液晶显示装置
公开(公告)号：JP2008227423A
公开(公告)日：2008-09-25
申请号：JP2007067724
申请日：2007-03-16
申请人： Sony Corp , ソニー株式会社
发明人： OTOMO KOJI , AOYANAGI HIDEKAZU , FUJINO TOYOMI , YASUDA ATSUSHI
IPC分类号： H01L33/50 , F21S2/00 , F21S8/04 , F21Y101/02 , G02F1/13357
CPC分类号： H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a light source device and a liquid crystal display device capable of improving electrostatic breakdown voltage of a light emitting element without damaging color mixing properties of each RGB color.
SOLUTION: The light source device 11 includes: an LED chip group 12 which is comprised of LED chips of each RGB color to produce white color by mixing each coloured light; protective elements 15G1, 15G2 and 15B which protect green and blue LED chips 12G1, 12G2 and 12B from electrostatic discharge damage of them; and a wiring board 13 mounted with these LED chip group and protective elements. The wiring board 13 is mounted with a plurality of sets of LED chip groups 12, and the protective elements are mounted at the place out of mixing regions of each color of the LED chip groups 12 in the wiring board. Thereby, without damaging color mixing properties of coloured lights emitted from the LED chips of each color, electrostatic breakdown voltage of the LED chips is improved.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够改善发光元件的静电击穿电压而不损害每种RGB颜色的混色特性的光源装置和液晶显示装置。解决方案：光源装置11包括：LED芯片组12，其由每个RGB颜色的LED芯片组成，以通过混合每个有色光产生白色; 保护元件15G1,15G2和15B，其保护绿色和蓝色LED芯片12G1,12G2和12B免受它们的静电放电损坏; 以及安装有这些LED芯片组和保护元件的布线板13。布线板13安装有多组LED芯片组12，并且保护元件安装在布线板中的LED芯片组12的各颜色的混合区域之外的位置处。由此，不损害从各种颜色的LED芯片发出的有色光的混色特性，提高了LED芯片的静电击穿电压。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2013157496A Light-emitting element, method of manufacturing the same, and light-emitting device 审中-公开
标题翻译：发光元件，其制造方法和发光装置
公开(公告)号：JP2013157496A
公开(公告)日：2013-08-15
申请号：JP2012017660
申请日：2012-01-31
申请人： Sony Corp , ソニー株式会社
发明人： AOYANAGI HIDEKAZU , KAWASAKI TAKAHIKO , SHIOMI HARUNORI , ITO KATSUTOSHI , NAKAJIMA MAKOTO
IPC分类号： H01L33/38
CPC分类号： H01L33/62 , H01L33/385 , H01L33/44 , H01L2224/48091 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element having further high strength and luminous efficiency, a method of manufacturing the same, and a light-emitting device.SOLUTION: A light-emitting element includes: a stack having a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer in this order; a contact layer provided in contact with at least the circumference of the second-conductivity-type semiconductor layer; a first electrode electrically connected to the first-conductivity-type semiconductor layer; a second electrode provided on the first-conductivity-type semiconductor layer side; and wiring electrically connecting the second electrode and the contact layer.
摘要翻译：要解决的问题：提供具有更高的强度和发光效率的发光元件，其制造方法和发光器件。解决方案：发光元件包括：具有第一导电性的叠层型半导体层，发光层和第二导电型半导体层; 接触层，设置成与所述第二导电型半导体层的至少周边相接触; 电连接到第一导电型半导体层的第一电极; 设置在第一导电型半导体层侧的第二电极; 以及电连接第二电极和接触层的布线。

4. 发明专利

JP2011211082A Light emitting diode, and method of manufacturing the same 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：JP2011211082A
公开(公告)日：2011-10-20
申请号：JP2010079283
申请日：2010-03-30
申请人： Sony Corp , ソニー株式会社
发明人： KAWASAKI TAKAHIKO , AOYANAGI HIDEKAZU
IPC分类号： H01L33/38 , H01L33/10
摘要： PROBLEM TO BE SOLVED: To provide a light emitting diode obtaining a dotted or linear light source, and controlling a light emitting direction without reducing the area of a light emitting layer.SOLUTION: A light emitting diode structure is formed by a p-type semiconductor layer 11, the light emitting layer 12 and an n-type semiconductor layer 13. A p-side electrode 15 is formed on a surface of the p-type semiconductor layer 11 on the side opposite to the light emitting layer 12. A reflection layer 16 is formed on end surfaces 14 of the p-type semiconductor layer 11, the light emitting layer 12 and the n-type semiconductor layer 13. An n-side electrode 17 with a pin hole 17a formed in its center part is formed on the n-type semiconductor layer 13 and the reflection layer 16. A light condensing lens 18 is formed on the n-side electrode 17.
摘要翻译：要解决的问题：提供一种获得点状或线性光源的发光二极管，并且控制发光方向而不减少发光层的面积。解决方案：发光二极管结构由p型半导体层11，发光层12和n型半导体层13.在p型半导体层11的与发光层12相反的一侧的表面上形成p侧电极15.反射层 16形成在p型半导体层11，发光层12和n型半导体层13的端面14上。在其中心部分形成有具有销孔17a的n侧电极17形成在 n型半导体层13和反射层16.在n侧电极17上形成聚光透镜18。

5. 发明专利

JP2011211014A Light emitting element, display device, display method, and electronic apparatus 审中-公开
标题翻译：发光元件，显示装置，显示方法和电子装置
公开(公告)号：JP2011211014A
公开(公告)日：2011-10-20
申请号：JP2010078238
申请日：2010-03-30
申请人： Sony Corp , ソニー株式会社
发明人： AOYANAGI HIDEKAZU , KAWASAKI TAKAHIKO , SO KEISHAKU
IPC分类号： H01L33/58 , G09G3/20 , G09G3/32
摘要： PROBLEM TO BE SOLVED: To obtain a light emitting element which can emit light with high efficiency while being focused on a normal line direction of a light emitting surface.SOLUTION: A light emitting element includes a light emitting layer 52, an interference layer (etalon 29) which is opposed to the light emitting layer 52 and interferes with normal light L1 progressing from the direction of the light emitting layer 52 in the normal line direction in such a manner that the light penetrates the interference layer (etalon 29), a reflection layer 55 which is formed at the opposite side of the light emitting layer 52 from the interference layer and reflects light from the direction of the light emitting layer 52, and a scattering structure (scattering layer 43) arranged between the interference layer (etalon 29) and the reflection layer 55.
摘要翻译：要解决的问题：获得能够在聚焦在发光表面的法线方向上的同时高效发光的发光元件。解决方案：发光元件包括发光层52，干涉层（标准具 29），其与发光层52相对并且以使得光穿过干涉层（标准杆29）的方式与沿着法线方向从发光层52的方向前进的正常光L1干涉，反射层55形成在发光层52的与干涉层的相反侧并反射来自发光层52的方向的光，以及布置在干涉层（标准具29）之间的散射结构（散射层43）和反射层55。

6. 发明专利

JP2010171167A Light emitting element 有权
标题翻译：发光元件
公开(公告)号：JP2010171167A
公开(公告)日：2010-08-05
申请号：JP2009011692
申请日：2009-01-22
申请人： Sony Corp , ソニー株式会社
发明人： AOYANAGI HIDEKAZU
IPC分类号： H01L33/00 , H01L33/36
CPC分类号： H01L33/44 , H01L27/15 , H01L33/38 , H01L2933/0016
摘要： PROBLEM TO BE SOLVED: To sufficiently ensure ESD resistance by improving insulation breakdown voltage than the conventional structure without inducing the reduction of light volume or the enlargement of entire element, or the like. SOLUTION: In the light emitting element, a first conductive type semiconductor layer 12, a light emitting functional layer 13 and a second conductive type semiconductor layer 14 are stacked in order on a substrate 11, and an electrode 15 for first conductive type is conducted to an exposed part on the first conductive type semiconductor layer 12 and an electrode 16 for second conductive type is conducted to the second conductive type semiconductor layer 14, and then the light emitting functional layer 13, the second conductive type semiconductor layer 14 and the electrode 16 for second conductive type and the electrode 15 for first conductive type are insulated by an insulation layer 17. An attached insulation layer 18 is attached to the insulation layer 17. Thanks to the attachment of the attached insulation layer 18, a virtual diode is configured so as to have a reverse-direction rectification function to a diode comprised of the second conduction type semiconductor layer, the light emitting functional layer and the first conductive type semiconductor layer. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过提高绝缘击穿电压来充分确保ESD阻力，而不会导致光体积的减小或整个元件的放大等。解决方案：在发光元件中，第一导电类型半导体层12，发光功能层13和第二导电类型半导体层14依次层叠在基板11上，第一导电类型的电极15 被引导到第一导电类型半导体层12上的暴露部分，并且用于第二导电类型的电极16被引导到第二导电类型半导体层14，然后将发光功能层13，第二导电类型半导体层14和用于第二导电类型的电极16和用于第一导电类型的电极15由绝缘层17绝缘。附着的绝缘层18附接到绝缘层17.由于附着的绝缘层18，虚拟二极管被配置为具有对由第二导电类型半导体层构成的二极管的反向整流功能发射功能层和第一导电类型半导体层。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009266833A Semiconductor light-emitting element, its manufacturing method, laminated structure and its forming method 有权
标题翻译：半导体发光元件及其制造方法，层压结构及其形成方法
公开(公告)号：JP2009266833A
公开(公告)日：2009-11-12
申请号：JP2008110541
申请日：2008-04-21
申请人： Sony Corp , ソニー株式会社
发明人： OHASHI TATSUO , AOYANAGI HIDEKAZU
IPC分类号： H01L33/06 , H01L33/32 , H01L33/36 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element provided with an electrode having a structure which has a high reflectance ratio, is thermally stable and stably and securely performs patterning by a wet etching method, for example. SOLUTION: The semiconductor light-emitting element includes a first compound semiconductor layer 11 having n-type conductivity, an active layer 13, a second compound semiconductor layer 12 having p-type conductivity, a first electrode 14 and a second electrode 20. The second electrode 20 includes a laminated structure of the first layer 21 and the second layer 22. Composition of the first layer 21 which is mainly constituted of silver differs from that of the second layer 22. The second layer 22 is formed of a silver alloy containing 0.1 wt.% to 3 wt.% of paladium and 0.1 wt.% to 3 wt.% of one type of element selected from a group composed of copper, aluminum, gold, platina, tantalum, chromium, titanium, nickel, cobalt and silicon. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有具有高反射率的结构的电极的半导体发光元件，例如通过湿式蚀刻方法热稳定且稳定且可靠地进行图案化。解决方案：半导体发光元件包括具有n型导电性的第一化合物半导体层11，有源层13，具有p型导电性的第二化合物半导体层12，第一电极14和第二电极20 第二电极20包括第一层21和第二层22的层叠结构。主要由银构成的第一层21的组成与第二层22的组成不同。第二层22由银含有0.1重量％至3重量％的铑和0.1重量％至3重量％的选自铜，铝，金，铂，钽，铬，钛，镍，钴和硅。版权所有（C）2010，JPO＆INPIT

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