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1. 发明专利

JP2007116097A Light-emitting diode and method for manufacturing the same, integrated light-emitting diode and nethod for making the same, method for growing nitride-based group iii-v compound semiconductor, substrate for growing nitride-based group iii-v compound semiconductor, light source cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display, electric instrument, and electric device and method for manufacturing the same 有权
标题翻译：发光二极管及其制造方法，用于制造其的集成发光二极管和网络，用于生长基于氮化物的III-V族化合物半导体的方法，用于生长基于氮化物的III-V族化合物半导体的基板，光源单元，发光二极管背光，发光二极管照明装置，发光二极管显示器，电子仪器和电气装置及其制造方法
公开(公告)号：JP2007116097A
公开(公告)日：2007-05-10
申请号：JP2006215342
申请日：2006-08-08
申请人： Sony Corp , ソニー株式会社
发明人： OMAE AKIRA , SHIOMI HARUNORI , KAZETAGAWA MUNEYUKI , AMI TAKAAKI , MIYAJIMA TAKAO , HIRAMATSU YUJI , HATADA IZUHO , OKANO NOBUKATA , TOMITANI SHIGETAKA , YANASHIMA KATSUNORI , HINO TOMOKIMI , NARUI HIRONOBU
IPC分类号： H01L33/08 , C30B29/38 , H01L21/205 , H01L33/16 , H01L33/32
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting diode which emits light efficiently and which can be manufactured at low costs by a single epitaxial growth, and to provide a manufacturing method of the same. SOLUTION: A substrate 11 having a plurality of protrusions 12 is formed on one main surface of the substrate 11 such as a sapphire substrate wherein the protrusion 12 is made of a material different in type from that of the substrate, an SiO 2 film e.g., and a first nitride-based group III-V compound semiconductor layer 15 is grown on each recess 13 between the protrusions 12 until making a triangle in section wherein a bottom surface of the recess becomes a base of the triangle. Thereafter, a second nitride-based group III-V compound semiconductor layer 15 is laterally grown on the substrate from the first nitride-based group III-V compound semiconductor layer 15. The protrusions 12 are triangular or trapezoidal e.g. in section. On the second nitride-based group III-V compound semiconductor layer 15, a third nitride-based group III-V compound semiconductor layer 15 including an active layer and a nitride-based group III-V compound semiconductor layer 15 are formed. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种有效发光并且可以通过单次外延生长以低成本制造的发光二极管，并提供其制造方法。解决方案：具有多个突起12的基板11形成在诸如蓝宝石基板的基板11的一个主表面上，其中突起12由与基板不同的材料制成， SB> 2 膜，并且在突起12之间的每个凹部13上生长第一氮化物基III-V族化合物半导体层15，直到形成三角形，其中凹部的底表面成为基底的三角形。此后，第二氮化物基III-V族化合物半导体层15从第一氮化物基III-V族化合物半导体层15横向生长在衬底上。突起12是三角形或梯形的。在部分。在第二氮化物基III-V族化合物半导体层15上，形成包括有源层和氮化物基III-V族化合物半导体层15的第三氮化物基III-V族化合物半导体层15。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2009246393A Light-emitting diode and method of manufacturing the same, integrated light-emitting diode and method of manufacturing the same, method of growing nitride group iii-v compound semiconductor and substrate for growing ntride group iii-v compound semiconductor, luminous-source cell unit, backlight, lighting device and display for light-emitting diode, electronic apparatus, and electronic apparatus and method of manufacturing the same 有权
标题翻译：发光二极管及其制造方法，一体化发光二极管及其制造方法，用于生长氮化物III-V族化合物半导体的方法和用于生长NTR组III-V族化合物半导体，LUMINOUS-SOURCE电池单元的底物用于发光二极管的背光，照明装置和显示器，电子设备和电子设备及其制造方法
公开(公告)号：JP2009246393A
公开(公告)日：2009-10-22
申请号：JP2009174008
申请日：2009-07-27
申请人： Sony Corp , ソニー株式会社
发明人： OMAE AKIRA , SHIOMI HARUNORI , KAZETAGAWA MUNEYUKI , AMI TAKAAKI , MIYAJIMA TAKAO , HIRAMATSU YUJI , HATADA IZUHO , OKANO NOBUKATA , TOMITANI SHIGETAKA , YANASHIMA KATSUNORI , HINO TOMOKIMI , NARUI HIRONOBU
IPC分类号： H01L33/06 , H01L33/08 , H01L33/16 , H01L33/22 , H01L33/32 , H01L33/40 , H01L33/62
CPC分类号： H01L2224/48091 , H01L2224/48465 , H01L2924/1305 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting diode with extremely high luminous efficiency, capable of being manufactured at low cost through a single processing of an epitaxial growth, and to provide a method of manufacturing the same. SOLUTION: A protrusion 12 is formed on one principal surface of a substrate 11, such as a sapphire substrate and the like, by means of a material different from that of the substrate 11. A nitride group III-V compound semiconductor layer 15 is grown up in a recess 13 having an invesely trapezoidal shape at both sides of the protrusion 12, in such structure as a pentagon-shaped sectional form by way of a triangular sectional form with the bottom of the recess 13 as the base of a triangle. Otherwise, the nitride group III-V compound semiconductor layer 15 is grown up in the lateral direction, after it is grown up to the triangular sectional shape with the bottom of the recess 13 as its base. The nitride group III-V compound semiconductor layer 15 with an active layer contained therein is grown up on the nitride group III-V compound semiconductor to constitute the structure of a light-emitting diode. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有极高发光效率的发光二极管，能够通过外延生长的单一处理以低成本制造，并提供其制造方法。解决方案：通过不同于衬底11的材料，在诸如蓝宝石衬底等的衬底11的一个主表面上形成突起12.氮化物III-V族化合物半导体层在突出部12的两侧的长度方向成长的凹部13中，以凹凸部13的底部为三角形的三角形截面形状为五边形的结构，三角形。否则，氮化物III-V族化合物半导体层15在以凹槽13的底部为基底的三角形截面形状之后，沿横向长大。其中含有活性层的氮化物III-V族化合物半导体层15在氮化物III-V族化合物半导体上生长，以构成发光二极管的结构。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2006135208A Method for manufacturing diffusion region of rare earth element ion, light-emitting diode, and method for manufacturing the same 有权
标题翻译：用于制造稀土元素离子扩散区的方法，发光二极管及其制造方法
公开(公告)号：JP2006135208A
公开(公告)日：2006-05-25
申请号：JP2004324641
申请日：2004-11-09
申请人： Sony Corp , ソニー株式会社
发明人： YASUDA TOSHIKAZU , OMAE AKIRA , KAZETAGAWA MUNEYUKI , HATADA IZUHO , YANASHIMA KATSUNORI
IPC分类号： H01L33/06 , H01L33/34
摘要： PROBLEM TO BE SOLVED: To enable control of the desired position of the concentration distribution peak values of rare earth element ions and adjustment of the luminous intensity of a light-emitting element, by keeping the rare earth element ions in a predetermined distribution conditions and moving the diffusion region of rare earth element ions in a substrate depthwise direction through heat treatment. SOLUTION: A manufacturing method comprises the steps of forming a diffusion region 16 of rare earth element ions, having a predetermined distribution in a substrate 11, and keeping rare earth element ions in a state of predetermined distribution and making the diffusion region 16 of rare earth element ions move, in the depthwise direction of the substrate 11 through heat treatment. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了控制稀土元素离子的浓度分布峰值的期望位置和通过将稀土元素离子保持在预定分布中调节发光元件的发光强度通过热处理在衬底深度方向上移动稀土元素离子的扩散区域。解决方案：一种制造方法包括以下步骤：在衬底11中形成具有预定分布的稀土离子的扩散区16，并将稀土元素离子保持在预定分布的状态，并使扩散区16 的稀土元素离子通过热处理在基板11的深度方向上移动。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2003282013A Electronic gun for cathode-ray tube and cathode structural body 审中-公开
标题翻译：电子管和阴极结构体的电子枪
公开(公告)号：JP2003282013A
公开(公告)日：2003-10-03
申请号：JP2002079209
申请日：2002-03-20
申请人： Sony Corp , ソニー株式会社
发明人： HATADA IZUHO
IPC分类号： H01J29/04
摘要： PROBLEM TO BE SOLVED: To aim at suppressing leak currents between cathodes caused by evaporation of thermionic emitting material (Ba, BaO or the like) in acting at an electronic gun for a cathode-ray tube.
SOLUTION: This electronic gun is comprised that a plurality of cathode main bodies KR, KG, and KB are supported by an insulation supporting body 41, and that this has a cathode structural body 42 composed that electroconductive members (49G
1 , 49G
2 ) and (49R
1 , 49R
2 , 49B
1 , 49B
2 ) comprised to be fixed to the insulation supporting body 41 by respectively glass-soldered from mutually opposite side faces of the insulation supporting body 41.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了抑制在用于阴极射线管的电子枪上作用的热离子发射材料（Ba，BaO等）的蒸发引起的阴极之间的泄漏电流。解决方案：该电子枪包括多个阴极主体KR，KG和KB由绝缘支撑体41支撑，并且其具有阴极结构体42，阴极结构体42由导电构件（49G 49B 2 ，49G 2 ）和49R 1 ，49R SB / 通过分别从绝缘支撑体41的相互相对的侧面玻璃焊接而被固定到绝缘支撑体41上。（C）2004，JPO

5. 发明专利

JP2009188085A Growth method of single-crystal oxychalcogenide system thin film, semiconductor laminated structure, and method for manufacturing semiconductor device, and the semiconductor device 审中-公开
标题翻译：单晶氧化硅系统薄膜的生长方法，半导体层压结构及制造半导体器件的方法及半导体器件
公开(公告)号：JP2009188085A
公开(公告)日：2009-08-20
申请号：JP2008024883
申请日：2008-02-05
申请人： Sony Corp , ソニー株式会社
发明人： YOKOZEKI MIKIHIRO , SHIOMI HARUNORI , HATADA IZUHO , YANASHIMA KATSUNORI
IPC分类号： H01L21/36 , C23C14/06 , C23C16/30 , C30B23/08 , C30B25/02 , C30B29/22 , H01L21/363 , H01L21/365 , H01L33/28
CPC分类号： H01L21/02565 , H01L21/02403 , H01L21/02483 , H01L21/02485 , H01L21/02568
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a single-crystal oxychalcogenide system thin film, capable of making grown a proper quality single-crystal oxychalcogenide system thin film having a precipitous interface between thin films. SOLUTION: An amorphous oxychalcogenide system thin film 102 is grown on a substrate 101 comprising a YSZ substrate, a MgO substrate, or the like, by the pulse laser deposition method and the sputtering method, and a single-crystal oxychalcogenide system thin film 103 is formed by crystallizing the amorphous oxychalcogenide system thin film 102 by the reactive solid-phase epitaxial growth method. A crystal oxychalcogenide thin film 104 is grown on the single-crystal oxychalcogenide system thin film 103 by the solution vaporization CVD method from an early phase of the epitaxial growth. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长单晶氧化硫系体系薄膜的方法，其能够生长具有在薄膜之间具有沉淀界面的合适质量的单晶氧化硫系体系薄膜。解决方案：通过脉冲激光沉积法和溅射法，在包含YSZ衬底，MgO衬底等的衬底101上生长无定形氧化硫系体系薄膜102，并且将单晶氧化硫化物体系薄膜103通过用反应性固相外延生长法使无定形氧化硫系体系薄膜102结晶而形成。从外延生长的早期阶段，通过溶液蒸发CVD法在单晶氧化硫系体系薄膜103上生长氧化硫化物氧化物薄膜104。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008198614A Light-emitting element and its manufacturing method, and light-emitting device 审中-公开
标题翻译：发光元件及其制造方法和发光装置
公开(公告)号：JP2008198614A
公开(公告)日：2008-08-28
申请号：JP2008055879
申请日：2008-03-06
申请人： Sony Corp , ソニー株式会社
发明人： YASUDA TOSHIKAZU , OMAE AKIRA , KAZETAGAWA MUNEYUKI , HATADA IZUHO , MEMESAWA SATOHIKO , YANASHIMA KATSUNORI , NARUI HIRONOBU
IPC分类号： H05B33/14 , B82B1/00 , B82B3/00 , C25D11/32 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element capable of obtaining a light emission wavelength having large light emission intensity, and furthermore having a narrow half-value width. SOLUTION: The light-emitting element 30 is equipped with a light-emitting layer 40 formed on a substrate 31. The light-emitting layer 40 is composed of quantum dots 41 as well as rare earth atoms 43 which is adhered to a surface of the quantum dots 41, and/or contained interior of the quantum dots 41. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够获得具有大的发光强度的发光波长的发光元件，并且还具有窄的半值宽度。
解决方案：发光元件30配备有形成在基板31上的发光层40.发光层40由量子点41以及稀土原子43组成，稀土原子43被粘附到量子点41的表面和/或包含量子点41的内部。版权所有：（C）2008，JPO＆INPIT

7. 发明专利

JP2007277604A Facing target type sputtering apparatus 审中-公开
标题翻译：目标类型的飞溅设备
公开(公告)号：JP2007277604A
公开(公告)日：2007-10-25
申请号：JP2006102752
申请日：2006-04-04
申请人： Sony Corp , ソニー株式会社
发明人： HATADA IZUHO , YANASHIMA KATSUNORI
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a facing target type sputtering apparatus which can easily control the composition of a thin film to be formed and form a desired functional thin film. SOLUTION: The facing target type sputtering apparatus 10 has a sputtering source comprising a plurality of facing target units 3a, 3b and 3c, has a substrate 11 arranged above the facing target units 3a, 3b and 3c, and makes the facing target units 3a, 3b and 3c simultaneously operate to form the thin film on the substrate 11 through sputtering the targets. The facing target units 3a, 3b and 3c have different compositions from each other. The apparatus 10 controls a composition ratio of the thin film by adjusting an array pattern of each of the facing target units 3a, 3b and 3c with respect to the substrate 11 and a voltage applied to each of the facing target units 3a, 3b and 3c. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够容易地控制要形成的薄膜的组成并形成期望的功能性薄膜的面向目标的溅射装置。解决方案：面向目标型溅射装置10具有包括多个面向目标单元3a，3b和3c的溅射源，具有布置在面对目标单元3a，3b和3c上方的基板11，并且使面对目标单元3a，3b和3c同时操作以通过溅射靶在衬底11上形成薄膜。面对目标单元3a，3b和3c具有彼此不同的组成。设备10通过相对于基板11调整每个面对目标单元3a，3b和3c的阵列图案以及施加到每个面向目标单元3a，3b和3c的电压来控制薄膜的组成比。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2005015831A Barium whisker, method of producing barium whisker, field emission type element, method of producing field emission type element, electron gun and display 审中-公开
标题翻译：棒式洗衣机，生产玻璃杯的方法，场发射型元件，生产场发射型元件的方法，电子枪和显示器
公开(公告)号：JP2005015831A
公开(公告)日：2005-01-20
申请号：JP2003180604
申请日：2003-06-25
申请人： Sony Corp , ソニー株式会社
发明人： HASEGAWA YOJI , HATADA IZUHO
IPC分类号： C23C14/14 , H01J1/304 , H01J9/02 , H01J29/48 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide an electron emission source which can be formed to a high density by a simple production method, to provide a field emission type element obtained by using the electron emission source, and to provide an electron gun and a display obtained by using them. SOLUTION: The barium whiskers are formed by film-depositing barium or a barium compound on a substrate by a vapor deposition method or a sputtering method using the barium or barium compound as a film deposition source on substrates, and further growing the barium from the barium in the deposited film. The field emission type element is obtained by using the barium whiskers as an electron emission source. The electron gun and display such as FED (Field Emission Display) are obtained by using the field emission type element. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了提供可以通过简单的制备方法形成为高密度的电子发射源，以提供通过使用电子发射源获得的场致发射型元件，并提供电子枪和通过使用它们获得的显示。解决方案：通过使用钡或钡化合物作为膜沉积源的基板上的气相沉积法或溅射法，在基板上成膜钡或钡化合物来形成钡晶须，并进一步生长钡从沉积膜中的钡。通过使用钡晶须作为电子发射源获得场发射型元件。通过使用场发射型元件获得电子枪和诸如FED（场发射显示）的显示器。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2015012005A 半導体装置审中-公开
标题翻译：半导体器件
公开(公告)号：JP2015012005A
公开(公告)日：2015-01-19
申请号：JP2013133772
申请日：2013-06-26
申请人：ソニー株式会社 , Sony Corp
发明人： HATADA IZUHO , OTORII SUGURU , OKA SHUICHI , YANAGAWA SHUSAKU
IPC分类号： H05K3/34 , H05K1/18
CPC分类号： H01L23/552 , H01L23/13 , H01L23/3157 , H01L23/49838 , H01L24/05 , H01L24/13 , H01L24/799 , H01L24/98 , H01L29/0657 , H01L2224/02331 , H01L2224/0235 , H01L2224/0401 , H01L2224/05008 , H01L2224/05023 , H01L2224/05111 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05184 , H01L2224/05548 , H01L2224/05552 , H01L2224/05568 , H01L2224/05583 , H01L2224/05611 , H01L2224/05655 , H01L2224/05666 , H01L2224/05669 , H01L2224/05684 , H01L2224/0603 , H01L2224/0612 , H01L2224/131 , H01L2224/16225 , H01L2224/16238 , H01L2224/17106 , H01L2924/00014 , H01L2924/00012 , H01L2924/014
摘要：【課題】故障した半導体素子を除去する際に、周囲に実装されている正常な半導体素子が故障してしまったり、正常な半導体素子までが除去されてしまう。【解決手段】基板側電極が配置されたベース基板と、基板側電極にはんだを介して電気的に接続されたチップ側電極を有し下面側に光吸収層が形成された半導体素子とを備えた。これにより、レーザ光を上方から照射した際に光吸収層で発生する熱を利用してはんだを溶解させ、故障した半導体素子のみを除去するようにした。【選択図】図4
摘要翻译：要解决的问题：为了解决当去除故障的半导体元件时，安装在周边的普通半导体元件断裂或正常半导体元件与故障半导体元件一起被去除的问题。解决方案：半导体器件包括：其上配置有基板侧电极的基底基板; 以及半导体元件，其具有通过焊料与基板侧电极电连接的芯片侧电极，并且在下表面侧设置有光吸收层。利用这种构造，当从上方照射激光时，利用在光吸收层处产生的热量来熔化焊料，并且仅去除故障半导体元件。

10. 发明专利

JP2006282890A Luminant, manufacturing method and manufacturing apparatus for the same, and light emitting element or apparatus 审中-公开
标题翻译：发光体，制造方法和制造方法及其发光元件或装置
公开(公告)号：JP2006282890A
公开(公告)日：2006-10-19
申请号：JP2005105643
申请日：2005-04-01
申请人： Sony Corp , ソニー株式会社
发明人： HATADA IZUHO
IPC分类号： C09K11/79 , C09K11/00 , C09K11/08 , C23C14/08 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide a luminant which is always formed in desired composition by co-sputter using a stable target material, a manufacturing method and a manufacturing apparatus for the same, and a light emitting element or apparatus.
SOLUTION: The EuxSiyOz luminant layer comprises a crystal of a europium silicate compound expressed by the chemical formula: EuxSiyOz (wherein, x is 10-40%, y is 20-72% and z is 12-60%). A sputtering apparatus using a complex target of a silicon target 2 and an Eu
2 O
3 sintering member 1 in order to deposit this luminant by co-sputtering is provided. The light emitting element or apparatus using this luminant is provided.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供总是通过使用稳定的靶材料的共溅射形成期望的组成的发光体，其制造方法和制造装置，以及发光元件或装置。解决方案：EuxSiyOz发光体层包含由以下化学式表示的硅酸铕化合物的晶体：EuxSiyOz（其中x为10-40％，y为20-72％，z为12-60％）。提供了使用硅靶2和Eu 2 S 3 O 3 SB 3烧结体1的复合靶的溅射装置，以便通过共溅射沉积该发光体。提供使用该发光体的发光元件或装置。版权所有（C）2007，JPO＆INPIT

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