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1. 发明专利

JP2011009393A Thin-film transistor, method of manufacturing thin-film transistor, and display device 审中-公开
标题翻译：薄膜晶体管，制造薄膜晶体管的方法和显示器件
公开(公告)号：JP2011009393A
公开(公告)日：2011-01-13
申请号：JP2009150446
申请日：2009-06-25
申请人： Sony Corp , ソニー株式会社
发明人： MIYASHITA HIROKO , TANIGUCHI OSAMU , YAMAGUCHI NORIHIKO
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a thin-film transistor for surely preventing fluctuation of oxygen content in a semiconductor layer comprising oxide and characteristic fluctuation due to moisture adsorption, along with its manufacturing method.SOLUTION: The thin-film transistor includes an oxide semiconductor layer 7 comprising oxide which is provided on a substrate 1, and an upper layer insulating film 9 which is formed continuously from the oxide semiconductor layer 7, on the oxide semiconductor layer 7. The outer peripheral edges of the oxide semiconductor layer 7 and the upper layer insulating film 9 are arranged to keep intervals d1-d4 of 13 μm or more from a channel region 7ch formed in the oxide semiconductor layer 7. By this configuration, the effect of moisture adsorption and entrance/leaving of oxygen from the outside of outer peripheral edge is prevented from affecting the channel region 7ch.
摘要翻译：要解决的问题：提供一种薄膜晶体管，其可靠地防止包含氧化物的半导体层中的氧含量的波动以及由于吸湿引起的特性波动及其制造方法。解决方案：薄膜晶体管包括氧化物半导体包含设置在基板1上的氧化物的层7和在氧化物半导体层7上连续形成的上层绝缘膜9.氧化物半导体层7和上部的外周边缘层状绝缘膜9被布置成从形成在氧化物半导体层7中的沟道区7ch保持间隔d1-d4为13μm以上的间隔。通过这种构造，从外部的外部吸收和进入氧的作用防止外围边缘影响通道区域7ch。

2. 发明专利

JP2010205987A Thin film transistor, method for manufacturing the same, and display 审中-公开
标题翻译：薄膜晶体管，其制造方法和显示器
公开(公告)号：JP2010205987A
公开(公告)日：2010-09-16
申请号：JP2009050741
申请日：2009-03-04
申请人： Sony Corp , ソニー株式会社
发明人： YAMAGUCHI NORIHIKO , TANIGUCHI OSAMU , MIYASHITA HIROKO , TERAI YASUHIRO
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor for suppressing diffusion of aluminum into oxide semiconductor and etching selectively oxide semiconductor and aluminum oxide. SOLUTION: A gate electrode 13, a gate insulating film 14, a channel layer 15 and a sealing layer 16 are provided on a substrate 11. The channel layer 15 is formed of a conductive oxide semiconductor. The sealing layer 16 includes a first insulating film 16a and a second insulating film 16b. The first insulating film 16a is formed of aluminum oxide (Al 2 O 3 ). The second insulating film 16b includes a function to inhibit the diffusion of aluminum (Al) in the first insulating film 16a into the channel layer 15. The second insulating film 16b consists of a material (silicon oxide (SiO x ), and silicon nitride (SiN x ) etc.) having excellent etching selectivity by same gas or solution to oxide semiconductor constituting the channel layer 15 and the first insulating material respectively. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种薄膜晶体管，用于抑制铝向氧化物半导体的扩散，并选择性地蚀刻氧化物半导体和氧化铝。解决方案：栅极电极13，栅极绝缘膜14，沟道层15和密封层16设置在基板11上。沟道层15由导电氧化物半导体形成。密封层16包括第一绝缘膜16a和第二绝缘膜16b。第一绝缘膜16a由氧化铝（Al 2 3 ）形成。第二绝缘膜16b包括抑制第一绝缘膜16a中的铝（Al）扩散到沟道层15中的功能。第二绝缘膜16b由材料（氧化硅（SiO x ）和氮化硅（SiN x SB）等），其分别由构成沟道层15和第一绝缘材料的氧化物半导体的相同气体或溶液的蚀刻选择性优异。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2011138934A Thin film transistor, display device, and electronic equipment 审中-公开
标题翻译：薄膜晶体管，显示器件和电子设备
公开(公告)号：JP2011138934A
公开(公告)日：2011-07-14
申请号：JP2009298103
申请日：2009-12-28
申请人： Sony Corp , ソニー株式会社
发明人： TANIGUCHI OSAMU , YOKOZEKI MIKIHIRO , MIYASHITA HIROKO , SUZUKI JUICHI
IPC分类号： H01L29/786 , C01G15/00 , G02F1/1368 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78693
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor improving mobility of carriers, and a display device and electronic equipment using such a thin film transistor. SOLUTION: An oxide semiconductor layer 15 is constituted of a multilayer film including: a carrier transit layer 151 constituting a channel; and a carrier supply layer 152. A conduction band lower end level Ec2 in the carrier supply layer 152 is set to become energetically higher than a conduction band lower end level Ec1 in the carrier transit layer 151 (Ec2>Ec1). Carriers (electrons) are supplied from the carrier supply layer 152 to the carrier transit layer 151, allowing the electrons to be accumulated in an area near an interface with the carrier supply layer 152 inside the carrier transit layer 151. Thus, transit scattering with respect to the electrons is inhibited as compared with conventional techniques. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供提高载流子迁移率的薄膜晶体管，以及使用这种薄膜晶体管的显示装置和电子设备。解决方案：氧化物半导体层15由多层膜构成，包括：构成沟道的载流子迁移层151; 和载流子供给层152.载流子供给层152中的导带下端电平Ec2被设定为高于载流子传输层151（Ec2> Ec1）中的导带下端电平Ec1。载体（电子）从载体供给层152提供到载流子迁移层151，允许电子积聚在载流子输送层151内部与载体供给层152的界面附近的区域中。因此，相对于与传统技术相比，电子被抑制。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2013026082A Photoelectric conversion device, electronic apparatus, and building 审中-公开
标题翻译：光电转换装置，电子装置和建筑物
公开(公告)号：JP2013026082A
公开(公告)日：2013-02-04
申请号：JP2011161195
申请日：2011-07-22
申请人： Sony Corp , ソニー株式会社
发明人： ORIHASHI MASAKI , MIYASHITA HIROKO , KUMAGAI KIYOSHI , MATSUDA KENJI , SATORI KOTARO
IPC分类号： H01M14/00 , C07F9/38 , C09B57/10 , E06B5/00 , H01L31/04
CPC分类号： H01G9/2059 , C09B57/10 , C09B67/0086 , H01G9/2031 , H01L51/0086 , Y02B10/10 , Y02E10/542 , Y02T10/7022
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric conversion device, an electronic apparatus, and a building which are capable of suppressing long-term deterioration in performance by suppressing desorption and aggregation of a dye.SOLUTION: The photoelectric conversion device includes a conductive layer, a porous semiconductor layer, a counter electrode, and an electrolyte layer. The porous semiconductor layer contains a dye and a phosphorus compound such as a decylphosphonic acid. A molar ratio of the phosphorus compound to the dye is 0.5 or more.
摘要翻译：解决的问题：提供能够通过抑制染料的解吸和聚集而抑制性能的长期劣化的光电转换装置，电子设备和建筑物。解决方案：光电转换装置包括导电层，多孔半导体层，对电极和电解质层。多孔半导体层含有染料和磷化合物如癸基膦酸。磷化合物与染料的摩尔比为0.5以上。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012212615A Method for manufacturing photoelectric conversion element, photoelectric conversion element, and electronic apparatus 审中-公开
标题翻译：制造光电转换元件，光电转换元件和电子设备的方法
公开(公告)号：JP2012212615A
公开(公告)日：2012-11-01
申请号：JP2011078413
申请日：2011-03-31
申请人： Sony Corp , ソニー株式会社
发明人： MIYASHITA HIROKO , TAKAGI HIROTAKA , MOROOKA MASAHIRO , MORIKAWA SHINICHIRO
IPC分类号： H01M14/00 , H01L31/04
CPC分类号： H01B1/16 , C03C8/04 , C03C8/18 , H01G9/2031 , H01G9/2059 , H01G9/2068 , H01G9/2081 , H01L51/445 , Y02E10/542 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a photoelectric conversion element in which, when a porous electrode is formed by calcination, silver particles constituting current collector wiring are effectively prevented from fluidizing, and the occurrence of wiring failure is prevented, and to provide the photoelectric conversion element.SOLUTION: When manufacturing a photoelectric conversion element having a structure in which an electrolyte layer 10 provided between a porous electrode 5 provided on a transparent conductive layer 2 of a transparent substrate 1 and a counter electrode 8, current collector wiring 3 is formed by a conductive paste containing silver particles and low-melting-point glass frits on the transparent conductive layer 2. In a dye-sensitized photoelectric conversion element, a photosensitization dye is bonded to the surface of the porous electrode 5.
摘要翻译：解决问题的方案：提供一种光电转换元件的制造方法，其中，通过煅烧形成多孔电极时，有效地防止构成集电体配线的银粒子流态化，防止发生接线故障，并提供光电转换元件。解决方案：当制造具有设置在设置在透明基板1的透明导电层2上的多孔电极5和对电极8之间的电解质层10的结构的光电转换元件时，形成集电布线3 通过在透明导电层2上含有银粒子和低熔点玻璃料的导电糊料。在染料敏化光电转换元件中，将光敏染料结合到多孔电极5的表面。版权所有：（C）2013，JPO＆INPIT

6. 发明专利

JP2012113941A Photoelectric conversion device and method 审中-公开
标题翻译：光电转换装置及方法
公开(公告)号：JP2012113941A
公开(公告)日：2012-06-14
申请号：JP2010261394
申请日：2010-11-24
申请人： Sony Corp , ソニー株式会社
发明人： MIYASHITA HIROKO , TAKAGI HIROTAKA
IPC分类号： H01M14/00 , H01L31/04
CPC分类号： Y02E10/542
摘要： PROBLEM TO BE SOLVED: To make more efficient power generation possible in a photoelectric conversion device.SOLUTION: A light quantity measurement unit 110 determines in step S21 whether a received quantity of light has changed exceeding a threshold and stands by waiting until the quantity of light is determined to have changed exceeding the threshold. In step S22, the light quantity measurement unit 110 identifies the level of a received quantity of light. In step S23, the light quantity measurement unit 110 outputs a control signal corresponding to the level identified in step S22. In step S24, movable power collection bars 103 are moved according to the control signal. For example, if a control signal corresponding to level 3 is output, the movable power collection bars 103 are moved so that five of them are exposed to a light-receiving surface, and, if a control signal corresponding to level 2 is output, the movable power collection bars 103 are moved so that three of them are exposed to the light-receiving surface. At this time, the movable power collection bars 103 are moved so as to be most suitably spaced one another.
摘要翻译：要解决的问题：在光电转换装置中可以实现更有效的发电。解决方案：光量测量单元110在步骤S21中确定接收到的光量是否已经改变超过阈值，并等待直到确定光量已经改变超过阈值为止。在步骤S22中，光量测量单元110识别所接收的光量的水平。在步骤S23中，光量测量单元110输出与步骤S22中识别的电平对应的控制信号。在步骤S24中，根据控制信号移动可动集电棒103。例如，如果输出对应于级别3的控制信号，则可移动集电棒103被移动，使得其中的五个暴露于光接收表面，并且如果输出对应于级别2的控制信号，移动动力收集杆103被移动，使得它们中的三个暴露于光接收表面。此时，可移动集电棒103被移动以最适当地彼此间隔开。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011187426A Dye-sensitized photoelectric conversion device 审中-公开
标题翻译：感光敏感光电转换装置
公开(公告)号：JP2011187426A
公开(公告)日：2011-09-22
申请号：JP2010054731
申请日：2010-03-11
申请人： Sony Corp , ソニー株式会社
发明人： HITSUDA YUKIHISA , YONEYA REIKO , ISSHIKI YUSUKE , MIYASHITA HIROKO
IPC分类号： H01M14/00 , H01L31/04
CPC分类号： Y02E10/542
摘要： PROBLEM TO BE SOLVED: To provide a dye-sensitized photoelectric conversion device having high photoelectric conversion rate. SOLUTION: A dye-sensitized photoelectric conversion device 10 includes a semiconductor layer 3 and photosensitizing dye. The semiconductor layer is composed of a titanium oxide doped with impurities which can take a pentavalent oxidation state. The photosensitizing dye is held in the semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT

8. 发明专利

JP2007297247A Method for forming oxycalcogenide-based semiconductor single crystal thin film and method for fabricating semiconductor device 审中-公开
标题翻译：形成基于氧化碳的半导体单晶薄膜的方法和制备半导体器件的方法
公开(公告)号：JP2007297247A
公开(公告)日：2007-11-15
申请号：JP2006127422
申请日：2006-05-01
申请人： Sony Corp , ソニー株式会社
发明人： SHIOMI HARUNORI , MIYASHITA HIROKO , YANASHIMA KATSUNORI
IPC分类号： C30B29/10 , C23C14/06 , C30B1/02 , H01L21/363
摘要： PROBLEM TO BE SOLVED: To provide a method for forming an oxycalcogenide-based semiconductor single crystal thin film by which the oxycalcogenide-based semiconductor single crystal thin film excellent in crystallinity can be formed on a large-area substrate.
SOLUTION: A non-single crystal AMOX-based thin film 12 (wherein, A is at least one element selected from the group consisting of lanthanoids and Y; M is at least one element selected from the group consisting of Cu and Cd; X is at least one element selected from the group consisting of S, Se and Te) is formed on the substrate 11. At least a part of the surface of the thin film is covered with powders consisting of a material containing at least one element selected from the group consisting of A, M and X. A pressed powder compact 17 obtained by pressing the powders is annealed in vacuum or an inert gas atmosphere and then a single crystal AMOX-based thin film is formed by crystallizing the non-single crystal AMOX-based thin film 12.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成基于氧化物半胱氨酸盐的半导体单晶薄膜的方法，通过该方法可以在大面积基板上形成结晶度优异的氧化碳化物系半导体单晶薄膜。解决方案：非单晶AMOX基薄膜12（其中，A为选自镧系元素和Y的至少一种元素; M为选自Cu和Cd中的至少一种元素 ; X是选自S，Se和Te中的至少一种元素）形成在基底11上。薄膜表面的至少一部分用包含至少一种元素的材料选自由A，M和X组成的组。通过压制粉末获得的压制粉末17在真空或惰性气体气氛中退火，然后通过使非单晶结晶化而形成单晶AMOX基薄膜 AMOX型薄膜12.版权所有（C）2008，JPO＆INPIT

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