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1. 发明专利

JP2009266833A Semiconductor light-emitting element, its manufacturing method, laminated structure and its forming method 有权
标题翻译：半导体发光元件及其制造方法，层压结构及其形成方法
公开(公告)号：JP2009266833A
公开(公告)日：2009-11-12
申请号：JP2008110541
申请日：2008-04-21
申请人： Sony Corp , ソニー株式会社
发明人： OHASHI TATSUO , AOYANAGI HIDEKAZU
IPC分类号： H01L33/06 , H01L33/32 , H01L33/36 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element provided with an electrode having a structure which has a high reflectance ratio, is thermally stable and stably and securely performs patterning by a wet etching method, for example. SOLUTION: The semiconductor light-emitting element includes a first compound semiconductor layer 11 having n-type conductivity, an active layer 13, a second compound semiconductor layer 12 having p-type conductivity, a first electrode 14 and a second electrode 20. The second electrode 20 includes a laminated structure of the first layer 21 and the second layer 22. Composition of the first layer 21 which is mainly constituted of silver differs from that of the second layer 22. The second layer 22 is formed of a silver alloy containing 0.1 wt.% to 3 wt.% of paladium and 0.1 wt.% to 3 wt.% of one type of element selected from a group composed of copper, aluminum, gold, platina, tantalum, chromium, titanium, nickel, cobalt and silicon. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有具有高反射率的结构的电极的半导体发光元件，例如通过湿式蚀刻方法热稳定且稳定且可靠地进行图案化。解决方案：半导体发光元件包括具有n型导电性的第一化合物半导体层11，有源层13，具有p型导电性的第二化合物半导体层12，第一电极14和第二电极20 第二电极20包括第一层21和第二层22的层叠结构。主要由银构成的第一层21的组成与第二层22的组成不同。第二层22由银含有0.1重量％至3重量％的铑和0.1重量％至3重量％的选自铜，铝，金，铂，钽，铬，钛，镍，钴和硅。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2008108816A Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：JP2008108816A
公开(公告)日：2008-05-08
申请号：JP2006288422
申请日：2006-10-24
申请人： Sony Corp , ソニー株式会社
发明人： WATABE YOSHIAKI , HINO TOMOKIMI , OKANO NOBUKATA , KURAMOCHI NAOYOSHI , OHASHI TATSUO
IPC分类号： H01L33/06 , H01L21/28 , H01L29/417 , H01L33/38 , H01L33/44
CPC分类号： H01L27/15 , H01L24/45 , H01L33/62 , H01L2224/0603 , H01L2224/45144 , H01L2224/48463 , H01L2924/12035 , H01L2924/12041 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element having a constitution and a structure being capable of reducing the area of a first electrode as much as possible and shouldering no large burden to an assembly process while having a high electrostatic breakdown preventive function. SOLUTION: The light-emitting element has a first compound semiconductor layer 11, an active layer 12, a second compound semiconductor layer 13, a second electrode 22 formed on approximately the whole surface of the top face of the second compound semiconductor layer 13 and an insulating layer 31 coating the second electrode 22. The light-emitting element further has a first opening section 23, a second opening section 24, a first electrode 21 formed on a part of the first compound semiconductor layer 11 exposed on the bottom of the first opening section 23, a first electrode extending section 21A extended on the insulating layer 31 through the first opening section 23 from the first electrode 21 and serving as a first pad section 25 and a second pad section 26 connected to the second electrode 22 and fitted to the second opening section 25. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种发光元件，其具有能够尽可能地减小第一电极的面积的结构和结构，并且在具有高静电击穿的同时不会对组装过程造成较大的负担预防功能。
解决方案：发光元件具有第一化合物半导体层11，有源层12，第二化合物半导体层13，形成在第二化合物半导体层的顶面的大致整个表面上的第二电极22 13和覆盖第二电极22的绝缘层31.发光元件还具有第一开口部23，第二开口部24，形成在露出在底部的第一化合物半导体层11的一部分上的第一电极21 第一开口部23的第一电极延伸部21A，从第一电极21通过第一开口部23延伸到绝缘层31上并用作第一焊盘部25的第一电极延伸部21A和连接到第二电极22的第二焊盘部26 并安装在第二开口部分25上。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008103499A Light-emitting element, and manufacturing method therefor 有权
标题翻译：发光元件及其制造方法
公开(公告)号：JP2008103499A
公开(公告)日：2008-05-01
申请号：JP2006284051
申请日：2006-10-18
申请人： Sony Corp , ソニー株式会社
发明人： WATABE YOSHIAKI , HINO TOMOKIMI , OKANO NOBUKATA , KURAMOCHI NAOYOSHI , KIKUCHI YUICHIRO , OHASHI TATSUO
IPC分类号： H01L33/06 , H01L33/32 , H01L33/42
CPC分类号： H01L33/44 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element having a structure in which a pinhole or crack is hardly formed and an electrode is covered with a covering layer (insulating layer) having superior step coverage. SOLUTION: The light-emitting element includes (a) an n-type first compound semiconductor layer 11, an active layer 12, and a p-type second compound semiconductor layer 13, which are formed in this order on a basic substance 10, (b) a first electrode 15 formed on an exposed portion 17 of the first compound semiconductor layer 11, and (c) a second electrode 14 formed on the second compound semiconductor layer 13. At least, an SOG layer 16 covers the exposed portion of the first compound semiconductor layer 11, an exposed portion of the active layer 12, an exposed portion of the second compound semiconductor layer 13, and the second electrode 14. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有难以形成针孔或裂纹的结构的发光元件，并且电极被覆盖有具有优异的台阶覆盖率的覆盖层（绝缘层）。解决方案：发光元件包括（a）在碱性物质上依次形成的n型第一化合物半导体层11，有源层12和p型第二化合物半导体层13 如图10所示，（b）形成在第一化合物半导体层11的暴露部分17上的第一电极15，以及（c）形成在第二化合物半导体层13上的第二电极14.至少SOG层16覆盖暴露的第一化合物半导体层11的部分，有源层12的暴露部分，第二化合物半导体层13的暴露部分和第二电极14.版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2010287637A Method of manufacturing semiconductor light-emitting device 审中-公开
标题翻译：制造半导体发光器件的方法
公开(公告)号：JP2010287637A
公开(公告)日：2010-12-24
申请号：JP2009138745
申请日：2009-06-10
申请人： Sony Corp , ソニー株式会社
发明人： OHASHI TATSUO , OMAE AKIRA , YASUDA ATSUSHI
IPC分类号： H01L33/36
摘要： PROBLEM TO BE SOLVED: To reduce current leak by forming a mesa structure without having to carry out etching. SOLUTION: The manufacturing method of a semiconductor light-emitting device includes a step of forming an n-type contact layer 12 on a substrate 11 by an epitaxial growth method; a step of forming an inorganic mask 21 on the n-type contact layer 12 which provides an opening 22 on the region; wherein a body part 16 is formed; a step of forming the body part 16 of mesa structure by forming an n-type layer 13, an active layer 14 and a p-type layer 15, in this order, on the n-type contact layer 12 in the opening 22 of the inorganic mask 21 by epitaxial growth method; a step of removing the inorganic mask 21; a step of forming an electrode forming layer 23 on the n-type contact layer 12 and on the surface of the body part 16; and a step of forming a p electrode 18 on the p-type layer 15; by forming an n electrode 17 on the n-type contact layer 12 by patterning the electrode forming layer 23. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过形成台面结构而不必进行蚀刻来减少电流泄漏。解决方案：半导体发光器件的制造方法包括通过外延生长法在衬底11上形成n型接触层12的步骤; 在n型接触层12上形成无机掩模21的步骤，其在该区域上提供开口22; 其中形成主体部分16; 通过在该开口22中的n型接触层12上依次形成n型层13，有源层14和p型层15来形成台面结构的主体部分16的步骤无机掩模21通过外延生长法; 去除无机掩模21的步骤; 在n型接触层12上和主体部16的表面上形成电极形成层23的工序; 以及在p型层15上形成p电极18的工序; 通过图案化电极形成层23，在n型接触层12上形成n电极17。（C）2011，JPO＆INPIT

5. 发明专利

JP2009231523A Semiconductor light-emitting element and method for manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2009231523A
公开(公告)日：2009-10-08
申请号：JP2008074875
申请日：2008-03-24
申请人： Sony Corp , ソニー株式会社
发明人： HITSUDA YUKIHISA , OHASHI TATSUO
IPC分类号： H01L21/28 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/36 , H01L33/40
CPC分类号： H01L33/405 , H01L33/007 , H01L33/32 , H01L33/40 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element including a second electrode that indicates stable behavior in a manufacturing process of the light-emitting element or when operating the light-emitting element.
SOLUTION: A light-emitting element includes: a first compound semiconductor layer 11 having an (n) conductive type; an active layer 12 formed on the first compound semiconductor layer 11 and constituted of a compound semiconductor; a second compound semiconductor layer 13 formed on the active layer 12 and having a (p) conductive type; a first electrode 15 electrically connected to the first compound semiconductor layer 11; and a second electrode 14 formed on the second compound semiconductor layer 13, wherein the second electrode 14 is constituted of a titanic oxide, has an electron concentration of 4×10
21 /cm
3 or more, and reflects light emitted in the active layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种包括第二电极的发光元件，其表示在发光元件的制造过程中或当操作发光元件时的稳定行为。解决方案：发光元件包括：具有（n）导电类型的第一化合物半导体层11; 形成在第一化合物半导体层11上并由化合物半导体构成的有源层12; 形成在有源层12上并具有（p）导电类型的第二化合物半导体层13; 电连接到第一化合物半导体层11的第一电极15; 以及形成在第二化合物半导体层13上的第二电极14，其中第二电极14由氧化钛构成，电子浓度为4×10 21 / SP / cm 3， SP>以上，并且反射在有源层中发射的光。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008159620A Method of manufacturing light-emitting diode, and method of manufacturing function element 有权
标题翻译：制造发光二极管的方法和制造功能元件的方法
公开(公告)号：JP2008159620A
公开(公告)日：2008-07-10
申请号：JP2006343263
申请日：2006-12-20
申请人： Sony Corp , ソニー株式会社
发明人： OKANO NOBUKATA , OMAE AKIRA , YASUDA TOSHIKAZU , WATABE YOSHIAKI , KURAMOCHI NAOYOSHI , OHASHI TATSUO , HINO TOMOKIMI , NARUI HIRONOBU , MORI KOICHI
IPC分类号： H01L33/16 , C30B25/02 , C30B29/38 , H01L21/205 , H01L33/32 , H01L33/56 , H01L33/62 , H01S5/323
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To easily peel off a substrate inexpensively without giving physical damage to a nitride-based III-V group compound semiconductor layer after the nitride-based III-V group compound semiconductor layer forming a light-emitting diode structure is grown on the substrate. SOLUTION: Projections 12 made of magnetostriction material are formed on one main surface of a substrate 11, and a nitride-based III-V group compound semiconductor layer 15 is grown on recessed parts 13 among the projections 12, which has first a triangular sectional shape with a bottom side as their bottom surfaces, and is further grown from the nitride-based III-V group compound semiconductor layer 15 in horizontal direction. The nitride-based III-V group compound semiconductor layer including an active layer 17 is grown on the nitride-based III-V group compound semiconductor layer 15 to form a light emitting diode structure. Then, magnetic field is applied to the projections 12 to generate magnetostriction, so as to peel off the nitride-based III-V group compound semiconductor layers from the substrate 11. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：在形成发光二极管结构的氮化物III-V族化合物半导体层之后，为了容易地剥离基板而不会对基于氮化物的III-V族化合物半导体层造成物理损伤在基底上生长。解决方案：由磁致伸缩材料制成的突起12形成在基板11的一个主表面上，并且氮化物基III-V族化合物半导体层15生长在突起12中的凹陷部分13上，该突起12首先具有三角形截面形状，其底侧为其底面，并且从氮化物基III-V族化合物半导体层15进一步在水平方向上生长。在氮化物系III-V族化合物半导体层15上生长含有活性层17的氮化物系III-V族化合物半导体层，形成发光二极管结构。然后，将磁场施加到突起12以产生磁致伸缩，从而从基板11剥离基于氮化物的III-V族化合物半导体层。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2015092529A 発光装置、発光ユニット、表示装置、電子機器、および発光素子审中-公开
公开(公告)号：JP2015092529A
公开(公告)日：2015-05-14
申请号：JP2014025755
申请日：2014-02-13
申请人： SONY CORP
发明人： OMAE AKIRA , KATAOKA YUSUKE , NISHINAKA IPPEI , OHASHI TATSUO , SAKOTA HAJIME , BIWA TSUYOSHI
IPC分类号： H01L33/48 , G09F9/33 , H01L33/02
摘要：【課題】光の特性を向上させた発光装置、発光ユニット、表示装置、電子機器、および発光素子を提供する。【解決手段】発光装置は、光の特性の偏りを有する複数の発光素子と、前記複数の発光素子のうち少なくとも2つの発光素子で構成するグループ内で前記光の特性の偏りを補完するように前記発光素子が配置された実装基板とを具備する。【選択図】図1

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