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1. 发明专利

JP2012060023A Semiconductor light-emitting element and manufacturing method of the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2012060023A
公开(公告)日：2012-03-22
申请号：JP2010203473
申请日：2010-09-10
申请人： Sony Corp , ソニー株式会社
发明人： OMAE AKIRA , TOKUDA KOTA , ARIMOCHI HIROYUKI , SUZUKI NOBUHIRO , SHIOMI HARUNORI , YANASHIMA KATSUNORI
IPC分类号： H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a GaN-based semiconductor light-emitting element having an SDH structure and a manufacturing method of the same.SOLUTION: A sapphire substrate with a principal plane being (1-102) plane (R-plane), or a GaN substrate with a principal plane being (11-20) plane (A-plane), or an Si substrate with a principal plane being (111) plane is used as a substrate 10. A mesa-shaped protrusion 11 is formed on the substrate 10 by utilizing a mask layer 17, and a current block layer 15 is formed on sides of the mesa-shaped protrusion 11 by utilizing a difference in crystal growth rate.
摘要翻译：要解决的问题：提供一种具有SDH结构的GaN基半导体发光元件及其制造方法。解决方案：主平面为（1-102）面（R平面）的蓝宝石衬底或主面为（11-20）面（A面）的GaN衬底或Si衬底将主平面（111）面用作基板10.通过利用掩模层17在基板10上形成台面状突起11，并且在台面形状的侧面形成电流阻挡层15 通过利用晶体生长速率的差异来形成突起11。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011091289A Method of manufacturing semiconductor device, and semiconductor device 审中-公开
标题翻译：制造半导体器件的方法和半导体器件
公开(公告)号：JP2011091289A
公开(公告)日：2011-05-06
申请号：JP2009245160
申请日：2009-10-26
申请人： Sony Corp , ソニー株式会社
发明人： OMAE AKIRA , TOKUDA KOTA , ARIMOCHI SUKEYUKI , SUZUKI NOBUHIRO , SHIOMI HARUNORI , HINO TOMOKIMI , YANASHIMA KATSUNORI
IPC分类号： H01L21/205 , C23C16/34 , C30B25/18 , C30B29/38 , H01L33/32
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32 , H01S5/3013
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which is capable of having a nitride-based group III-V compound semiconductor layer, forming an device structure having a surface which is flat and superior in crystallinity on a substrate, such as, a sapphire substrate without making a buffer layer grow, and to provide the semiconductor device manufactured by the method. SOLUTION: When the semiconductor device using a nitride-based group III-V compound semiconductor is manufactured, the nitride-based group III-V compound semiconductor layer 12, forming the device structure, is grown directly on the sapphire substrate 11 having a principal surface which is -0.5 to 0° off an R surface, in a C-axial direction without making a buffer layer grow. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，该半导体器件能够具有氮化物基III-V族化合物半导体层，形成具有平坦且结晶性优异的表面的器件结构衬底，例如蓝宝石衬底，而不使缓冲层生长，并提供通过该方法制造的半导体器件。解决方案：当制造使用基于氮化物的III-V族化合物半导体的半导体器件时，形成器件结构的基于氮化物的III-V族化合物半导体层12直接生长在蓝宝石衬底11上，主表面离开R表面为-0.5至0°，在C轴方向上不使缓冲层生长。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010010692A Growth method of semiconductor layer, method of manufacturing semiconductor light-emitting element, semiconductor light-emitting element, and electronic apparatus 有权
标题翻译：半导体层的生长方法，制造半导体发光元件的方法，半导体发光元件和电子设备
公开(公告)号：JP2010010692A
公开(公告)日：2010-01-14
申请号：JP2009172781
申请日：2009-07-24
申请人： Sony Corp , ソニー株式会社
发明人： OMAE AKIRA , ARIMOCHI SUKEYUKI , OTOMO JUGO , KAZETAGAWA MUNEYUKI , HINO TOMOKIMI
IPC分类号： H01L21/205 , C23C16/34 , H01L21/203 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a method of growing a semiconductor layer by which the plane direction of a semiconductor layer to be grown on a substrate can be selected and a piezoelectric field of the semiconductor layer can be suppressed and/or its crystal quality is improved as needed, and a method of manufacturing a semiconductor device using the same. SOLUTION: The semiconductor layer, which is constituted of the semiconductor having the hexagonal crystal structure and has (11-22) or (10-13) plane direction, is grown on the (1-100) plane of a substrate constituted of a material having the hexagonal crystal structure while exposing (1-100) plane facet, (0001) plane facet, and (10-13) plane facet. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长半导体层的方法，通过该方法可以选择在衬底上生长的半导体层的平面方向，并且可以抑制半导体层的压电场和/或其根据需要提高晶体质量，以及使用其制造半导体器件的方法。解决方案：由具有六方晶系结构并具有（11-22）或（10-13）面方向的半导体构成的半导体层生长在构成的基板的（1-100）面上具有六边形晶体结构的材料，同时曝光（1-100）平面，（0001）平面和（10-13）平面。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2008130606A Semiconductor light emitting element and its manufacturing method, light source cell unit, backlight, lighting device, display, electronic device, and semiconductor element and its manufacturing method 审中-公开
标题翻译：半导体发光元件及其制造方法，光源单元，背光，照明装置，显示器，电子器件和半导体元件及其制造方法
公开(公告)号：JP2008130606A
公开(公告)日：2008-06-05
申请号：JP2006310507
申请日：2006-11-16
申请人： Sony Corp , ソニー株式会社
发明人： OMAE AKIRA , ARIMOCHI SUKEYUKI , OTOMO JUGO , KAZETAGAWA MUNEYUKI , HINO TOMOKIMI
IPC分类号： H01L33/28 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that can suppress quantum confinement Stark effect in an active layer, improve the output of light emission by increasing a volume of the active layer and be easily manufactured, and to provide its manufacturing method. SOLUTION: A substrate 11 is made of a material having a hexagonal crystal structure, and its main face is r plane or a plane. An n-type nitride-based group III-V compound semiconductor layer 12 is grown by priority thereon in a plane orientation, and an n-type nitride-based group III-V compound semiconductor layer 13 and an active layer 14 are sequentially grown thereon by priority in m plane orientation. Furthermore, a p-type nitride-based group III-V compound semiconductor layer 15 is grown by priority thereon in a plane orientation, so as to form a light emitting diode structure. The active layer 14 has a section shape of saw tooth, and slopes 14a and 14b are m-plane facet. The light emitting diode is used to manufacture a light emitting diode backlight. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够抑制活性层中的量子限制斯塔克效应的半导体发光元件，通过增加有源层的体积并容易地制造来提高发光的输出，并且提供其制造方法。解决方案：基板11由具有六方晶系结构的材料制成，其主面为r平面或平面。基于n型氮化物基III-V族化合物半导体层12在其平面取向上优先生长，并且在其上依次生长n型氮化物基III-V族化合物半导体层13和有源层14 在m面方向优先。此外，优先在其上以面取向生长p型氮化物基III-V族化合物半导体层15，从而形成发光二极管结构。有源层14具有锯齿的截面形状，斜面14a和14b是m面。发光二极管用于制造发光二极管背光源。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007116097A Light-emitting diode and method for manufacturing the same, integrated light-emitting diode and nethod for making the same, method for growing nitride-based group iii-v compound semiconductor, substrate for growing nitride-based group iii-v compound semiconductor, light source cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display, electric instrument, and electric device and method for manufacturing the same 有权
标题翻译：发光二极管及其制造方法，用于制造其的集成发光二极管和网络，用于生长基于氮化物的III-V族化合物半导体的方法，用于生长基于氮化物的III-V族化合物半导体的基板，光源单元，发光二极管背光，发光二极管照明装置，发光二极管显示器，电子仪器和电气装置及其制造方法
公开(公告)号：JP2007116097A
公开(公告)日：2007-05-10
申请号：JP2006215342
申请日：2006-08-08
申请人： Sony Corp , ソニー株式会社
发明人： OMAE AKIRA , SHIOMI HARUNORI , KAZETAGAWA MUNEYUKI , AMI TAKAAKI , MIYAJIMA TAKAO , HIRAMATSU YUJI , HATADA IZUHO , OKANO NOBUKATA , TOMITANI SHIGETAKA , YANASHIMA KATSUNORI , HINO TOMOKIMI , NARUI HIRONOBU
IPC分类号： H01L33/08 , C30B29/38 , H01L21/205 , H01L33/16 , H01L33/32
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting diode which emits light efficiently and which can be manufactured at low costs by a single epitaxial growth, and to provide a manufacturing method of the same. SOLUTION: A substrate 11 having a plurality of protrusions 12 is formed on one main surface of the substrate 11 such as a sapphire substrate wherein the protrusion 12 is made of a material different in type from that of the substrate, an SiO 2 film e.g., and a first nitride-based group III-V compound semiconductor layer 15 is grown on each recess 13 between the protrusions 12 until making a triangle in section wherein a bottom surface of the recess becomes a base of the triangle. Thereafter, a second nitride-based group III-V compound semiconductor layer 15 is laterally grown on the substrate from the first nitride-based group III-V compound semiconductor layer 15. The protrusions 12 are triangular or trapezoidal e.g. in section. On the second nitride-based group III-V compound semiconductor layer 15, a third nitride-based group III-V compound semiconductor layer 15 including an active layer and a nitride-based group III-V compound semiconductor layer 15 are formed. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种有效发光并且可以通过单次外延生长以低成本制造的发光二极管，并提供其制造方法。解决方案：具有多个突起12的基板11形成在诸如蓝宝石基板的基板11的一个主表面上，其中突起12由与基板不同的材料制成， SB> 2 膜，并且在突起12之间的每个凹部13上生长第一氮化物基III-V族化合物半导体层15，直到形成三角形，其中凹部的底表面成为基底的三角形。此后，第二氮化物基III-V族化合物半导体层15从第一氮化物基III-V族化合物半导体层15横向生长在衬底上。突起12是三角形或梯形的。在部分。在第二氮化物基III-V族化合物半导体层15上，形成包括有源层和氮化物基III-V族化合物半导体层15的第三氮化物基III-V族化合物半导体层15。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2007109793A Semiconductor light-emitting element and light scattering substrate 审中-公开
标题翻译：半导体发光元件和光散射基板
公开(公告)号：JP2007109793A
公开(公告)日：2007-04-26
申请号：JP2005297666
申请日：2005-10-12
申请人： Sony Corp , ソニー株式会社
发明人： YASUDA TOSHIKAZU , OMAE AKIRA
IPC分类号： H01L33/08 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of improving light extraction efficiency. SOLUTION: A light emitter 30 is provided on a transparent light scattering substrate 12 to an emission wavelength, and light generated by the emitter 30 is emitted from the side of the light scattering substrate 12. The light scattering substrate 12 has a plurality of projecting light scatters 11 on a substrate 10 (a sapphire substrate). For the light scatters 11, a number of scattering particles 14 made of, for example, Si (silicon) are dispersed inside a medium 13 made of, for example, SiO 2 (silicon oxide). Emission light is refracted on an inclined surface at the light scatter 11, and is scattered by the scattering particles 14 inside the light scatter 11 for changing to an angle less than a critical angle. As a result, the light extraction efficiency is improved. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够提高光提取效率的半导体发光元件。解决方案：在透明光散射基板12上设置发光体30至发射波长，并且从发光体30产生的光从光散射基板12侧发射。光散射基板12具有多个投影光在基板10（蓝宝石基板）上散射11。对于光散射11，由例如Si（硅）制成的多个散射粒子14分散在由例如SiO 2 SB（氧化硅）制成的介质13内。发射光在光散射11的倾斜表面上被折射，并被光散射11内的散射粒子14散射，以便变成小于临界角的角度。结果提高了光提取效率。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2005029885A Thin film deposition method, thin film deposition system and semiconductor device 审中-公开
标题翻译：薄膜沉积方法，薄膜沉积系统和半导体器件
公开(公告)号：JP2005029885A
公开(公告)日：2005-02-03
申请号：JP2003364084
申请日：2003-10-24
申请人： Sony Corp , ソニー株式会社
发明人： MEMESAWA SATOHIKO , OMAE AKIRA , TOJO TAKESHI , YANASHIMA KATSUNORI
IPC分类号： H05B33/10 , C23C14/24 , H01L51/50 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To deposit a film having excellent film deposition controllability and high packing density. SOLUTION: In a reactor 10 where a first organic precursory material 4 as a host material is film-deposited, a vacuum deposition method is applied. A second organic precursory material 6 as a guest material is vaporized by a vaporizer 80 and is mixed with an inert carrier gas 7 fed from a gas refiner 94, and the mixed vapor 8 is introduced into the reactor 10 through piping 87. A mass flow controller 90 is fitted onto the path of the piping 89. The amount of the second organic precursory material 6 to be introduced into the reactor 10 is controlled by the mass flow controller 90, so that the concentration control in doping is performed. The host material is deposited to a substrate W by a vacuum deposition method capable of performing high speed-high precision film deposition, and the guest material is deposited to the substrate W by an OVPD (Organic Vapor Phase Deposition) method which exhibits excellent concentration controllability. As for the host material, the advantages of the vacuum deposition method can be fully utilized, and, as for the guest material, the advantages of the OVPD method can be fully utilized. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：沉积具有优异的成膜控制性和高堆积密度的膜。解决方案：在作为主体材料的第一有机前体材料4被膜沉积的反应器10中，应用真空沉积方法。作为客体材料的第二有机前体材料6通过蒸发器80蒸发并与从气体精炼器94供给的惰性载气7混合，并且混合蒸汽8通过管道87引入反应器10中。质量流控制器90安装在管道89的路径上。被引入反应器10的第二有机前体材料6的量由质量流量控制器90控制，从而进行掺杂浓度控制。通过能够进行高速高精度的膜沉积的真空沉积法将主体材料沉积到基板W，并且通过表现出优异的浓度可控性的OVPD（有机气相沉积）方法将客体材料沉积到基板W 。对于主体材料，可以充分利用真空沉积方法的优点，并且对于客体材料，可以充分利用OVPD方法的优点。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2012060022A Semiconductor light-emitting element and manufacturing method of the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2012060022A
公开(公告)日：2012-03-22
申请号：JP2010203472
申请日：2010-09-10
申请人： Sony Corp , ソニー株式会社
发明人： OMAE AKIRA , MAEDA YUUKI , YANASHIMA KATSUNORI
IPC分类号： H01L33/22 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a GaN-based semiconductor light-emitting element that can inhibit lowering in a light extraction efficiency by etching and to provide a semiconductor light-emitting element manufactured by the method.SOLUTION: The semiconductor light-emitting element manufacturing method comprises the steps of: forming a plurality of island-shaped mask layers 150 of a top face of a first upper clad layer 14A; selectively forming a second upper clad layer 14B on the top face of the first upper clad layer 14A at a non-forming region of the plurality of island-shaped mask layers 150 by crystal growth; and filling each of the mask layers 150 by thickly forming the second upper clad layer 14B.
摘要翻译：解决的问题：提供可以通过蚀刻抑制光提取效率降低的GaN基半导体发光元件的制造方法，并提供通过该方法制造的半导体发光元件。解决方案：半导体发光元件制造方法包括以下步骤：形成第一上包层14A的顶面的多个岛状掩模层150; 通过晶体生长在多个岛状掩模层150的非形成区域中选择性地在第一上部包覆层14A的顶面上形成第二上部包层14B; 并通过厚度形成第二上包层14B填充每个掩模层150。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2008198614A Light-emitting element and its manufacturing method, and light-emitting device 审中-公开
标题翻译：发光元件及其制造方法和发光装置
公开(公告)号：JP2008198614A
公开(公告)日：2008-08-28
申请号：JP2008055879
申请日：2008-03-06
申请人： Sony Corp , ソニー株式会社
发明人： YASUDA TOSHIKAZU , OMAE AKIRA , KAZETAGAWA MUNEYUKI , HATADA IZUHO , MEMESAWA SATOHIKO , YANASHIMA KATSUNORI , NARUI HIRONOBU
IPC分类号： H05B33/14 , B82B1/00 , B82B3/00 , C25D11/32 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element capable of obtaining a light emission wavelength having large light emission intensity, and furthermore having a narrow half-value width. SOLUTION: The light-emitting element 30 is equipped with a light-emitting layer 40 formed on a substrate 31. The light-emitting layer 40 is composed of quantum dots 41 as well as rare earth atoms 43 which is adhered to a surface of the quantum dots 41, and/or contained interior of the quantum dots 41. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2006319277A Light-emitting diode and method for manufacturing same, stacked light-emitting diode and method for manufacturing same, light-emitting diode back light, light-emitting diode illuminator, light-emitting diode display and electronic device 有权
标题翻译：发光二极管及其制造方法，堆积式发光二极管及其制造方法，发光二极管背光，发光二极管照明器，发光二极管显示器和电子器件
公开(公告)号：JP2006319277A
公开(公告)日：2006-11-24
申请号：JP2005143019
申请日：2005-05-16
申请人： Sony Corp , ソニー株式会社
发明人： OTOMO JUGO , OMAE AKIRA , YANASHIMA KATSUNORI
IPC分类号： H01L33/06 , H01L33/16 , H01L33/22 , H01L33/32 , H01L33/56
CPC分类号： H01L2224/48091 , H01L2224/48465 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting diode and a method for manufacturing the same in which emission efficiency is extremely high by improving light extraction efficiency and remarkably reducing an invalid current. SOLUTION: In a recess 11a of a sapphire substrate 11 to which rugged working is applied, an n-type GaN layer 12 is made to grow through a state that it has a triangular cross-sectional shape with a bottom surface as a base so as to fill up this recess 11a, and lateral growth is then performed from this n-type GaN layer 12 onto a protrusion 11b. Before occurrence of meeting of the n-type GaN layer 12, a dopant is switched to a p-type dopant and lateral growth is performed until perfect meeting of a p-type GaN layer 13. This p-type GaN layer 13 is used as a current constriction area. On the n-type GaN layer 12 and the p-type GaN layer 13; an n-type GaN layer 14, an active layer 15, a p-type AlGaN layer 16, and a p-type GaN layer 17 are made to grow to form a light-emitting diode structure. This GaN light-emitting diode is used to manufacture a light-emitting diode back light and the like. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决方案：通过提高光提取效率和显着降低无效电流，提供一种发光二极管及其制造方法，其中发光效率极高。解决方案：在施加了坚固加工的蓝宝石衬底11的凹部11a中，使n型GaN层12通过具有三角形横截面形状的状态生长，其底面为以填充该凹部11a，然后从该n型GaN层12进行横向生长到突起11b上。在发生n型GaN层12的会聚之前，将掺杂剂切换为p型掺杂剂，并进行横向生长，直到p型GaN层13完全满足。该p型GaN层13用作目前的收缩区域。在n型GaN层12和p型GaN层13上; 使n型GaN层14，有源层15，p型AlGaN层16和p型GaN层17生长以形成发光二极管结构。该GaN发光二极管用于制造发光二极管背光等。版权所有（C）2007，JPO＆INPIT

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