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1. 发明专利

JP2011077339A Semiconductor laser 审中-公开
标题翻译：半导体激光器
公开(公告)号：JP2011077339A
公开(公告)日：2011-04-14
申请号：JP2009228038
申请日：2009-09-30
申请人： Sony Corp , ソニー株式会社
发明人： KURAMOCHI NAOYOSHI , HINO TOMOKIMI , HIRATA TATSUJIRO , YOSHIDA YUTA
IPC分类号： H01S5/042
CPC分类号： H01S5/0425 , H01S5/02276 , H01S5/22 , H01S5/4031 , H01S2301/176
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser achieving reduced possibility that a wiring layer disposed in the air is broken even under severe environment of a large temperature difference. SOLUTION: A trench 31 is provided between adjacent ridges 30, and the wiring layer 35 electrically connecting an upper electrode 33 and a pad electrode 34 is disposed in the air at least above the trench 31. The wiring layer 35 in a portion above the trench 31 has a flat shape or a concave shape which dents toward the trench. With the configuration, accumulation of strains in the wiring layer 35 when the wiring layer 35 repeats expansion and shrink under severe environment of a large temperature difference is suppressed. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供半导体激光器，即使在温度差大的恶劣环境下，也可以降低布置在空气中的配线层的可能性。解决方案：在相邻脊30之间设置有沟槽31，并且电连接上电极33和焊盘电极34的布线层35至少设置在沟槽31的上方。布线层35的一部分沟槽31上方具有朝向沟槽凹陷的平坦形状或凹形。通过该结构，能够抑制在严重的温度差大的环境下布线层35重复膨胀收缩的布线层35中的应变累积。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2008159620A Method of manufacturing light-emitting diode, and method of manufacturing function element 有权
标题翻译：制造发光二极管的方法和制造功能元件的方法
公开(公告)号：JP2008159620A
公开(公告)日：2008-07-10
申请号：JP2006343263
申请日：2006-12-20
申请人： Sony Corp , ソニー株式会社
发明人： OKANO NOBUKATA , OMAE AKIRA , YASUDA TOSHIKAZU , WATABE YOSHIAKI , KURAMOCHI NAOYOSHI , OHASHI TATSUO , HINO TOMOKIMI , NARUI HIRONOBU , MORI KOICHI
IPC分类号： H01L33/16 , C30B25/02 , C30B29/38 , H01L21/205 , H01L33/32 , H01L33/56 , H01L33/62 , H01S5/323
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To easily peel off a substrate inexpensively without giving physical damage to a nitride-based III-V group compound semiconductor layer after the nitride-based III-V group compound semiconductor layer forming a light-emitting diode structure is grown on the substrate. SOLUTION: Projections 12 made of magnetostriction material are formed on one main surface of a substrate 11, and a nitride-based III-V group compound semiconductor layer 15 is grown on recessed parts 13 among the projections 12, which has first a triangular sectional shape with a bottom side as their bottom surfaces, and is further grown from the nitride-based III-V group compound semiconductor layer 15 in horizontal direction. The nitride-based III-V group compound semiconductor layer including an active layer 17 is grown on the nitride-based III-V group compound semiconductor layer 15 to form a light emitting diode structure. Then, magnetic field is applied to the projections 12 to generate magnetostriction, so as to peel off the nitride-based III-V group compound semiconductor layers from the substrate 11. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：在形成发光二极管结构的氮化物III-V族化合物半导体层之后，为了容易地剥离基板而不会对基于氮化物的III-V族化合物半导体层造成物理损伤在基底上生长。解决方案：由磁致伸缩材料制成的突起12形成在基板11的一个主表面上，并且氮化物基III-V族化合物半导体层15生长在突起12中的凹陷部分13上，该突起12首先具有三角形截面形状，其底侧为其底面，并且从氮化物基III-V族化合物半导体层15进一步在水平方向上生长。在氮化物系III-V族化合物半导体层15上生长含有活性层17的氮化物系III-V族化合物半导体层，形成发光二极管结构。然后，将磁场施加到突起12以产生磁致伸缩，从而从基板11剥离基于氮化物的III-V族化合物半导体层。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008108816A Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：JP2008108816A
公开(公告)日：2008-05-08
申请号：JP2006288422
申请日：2006-10-24
申请人： Sony Corp , ソニー株式会社
发明人： WATABE YOSHIAKI , HINO TOMOKIMI , OKANO NOBUKATA , KURAMOCHI NAOYOSHI , OHASHI TATSUO
IPC分类号： H01L33/06 , H01L21/28 , H01L29/417 , H01L33/38 , H01L33/44
CPC分类号： H01L27/15 , H01L24/45 , H01L33/62 , H01L2224/0603 , H01L2224/45144 , H01L2224/48463 , H01L2924/12035 , H01L2924/12041 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element having a constitution and a structure being capable of reducing the area of a first electrode as much as possible and shouldering no large burden to an assembly process while having a high electrostatic breakdown preventive function. SOLUTION: The light-emitting element has a first compound semiconductor layer 11, an active layer 12, a second compound semiconductor layer 13, a second electrode 22 formed on approximately the whole surface of the top face of the second compound semiconductor layer 13 and an insulating layer 31 coating the second electrode 22. The light-emitting element further has a first opening section 23, a second opening section 24, a first electrode 21 formed on a part of the first compound semiconductor layer 11 exposed on the bottom of the first opening section 23, a first electrode extending section 21A extended on the insulating layer 31 through the first opening section 23 from the first electrode 21 and serving as a first pad section 25 and a second pad section 26 connected to the second electrode 22 and fitted to the second opening section 25. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种发光元件，其具有能够尽可能地减小第一电极的面积的结构和结构，并且在具有高静电击穿的同时不会对组装过程造成较大的负担预防功能。
解决方案：发光元件具有第一化合物半导体层11，有源层12，第二化合物半导体层13，形成在第二化合物半导体层的顶面的大致整个表面上的第二电极22 13和覆盖第二电极22的绝缘层31.发光元件还具有第一开口部23，第二开口部24，形成在露出在底部的第一化合物半导体层11的一部分上的第一电极21 第一开口部23的第一电极延伸部21A，从第一电极21通过第一开口部23延伸到绝缘层31上并用作第一焊盘部25的第一电极延伸部21A和连接到第二电极22的第二焊盘部26 并安装在第二开口部分25上。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008103499A Light-emitting element, and manufacturing method therefor 有权
标题翻译：发光元件及其制造方法
公开(公告)号：JP2008103499A
公开(公告)日：2008-05-01
申请号：JP2006284051
申请日：2006-10-18
申请人： Sony Corp , ソニー株式会社
发明人： WATABE YOSHIAKI , HINO TOMOKIMI , OKANO NOBUKATA , KURAMOCHI NAOYOSHI , KIKUCHI YUICHIRO , OHASHI TATSUO
IPC分类号： H01L33/06 , H01L33/32 , H01L33/42
CPC分类号： H01L33/44 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element having a structure in which a pinhole or crack is hardly formed and an electrode is covered with a covering layer (insulating layer) having superior step coverage. SOLUTION: The light-emitting element includes (a) an n-type first compound semiconductor layer 11, an active layer 12, and a p-type second compound semiconductor layer 13, which are formed in this order on a basic substance 10, (b) a first electrode 15 formed on an exposed portion 17 of the first compound semiconductor layer 11, and (c) a second electrode 14 formed on the second compound semiconductor layer 13. At least, an SOG layer 16 covers the exposed portion of the first compound semiconductor layer 11, an exposed portion of the active layer 12, an exposed portion of the second compound semiconductor layer 13, and the second electrode 14. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有难以形成针孔或裂纹的结构的发光元件，并且电极被覆盖有具有优异的台阶覆盖率的覆盖层（绝缘层）。解决方案：发光元件包括（a）在碱性物质上依次形成的n型第一化合物半导体层11，有源层12和p型第二化合物半导体层13 如图10所示，（b）形成在第一化合物半导体层11的暴露部分17上的第一电极15，以及（c）形成在第二化合物半导体层13上的第二电极14.至少SOG层16覆盖暴露的第一化合物半导体层11的部分，有源层12的暴露部分，第二化合物半导体层13的暴露部分和第二电极14.版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007165726A Semiconductor light-emitting diode 审中-公开
标题翻译：半导体发光二极管
公开(公告)号：JP2007165726A
公开(公告)日：2007-06-28
申请号：JP2005362263
申请日：2005-12-15
申请人： Sony Corp , ソニー株式会社
发明人： KOBAYASHI TOSHIMASA , WATABE YOSHIAKI , KURAMOCHI NAOYOSHI , HITSUDA YUKIHISA , YASUDA ATSUSHI
IPC分类号： H01L33/10 , H01L33/24 , H01L33/32 , H01L33/36 , H01L33/46
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting diode capable of improving light extraction efficiency. SOLUTION: In a first region 10A, a pn junction section 14 is composed of an n-type layer 12 and a p-type layer 13, and a p-side electrode 21 is formed on the p-type layer 13. A second region 10B includes a partial region of the n-type layer 12 and an n-side electrode 22 is provided. An inclined section 30 including one portion of the pn junction section 14 is provided at a boundary section 10C between both of them. A high reflection film 42 made of aluminum Al, silver Ag, and the like is provided at the inclined section 30, and light reaching the inclined section 30 is reflected by the high reflection film 42 and is extracted to the outside efficiently. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够提高光提取效率的半导体发光二极管。解决方案：在第一区域10A中，pn结部分14由n型层12和p型层13构成，p侧电极21形成在p型层13上。第二区域10B包括n型层12的部分区域和n侧电极22。包括pn结部14的一部分的倾斜部30设置在两者之间的边界部10C。由铝Al，银Ag等构成的高反射膜42设置在倾斜部分30处，并且到达倾斜部分30的光被高反射膜42反射并被有效地提取到外部。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2007165725A Semiconductor light-emitting diode 有权
标题翻译：半导体发光二极管
公开(公告)号：JP2007165725A
公开(公告)日：2007-06-28
申请号：JP2005362262
申请日：2005-12-15
申请人： Sony Corp , ソニー株式会社
发明人： KOBAYASHI TOSHIMASA , WATABE YOSHIAKI , KURAMOCHI NAOYOSHI , HITSUDA YUKIHISA , YASUDA ATSUSHI
IPC分类号： H01L33/24 , H01L33/32 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting diode capable of restraining the influence of damage by dry etching at a level difference section and improving element characteristics and reliability. SOLUTION: A p-side electrode 21 and an n-side electrode 22 are provided at a first region 10A and a second region 10B, respectively. A boundary region 10C between both of them is set to a two-stage structure of a first level difference section 31 in a p-type cladding layer 13 and a second level difference section 33 straddling over a pn junction section 14 with a flat section 32 in between. The thickness of the p-type cladding layer 13 in the flat section 32 becomes small, thus preventing current from spreading laterally. Current C injected from the p-side electrode 21 enters the n-type cladding layer 12 after lowering to the flat section 32 along the first level difference section 31, and flows toward the n-side electrode 22 laterally; and the path of the current C is separated from the second level difference section 33. Even if a pn structure on the surface of the second level difference section 33 is damaged by dry etching, the generation of a leak path, or the like is restrained. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体发光二极管，其能够通过干蚀刻来抑制电平差异部分的损伤的影响，并提高元件特性和可靠性。解决方案：p侧电极21和n侧电极22分别设置在第一区域10A和第二区域10B。它们之间的边界区域10C被设定为p型包覆层13中的第一电平差分部分31和跨平面部分32的pn接合部分14上的第二电平差值部分33的两级结构之间。平坦部32中的p型包覆层13的厚度变小，防止电流横向扩散。从p侧电极21注入的电流C在沿着第一电平差分部分31下降到平坦部分32之后进入n型包层12，并横向向n侧电极22流动。并且电流C的路径与第二电平差值部分33分离。即使第二电平差值部分33的表面上的pn结构被干蚀刻损坏，也可以抑制泄漏路径的产生等。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2007081115A Method for manufacturing semiconductor light emitting element 审中-公开
标题翻译：制造半导体发光元件的方法
公开(公告)号：JP2007081115A
公开(公告)日：2007-03-29
申请号：JP2005266867
申请日：2005-09-14
申请人： Sony Corp , ソニー株式会社
发明人： KURAMOCHI NAOYOSHI , HITSUDA YUKIHISA , WATABE YOSHIAKI , YANASHIMA KATSUNORI
IPC分类号： H01L21/3065 , H01L33/32 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light emitting element which can obtain a good and stable ohmic characteristic and contact resistance, and can prevent oxidation of an electrode upon removal of a resist mask. SOLUTION: The method for manufacturing a semiconductor light emitting element comprises the steps of dry etching a group III-V nitride-based semiconductor layer 10 of a laminated structure of an n type semiconductor layer 3, a luminous layer 4, and a p type semiconductor layer 5 at a relatively low first rate, and thereafter etching the group III-V nitride-based semiconductor layer 10 at a final rate faster than the first rate. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够获得良好且稳定的欧姆特性和接触电阻的半导体发光元件的制造方法，并且可以防止在去除抗蚀剂掩模时电极的氧化。解决方案：用于制造半导体发光元件的方法包括以下步骤：将n型半导体层3，发光层4和ap的层叠结构的III-V族氮化物基半导体层10进行干蚀刻型半导体层5，然后以比第一速率更快的最终速率蚀刻III-V族氮化物基半导体层10。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2006108202A Method of manufacturing light emitting element 有权
标题翻译：制造发光元件的方法
公开(公告)号：JP2006108202A
公开(公告)日：2006-04-20
申请号：JP2004289544
申请日：2004-10-01
申请人： Sony Corp , ソニー株式会社
发明人： SETO MASAHIRO , INOUE TOMOKO , KURAMOCHI NAOYOSHI , HITSUDA YUKIHISA , OKANO NOBUKATA , SHIOMI HARUNORI , MIYAJIMA TAKAO , AMI TAKAAKI
IPC分类号： H01L21/205 , H01L33/32 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing light emitting element by which the yield of a light emitting element can be improved by reducing the influence of the warping of a substrate caused by epitaxial growth. SOLUTION: The method of manufacturing the light emitting element includes an epitaxial growth step of adhering a film to the surface of the substrate through epitaxial growth, a flattening step of flattening the rear surface of the substrate by grinding after the epitaxial growth step, and a substrate treating step of performing prescribed treatment to the surface of the substrate after the flattening step. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造发光元件的方法，通过减少由外延生长引起的基板翘曲的影响，可以提高发光元件的产量。解决方案：制造发光元件的方法包括外延生长步骤，其通过外延生长将膜粘附到衬底的表面;平坦化步骤，在外延生长步骤之后通过研磨来平坦化衬底的后表面以及在平坦化工序后对基板的表面进行规定处理的基板处理工序。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005332845A Method of manufacturing nitride semiconductor element 审中-公开
标题翻译：制造氮化物半导体元件的方法
公开(公告)号：JP2005332845A
公开(公告)日：2005-12-02
申请号：JP2004147198
申请日：2004-05-18
申请人： Sony Corp , ソニー株式会社
发明人： SHIOMI HARUNORI , AMI TAKAAKI , SETO MASAHIRO , OKANO NOBUKATA , KURAMOCHI NAOYOSHI , HITSUDA YUKIHISA , INOUE TOMOKO
IPC分类号： C23C16/34 , H01L21/20 , H01L21/205 , H01L21/268 , H01S5/042 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor element by which a low-resistance p-type nitride semiconductor layer can be obtained without diffusing a p-type dopant and thereby such a nitride semiconductor element can be fabricated that has good characteristics with a very precisely controlled dopant concentration profile in the depthwise direction.
SOLUTION: All of a p-type cap layer 6, a p-type clad layer 7, a p
- -type contact layer 8, and a p
+ -type contact layer 9 which consist of a crystalline nitride semiconductor, already contain a p-type dopant, and are formed in this order. By irradiating laser light (ν) on these p-type nitride semiconductor layers 6-9, the p-type dopants contained therein are activated. The laser light (ν) has a photon energy higher than a binding energy between the p-type dopants contained in the nitride semiconductor layers 6-9 and hydrogen. It is preferred that the laser light (ν) is irradiated at a pulse width of 1 μsec or less.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造氮化物半导体元件的方法，通过该方法可以获得低电阻p型氮化物半导体层而不扩散p型掺杂剂，由此可以制造这种氮化物半导体元件其具有在深度方向上具有非常精确控制的掺杂剂浓度分布的良好特性。解决方案：所有的p型覆盖层6，p型覆盖层7，ap - 型接触层8和ap + / SP>型由结晶氮化物半导体构成的接触层9已经含有p型掺杂剂，并且依次形成。通过在这些p型氮化物半导体层6-9上照射激光（ν），其中包含的p型掺杂剂被激活。激光（ν）具有高于氮化物半导体层6-9中包含的p型掺杂剂和氢之间的结合能的光子能量。优选以1μsec以下的脉冲宽度照射激光（ν）。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2002057158A INSULATING NITRIDE LAYER AND ITS FORMATION METHOD, AND SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002057158A
公开(公告)日：2002-02-22
申请号：JP2000241581
申请日：2000-08-09
申请人： SONY CORP
发明人： NAKAMURA FUMIHIKO , KURAMOCHI NAOYOSHI , KAWAI HIROHARU
IPC分类号： H01L29/73 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/318 , H01L21/331 , H01L21/335 , H01L21/338 , H01L21/762 , H01L27/095 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/778 , H01L29/812 , H01L31/02 , H01L31/0304 , H01L33/02 , H01L33/08 , H01L33/14 , H01L33/30 , H01L33/32 , H01S5/026 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a nitride layer of high resistance and excellent insulation property which is suitable for III-V compound semiconductor device consisting of nitride and enables electrically good isolation while restraining lowering of conductivity of an active layer, and its formation method, and furthermore to improve characteristic of a semiconductor device by using the nitride layer. SOLUTION: An insulating nitride layer 3c is formed by doping a III-V compound semiconductor consisting of nitride mainly with IIB group element (especially, Zn) at a high density of 1×1017/cm3 or more. The semiconductor device such as AlGaN/GaN HEMT has the nitride layer below a GaN active layer 4.

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