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1. 发明专利

JP2011054639A Apparatus and method for manufacturing compound semiconductor, and compound semiconductor 有权
标题翻译：用于制造化合物半导体和化合物半导体的装置和方法
公开(公告)号：JP2011054639A
公开(公告)日：2011-03-17
申请号：JP2009200204
申请日：2009-08-31
申请人： Showa Denko Kk , 昭和電工株式会社
发明人： YASUHARA HIDEKI , BANDO AKIRA
IPC分类号： H01L21/205 , C23C16/458 , H01L21/683
CPC分类号： C23C16/4583 , C23C16/303 , C23C16/4584 , C23C16/4585 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/68735 , H01L21/68764 , H01L21/68771
摘要： PROBLEM TO BE SOLVED: To equalize temperature on a surface of a substrate, on which a crystal of a compound semiconductor is epitaxially grown, in manufacture of the compound semiconductor by using an MOCVD method. SOLUTION: A compound semiconductor manufacturing device forms a compound semiconductor layer by using a metal organic chemical vapor deposition method. The device includes a reaction container, a holder which is arranged in the reaction container and on which an object to be formed is placed so that a face to be formed of the object to be formed directed upward, and a raw material supply port supplying material gas of the compound semiconductor into the reaction container from outside. The holder has a support member for supporting the body to be formed such that an upper surface of the holder on which the object to be formed is placed and a lower surface of the object to be formed hold a prescribed interval. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了使通过MOCVD法在化合物半导体的制造中外延生长化合物半导体的晶体的表面上的温度平衡。解决方案：化合物半导体制造装置通过使用金属有机化学气相沉积法形成化合物半导体层。该装置包括反应容器，保持器，其布置在反应容器中，并且待成形物体放置成使得要形成的要形成的面朝向上方，以及原料供给口供给材料化合物半导体的气体从外部进入反应容器。保持器具有用于支撑要形成的主体的支撑构件，使得待放置物体的保持器的上表面和待形成的物体的下表面保持规定的间隔。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2011049309A Method for manufacturing compound semiconductor 有权
标题翻译：制造化合物半导体的方法
公开(公告)号：JP2011049309A
公开(公告)日：2011-03-10
申请号：JP2009195727
申请日：2009-08-26
申请人： Showa Denko Kk , 昭和電工株式会社
发明人： YASUHARA HIDEKI , BANDO AKIRA
IPC分类号： H01L21/205 , C23C16/52
摘要： PROBLEM TO BE SOLVED: To accurately measure a surface temperature of a layer of a compound semiconductor laminated on a substrate, in manufacturing the compound semiconductor using an organometallic vapor deposition. SOLUTION: A substrate holding body (holding body) 30 mounted with a compound semiconductor substrate (body to be formed: sapphire substrate) 40 is installed on an inside of a reaction container, in this method for manufacturing the compound semiconductor using the organometallic vapor deposition, the compound semiconductor is epitaxy-grown (compound semiconductor layer 100) on a surface of the compound semiconductor substrate 40, by heating the substrate holding body (holding body) 30 installed on the inside of the reaction container, to react with a raw gas of the compound semiconductor supplied into the reaction container, and the surface temperature of the compound semiconductor layer 100 is measured using an infrared ray within 8-14 μm of wavelength range by a radiation thermometer 90a. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了精确地测量层叠在基板上的化合物半导体层的表面温度，在使用有机金属气相沉积制造化合物半导体时。解决方案：在该反应容器的内侧安装有安装有化合物半导体基板（待形成物体）蓝宝石基板40的基板保持体（保持体）30，在该化合物半导体的制造方法中，使用通过加热安装在反应容器内部的基板保持体（保持体）30，化合物半导体在化合物半导体基板40的表面上外延生长（化合物半导体层100），与供给反应容器的化合物半导体的原料气体和化合物半导体层100的表面温度通过辐射温度计90a使用波长范围在8〜14μm的红外线进行测定。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2012044030A Compound semiconductor manufacturing apparatus, compound semiconductor manufacturing method and compound semiconductor 有权
标题翻译：化合物半导体制造装置，化合物半导体制造方法和化合物半导体
公开(公告)号：JP2012044030A
公开(公告)日：2012-03-01
申请号：JP2010184775
申请日：2010-08-20
申请人： Showa Denko Kk , 昭和電工株式会社
发明人： YASUHARA HIDEKI , BANDO AKIRA
IPC分类号： H01L21/205 , H01L33/32 , H01S5/343
CPC分类号： H01L21/02293 , C23C16/4583 , C30B25/02 , C30B25/12 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/6875 , H01L21/68757 , H01L21/68764 , H01L21/68771 , H01L33/007
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor manufacturing method using a metalorganic chemical vapor deposition (MOCVD) method, which can inhibit departure from target values of a temperature distribution and an average wavelength on the substrate for growing compound semiconductor crystals.SOLUTION: The compound semiconductor manufacturing apparatus forming a compound semiconductor layer by using a metalorganic chemical vapor deposition method, comprises a reaction chamber, a supporter disposed in the reaction chamber on which an object to be formed is loaded such that a formed face of the object to be formed faces upward and a material supply port supplying material gases of the compound semiconductor from outside into the reaction chamber. The supporter contacts an undersurface of the object to be formed in a region from the center of a top face of the supporter to inside of an outer periphery of the object to be formed. The supporter includes a support part supporting the object to be formed so as to keep a predetermined distance between the top face of the supporter and the undersurface of the object to be formed.
摘要翻译：解决的问题：提供一种使用金属有机化学气相沉积（MOCVD）方法的化合物半导体制造方法，其可以抑制偏离用于生长化合物半导体晶体的衬底上的温度分布和平均波长的目标值。解决方案：通过使用金属有机化学气相沉积法形成化合物半导体层的化合物半导体制造装置包括反应室，设置在反应室中的载体，在该反应室中加载待形成的物体，使得形成的表面要形成的物体朝向上方，并且材料供给口将化合物半导体的气体从外部供给到反应室中。支撑体接触待形成物体的下表面，该下表面从支撑体的顶面的中心到要形成的物体的外周的内部。支撑件包括支撑部件，其支撑要形成的物体，以便在支撑件的顶面和待形成物体的下表面之间保持预定的距离。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JPH11354834A METHOD OF EVALUATING LIGHT EMISSION CHARACTERISTICS OF EPITAXIAL WAFER FOR LIGHT EMITTING DIODE 失效
公开(公告)号：JPH11354834A
公开(公告)日：1999-12-24
申请号：JP15466598
申请日：1998-06-03
申请人： SHOWA DENKO KK
发明人： YASUHARA HIDEKI , MURAKI NORITAKA , NAKAMURA SHIGEO
IPC分类号： H01L33/02 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To obtain a correlation between the light emission intensity and brightness of a light emitting diode by means that an epitaxial diode for the light emitting diode has at least a light emitting layer located at a specified depth from the surface and surface layer formed on the light emitting layer having a smaller band gap than that of the light emitting layer, the small region has a specified circular shape, and trenches are at specified depth from the surface. SOLUTION: A small region 4 on the surface has a circular form with a diameter of 100-300 μm, and trenches 3 around the small region 4 are deeper by 3 μm or more than the depth of a light emitting layer 1 and at a depth of 20 μm or more from the surface, whereby a correlation can be obtd. between the light emission intensity measured in the state of an epitaxial wafer and brightness of a light emitting diode. This is because the small region is made circular at a diameter of 300 μm or less, the distance between the probe contact point in the small region and side the face of the trench is short, light picked up from the side face of the epitaxial layer facing the trench increases, and reflected light at the trench bottom face can be picked out as the trench depth is set to 20 μm or more.

5. 发明专利

JP2002359395A LIGHT EMITTING DIODE EPITAXIAL WAFER THEREFOR LIGHT EMITTING DIODE, AND METHOD OF MANUFACTURING THE WAFER 失效
公开(公告)号：JP2002359395A
公开(公告)日：2002-12-13
申请号：JP2001164275
申请日：2001-05-31
申请人： SHOWA DENKO KK
发明人： YASUHARA HIDEKI
IPC分类号： H01L33/30 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To manufacture an infrared light emitting diode having a high emitting power output under a condition where the diode is fed with a low current of 0.1-1 mA and a long light emitting wavelength of 940 nm which is equivalent to or longer than that of the conventional GaAs LED. SOLUTION: An epitaxial wafer for light emitting diode is manufactured by the slowly cooling liquid phase epitaxial growth method by utilizing the NP natural inversion of Si which is an amphoteric impurity. In the wafer, the In composition x in the PN junction interface between an N-type GaInAlAs layer and a P-type GaInAlAs layer is controlled within the range of 0.002 cm to 6×10 cm , and the Al composition in the interface is also controlled most suitably within the range of 0.02

6. 发明专利

JP2001111104A EPITAXIAL WATER FOR SEMICONDUCTOR LIGHT EMITTING DEVICES, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
公开(公告)号：JP2001111104A
公开(公告)日：2001-04-20
申请号：JP28462599
申请日：1999-10-05
申请人： SHOWA DENKO KK
发明人： YASUHARA HIDEKI
IPC分类号： H01L33/22 , H01L33/30 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer for semiconductor light emitting devices which improves the brightness of the light emitting element. SOLUTION: In the method of manufacturing an epitaxial wafer for semiconductor light emitting devices such that an AlGaInP-made lower clad layer, an active layer and an upper clad layer are epitaxially grown on a semiconductor layer by the metal organic chemical vapor deposition(MOCVD) method, the epitaxial growth is once interrupted and the semiconductor substrate is held in a PH3-containing gas atmosphere for 1-30 min at least either during growing of the lower clad layer and the active layer or during growing of the active layer and the upper clad layer.

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