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1. 发明专利

JP2012087391A Sputtering target material, silicon-containing film forming method, and photomask blank 有权
标题翻译：溅射目标材料，含硅薄膜成型方法和光电隔离层
公开(公告)号：JP2012087391A
公开(公告)日：2012-05-10
申请号：JP2010237114
申请日：2010-10-22
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： KANEKO HIDEO , INAZUKI SADAOMI , YOSHIKAWA HIROKI
IPC分类号： C23C14/34 , G03F1/54
CPC分类号： C23C14/3414 , C23C14/0036 , C23C14/0676 , C23C14/564 , G03F1/54
摘要： PROBLEM TO BE SOLVED: To provide a silicon target material in which particles are not easily generated during a sputtering process, and to form a low-defect (high quality) silicon-containing film.SOLUTION: The silicon target material having a specific resistance of 20 Ω cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained as an advantage. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials may be used for sputtering film formation of the silicon-containing film. Furthermore, the sputtering film formation of the silicon-containing film may be performed by simultaneously using a silicon target material, a transition metal and silicon-containing target material or by simultaneously using a silicon target material and a transition metal target material.
摘要翻译：要解决的问题：提供在溅射工艺期间不容易产生颗粒的硅靶材料，并形成低缺陷（高质量）含硅膜。解决方案：使用室温下电阻率为20Ωcm以上的硅靶材料来形成含硅膜。硅靶材料可以是多晶的或非晶的。然而，当硅靶材料为单晶时，可以获得更稳定的放电状态。此外，由于其含氧量低，因此通过FZ法生长晶体的单晶硅是优选的高纯度硅靶材料。此外，优选具有n型导电性且含有供体杂质的靶材料，以获得稳定的放电特性。可以仅使用一种或多种硅靶材料来溅射含硅膜的成膜。此外，可以通过同时使用硅靶材料，过渡金属和含硅靶材料或者同时使用硅靶材料和过渡金属靶材料来进行含硅膜的溅射膜的形成。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011002639A Susceptor and flash irradiation method using the same, and method for producing photomask blank 有权
标题翻译：使用其的SUSCEPTOR AND FLASH IRRADIATION METHOD AND AND METHODS PRODUCING PHOTOMASK BLANK
公开(公告)号：JP2011002639A
公开(公告)日：2011-01-06
申请号：JP2009145320
申请日：2009-06-18
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： FUKAYA SOICHI , INAZUKI SADAOMI
IPC分类号： G03F1/50 , G03F1/54
摘要： PROBLEM TO BE SOLVED: To provide an optical film having a low stress and excellent in-plane uniformity of optical characteristics.SOLUTION: A susceptor is provided, which includes a high reflectance (R1) region and a low reflectance (R2) region in a region to mount a substrate (with a thickness L) that is chamfered by a length of D inwardly from an intersection between a plane including the major face of the substrate and a plane including an end face of the substrate, along the plane including the major face. The low reflectance region (30L) includes a region (30H) interposed between a rectangle c which is present inside a contour obtained by perpendicularly projecting the outermost end of the substrate onto the major face of the susceptor 30, spaced at a distance of (L-D×tanθ)×tanθ from the contour, and a rectangle d inside the contour, spaced at a distance of (D+L×tanθ). The high reflectance region (30H) includes an inner region of a rectangle e which is present inside the contour obtained by perpendicularly projecting the outermost end of the substrate onto the major face of the susceptor 30, spaced at a distance of {D+L×tanθ+α(L×tanθ)} (0
摘要翻译：要解决的问题：提供具有低应力和优异的光学特性的面内均匀性的光学膜。解决方案：提供了一种感受器，其包括高反射率（R1）区域和低反射率（R2）区域区域，用于将包括基板的主面的平面和包括基板的端面的平面之间的交点向内倒角的衬底（具有厚度L）沿着包括主体的平面的平面面对。低反射率区域（30L）包括插入在矩形c之间的区域（30H），矩形c存在于通过将基板的最外端垂直突出到基座30的主面上而形成的轮廓内，间隔开（LD ×tanθ）×tanθ，以及轮廓内的矩形d，间隔距离为（D + L×tanθ）。高反射率区域（30H）包括矩形e的内部区域，该内部区域存在于通过将基板的最外端垂直地突出到基座30的主面上而形成的轮廓内，间隔距离为{D + L× tanθ+α（L×tanθ）}（0 <α≤1），并且高反射率区域的外缘存在于轮廓内，间隔（D + L×tanθ）的距离，其中θ表示角度的倒角面相对于基底的主面。

3. 发明专利

JP2010267836A Etching method and method of processing photomask blank 有权
标题翻译：蚀刻方法和处理光电子空白的方法
公开(公告)号：JP2010267836A
公开(公告)日：2010-11-25
申请号：JP2009118289
申请日：2009-05-15
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： IGARASHI SHINICHI , INAZUKI SADAOMI , KANEKO HIDEO , YOSHIKAWA HIROKI , KONASE YOSHIAKI
IPC分类号： H01L21/3065
CPC分类号： G03F1/26 , G03F1/14 , G03F1/30 , G03F1/32 , G03F1/80 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： PROBLEM TO BE SOLVED: To provide an etching method which can etch multilayer films continuously in the same chamber while using a hard mask technique when dry-etching a multilayer film of a hard mask layer and a processed layer having etching selectivity to the hard mask layer and to provide a method of processing a photomask blank to which applies this etching method.
SOLUTION: When a resist pattern is transferred to a hard mask layer by first dry etching using the resist pattern on a processed layer formed on a substrate and the processed layer is pattern-processed by second dry etching using a hard mask pattern transferred to the hard mask layer, second dry etching is performed by changing the density of an accessory component without changing a major component of dry etching gas in an etching device in which first dry etching is done after first dry etching.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种蚀刻方法，其可以在使用硬掩模技术的同时在相同的室中连续蚀刻多层膜，当干蚀刻硬掩模层的多层膜和具有蚀刻选择性的处理层时并且提供一种处理应用该蚀刻方法的光掩模坯料的方法。解决方案：当通过使用在衬底上形成的处理层上的抗蚀剂图案的第一次干蚀刻将抗蚀剂图案转印到硬掩模层上时，通过使用转印的硬掩模图案的第二次干法蚀刻对经处理层进行图案处理在硬掩模层中，通过在不改变干蚀刻气体的主要成分的情况下改变辅助部件的密度来进行第二干蚀刻，其中在蚀刻装置中进行第一干蚀刻后的第一干蚀刻。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2009294681A Photomask blank and photomask 有权
标题翻译： PHOTOMASK BLANK和PHOTOMASK
公开(公告)号：JP2009294681A
公开(公告)日：2009-12-17
申请号：JP2009218431
申请日：2009-09-24
申请人： Shin-Etsu Chemical Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , IWAKATA MASAHIDE , TAKAGI MIKIO , FUKUSHIMA YUICHI , SAGA TADASHI
IPC分类号： G03F1/50 , G03F1/54
摘要： PROBLEM TO BE SOLVED: To provide a photomask blank having a light-shielding film that can be etched without giving a large load on a resist during an etching process and has sufficient chemical stability against a mask cleaning process necessary in the manufacturing process of a photomask, and to provide a photomask having a mask pattern formed thereon by using the above blank. SOLUTION: The photomask blank is a binary mask blank having a light-shielding film comprising a single layer or two or more layers formed directly or with another film interposed on a transparent substrate, and an antireflection film further layered thereon, characterized in that: at least one layer constituting the light-shielding film contains silicon and a transition metal as the main component; the molar ratio of silicon to transition metal is (4 to 15):1 (atomic ratio); and the optical density in the light-shielding film and the antireflection film together to exposure light is not less than 2.5. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有遮光膜的光掩模坯料，其可以在蚀刻过程中不会在抗蚀剂上施加大的负载而被蚀刻，并且具有足够的化学稳定性以抵抗制造过程中所需的掩模清洁过程的光掩模，并且通过使用上述坯料来提供其上形成有掩模图案的光掩模。解决方案：光掩模坯料是具有遮光膜的二进制掩模坯料，该遮光膜包括直接形成在其上的单层或两层或更多层，或者在透明基板上插入另一膜，以及其上层叠的防反射膜，其特征在于构成遮光膜的至少一层含有硅和过渡金属作为主要成分; 硅与过渡金属的摩尔比为（4〜15）：1（原子比）并且遮光膜和抗反射膜中的光密度与曝光光一起不小于2.5。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2012122088A Silicon target for sputtering film formation, and method for forming silicon-containing thin film 有权
标题翻译：用于溅射膜形成的硅靶和形成含硅薄膜的方法
公开(公告)号：JP2012122088A
公开(公告)日：2012-06-28
申请号：JP2010271796
申请日：2010-12-06
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , KANEKO HIDEO
IPC分类号： C23C14/34
CPC分类号： H01J37/3426 , C23C14/0676 , C23C14/14 , C23C14/3407 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide a silicon target for sputtering film formation, achieving formation of a high-quality silicon-containing thin film by suppressing dust generation during sputtering film formation.SOLUTION: An n-type silicon target material 10 and a metallic backing plate 20 are bonded to each other via a bonding layer 40. A conductive layer 30 made of a material having a work function smaller than that of the silicon target material 10 is provided on a surface of the silicon target material 10 on a side of the bonding layer 40. That is, the silicon target material 10 is bonded to the metallic backing plate 20 via the conductive layer 30 and the bonding layer 40. When silicon is a single crystal, a work function of n-type silicon is generally 4.05 eV, and therefore a work function of the material of the conductive layer 30 needs to be smaller than 4.05 eV. A material corresponding to the material of the conductive layer 30 contains one of a lanthanoid element, a rare-earth element, an alkali metal element, and an alkali-earth metal element as a main component.
摘要翻译：要解决的问题：为了提供用于溅射成膜的硅靶，通过抑制溅射成膜期间的粉尘产生，形成高质量的含硅薄膜。解决方案：n型硅靶材料10和金属背板20经由接合层40彼此接合。由具有比硅靶材料的功函数小的功函数的材料制成的导电层30 另外，在接合层40侧的硅靶材10的表面上设置有10个。另外，硅靶材10经由导电层30和接合层40与金属背板20接合。当硅是单晶，n型硅的功函数通常为4.05eV，因此导电层30的材料的功函数需要小于4.05eV。与导电层30的材料相对应的材料含有镧系元素，稀土元素，碱金属元素和碱土金属元素作为主要成分之一。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2010286665A Method of manufacturing photomask 有权
标题翻译：制造光电子的方法
公开(公告)号：JP2010286665A
公开(公告)日：2010-12-24
申请号：JP2009140374
申请日：2009-06-11
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： IGARASHI SHINICHI , INAZUKI SADAOMI , KANEKO HIDEO , YOSHIKAWA HIROKI , KONASE YOSHIAKI
IPC分类号： G03F1/54 , H01L21/027
CPC分类号： G03F1/26 , G03F1/30 , G03F1/32 , G03F1/80
摘要： PROBLEM TO BE SOLVED: To provide a method of processing a photomask blank to achieve precision processing of the photomask blank which has a shielding film mainly made of a silicon-based material layer containing transition metals having preferred optical properties and enabling precision processing and finely processing, especially when using a thinner resist. SOLUTION: In a first etching process, part of the shielding film which is constituted by upper and lower layers made of a silicon-based material containing the transition metals, at least the upper layer containing oxygen and/or nitrogen and the total content of oxygen and nitrogen of the upper layer being larger than that of the lower layer, is removed so that part of at least a transparent substrate of the lower layer is left using a resist pattern as an etching mask by fluorine-based dry etching. In a second etching process, the remainder which is not removed in the first etching process is removed for pattern processing by oxygen-containing chlorine dry etching. The processing of the upper layer functioning as an etching mask layer is performed by fluorine dry etching even when the film thickness of the resist film used for processing is about 100 nm or less, thereby the processing of the photomask used for lithography for forming the resist pattern with a minimum line width of ≤50 nm can be performed precisely. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种处理光掩模坯料以实现光掩模坯料的精密加工的方法，其具有主要由含有具有优选光学性质的过渡金属的硅基材料层制成的屏蔽膜，并且能够进行精密加工并精细加工，特别是当使用较薄的抗蚀剂时。解决方案：在第一蚀刻工艺中，由包含过渡金属的硅基材料制成的上层和下层构成的部分屏蔽膜至少含有氧和/或氮的上层和总量除去上层的氧和氮的含量大于下层的含量，使得通过氟基干蚀刻使用抗蚀剂图案作为蚀刻掩模留下至少下层的透明基板的一部分。在第二蚀刻工艺中，通过含氧氯干蚀刻去除在第一蚀刻工艺中未除去的剩余部分以进行图案处理。即使当用于加工的抗蚀剂膜的膜厚度为约100nm以下时，用作蚀刻掩模层的上层的处理也是通过氟干蚀刻进行的，因此用于形成抗蚀剂的光刻用光掩模的处理可以精确地执行最小线宽≤50nm的图案。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010237501A Method for inspecting photomask blank or intermediate thereof and determining the quality thereof 有权
标题翻译：检测光敏棉或其中间体的方法，并确定其质量
公开(公告)号：JP2010237501A
公开(公告)日：2010-10-21
申请号：JP2009086173
申请日：2009-03-31
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： INAZUKI SADAOMI , KANEKO HIDEO , YOSHIKAWA HIROKI
IPC分类号： G03F1/32 , G03F1/60 , G03F1/68
CPC分类号： G03F1/84 , G03F7/70783
摘要： PROBLEM TO BE SOLVED: To provide a method for inspecting photomask blank or intermediate thereof and determining the quality thereof, ensuring not to cause a change in surface shape, resulting in a dimensional error in machining, for the photomask blank including a light shielding film requiring high-accuracy machining and an optical functional film such as a phase shift film. SOLUTION: In this method for inspecting the photomask blank or intermediate thereof, the treatment includes: (A) a process of measuring a surface topography of a photomask blank or intermediate thereof having a film to be inspected for stress; (B) a process of removing the film to be inspected; and (C) a process of measuring surface topography of the treated substrate from which the film to be inspected is removed. By this treatment, surface topographies of both the photomask blank or intermediate thereof before the film to be inspected is removed and the treated substrate after the film to be inspected is removed are obtained, and the surface topographies are compared to thereby evaluate the stress of the film to be inspected. The method of manufacturing the photomask blank is optimized so that it is possible to manufacture a photomask blank having very low risk of causing a change in surface topography before and after etching the optical functional film and the machining functional film, and it is possible to provide the photomask blank ensuring that in manufacturing a photomask, the occurrence of a dimensional error due to a change in surface topography is reduced. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于检查光掩模坯料或其中间体并确定其质量的方法，确保不引起表面形状的变化，导致加工中的尺寸误差，对于包括光的光掩模坯料需要高精度加工的屏蔽膜和相移膜等光学功能膜。解决方案：在这种用于检查光掩模坯料或其中间体的方法中，处理包括：（A）测量具有要检查应力的膜的光掩模坯料或其中间体的表面形貌的方法; （B）去除被检膜的过程; 和（C）测量被处理基材的表面形貌的方法，从中去除待检查的膜。通过这种处理，除去在待检膜之前的光掩模坯料或其中间体的表面形貌，并且除去待检查的膜之后的处理过的基材，并比较表面形貌，从而评估电影要检查。对光掩模坯料的制造方法进行了优化，可以制造在蚀刻光学功能膜和加工功能膜前后表面形貌变化的风险非常低的光掩模坯料，并且可以提供光掩模坯料确保在制造光掩模时，由于表面形貌的变化引起的尺寸误差的发生减少。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010164779A Method of dry etching 有权
标题翻译：干蚀刻方法
公开(公告)号：JP2010164779A
公开(公告)日：2010-07-29
申请号：JP2009006929
申请日：2009-01-15
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： IGARASHI SHINICHI , KANEKO HIDEO , INAZUKI SADAOMI , NISHIKAWA KAZUHIRO
IPC分类号： G03F1/32 , G03F1/68 , G03F1/80 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To enable high-accuracy etching on a light-shielding film without giving damages to a phase shift film, even when no etching stopper film is used or even when a laminate of the same type of silicon-based materials is used, for example, the laminate of the light-shielding film of a silicon-based material as a phase shift film on the phase shift film of a silicon-based material is used. SOLUTION: A laminate is prepared, comprising: a single or multilayer first silicon-based material layer containing oxygen and/or nitrogen and optionally containing a transition metal; and a single or multilayer second silicon-based material layer formed adjacent to the first silicon-based material layer, optionally containing a transition metal and having a smaller total content of nitrogen and oxygen than that of the first silicon-based material layer. The second silicon-based material layer is selectively etched away by chlorine-based dry etching by setting a ratio of chlorine gas to oxygen gas so as to control the etching rate of the second silicon-based material layer to be larger than the etching rate of the first silicon-based material layer. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题为了能够对遮光膜进行高精度蚀刻而不会对相移膜造成损害，即使不使用蚀刻阻挡膜也可以使用相同类型的硅基使用材料，例如，硅基材料的相移膜上的硅基材料的遮光膜作为相移膜的叠层体被使用。解决方案：制备层压体，其包括：含有氧和/或氮并且任选地含有过渡金属的单层或多层第一硅基材料层; 以及与第一硅基材料层相邻形成的单个或多层第二硅基材料层，任选地含有过渡金属并且具有比第一硅基材料层的总含量更低的氮和氧的总含量。通过设定氯气与氧气的比例，通过氯基干蚀刻选择性地蚀刻第二硅基材料层，以便控制第二硅基材料层的蚀刻速率大于蚀刻速率第一硅基材料层。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2011123426A Photomask blank and method for manufacturing photomask 审中-公开
标题翻译： PHOTOMASK BLANK及其制造方法
公开(公告)号：JP2011123426A
公开(公告)日：2011-06-23
申请号：JP2009283198
申请日：2009-12-14
申请人： Shin-Etsu Chemical Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： KOJIMA YOSUKE , YOSHIKAWA HIROKI , INAZUKI SADAOMI , KOITABASHI RYUJI
IPC分类号： G03F1/32 , G03F1/54 , H01L21/027
CPC分类号： G03F1/30 , G03F1/32 , G03F1/80
摘要： PROBLEM TO BE SOLVED: To provide a photomask blank in which a pattern can be favorably formed.
SOLUTION: The photomask blank includes a chromium-free film 14 which can be etched by fluorine-based dry etching as well as by oxygen-containing chlorine-based dry etching, layered on a light-shielding film 13 containing chromium, which in turn cannot be substantially etched by fluorine-based dry etching but etched by oxygen-containing chlorine-based dry etching.
COPYRIGHT: (C)2011,JPO&INPIT

10. 发明专利

JP2010237692A Photomask blank and method of manufacturing photomask 有权
标题翻译： PHOTOMASK BLANK和制造光电子的方法
公开(公告)号：JP2010237692A
公开(公告)日：2010-10-21
申请号：JP2010122341
申请日：2010-05-28
申请人： Shin-Etsu Chemical Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , OKAZAKI SATOSHI , HARAGUCHI TAKASHI , SAGA TADASHI , KOJIMA YOSUKE , CHIBA KAZUAKI , FUKUSHIMA YUICHI
IPC分类号： G03F1/30 , G03F1/32 , G03F1/46 , G03F1/54 , G03F1/58 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce variation in pattern size due to density dependency of a pattern to be formed during dry etching processing on a light shield film as compared with a case wherein a conventional photomask blank having a light shield film is used, and to manufacture a mask with higher precision. SOLUTION: The present invention relates to a photomask blank as a material for a photomask provided with a mask pattern having, on a transparent substrate 1, a region which is transparent to exposure light and a region which is effectively opaque, the photomask blank having a light shield film 2 which is laminated on the transparent substrate 1 through or not through another film and can be etched by fluorine-based dry etching and made of metal or a metal compound, an etching mask film 4 which is formed on the light shield film 2 and made of metal or a metal compound having resistance to the fluorine-based dry etching, and an antireflective film 3 formed on the etching mask film. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：与使用具有遮光膜的常规光掩模坯料相比，为了减轻由于在干蚀刻处理期间形成的图案的密度依赖性对遮光膜的图案尺寸的变化，并且制造具有更高精度的掩模。解决方案：本发明涉及一种光掩模坯料，其用作具有掩模图案的光掩模的材料，该掩模图案在透明基板1上具有对曝光光透明的区域和有效不透明的区域，光掩模空白具有通过或不通过另一膜层压在透明基板1上的遮光膜2，并且可以通过氟基干蚀刻被蚀刻，由金属或金属化合物制成;蚀刻掩模膜4，其形成在遮光膜2，具有耐氟基干蚀刻性的金属或金属化合物，以及形成在蚀刻掩模膜上的防反射膜3。版权所有（C）2011，JPO＆INPIT

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