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1. 发明专利

JP2004224585A Single crystal of the manufacturing method and apparatus 审中-公开
公开(公告)号：JP2004224585A
公开(公告)日：2004-08-12
申请号：JP2003011032
申请日：2003-01-20
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： URANO MASAHIKO
IPC分类号： C30B15/28 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing a single crystal which realize automatic control over the whole process for manufacturing the single crystal by surely detecting the separation of the tail part of a single crystal from a molten liquid. SOLUTION: In the method for manufacturing the single crystal by which the single crystal having a straight drum part is pulled from a raw material molten liquid in a crucible by the Czochralski method and the diameter of the straight drum part is gradually reduced to form a tail part which is then separated from the raw material molten liquid, the separation of the tail part from the raw material molten liquid is detected from a change in the weight of the single crystal. Preferably, voltage is applied between the single crystal and the crucible when the change in the weight of the single crystal shows zero and the separation of the tail part of the single crystal from the raw material molten liquid is detected by a fact that current is not passed between the single crystal and the crucible. COPYRIGHT: (C)2004,JPO&NCIPI

2. 发明专利

JP2010100451A Method for measuring distance between melt level and lower edge part of structure in furnace, method for controlling melt level position using the same, method for producing single crystal and single crystal production device 有权
标题翻译：用于测量熔炉中的熔融水平和下边缘部分之间的距离的方法，使用该方法控制熔融水平位置的方法，用于生产单晶和单晶生产装置的方法
公开(公告)号：JP2010100451A
公开(公告)日：2010-05-06
申请号：JP2008271201
申请日：2008-10-21
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： URANO MASAHIKO
IPC分类号： C30B29/06 , C30B15/26
摘要： PROBLEM TO BE SOLVED: To correctly measure the distance between the lower edge of a heat insulation tube arranged around a single crystal and a melt level.
SOLUTION: In the method where, when a single crystal 3 is pulled up from a silicon melt 2 stored in a crucible 5a by a CZ (Czochralski) process, the relative distance between a melt level and the lower edge part of a structure 10 in a furnace is measured, at least, the growth point of the single crystal 3 as a contact point between the single crystal 3 and the melt level and the lower edge part of the structure 10 in the furnace is photographed from the outside of the furnace by a CCD (Charge Coupled Device) camera 11, the position at which the diameter of the single crystal 3 is made the maximum and the position at which the inside diameter of the structure 10 in the furnace is made the maximum are detected from the obtained image, a difference between the position of the growth point at which the diameter of the single crystal 3 is made the maximum and a position obtained by projecting the position at which the inside diameter of the structure 10 in the furnace is made the maximum on the melt level is obtained, the obtained difference of the positions is defined as a difference in the vertical direction on the image, and, using the difference of the positions in the vertical direction and a set angle to the vertical direction of the CCD camera 11, the relative distance between the melt level and the lower edge part of the structure 10 in the furnace is calculated.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：正确地测量布置在单晶周围的绝热管的下边缘与熔体水平之间的距离。解决方案：在通过CZ（Czochralski）工艺将单晶3从存储在坩埚5a中的硅熔体2拉出的方法中，熔融水平与熔融水平与下边缘部分之间的相对距离测量炉中的结构10，至少从单晶3与熔体水平之间的接触点的单晶3的生长点和炉中的结构10的下边缘部分的外观被拍摄通过CCD（电荷耦合装置）相机11的炉子，将单晶3的直径最大化的位置和炉中的结构10的内径设定为最大的位置被检测为获得的图像，使单晶3的直径成长最大的生长点的位置与通过使炉中的结构体10的内径的突出的位置成为最大的位置之间的差为最大在获得熔体水平的情况下，将获得的位置的差异定义为图像上的垂直方向的差异，并且使用垂直方向上的位置与CCD相机垂直方向的设定角度的差如图11所示，计算熔炉高度与炉内结构体10的下边缘部分的相对距离。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2004315256A Method and apparatus for manufacturing single crystal 审中-公开
公开(公告)号：JP2004315256A
公开(公告)日：2004-11-11
申请号：JP2003108681
申请日：2003-04-14
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： URANO MASAHIKO
IPC分类号： C30B15/02 , C30B15/04 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal by which the efficiency of additionally filling work of a polycrystalline raw material can be improved in a multi-pooling method, and the weight measurement of a single crystal rod, which have been required due to that the growing single crystal rod is made large in diameter and heavy in weight recently, can easily and inexpensively be automated and mechanized. SOLUTION: The method for manufacturing a single crystal is based on a Czochralski method, at least two single crystal rods are manufactured from one crucible by repeatedly performing at least a process for growing a single crystal rod from a raw material melt accommodated in a crucible, a process for measuring the weight of the grown single crystal rod within a furnace by a weight-detecting means installed in a single crystal manufacturing apparatus, a process for providing the polycrystalline raw material based on the measured weight, a process for taking the grown single crystal rod out of the furnace of the single crystal manufacturing apparatus, a process for additionally filling the provided polycrystalline raw material into the crucible, and a process for melting the polycrystalline raw material additionally filled in the crucible so as to prepare a raw material melt. COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2014101254A Raw material filling method, method of producing single crystal and apparatus for producing single crystal 有权
标题翻译：原料填充方法，生产单晶的方法和生产单晶的装置
公开(公告)号：JP2014101254A
公开(公告)日：2014-06-05
申请号：JP2012254568
申请日：2012-11-20
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： KITAGAWA MASANORI , URANO MASAHIKO , YOSHIDA KATSUHIRO
IPC分类号： C30B15/02 , C30B29/06
CPC分类号： C30B15/02 , C30B29/06 , Y10T117/1056
摘要： PROBLEM TO BE SOLVED: To provide a raw material filling method by which fracture of a quartz crucible and a recharge tube can be suppressed.SOLUTION: There is provided the raw material filling method in which a raw material is housed in a recharge tube including a quartz cylindrical member for housing the raw material and a cone valve for opening and closing an opening located at the bottom end of the cylindrical member, the recharge tube with the raw material housed therein is placed in a chamber, and the cone valve is lowered to open the opening at the bottom end of the cylindrical member, so that the raw material housed in the recharge tube is charged into a quartz crucible. The recharge tube and the quartz crucible are arranged in such a manner that the distance between the bottom end of the recharge tube and the raw material or melt in the quartz crucible is 200 mm or more and 250 mm or less when starting the raw material charge. The raw material is then charged while the quartz crucible and the cone valve of the recharge tube are simultaneously lowered in such a manner that the ratio (CL/SL) of a lowering speed (CL) of the quartz crucible to a lowering speed (SL) of the cone valve of the recharge tube is 1.3 or more and 1.45 or less.
摘要翻译：要解决的问题：提供可以抑制石英坩埚和再生管的断裂的原料填充方法。解决方案：提供原料填充方法，其中将原料容纳在包括用于容纳原料的石英圆柱形构件和用于打开和关闭位于圆柱形构件的底端的开口的锥形阀，将容纳有原料的再生管放置在室中，并将锥形阀降低到打开圆柱形构件底端的开口，使装在补给管中的原料装入石英坩埚中。补给管和石英坩埚以这样的方式配置，即当起动原料装料时，再生管的底端与石英坩埚中的原料或熔体之间的距离为200mm以上至250mm以下。然后在使石英坩埚和再充电管的锥阀同时降低的同时降低原料，使得石英坩埚的降低速度（CL）与降低速度（SL）的比（CL / SL））为1.3以上且1.45以下。

5. 发明专利

JP2011184238A Single crystal pulling apparatus 有权
标题翻译：单晶拉丝装置
公开(公告)号：JP2011184238A
公开(公告)日：2011-09-22
申请号：JP2010051261
申请日：2010-03-09
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： URANO MASAHIKO , KUDO HIDEO
IPC分类号： C30B29/06 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a single crystal pulling apparatus, wherein the leakage of a melt from a crucible is detected with high sensitivity and high precision.
SOLUTION: The single crystal pulling apparatus for producing a single crystal ingot by a Czochralski method includes: a crucible for accommodating a raw material melt; a main chamber for housing a heater for heating the raw material melt; a leaked melt receiving tray which is disposed on the bottom of the main chamber and accommodates the melt leaking from the crucible; and a detector which is arranged at the leaked melt receiving tray and detects the leakage of the melt. The detector has a metal member laid on the upper surface of the leaked melt receiving tray and a resistance measuring means for measuring the electric resistance of the metal member. The leakage of the melt is detected by the change of the electric resistance of the metal member measured by the resistance measuring means.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种单晶拉制装置，其中以高灵敏度和高精度检测熔体从坩埚中的泄漏。解决方案：通过切克劳斯基法生产单晶锭的单晶拉制装置包括：用于容纳原料熔体的坩埚; 用于容纳用于加热原料熔体的加热器的主室; 泄漏的熔体接收托盘，其设置在主室的底部并且容纳熔体从坩埚泄漏; 以及检测器，其布置在泄漏的熔体接收托盘处并检测熔体的泄漏。检测器具有放置在泄漏的熔体接收托盘的上表面上的金属构件和用于测量金属构件的电阻的电阻测量装置。通过由电阻测量装置测量的金属部件的电阻的变化来检测熔体的泄漏。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010100453A Method for detecting single crystal diameter, and method for producing single crystal and device for producing single crystal by using the same 有权
标题翻译：用于检测单晶直径的方法，以及用于生产单晶的方法和使用该晶体生产单晶的装置
公开(公告)号：JP2010100453A
公开(公告)日：2010-05-06
申请号：JP2008271225
申请日：2008-10-21
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： URANO MASAHIKO , MASUDA NAOKI
IPC分类号： C30B15/22
摘要： PROBLEM TO BE SOLVED: To provide a detection method which improves the detection precision of a single crystal diameter, and to provide a method for producing a single crystal and a device therefor by which diameter control is precisely performed based on the detected result, and a non-defective crystal is industrially stably grown in a high yield.
SOLUTION: In the method, where the diameter of the single crystal 3 is detected when a single crystal 3 is pulled up from a silicon melt 2 stored in a crucible 5a by a Czochralski method, at least the distance between the growth point where the diameter of the single crystal 3 is made the maximum in the growth points of the single crystal as the contact point between the single crystal 3 and the melt level and a reference point at which the inside diameter of a structure 10 in a furnace surrounding the single crystal 3 is made the maximum is measured using a camera 11 from the outside of the furnace, and the diameter of the single crystal 3 is calculated from a difference between the measured distance and the inside diameter of the structure 10 in the furnace, and the value obtained by the calculation is regarded as the diameter of the single crystal 3.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供提高单晶直径的检测精度的检测方法，并且提供一种单晶的制造方法及其装置，通过该方法，基于检测结果精确地进行直径控制，并且工业上稳定地以高产率生长出无缺陷晶体。解决方案：在通过切克劳斯基法从储存在坩埚5a中的硅熔体2拉出单晶3时检测到单晶3的直径的方法中，至少在生长点其中单晶3的直径在单晶的生长点中作为单晶3和熔体水平之间的接触点的最大值以及在周围的炉中的结构10的内径的参考点使用来自炉外部的照相机11测量单晶3的最大值，并且根据测量的距离和炉中的结构10的内径之间的差计算单晶3的直径，将计算得到的值视为单晶3的直径。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2006160538A Detector for detecting leakage of melt in single crystal pulling apparatus, single crystal pulling apparatus, and method for detecting leakage of melt 审中-公开
标题翻译：用于检测单晶拉丝装置中的熔体泄漏的检测器，单晶拉伸装置和用于检测熔体泄漏的方法
公开(公告)号：JP2006160538A
公开(公告)日：2006-06-22
申请号：JP2004350823
申请日：2004-12-03
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： URANO MASAHIKO , MIZUISHI KOJI , SONOKAWA SUSUMU
IPC分类号： C30B15/00
CPC分类号： C30B29/06 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a detector for detecting leakage of a silicon melt, which can suppress the dispersion of measured temperatures at the bottom part of a leaked melt receiving tray between batches by using the leaked melt receiving tray for storing the leaked melt and preventing the attainment of the leaked melt to a lower mechanism comprising metal components and cooling piping, and which can instantaneously detect a melt leaking with high accuracy and can rapidly and surely carry out operations such as alarming or stopping of driving even when the silicon melt flows out to the outside of a crucible, in a single crystal pulling apparatus based on a CZ method.
SOLUTION: The detector for detecting the leakage of the melt detects the melt leaking from the crucible at the leaked melt receiving tray, provided at the bottom part of a chamber of the single crystal pulling apparatus based on the CZ method. The detector has at least a temperature detection means for detecting the temperature at the bottom part of the leaked melt receiving tray, and a detection means for detecting the leakage of the melt by the change in the detection value of the temperature detection means. The temperature detection means has at least a temperature sensor and a protection cap for protecting the temperature sensor by covering it. The protection cap is abutted on the bottom part of the leaked melt receiving tray.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于检测硅熔体的泄漏的检测器，其可以通过使用用于存储熔体的泄漏的熔体接收托盘来抑制批次之间的泄漏的熔体接收托盘的底部处的测量温度的分散泄漏的熔体并且防止泄漏的熔体达到包括金属部件和冷却管道的下部机构，并且其可以以高精度瞬时检测熔体泄漏，并且可以快速且可靠地执行诸如警报或停止驾驶的操作，即使当在基于CZ方法的单晶拉制装置中，硅熔体流出到坩埚的外部。解决方案：用于检测熔体泄漏的检测器基于CZ方法检测在单晶拉制装置的室的底部设置在泄漏的熔体接收托盘处的坩埚中的熔体泄漏。检测器至少具有用于检测泄漏的熔体接收托盘的底部的温度的温度检测装置，以及用于通过温度检测装置的检测值的变化来检测熔体的泄漏的检测装置。温度检测装置具有至少一个温度传感器和保护帽，用于通过覆盖温度传感器来保护温度传感器。保护帽与泄漏的熔体接收托盘的底部抵接。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005170773A Initial melt surface position adjustment method, initial melt surface position adjustment apparatus, and single crystal production method 有权
标题翻译：初始熔融表面位置调整方法，初始熔融表面位置调整装置和单晶生产方法
公开(公告)号：JP2005170773A
公开(公告)日：2005-06-30
申请号：JP2003417162
申请日：2003-12-15
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： MASUDA NAOKI , URANO MASAHIKO
IPC分类号： C30B15/26
摘要： PROBLEM TO BE SOLVED: To provide an initial melt surface position adjustment apparatus capable of highly accurately detecting and adjusting the initial position of the surface of a raw material melt and thereby capable of producing a single crystal in a high productivity, to provide a method for the detection, and to provide a method for producing a single crystal.
SOLUTION: The initial melt surface position adjustment apparatus is an apparatus which adjusts the initial vertical position of the liquid surface of the raw material melt before growing a single crystal in the production of the single crystal by the CZ method and essentially consists of a light source, an optical camera which takes up the image of the formed seed crystal by means of the light source, an image processing means which processes the image taken up by the optical camera and detects the position of the seed crystal, a stop means which stops the front end of the seed crystal being in the detected position at the standard position set above the raw material melt, a detection means which detects the distance from the standard position to the raw material melt surface, and a moving means which horizontally moves the crucible holding the raw material melt according to the detected distance.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供能够高精度地检测和调整原料熔体的表面的初始位置并由此能够以高生产率制造单晶的初始熔融表面位置调节装置，以提供检测方法，提供单晶的制造方法。解决方案：初始熔体表面位置调节装置是一种在通过CZ方法生产单晶之前调节原料熔体在生长单晶之前的初始垂直位置的装置，并且基本上由光源，通过光源摄取所形成的晶种的图像的光学摄像机，处理由光学摄像机摄取的图像并检测晶种的位置的图像处理装置;停止装置其使晶种的前端处于设置在原料熔融物上方的标准位置处于检测位置的检测装置，检测从标准位置到原料熔融表面的距离的检测装置，以及水平移动的移动装置根据检测到的距离将保持原料的坩埚熔化。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2012148938A Method for measuring melt temperature, radiation thermometer, and method for manufacturing silicon single crystal 审中-公开
标题翻译：测量熔融温度的方法，辐射温度计和制造硅单晶的方法
公开(公告)号：JP2012148938A
公开(公告)日：2012-08-09
申请号：JP2011010060
申请日：2011-01-20
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： TOKUE JUNYA , MITAMURA NOBUAKI , URANO MASAHIKO , MASUDA NAOKI
IPC分类号： C30B29/06 , C30B15/26
CPC分类号： C30B29/06 , C30B15/26
摘要： PROBLEM TO BE SOLVED: To provide a method for measuring the temperature of the surface of a silicon melt, particularly, highly precisely the temperature before sticking a seed crystal, and a radiation thermometer, and to provide a method for manufacturing a silicon single crystal capable of manufacturing stably a non-transformation silicon single crystal by measuring highly precisely the temperature before sticking the seed crystal.SOLUTION: The method for manufacturing the silicon single crystal by the Czochralski method is characterized in that the temperature of the silicon melt is adjusted while the temperature of the surface of the silicon melt is measured by measuring intensity by selecting the radiation light within a range of 800-1,350 nm of a wavelength from the silicon melt 3 by using a radiation thermometer 1 before the seed crystal 16 is stuck on the silicon melt 3, and when the measured temperature of the surface of the silicon melt reaches a predetermined temperature, the seed crystal 16 is stuck on the silicon melt.
摘要翻译：要解决的问题：提供一种用于测量硅熔体表面的温度，特别是高精度地测量粘合晶种之前的温度和辐射温度计的方法，并提供一种制造硅能够通过在将晶种粘附之前高精度地测量温度来稳定地制造非转化硅单晶的单晶。解决方案：通过切克劳斯基法制造硅单晶的方法的特征在于，通过测量硅熔体表面的温度来测量硅熔体的温度，通过选择其中的辐射光来测量强度来测量硅熔体的温度在将晶种16粘附在硅熔体3上之前，通过使用辐射温度计1从硅熔体3的波长800-1,350nm的范围，并且当硅熔体的表面的测量温度达到预定温度晶种16粘在硅熔体上。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2012001387A Methods for measuring and controlling distance between lower end surface of heat-blocking member and surface of raw material melt, and method for manufacturing silicon single crystal 有权
标题翻译：用于测量和控制加热构件的下端表面和原料熔体表面之间的距离的方法，以及用于制造硅单晶的方法
公开(公告)号：JP2012001387A
公开(公告)日：2012-01-05
申请号：JP2010136937
申请日：2010-06-16
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： SUGAWARA TAKAYO , URANO MASAHIKO , HOSHI RYOJI
IPC分类号： C30B29/06 , C30B15/26
CPC分类号： C03B29/06 , C30B15/26 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a method for measuring distance between a lower end surface of a heat-blocking member and a surface of a raw material melt by which the distance between the lower end surface of the heat-blocking member and the surface of the raw material melt is stably and more accurately measured, in the manufacture of the silicon single crystal by the Czochralski method.SOLUTION: There is provided the method for measuring the distance between the lower end surface of the heat-blocking member 4 and the surface of the raw material melt, by which the distance between the lower end surface of the heat-blocking member 4 and the surface of the raw material melt in a crucible is measured by providing a reference reflector 5 in the heat-blocking member 4 located in the upper part of the raw material melt upon pulling a silicon single crystal while applying a magnetic field to the raw material melt 2 in the crucible by the Czochralski method. In the method, the reference reflector 5 is provided inside a recessed part 4b provided in the lower end surface 4a of the heat-blocking member, the distance A between the lower end surface 4a of the heat-blocking member 4 and the surface of the raw material melt is actually measured, the position of a mirror image of the reference reflector 5 reflected by the surface of the raw material melt is observed by a fixed point observation instrument 6, thereafter, the movement distance of the mirror image is measured by the fixed point observation instrument 6 while the silicon single crystal is pulled up, and the distance A between the lower end surface 4a of the heat-blocking member and the surface of the raw material melt is calculated from the actually measured value and the movement distance of the mirror image.
摘要翻译：要解决的问题：提供一种用于测量隔热构件的下端表面和原料熔体表面之间的距离的方法，通过该方法，隔热构件的下端表面与在通过切克劳斯基（Czochralski）法制造硅单晶时，原料熔体的表面被稳定且更准确地测量。解决方案：提供了用于测量隔热构件4的下端表面和原料熔体表面之间的距离的方法，通过该方法，隔热构件的下端面之间的距离如图4所示，在坩埚中熔融的原料表面通过在将硅单晶拉伸时将位于原料熔融体的上部的隔热部件4中设置参考反射体5，同时向原料通过Czochralski法在坩埚中熔化2。在该方法中，参考反射器5设置在设置在隔热构件的下端面4a中的凹部4b内，隔热构件4的下端面4a与表面之间的距离A 实际上测量原料熔体，通过固定点观察仪器6观察由原料熔融物表面反射的参考反射体5的镜像位置，此后，镜像的移动距离由固定点观察仪器6，同时将单晶体拉起，并且根据实际测量值和实际测量值的运动距离计算隔热构件的下端表面4a与原料熔体表面之间的距离A 镜像。版权所有（C）2012，JPO＆INPIT

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