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1. 发明专利

JP2014231448A シリコン単結晶製造方法有权
标题翻译：硅单晶的制造方法
公开(公告)号：JP2014231448A
公开(公告)日：2014-12-11
申请号：JP2013112521
申请日：2013-05-29
申请人：信越半導体株式会社 , Shin Etsu Handotai Co Ltd
发明人： SAKURADA MASAHIRO , TOKUE JUNYA , HOSHI RYOJI , FUSEGAWA IZUMI
IPC分类号： C30B29/06 , C30B15/04
CPC分类号： C30B15/04 , C30B15/305 , C30B29/06 , C30B30/04
摘要：【課題】酸素濃度が1.6?1018atoms/cm3(ASTM’79)以上でリンを高濃度ドープしたシリコン単結晶の製造方法を提供する。【解決手段】リンをドープしたシリコン融液3からMCZ法によってシリコン単結晶11を引き上げるリンドープシリコン単結晶11の製造方法であって、リンドープシリコン単結晶11中のリン濃度が2?1016atoms/cm3以上となるようにリンをドープし、シリコン融液3に中心磁場強度が2,000ガウス以上となるように水平磁場を印加することで、酸素濃度が1.6?1018atoms/cm3(ASTM’79)以上のリンドープシリコン単結晶11を製造する。【選択図】図1
摘要翻译：要解决的问题：提供氧浓度为1.6×10原子/厘米（ASTM'79）以上的磷 - 高掺杂硅单晶的制造方法。解决方案：在磷掺杂硅单晶的制造方法中通过使用MCZ法从磷掺杂硅熔体3拉出硅单晶11的晶体11，通过掺杂磷制造氧浓度为1.6×10原子/厘米（ASTM'79）以上的掺磷硅单晶11 使得磷掺杂硅单晶11中的磷浓度为2×10原子/ cm 2以上，并且通过向硅熔体3施加具有2,000高斯或更高的中心磁强度的水平磁场。

2. 发明专利

JP2012148938A Method for measuring melt temperature, radiation thermometer, and method for manufacturing silicon single crystal 审中-公开
标题翻译：测量熔融温度的方法，辐射温度计和制造硅单晶的方法
公开(公告)号：JP2012148938A
公开(公告)日：2012-08-09
申请号：JP2011010060
申请日：2011-01-20
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： TOKUE JUNYA , MITAMURA NOBUAKI , URANO MASAHIKO , MASUDA NAOKI
IPC分类号： C30B29/06 , C30B15/26
CPC分类号： C30B29/06 , C30B15/26
摘要： PROBLEM TO BE SOLVED: To provide a method for measuring the temperature of the surface of a silicon melt, particularly, highly precisely the temperature before sticking a seed crystal, and a radiation thermometer, and to provide a method for manufacturing a silicon single crystal capable of manufacturing stably a non-transformation silicon single crystal by measuring highly precisely the temperature before sticking the seed crystal.SOLUTION: The method for manufacturing the silicon single crystal by the Czochralski method is characterized in that the temperature of the silicon melt is adjusted while the temperature of the surface of the silicon melt is measured by measuring intensity by selecting the radiation light within a range of 800-1,350 nm of a wavelength from the silicon melt 3 by using a radiation thermometer 1 before the seed crystal 16 is stuck on the silicon melt 3, and when the measured temperature of the surface of the silicon melt reaches a predetermined temperature, the seed crystal 16 is stuck on the silicon melt.
摘要翻译：要解决的问题：提供一种用于测量硅熔体表面的温度，特别是高精度地测量粘合晶种之前的温度和辐射温度计的方法，并提供一种制造硅能够通过在将晶种粘附之前高精度地测量温度来稳定地制造非转化硅单晶的单晶。解决方案：通过切克劳斯基法制造硅单晶的方法的特征在于，通过测量硅熔体表面的温度来测量硅熔体的温度，通过选择其中的辐射光来测量强度来测量硅熔体的温度在将晶种16粘附在硅熔体3上之前，通过使用辐射温度计1从硅熔体3的波长800-1,350nm的范围，并且当硅熔体的表面的测量温度达到预定温度晶种16粘在硅熔体上。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2010132490A Method for detecting the diameter of single crystal, and single crystal pulling apparatus 有权
标题翻译：用于检测单晶直径和单晶拉丝装置的方法
公开(公告)号：JP2010132490A
公开(公告)日：2010-06-17
申请号：JP2008309484
申请日：2008-12-04
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： TOKUE JUNYA , YANAGIMACHI TAKAHIRO
IPC分类号： C30B15/26 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a method for detecting the diameter of a single crystal capable of improving the measurement accuracy of a large, heavy crystal and achieving improvement in the yield of the single crystal and reduction of quality variation thereof in a method for detecting the diameter of a single crystal grown by the CZ process, and to provide a single crystal pulling apparatus. SOLUTION: The method for detecting the diameter of the single crystal grown by the Czochralski method includes the steps of: detecting the diameter of the single crystal by both a camera and a load cell, respectively; correcting the diameter detected by the camera using the difference between the diameter detected by the camera and the diameter calculated by the load cell, a correction factor α previously determined depending on the growth rate of the single crystal, and a cone shape correction determined from the relation between the parameter showing the shape of the cone part of the single crystal and the diameter of the body part of the previously grown single crystal; and defining the value obtained by the correction as the diameter of the single crystal. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于检测能够提高大型重晶体的测量精度的单晶的直径的方法，并且实现单晶的产率的提高以及其中的质量变化的降低用于检测通过CZ工艺生长的单晶的直径的方法，并提供单晶拉制装置。解决方案：用于检测通过切克劳斯基法生长的单晶的直径的方法包括以下步骤：分别通过照相机和称重传感器检测单晶的直径; 使用由照相机检测的直径与由称重传感器计算的直径之间的差异校正由照相机检测到的直径，根据单晶的生长速率预先确定的校正因子α和从单晶的增长率确定的锥形校正表示单晶锥部的形状的参数与以前生长的单晶的主体部分的直径之间的关系; 并将通过校正获得的值定义为单晶的直径。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010132489A Method for producing silicon single crystal 有权
标题翻译：生产硅单晶的方法
公开(公告)号：JP2010132489A
公开(公告)日：2010-06-17
申请号：JP2008309444
申请日：2008-12-04
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： TOKUE JUNYA , YANAGIMACHI TAKAHIRO , NAGAI NAOKI , FUSEGAWA IZUMI
IPC分类号： C30B29/06 , C30B15/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal in which the productivity in producing a single crystal is improved by melting a seed crystal with good accuracy before moving to a crystal growing step, improving the accuracy of the diameter of the single crystal at the start of the crystal growing, and reusing the seed crystal to reduce the labor and time for replacing the seed crystal.
SOLUTION: In the method for producing the silicon single crystal by the CZ process, the seed crystal is melted while detecting the diameter of the tip part of the seed crystal with a CCD camera; when the detected seed crystal has a diameter that is large enough to move to the crystal growing step, the step moves to the crystal growing step; then, the single crystal is grown while detecting the diameter of the single crystal with the CCD camera; when the diameter of the detected single crystal is less than the diameter required for pulling up a single crystal rod, the step moves to a separation step; the tip of the single crystal is formed into a sharpened shape before the single crystal is separated from the silicon melt; the temperature of the silicon melt is adjusted; and then the single crystal rod is again pulled up by using the separated single crystal as a new seed crystal.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种通过在移动到晶体生长步骤之前以高精度熔化晶种来提高单晶生产率的硅单晶的制造方法，提高了晶体生长步骤的准确性在晶体生长开始时单晶的直径，并且重新使用晶种以减少用于更换晶种的劳动和时间。解决方案：在通过CZ工艺生产硅单晶的方法中，晶体熔化，同时用CCD照相机检测晶种的尖端部分的直径; 当检测到的晶种的直径足够大以移动到晶体生长步骤时，该步骤移动到晶体生长步骤; 然后，使用CCD照相机检测单晶的直径，生长单晶; 当检测到的单晶的直径小于拉出单晶棒所需的直径时，该步骤移动到分离步骤; 在单晶与硅熔体分离之前，将单晶的尖端形成为锐化形状; 调节硅熔体的温度; 然后通过使用分离的单晶作为新的晶种再次拉高单晶棒。版权所有（C）2010，JPO＆INPIT

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