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1. 发明专利

JP2010095425A Method for producing silicon single crystal 有权
标题翻译：生产硅单晶的方法
公开(公告)号：JP2010095425A
公开(公告)日：2010-04-30
申请号：JP2008269511
申请日：2008-10-20
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： NAGAI NAOKI , FUSEGAWA IZUMI
IPC分类号： C30B29/06 , C30B15/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing silicon single crystals, where the success rate in the elimination of dislocation is improved, further, the minimum diameter in the vicinity of seed crystals is prevented from being made smaller than the diameter wherein single crystal rods can be pulled up, to attain large diameters, and the productivity of the single crystal rods with high weight is improved. SOLUTION: In a method for producing silicon single crystals by a CZ (Czochralski) method, the surface temperature of a melt is measured by an optical thermometer, and based on the measured temperature, while controlling the surface temperature of the melt, seed crystals are lowered or the face of the silicon melt is raised, the tip parts of the seed crystals are brought into contact with the silicon melt, thereafter, the seed crystals are melted, the seed crystals in the seed crystal melting stage are separated from the silicon melt, again, the frequency at which the tip parts of the seed crystals are brought into contact with the silicon melt is detected, the surface temperature of the melt is corrected in accordance with the corrected frequency, the seed crystals are melted in the corrected surface temperature of the melt, and thereafter, without performing necking, a crystal growing stage is performed so as to pull up single crystal rods. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：待解决的问题：为了提供一种提高消除位错成功率的硅单晶的方法，此外，防止晶种附近的最小直径小于直径其中可以拉起单晶棒以获得大直径，并且提高了具有高重量的单晶棒的生产率。解决方案：在通过CZ（Czochralski）方法制造硅单晶的方法中，通过光学温度计测量熔体的表面温度，并且基于测量的温度，同时控制熔体的表面温度，种子晶体降低或硅熔体的表面升高，晶种的尖端部分与硅熔体接触，然后晶种熔化，晶种熔融阶段的晶种从再次检测晶种的尖端部分与硅熔体接触的频率，熔融物的表面温度根据校正的频率进行校正，晶种熔化在熔融物的校正表面温度，然后在不进行颈缩的情况下，进行晶体生长阶段以拉出单晶棒。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2008120623A Single crystal pulling method 有权
标题翻译：单晶拉拔方法
公开(公告)号：JP2008120623A
公开(公告)日：2008-05-29
申请号：JP2006304859
申请日：2006-11-10
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： NAGAI NAOKI , FUSEGAWA IZUMI
IPC分类号： C30B29/06 , C30B15/20
摘要： PROBLEM TO BE SOLVED: To provide a single crystal pulling method for growing a single crystal by a Czochralski method, by which a large size single crystal can be produced at high productivity and with high yield by suppressing a solid generated in a place other than the growth interface of a growing single crystal in a supercooled melt during tail process.
SOLUTION: The single crystal pulling method for growing the single crystal by a Czochralski method includes at least: a diameter-enlarging step for forming a diameter-enlarged part after bringing a seed crystal into contact with a melt in a crucible; a straight body step for growing a straight body part; and a tail step for forming a tail part, wherein an annular structure is arranged above the surface of the melt so as to surround a growing single crystal and the growing single crystal is pulled while controlling the distance between the lower end of the structure and the surface of the melt. The method is characterized in that the growing single crystal is pulled while controlling the distance between the lower end of the structure and the surface of the melt so that the distance between the lower end of the structure and the surface of the melt in the tail step becomes shorter than the distance between the lower end of the structure and the surface of the melt in the straight body step.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供通过切克劳斯基法生长单晶的单晶拉制方法，通过该方法可以以高生产率和高产率生产大尺寸单晶，通过抑制在一个地方产生的固体除了尾气过程中过冷熔体中生长的单晶的生长界面外。解决方案：通过切克劳斯基法生长单晶的单晶拉制方法至少包括：使晶种与坩埚中的熔体接触后形成直径扩大部分的直径扩大步骤; 用于生长直体部分的直身体步骤; 以及用于形成尾部的尾部步骤，其中环形结构布置在熔体表面之上，以便包围增长的单晶，并且拉伸生长的单晶，同时控制结构的下端和熔体表面。该方法的特征在于，在控制结构的下端和熔体的表面之间的距离的同时拉伸生长的单晶，使得结构的下端与尾部步骤中的熔体的表面之间的距离变得比在直体台阶中的结构的下端和熔体的表面之间的距离短。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2010132489A Method for producing silicon single crystal 有权
标题翻译：生产硅单晶的方法
公开(公告)号：JP2010132489A
公开(公告)日：2010-06-17
申请号：JP2008309444
申请日：2008-12-04
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： TOKUE JUNYA , YANAGIMACHI TAKAHIRO , NAGAI NAOKI , FUSEGAWA IZUMI
IPC分类号： C30B29/06 , C30B15/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal in which the productivity in producing a single crystal is improved by melting a seed crystal with good accuracy before moving to a crystal growing step, improving the accuracy of the diameter of the single crystal at the start of the crystal growing, and reusing the seed crystal to reduce the labor and time for replacing the seed crystal.
SOLUTION: In the method for producing the silicon single crystal by the CZ process, the seed crystal is melted while detecting the diameter of the tip part of the seed crystal with a CCD camera; when the detected seed crystal has a diameter that is large enough to move to the crystal growing step, the step moves to the crystal growing step; then, the single crystal is grown while detecting the diameter of the single crystal with the CCD camera; when the diameter of the detected single crystal is less than the diameter required for pulling up a single crystal rod, the step moves to a separation step; the tip of the single crystal is formed into a sharpened shape before the single crystal is separated from the silicon melt; the temperature of the silicon melt is adjusted; and then the single crystal rod is again pulled up by using the separated single crystal as a new seed crystal.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种通过在移动到晶体生长步骤之前以高精度熔化晶种来提高单晶生产率的硅单晶的制造方法，提高了晶体生长步骤的准确性在晶体生长开始时单晶的直径，并且重新使用晶种以减少用于更换晶种的劳动和时间。解决方案：在通过CZ工艺生产硅单晶的方法中，晶体熔化，同时用CCD照相机检测晶种的尖端部分的直径; 当检测到的晶种的直径足够大以移动到晶体生长步骤时，该步骤移动到晶体生长步骤; 然后，使用CCD照相机检测单晶的直径，生长单晶; 当检测到的单晶的直径小于拉出单晶棒所需的直径时，该步骤移动到分离步骤; 在单晶与硅熔体分离之前，将单晶的尖端形成为锐化形状; 调节硅熔体的温度; 然后通过使用分离的单晶作为新的晶种再次拉高单晶棒。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2005320203A Method for manufacturing silicon single crystal, and silicon single crystal 有权
标题翻译：硅单晶和硅单晶的制造方法
公开(公告)号：JP2005320203A
公开(公告)日：2005-11-17
申请号：JP2004140032
申请日：2004-05-10
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： HOSHI RYOJI , NAGAI NAOKI , FUSEGAWA IZUMI
IPC分类号： C30B29/06 , C30B15/04
CPC分类号： C30B15/04 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide such a method for manufacturing a carbon-doped silicon single crystal as is capable of doping easily and inexpensively the carbon into a silicon single crystal and besides of controlling well precisely a concentration of the carbon in a silicon single crystal.
SOLUTION: The method for manufacturing a carbon-doped silicon single crystal, comprising a method for manufacturing a silicon single crystal with doping the carbon by the czochralski method, is characterized by filling a silicon polycrystal raw material and one carbon dopant selected from an organic compound, a carbon powder and a silicon wafer, and an organic compound and a carbon powder, into a crucible and then melting it, and thereafter by growing a silicon single crystal from the above molten liquid. And the carbon-doped silicon single crystal is manufactured by the above method.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供这样的碳掺杂硅单晶的制造方法，其能够容易且廉价地将碳掺杂到硅单晶中，并且除了精确地控制碳的浓度之外硅单晶。解决方案：用于制造掺杂硅的单晶的方法，其特征在于，将通过切克斯基法掺杂碳的单晶硅制造方法，其特征在于，将多晶硅原料和一种选自有机化合物，碳粉末和硅晶片以及有机化合物和碳粉末加入到坩埚中，然后使其熔融，然后通过从上述熔融液体中生长硅单晶。并且通过上述方法制造碳掺杂硅单晶。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005187244A Method for manufacturing single crystal and single crystal 有权
标题翻译：制造单晶和单晶的方法
公开(公告)号：JP2005187244A
公开(公告)日：2005-07-14
申请号：JP2003428839
申请日：2003-12-25
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： SONOKAWA SUSUMU , NAGAI NAOKI , FUSEGAWA IZUMI
IPC分类号： C30B15/20 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing single crystals, by which a plurality of single crystals, each having a respectively desired crystal quality, can be manufactured without changing structures in a chamber of a single crystal production apparatus when the plurality of single crystals are grown in the production of the single crystals by a CZ method.
SOLUTION: In the method for manufacturing at least two or more single crystals by pulling the single crystals from a raw material melt in a chamber by the CZ method, when at least two or more single crystals are grown, at least two or more single crystals, each having a respectively desired crystal quality, are manufactured by regulating the distance between the surface of the raw material melt and a heat shielding member arranged opposite to the surface of the raw material melt in the chamber to a value at which the quality of a relevant single crystal becomes within a target crystal standard, every time when the growth of each single crystal is started, then adjusting crystal temperature gradient G, and controlling the pulling speed V to a value at which the quality of a relevant single crystal becomes within a target crystal standard, depending on the growth of respective single crystals.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造单晶的方法，通过该方法可以在不改变单晶制造装置的室内的结构的情况下制造各具有分别期望的晶体质量的多个单晶，通过CZ法在单晶的生产中生长多个单晶。解决方案：在通过CZ方法从室中的原料熔体中拉出单晶而制造至少两种或更多种单晶的方法中，当生长至少两种或更多种单晶时，至少两种或更多种通过将原料熔体的表面与在室中的原料熔融物的表面相对布置的隔热构件之间的距离调节到具有分别期望的晶体质量的更多单晶，相关单晶的质量变成目标晶体标准，每当开始每个单晶的生长时，调整晶体温度梯度G，并将拉伸速度V控制为相关单晶质量的值取决于各单晶的生长而变为目标晶体标准。版权所有（C）2005，JPO＆NCIPI

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