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1. 发明专利

JP2004335842A Resist component removing method, sog component removing method, and removing liquid therefor 审中-公开
公开(公告)号：JP2004335842A
公开(公告)日：2004-11-25
申请号：JP2003131468
申请日：2003-05-09
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： KUBOTA HIROSHI , NISHIKAWA KAZUHIRO , SUZUKI MASAYUKI , TANIGUCHI RYOSUKE
IPC分类号： H01L21/768 , H01L21/027 , H01L21/304 , H01L21/308
摘要： PROBLEM TO BE SOLVED: To remove a resist component or an SOG component adhering to a location other than a specified location on the surface of a substrate, in a process of resist film or SOG film formation by the application of resist liquid or SOG liquid onto the specified location on the surface of a substrate by spin-coating, so that the circumference of the resist film or of the SOG retained unsolved at the specified location is protected from erosion, the films are protected from exfoliation, and the removal is accomplished with their swells suppressed to a level not to cause a problem.
SOLUTION: In this method, a resist component or an SOG component adhering to a location other than a specified location on the surface of a substrate is melted and removed by removing liquid, in a process of resist film or SOG film formation by the application of resist liquid or SOG liquid to the specified location by spin-coating. The removing liquid contains an organic solvent or a surfactant.
COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2005285996A Thin film removing apparatus and method 审中-公开
标题翻译：薄膜去除装置和方法
公开(公告)号：JP2005285996A
公开(公告)日：2005-10-13
申请号：JP2004095964
申请日：2004-03-29
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： SUZUKI MASAYUKI , NAKATSU MASAYUKI , NISHIKAWA KAZUHIRO
IPC分类号： G03F7/30 , B08B3/02 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a thin film removing apparatus which neatly peels off and removes an unwanted part of a thin film formed on a substrate having a square shape which attaches to the periphery, especially, the entire corners, of the substrate in a short time.
SOLUTION: This is an apparatus for peeling off and removing the unwanted part of the thin film formed on the substrate having a square shape. The apparatus includes at least nozzle heads for a corner, each so located as to be overlaid above a corner where one principal plane and two side faces of the substrate cross each other. Each nozzle head for a corner has a remover supply port for supplying a remover for peeling off the thin film from the principal plane side at the corner of the substrate and a waste suction port for sucking and disposing the remover after dissolving the thin film from the side face side at the corner of the substrate.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种薄膜去除装置，其完全剥离并除去形成在具有正方形形状的基板上的不需要的部分，该薄膜附着到周边，特别是整个角部，底物在短时间内。解决方案：这是用于剥离和去除形成在具有正方形形状的基板上的薄膜的不期望部分的装置。该装置至少包括用于拐角的喷嘴头，每个喷嘴头都被定位成覆盖在基板的一个主平面和两个侧面彼此交叉的角部上方。用于角部的每个喷嘴头具有用于提供从基板的角部的主平面侧剥离薄膜的去除器的去除剂供给口，以及用于在将薄膜从侧面在基板的拐角处。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2013057739A Photomask blank, photomask and method for manufacturing the same 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK及其制造方法
公开(公告)号：JP2013057739A
公开(公告)日：2013-03-28
申请号：JP2011195049
申请日：2011-09-07
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： INAZUKI SADAOMI , IGARASHI SHINICHI , NISHIKAWA KAZUHIRO , YOSHIKAWA HIROKI
IPC分类号： G03F1/54
CPC分类号： G03F1/26 , G03F1/14 , G03F1/38 , G03F1/50
摘要： PROBLEM TO BE SOLVED: To provide a photomask blank having a novel hard mask film that enables processing with increased accuracy during processing of a fine pattern on an optical film formed of a transition metal silicon compound material using a thinner hard mask film made of a chromium-based material, a photomask manufacturing with the photomask blank, and a manufacturing method for the photomask.SOLUTION: The photomask blank comprises: a transparent substrate; an optical film formed on the transparent substrate and formed of a transition metal silicon compound material; and a hard mask film for precision processing of the optical film. The hard mask film is a multilayer film formed of a chromium-based material. The multilayer film includes: a first layer that is disposed adjoining to the optical film, is formed of a chromium-based material containing oxygen by 20 to 60 atom% and has a thickness of 0.5 nm or more and less than 5.0 nm; and a second layer that is disposed adjoining to the first layer, is formed of a chromium-based material containing chromium by 50 atom% or more and has a lower oxygen content percentage than that of the first layer. The thickness of the entire hard mask film is 2.0 nm or more and less than 10 nm. Etching durability of a hard mask film against fluorine-based dry etching can be improved and, an optical film comprising a transition metal silicon compound material can be precisely processed by use of a hard mask pattern even when a thinner hard mask film is used.
摘要翻译：解决的问题：提供一种具有新颖的硬掩模膜的光掩模坯料，其能够使用更薄的硬掩模膜在由过渡金属硅化合物材料形成的光学膜上处理精细图案期间以更高的精度进行处理铬基材料，用光掩模坯料制造的光掩模，以及光掩模的制造方法。光掩模坯料包括：透明基板; 在透明基板上形成的由过渡金属硅化合物材料形成的光学膜; 以及用于光学膜的精密加工的硬掩模膜。硬掩模膜是由铬基材料形成的多层膜。多层膜包括：与光学膜相邻配置的第一层，由含有20〜60原子％的氧的铬系材料形成，厚度为0.5nm以上且小于5.0nm的厚度; 并且与第一层相邻设置的第二层由含有50原子％以上的铬并且具有比第一层低的氧含量百分比的铬基材料形成。整个硬掩模膜的厚度为2.0nm以上且小于10nm。可以提高硬掩模膜对氟基干蚀刻的蚀刻耐久性，并且即使使用更薄的硬掩模膜，也可以通过使用硬掩模图案精确地加工包含过渡金属硅化合物材料的光学膜。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012053458A Binary photomask blank and method for manufacturing binary photomask 有权
标题翻译：二进制光子空白和制造二进制光子的方法
公开(公告)号：JP2012053458A
公开(公告)日：2012-03-15
申请号：JP2011162793
申请日：2011-07-26
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： YOSHIKAWA HIROKI , INAZUKI SADAOMI , NISHIKAWA KAZUHIRO , KANEKO HIDEO
IPC分类号： G03F1/54
CPC分类号： G03F1/14 , G03F1/32 , G03F1/50 , G03F1/58
摘要： PROBLEM TO BE SOLVED: To provide a binary photomask blank having a thin light-shielding film capable of substantially shielding exposure light and suppressing a ghost pattern by substantially reducing reflectivity of both faces of a substrate to a practically uncontroversial level.SOLUTION: The binary photomask blank has on a transparent substrate a light-shielding film including a substrate-side compositionally graded layer and a surface-side compositionally graded layer, having a thickness of 35-60 nm, and composed of a silicon base material containing a transition metal and nitrogen and/or oxygen. The substrate-side compositionally graded layer has a thickness of 10-58.5 nm, transition metal:silicon is 1:2-1:9 (atomic ratio), and a total content of nitrogen and oxygen is 25-40 atom% at the transparent substrate side and is 10-23 atom% at the side separating from the transparent substrate. The surface-side compositionally graded layer has a thickness of 1.5-8 nm, the transition metal:silicon is 1:2-1:9, and a total content of nitrogen and oxygen is 10-45 atom% at the transparent substrate side and is 45-55 atom% at the side separating from the transparent substrate.
摘要翻译：要解决的问题：提供一种具有薄的遮光膜的二进制光掩模坯料，其能够基本上屏蔽曝光光并且通过将基板的两个面的反射率基本上降低到几乎无争议的水平来抑制重影图案。解决方案：二元光掩模坯料在透明基板上具有包括基板侧组成梯度层和表面侧组成梯度层的遮光膜，其厚度为35-60nm，由硅含有过渡金属和氮和/或氧的基材。基板侧组成梯度层的厚度为10-58.5nm，过渡金属：硅为1：2-1：9（原子比），透明的氮和氧的总含量为25〜40原子％并且在与透明基板分离的一侧为10-23原子％。表面侧成分梯度层的厚度为1.5-8nm，过渡金属：硅为1：2-1：9，透明基板侧的氮和氧的总含量为10-45原子％，在与透明基板分离的一侧为45-55原子％。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2005326581A Method for evaluating in-plane distribution of resist pattern dimensions, method for producing photomask blank, photomask blank, and management method for resist pattern forming process 有权
标题翻译：用于评估电阻图案尺寸的平面内分布的方法，用于生产光电隔离膜的方法，光电隔离层和用于电阻形成工艺的管理方法
公开(公告)号：JP2005326581A
公开(公告)日：2005-11-24
申请号：JP2004144114
申请日：2004-05-13
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： NISHIKAWA KAZUHIRO
IPC分类号： G03F1/50 , G03F1/68 , G03F1/80 , G03F7/26 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a simple method for evaluating the in-plane distribution of the resist pattern dimensions of a photomask blank coated with a resist, and to provide a process management method for a lithography line for mask production.
SOLUTION: In the method for evaluating the in-plane distribution of resist pattern dimensions, the resist film thickness of a photomask blank coated with a resist is measured at a plurality of points; the photomask blank is subjected to development including processing with a developer without exposing; and the resist film thickness of the photomask blank is remeasured at a plurality of points to obtain the in-plane distribution of the variations in the resist film thickness of the photomask blank, from the in-plane distribution, the photomask blank is subjected to exposure and development, and the quality of the in-plane distribution of the resulting resist pattern dimensions is. By utilizing the evaluating method, a processing is managed so that the conditions for the development are optimum.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于评估涂覆有抗蚀剂的光掩模坯料的抗蚀剂图案尺寸的平面内分布的简单方法，并提供用于掩模生产的光刻线的工艺管理方法。解决方案：在用于评估抗蚀剂图案尺寸的面内分布的方法中，在多个点处测量涂覆有抗蚀剂的光掩模坯料的抗蚀剂膜厚度; 对光掩模坯料进行显影，包括用显影剂处理而不暴露; 并且在多个点处重新测量光掩模坯料的抗蚀剂膜厚度，以从面内分布获得光掩模坯料的抗蚀剂膜厚度的变化的面内分布，光掩模坯料经受曝光并且所得到的抗蚀剂图案尺寸的面内分布的质量是。通过利用评价方法，管理处理，使得开发条件是最佳的。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2004335845A Device and head for removing resist component 审中-公开
公开(公告)号：JP2004335845A
公开(公告)日：2004-11-25
申请号：JP2003131512
申请日：2003-05-09
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： TANIGUCHI RYOSUKE , NISHIKAWA KAZUHIRO
IPC分类号： G03F7/16 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist component removing device and a resist component removing head for use in the process of forming a resist film by spin-coating a resist liquid onto a given surface of a substrate, capable of efficiently removing the resist component depositing on the peripheral faces of the substrate without any resist stripper remaining on the substrate surface after resist component removal, and thereby capable of reducing defects in the resist film outer circumference to the maximum possible extent. SOLUTION: The head for dissolving the resist component sticking to the outer circumference of a substrate into the resist stripper for removal has a U-shape cross section enclosing the peripheries of the upper and lower surfaces of a substrate including the outer circumference with a resist film formed thereon. Supply channels are respectively formed facing each other in the upper and lower faces of the head, and a discharge channel is provided in the side of the head. The resist component removing device comprises, besides the head, a supply unit for supplying the resist stripper to the head and a suction unit for sucking the resist stripper out of the head. COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2004333991A Method for removing resist component 审中-公开
标题翻译：拆卸电阻元件的方法
公开(公告)号：JP2004333991A
公开(公告)日：2004-11-25
申请号：JP2003131482
申请日：2003-05-09
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： NISHIKAWA KAZUHIRO , SUZUKI MASAYUKI , KUBOTA HIROSHI , TANIGUCHI RYOSUKE
IPC分类号： G03F7/16 , G03F7/42 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for removing a resist component by which, in the process of applying a resist liquid by a spin coating method on a specified face of a substrate to form a resist film, a resist component depositing in a part except for the specified face of the substrate can be efficiently removed in a short time, and by which the resist component can be removed without causing corrosion or peeling in the edge part of the resist film not dissolved but to be left on the specified face, while preventing build-up of the removed resist component as much as possible.
SOLUTION: In the process of applying a resist liquid by a spin coating method on a specified face of a substrate to form a resist film, a resist component depositing on a part except for the specified face of the substrate is removed by dissolving the resist component in a stripping liquid. A heated stripping liquid is used for the above stripping liquid.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种除去抗蚀剂成分的方法，其中在通过旋涂法将抗蚀剂液体涂覆在基板的特定表面上以形成抗蚀剂膜的方法中，将抗蚀剂组分沉积可以在短时间内有效地除去基板的指定面以外的部分，并且可以除去抗蚀剂成分而不会在未溶解的抗蚀剂膜的边缘部分中产生腐蚀或剥离而残留在其上同时尽可能地防止去除的抗蚀剂组分的积聚。解决方案：在通过旋涂法将抗蚀剂液体涂覆在基板的特定表面上以形成抗蚀剂膜的过程中，通过溶解除去沉积在除了基板的特定表面之外的部分上的抗蚀剂成分剥离液中的抗蚀剂组分。加热的剥离液用于上述剥离液。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2010164779A Method of dry etching 有权
标题翻译：干蚀刻方法
公开(公告)号：JP2010164779A
公开(公告)日：2010-07-29
申请号：JP2009006929
申请日：2009-01-15
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： IGARASHI SHINICHI , KANEKO HIDEO , INAZUKI SADAOMI , NISHIKAWA KAZUHIRO
IPC分类号： G03F1/32 , G03F1/68 , G03F1/80 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To enable high-accuracy etching on a light-shielding film without giving damages to a phase shift film, even when no etching stopper film is used or even when a laminate of the same type of silicon-based materials is used, for example, the laminate of the light-shielding film of a silicon-based material as a phase shift film on the phase shift film of a silicon-based material is used. SOLUTION: A laminate is prepared, comprising: a single or multilayer first silicon-based material layer containing oxygen and/or nitrogen and optionally containing a transition metal; and a single or multilayer second silicon-based material layer formed adjacent to the first silicon-based material layer, optionally containing a transition metal and having a smaller total content of nitrogen and oxygen than that of the first silicon-based material layer. The second silicon-based material layer is selectively etched away by chlorine-based dry etching by setting a ratio of chlorine gas to oxygen gas so as to control the etching rate of the second silicon-based material layer to be larger than the etching rate of the first silicon-based material layer. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题为了能够对遮光膜进行高精度蚀刻而不会对相移膜造成损害，即使不使用蚀刻阻挡膜也可以使用相同类型的硅基使用材料，例如，硅基材料的相移膜上的硅基材料的遮光膜作为相移膜的叠层体被使用。解决方案：制备层压体，其包括：含有氧和/或氮并且任选地含有过渡金属的单层或多层第一硅基材料层; 以及与第一硅基材料层相邻形成的单个或多层第二硅基材料层，任选地含有过渡金属并且具有比第一硅基材料层的总含量更低的氮和氧的总含量。通过设定氯气与氧气的比例，通过氯基干蚀刻选择性地蚀刻第二硅基材料层，以便控制第二硅基材料层的蚀刻速率大于蚀刻速率第一硅基材料层。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2010164777A Method for manufacturing photomask, and photomask blank 有权
标题翻译：制造光电子的方法和光电子空白
公开(公告)号：JP2010164777A
公开(公告)日：2010-07-29
申请号：JP2009006907
申请日：2009-01-15
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： IGARASHI SHINICHI , KANEKO HIDEO , INAZUKI SADAOMI , NISHIKAWA KAZUHIRO
IPC分类号： G03F1/32 , G03F1/54 , G03F1/68 , G03F1/80 , H01L21/027 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To enable high-accuracy etching of a light-shielding film without giving damages to a phase shift film even when no etching stopper film is used or even when a layered structure is used, the layered structure comprising a light-shielding film of a silicon-based material which is the same type of the material for the phase shift film, on the phase shift film of a silicon-based material. SOLUTION: A method for manufacturing a photomask includes a following step carried out on a photomask blank. The photomask blank has a phase shift film formed on a transparent substrate and has a light-shielding film further formed on the phase shift film, wherein: each of the phase shift film and the light-shielding film has a silicon-based material layer; the silicon-based material layer of the phase shift film is adjacent to the silicon-based material layer of the light-shielding film; and the total content of nitrogen and oxygen in the silicon-based material layer of the phase shift film is different from the total content of nitrogen and oxygen in the silicon-based material layer of the light-shielding film. The method includes a step of selectively etching away the silicon-based material layer of the light-shielding film by chlorine-based dry etching with a predetermined ratio of chlorine gas to oxygen gas set. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使在没有使用蚀刻阻挡膜的情况下或即使使用层状结构的情况下，为了能够对遮光膜进行高精度蚀刻而不会对相移膜造成损害，层叠结构包括硅基材料的相移膜上的相同类型的用于相移膜的硅基材料的遮光膜。光掩模的制造方法包括在光掩模坯料上进行的以下步骤。光掩模坯料具有形成在透明基板上并具有进一步形成在相移膜上的遮光膜的相移膜，其中：每个相移膜和遮光膜具有硅基材料层; 相移膜的硅基材料层与遮光膜的硅基材料层相邻; 并且相移膜的硅类材料层中的氮和氧的总含量与遮光膜的硅类材料层中的氮和氧的总含量不同。该方法包括以氯气与氧气组合的预定比例通过氯基干法蚀刻来选择性地蚀刻除去遮光膜的硅基材料层的步骤。版权所有（C）2010，JPO＆INPIT

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