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1. 发明专利

JPS59165468A Manufacture of window frame material for solar battery 失效
标题翻译：用于太阳能电池的窗框材料的制造
公开(公告)号：JPS59165468A
公开(公告)日：1984-09-18
申请号：JP3947183
申请日：1983-03-10
申请人： Shin Etsu Chem Co Ltd
发明人： TAKAMIZAWA MINORU , KOBAYASHI YASUSHI , HAYASHIDA AKIRA , SHIMIZU TAKAAKI
IPC分类号： H01L31/04 , H01L31/20
CPC分类号： H01L31/204 , Y02E10/50 , Y02P70/521
摘要： PURPOSE:To obtain a high quality amorphous SiXC1-X film by using an amorphous carbided silicon represented by a formula SiXC1-X obtained by a plasma CVD method of organic silicon compound having identicalSiH bond in a molecule for at least one of a P type layer and an N type layer of an amorphous silicon photoelectric element. CONSTITUTION:A transparent electrode 2 such as SnO2 is bonded onto a substrate substance (glass plate or the like) 1, an amorphous carbided silicon layer 5 represented by a formula SiXC1-X of P type or N type is deposited by a plasma vapor phase depositing method in the necessary thickness on an organic silicon compound having at least one identicalSiH bond in a molecule and the prescribed doping material, an amorphous silicon layer 4 and further an amorphous silicon layer 5 having a doping material as N type or P type layer or an amorphous SiXC1-X layer are further provided by a plasma vapor phase depositing method thereon, and aluminum electrodes 6 are eventually ohmically contacted to manufacture a photoelectric element. The value of (x) in the above formula is 0.2-0.8, and preferably 0.3-0.7.
摘要翻译：目的：通过使用由分子中具有相同SiH键的有机硅化合物通过等离子体CVD法获得的由式SiXC1-X表示的非晶碳化硅，以获得高质量的非晶SiXC1-X膜，用于P型层和非晶硅光电元件的N型层。构成：将诸如SnO 2的透明电极2结合到基板物质（玻璃板等）1上，通过等离子体气相沉积由P型或N型的式SiXC1-X表示的非晶碳化硅层5 在分子中具有至少一个相同的SiH键的有机硅化合物和规定的掺杂材料，非晶硅层4和另外具有掺杂材料的非晶硅层5作为N型或P型层或者通过其上的等离子体气相沉积方法进一步提供非晶SiXC1-X层，并且铝电极6最终被欧姆接触以制造光电元件。上述式中（x）的值为0.2〜0.8，优选为0.3〜0.7。

2. 发明专利

JP2009062212A Method for producing trichlorosilane and method for producing polycrystalline silicon 有权
标题翻译：生产三氯硅烷的方法和生产多晶硅的方法
公开(公告)号：JP2009062212A
公开(公告)日：2009-03-26
申请号：JP2007229859
申请日：2007-09-05
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： SHIMIZU TAKAAKI , OGURO AKIJI
IPC分类号： C01B33/107
CPC分类号： C01B33/03 , C01B33/035 , C01B33/1071
摘要： PROBLEM TO BE SOLVED: To obtain high-purity TCS, in particular, to obtain high-purity TCS from a by-product produced in a deposition reaction of polycrystalline silicon.
SOLUTION: The present invention includes a step of separating a distillate produced in a hydrogenation step of making tetrachlorosilane (STC) react with hydrogen to be converted into trichlorosilane (TCS), into a chlorosilane fraction containing a hydrocarbon and a TCS fraction, and a chlorination step of making the chlorosilane fraction containing the hydrocarbon react with chlorine to form STC and a substance containing a chlorinated hydrocarbon, wherein the distillate containing STC produced in the chlorination step is circulated to the hydrogenation step. In the chlorination step, the chlorosilane fraction containing a hydrocarbon (capable of containing hyper-hydrogenated chlorosilanes) having a boiling point close to TCS is hyper-chlorinated to acquire a higher boiling point, which facilitates the hyper-chlorinated chlorosilanes and the hyper-chlorinated hydrocarbons to be separated into high concentration, and increase the purity of TCS to be finally obtained.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了获得高纯度TCS，特别是从在多晶硅的沉积反应中产生的副产物获得高纯度TCS。解决方案：本发明包括将制备四氯硅烷（STC）的氢化步骤中产生的要转化为三氯硅烷（TCS）的氢气中产生的馏出物分离成含有烃和TCS馏分的氯硅烷部分的步骤，并且使含有烃的氯硅烷部分与氯反应形成STC的氯化步骤和含有氯化烃的物质，其中在氯化步骤中生产的含有STC的馏出物循环到氢化步骤。在氯化步骤中，具有沸点接近TCS的烃（能够含有高氢氯硅烷）的氯代硅烷馏分被高氯化以获得较高的沸点，这有助于高氯代氯硅烷和高氯化将烃分离成高浓度，并提高最终获得的TCS的纯度。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009062211A Method for producing trichlorosilane and method for producing polycrystalline silicon 有权
标题翻译：生产三氯硅烷的方法和生产多晶硅的方法
公开(公告)号：JP2009062211A
公开(公告)日：2009-03-26
申请号：JP2007229858
申请日：2007-09-05
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： SHIMIZU TAKAAKI , OGURO AKIJI
IPC分类号： C01B33/107 , C01B33/02
CPC分类号： C01B33/1071 , C01B33/035 , C01B33/10778
摘要： PROBLEM TO BE SOLVED: To recycle effluent gas generated in a step of hydrogenating STC so that efficiency of a process for producing TCS can be enhanced.
SOLUTION: A hydrogenation reaction vessel 101 makes STC-containing substance react with hydrogen to convert the substance into TCS. A low boiling fraction removal column 102 separates a chlorosilane distillate discharged from the hydrogenation reaction vessel 101 into TCS and a mixture distillate containing hyper-hydrogenated chlorosilane, and circulates the mixture distillate containing hyper-hydrogenated chlorosilane to the hydrogenation reaction vessel 101. The mixture distillate containing the hyper-hydrogenated chlorosilane separated in the low boiling fraction removal column 102 is circulatingly supplied to the hydrogenation reaction vessel 101. Accordingly, effluent gas is circulated and recycled in the process, which results in enhancing efficiency of TCS production.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：回收在STC氢化步骤中产生的废气，从而可以提高生产TCS的方法的效率。解决方案：氢化反应容器101使含STC的物质与氢反应，将物质转化为TCS。低沸点馏分除去塔102将从氢化反应容器101排出的氯硅烷馏出物分离成TCS和含有高氢氯硅烷的混合物馏出物，并将含有高氢化氯硅烷的混合物馏出物循环到氢化反应器101中。混合物蒸馏将含有在低沸点馏分除去塔102中分离的高氢化氯硅烷循环供给到氢化反应器101.因此，废气在该过程中循环和再循环，这提高了TCS生产的效率。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JPS6165889A Separation and purification of trimethoxysilane 失效
标题翻译：三甲氧基硅烷的分离纯化
公开(公告)号：JPS6165889A
公开(公告)日：1986-04-04
申请号：JP18772884
申请日：1984-09-07
申请人： Shin Etsu Chem Co Ltd
发明人： KOBAYASHI YASUSHI , SHIMIZU TAKAAKI
IPC分类号： C07F7/04 , C07F7/20
摘要： PURPOSE: A mixture of methanol and trimethoxysilane is subjected to extractive distillation using a compound with a specific dipole moment as an extractive solvent to inhibit the formation of a methanol azeotropic mixture whereby the title compound is isolated with advantage.
CONSTITUTION: A mixture of methanol and trimethoxysilane and a extraction solvent of a compound with 1.61 debye dipole moment such as xylene are charged in a distillation kettle 1 together with 0.1W5wt% of ethylene glycol diglycidyl ether and they are heated. When the formation of steam starts, the extraction solvent is introduced from the inlet 2 near the column top to effect extractive distillation to isolate trimethoxysilane.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：使用具有特定偶极矩的化合物作为萃取溶剂对甲醇和三甲氧基硅烷的混合物进行萃取蒸馏，以抑制甲醇共沸混合物的形成，从而有利地分离出标题化合物。构成：将甲醇和三甲氧基硅烷的混合物和具有1.61德拜偶极矩的化合物的提取溶剂如二甲苯装入蒸馏釜1中，与0.1-5重量％的乙二醇二缩水甘油醚一起加热。当蒸汽形成开始时，萃取溶剂从塔顶附近的入口2引入进行萃取蒸馏以分离三甲氧基硅烷。

5. 发明专利

JP2009062210A Method for producing trichlorosilane 有权
标题翻译：生产三氯硅烷的方法
公开(公告)号：JP2009062210A
公开(公告)日：2009-03-26
申请号：JP2007229857
申请日：2007-09-05
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： SHIMIZU TAKAAKI , OGURO AKIJI
IPC分类号： C01B33/107
CPC分类号： C01B33/1071 , C23C16/24 , C23C16/4412 , C23C16/45593
摘要： PROBLEM TO BE SOLVED: To obtain high-purity TCS from a by-product produced in a deposition reaction of polycrystalline silicon.
SOLUTION: A by-product mixture produced in a process 101 for producing polycrystalline silicon is made to react with chlorine in a chlorination reaction vessel 102 to form tetrachlorosilane (STC) distillate, and the STC distillate is made to react with hydrogen in a hydrogenation reaction vessel 103 to be converted into trichlorosilane (TCS). In the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and inhibits carbon from contaminating the polycrystalline silicon. A donor/acceptor eliminator 104 is provided in the circulation cycle for producing TCS, and accordingly there is no need to take out a by-product produced in the process for producing TCS to the outside of the system, which can highly purify the TCS.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：从多晶硅的沉积反应中产生的副产物获得高纯度TCS。解决方案：在用于制造多晶硅的工艺101中制备的副产物混合物在氯化反应容器102中与氯反应形成四氯硅烷（STC）馏出物，使STC馏出物与氢反应将其转化为三氯硅烷（TCS）的氢化反应容器103。在氯化步骤中，沸点接近TCS的甲基氯硅烷被高氯化转化为沸点高的高氯甲基氯硅烷，有利于将高氯甲基氯硅烷分离成高浓度，并抑制碳污染多晶硅。在用于生产TCS的循环循环中提供了供体/受体消除器104，因此不需要在系统外部产生TCS生产过程中产生的副产物，这可以高度净化TCS。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2009062209A Method for producing polycrystalline silicon 有权
标题翻译：生产多晶硅的方法
公开(公告)号：JP2009062209A
公开(公告)日：2009-03-26
申请号：JP2007229856
申请日：2007-09-05
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： SHIMIZU TAKAAKI , OGURO AKIJI , AOYAMA TAKESHI
IPC分类号： C01B33/03 , C01B33/04 , C01B33/107
CPC分类号： C23C16/24 , C01B33/03 , C01B33/1071 , C01B33/10721 , C23C16/4412 , C23C16/45593
摘要： PROBLEM TO BE SOLVED: To facilitate further enhancement of a yield of a process for producing polycrystalline silicon and removal of impurities from TCS and by by-products recycled in the process.
SOLUTION: A by-product mixture produced when polycrystalline silicon is deposited in a CVD reactor 101 is made to react with chlorine in a chlorination reaction vessel 102 to form tetrachlorosilane (STC) distillate, and the STC distillate is made to react with hydrogen in a hydrogenation reaction vessel 103 to be converted into trichlorosilane (TCS). In the chlorination step, polysilane contained in the above described by-product mixture can be efficiently recycled as a raw material for producing the polycrystalline silicon, which can enhance a yield of the production process. In addition, in the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and reduces carbon contamination of the polycrystalline silicon.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：为了便于进一步提高生产多晶硅的方法的产率和从TCS中除去杂质以及在该方法中再循环的副产物。解决方案：在CVD反应器101中沉积多晶硅时产生的副产物混合物与氯反应容器102中的氯反应形成四氯硅烷（STC）馏出物，使STC馏出物与氢气在氢化反应容器103中转化为三氯硅烷（TCS）。在氯化步骤中，上述副产物混合物中所含的聚硅烷可以作为制造多晶硅的原料被有效地再循环，这可提高生产过程的产率。此外，在氯化工序中，沸点接近TCS的甲基氯硅烷被高氯化转化为沸点较高的高氯甲基氯硅烷，有利于将高氯甲基氯代硅烷分离成高浓度，减少多晶硅的碳污染。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2007284539A Nonhalogen flame-retardant resin composition for electron beam irradiation 有权
标题翻译：用于电子束辐照的非卤化物阻燃树脂组合物
公开(公告)号：JP2007284539A
公开(公告)日：2007-11-01
申请号：JP2006112426
申请日：2006-04-14
申请人： Nagano Sanyo Kasei:Kk , Shin Etsu Chem Co Ltd , 信越化学工業株式会社 , 株式会社長野三洋化成
发明人： IHARA TOSHIAKI , TANAKA MASAKI , MIYAZAWA HIROTAKA , HOSHINO SUSUMU , SHIMIZU TAKAAKI
IPC分类号： C08L101/00 , C08K3/00 , C08L83/07
摘要： PROBLEM TO BE SOLVED: To obtain a nonhalogen flame-retardant resin composition having excellent processability and productivity besides exhibition of high flame retardance.
SOLUTION: The nonhalogen flame-retardant resin composition for electron beam irradiation comprises (A) 100 parts wt. of a thermoplastic resin, (B) 40-300 parts wt. of an inorganic flame retardant, (C) 0.1-50 parts wt. of high-polymerization-degree organopolysiloxane represented by formula 1 (R
1 s are each the same or different kind of a substituent group selected from a 1-6C monofunctional hydrocarbon group and a hydroxy group; n is an integer of 2,000-30,000) and (D) 0.01-10 parts wt. of an unsaturated functional group-containing organopolysiloxane.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：待解决的问题：为了获得具有优异的加工性和生产率的非卤素阻燃树脂组合物，除了显示高阻燃性。解决方案：用于电子束照射的非卤素阻燃树脂组合物包含（A）100重量份。的热塑性树脂，（B）40-300重量份的无机阻燃剂，（C）0.1-50重量份。由式1表示的高聚合度有机聚硅氧烷（R 1 SP 1）各自是相同或不同种类的选自1-6C单官能烃基和羟基的取代基; n是整数为2,000-30,000）和（D）0.01-10重量份。的不饱和官能团的有机聚硅氧烷。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JPS5734012A Purifying method of chlorosilane 失效
标题翻译：氯仿的净化方法
公开(公告)号：JPS5734012A
公开(公告)日：1982-02-24
申请号：JP10398580
申请日：1980-07-29
申请人： Shin Etsu Chem Co Ltd
发明人： KOBAYASHI YASUSHI , SHIMIZU TAKAAKI , TAKEDA YOSHIFUMI
IPC分类号： C01B33/107
摘要： PURPOSE: To separate and remove phosphorus compounds contained in chlorosilane effectively, by adding a specific cyclic organic compound or a polymer containing phenol and aluminum chloride to the chlorosilane, and distilling the resultant mixture.
CONSTITUTION: An organic compound expressed by formula I or II (X is hydroxy, alkoxy, nitro or saturated aliphatic acyloxy; Y is H, alkyl or aldehyde group), e.g. phenol or hydroxycyclohexane, or a polymer containing phenol, e.g. the compound expressed by formula III (n is 1W5) and aluminum chloride are added to crude chlorosilane, and the resultant mixture is then distilled to remove phosphorus compounds, particularly phosphorus oxychloride, contained therein and afford purified chlorosilane suitable for preparing the semiconductor silicon.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：通过向氯硅烷中加入特定的环状有机化合物或含有苯酚和氯化铝的聚合物，并将所得混合物蒸馏，以有效地分离和除去氯硅烷中含有的磷化合物。构成：由式I或II表示的有机化合物（X为羟基，烷氧基，硝基或饱和脂肪族酰氧基; Y为H，烷基或醛基）苯酚或羟基环己烷，或含酚的聚合物，例如将式III（n为1-5）表示的化合物和氯化铝加入到粗氯硅烷中，然后蒸馏所得混合物以除去其中所含的磷化合物，特别是磷酰氯，并提供适于制备半导体硅的纯化氯硅烷。

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