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1. 发明专利

JP2009062209A Method for producing polycrystalline silicon 有权
标题翻译：生产多晶硅的方法
公开(公告)号：JP2009062209A
公开(公告)日：2009-03-26
申请号：JP2007229856
申请日：2007-09-05
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： SHIMIZU TAKAAKI , OGURO AKIJI , AOYAMA TAKESHI
IPC分类号： C01B33/03 , C01B33/04 , C01B33/107
CPC分类号： C23C16/24 , C01B33/03 , C01B33/1071 , C01B33/10721 , C23C16/4412 , C23C16/45593
摘要： PROBLEM TO BE SOLVED: To facilitate further enhancement of a yield of a process for producing polycrystalline silicon and removal of impurities from TCS and by by-products recycled in the process.
SOLUTION: A by-product mixture produced when polycrystalline silicon is deposited in a CVD reactor 101 is made to react with chlorine in a chlorination reaction vessel 102 to form tetrachlorosilane (STC) distillate, and the STC distillate is made to react with hydrogen in a hydrogenation reaction vessel 103 to be converted into trichlorosilane (TCS). In the chlorination step, polysilane contained in the above described by-product mixture can be efficiently recycled as a raw material for producing the polycrystalline silicon, which can enhance a yield of the production process. In addition, in the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and reduces carbon contamination of the polycrystalline silicon.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：为了便于进一步提高生产多晶硅的方法的产率和从TCS中除去杂质以及在该方法中再循环的副产物。解决方案：在CVD反应器101中沉积多晶硅时产生的副产物混合物与氯反应容器102中的氯反应形成四氯硅烷（STC）馏出物，使STC馏出物与氢气在氢化反应容器103中转化为三氯硅烷（TCS）。在氯化步骤中，上述副产物混合物中所含的聚硅烷可以作为制造多晶硅的原料被有效地再循环，这可提高生产过程的产率。此外，在氯化工序中，沸点接近TCS的甲基氯硅烷被高氯化转化为沸点较高的高氯甲基氯硅烷，有利于将高氯甲基氯代硅烷分离成高浓度，减少多晶硅的碳污染。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2013001632A Method for purifying chlorosilanes 有权
标题翻译：纯化氯霉素的方法
公开(公告)号：JP2013001632A
公开(公告)日：2013-01-07
申请号：JP2011137664
申请日：2011-06-21
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： HASEGAWA MASAYUKI , AOYAMA TAKESHI
IPC分类号： C01B33/107
摘要： PROBLEM TO BE SOLVED: To efficiently remove impurities from chlorosilane distillates to highly purify the chlorosilanes.SOLUTION: Crude chlorosilanes, which contain trichlorosilane, are obtained in a hydrogenation process 101 and in a chlorination process 102. In an impurity conversion process 103, an organic compound is added as the distillation aids, and phosphorus impurities and boron impurities are converted to substances having a high boiling point. Chlorosilane distillates, which are sent to a purification process 104, contain not only chlorosilanes but also the substances having a high boiling point which are produced by the excessive part of the organic compound and the conversion of the impurities. The chlorosilane distillates, which are sent to the purification process 104, are introduced into an evaporator 104a to vaporize the trichlorosilanes. The vapor of the chlorosilanes is fed to a distillation tower 104b. The impurities converted to the substance having a high boiling point remain as a tank bottom. The vapor produced in the evaporator 104a is fed to the distillation tower 104b, and the chlorosilanes, which contain the trichlorosilanes as the main component, are separated and purified.
摘要翻译：要解决的问题：有效地从氯硅烷馏出物中除去杂质以高度纯化氯硅烷。解决方案：在加氢过程101和氯化过程102中获得含有三氯硅烷的粗氯硅烷。在杂质转化过程103中，加入有机化合物作为蒸馏助剂，磷杂质和硼杂质为转化为具有高沸点的物质。送到纯化方法104的氯硅烷馏出物不仅含有氯硅烷，还包含由过量的有机化合物产生的具有高沸点的物质和杂质的转化。送到纯化过程104的氯硅烷馏出物被引入蒸发器104a以蒸发三氯硅烷。氯硅烷的蒸气被送入蒸馏塔104b。转化成具有高沸点物质的杂质保持为罐底。将蒸发器104a中产生的蒸汽送入蒸馏塔104b，分离并纯化含有三氯硅烷作为主要成分的氯硅烷。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012091960A Method for purifying chlorosilanes 有权
标题翻译：纯化氯霉素的方法
公开(公告)号：JP2012091960A
公开(公告)日：2012-05-17
申请号：JP2010240285
申请日：2010-10-27
申请人： Shin-Etsu Chemical Co Ltd , 信越化学工業株式会社
发明人： HASEGAWA MASAYUKI , TONOMURA YOICHI , KUBOTA TORU , AOYAMA TAKESHI , TANAKA HIDEJI
IPC分类号： C01B33/107
CPC分类号： C01B33/10794 , C01B33/1071 , C01B33/10763 , C01B33/10778
摘要： PROBLEM TO BE SOLVED: To provide a technique of removing donor impurities and acceptor impurities in the distillate of chlorosilanes so as to reduce their contained amount.SOLUTION: This method for purifying chlorosilanes includes at least three steps among a hydrogenation step 101 and/or a chlorination step 102, an impurity conversion step 103 and a purification step 104. In the impurity conversion step 103, an aldehyde compound represented by general formula: Ar-R-CHO (Ar is a substituted or unsubstituted aryl group; and R is a ≥2C organic group) is added, and donor impurities and acceptor impurities contained in a chlorosilane distillate is converted into high boilers. The chlorosilane distillate after the donor impurities and the acceptor impurities have been converted into high boilers is sent to the purification step 104. In the purification step 104, by using distillation columns or the like, high purity chlorosilanes are recovered outside of the system and obtained, from which donor impurities and acceptor impurities have been thoroughly removed.
摘要翻译：要解决的问题：提供一种去除氯硅烷馏出物中的供体杂质和受体杂质以减少其含量的技术。解决方案：用于纯化氯代硅烷的方法包括氢化步骤101和/或氯化步骤102，杂质转化步骤103和纯化步骤104中的至少三个步骤。在杂质转化步骤103中，通式为：Ar-R-CHO（Ar为取代或未取代的芳基，R为≥2C有机基团），氯代硅烷馏出物中所含的供体杂质和受主杂质转化为高沸点物。将供体杂质和受体杂质转化为高沸点物后的氯硅烷馏出物送入纯化工序104.在纯化工序104中，通过使用蒸馏塔等，将高纯度氯硅烷回收到体系外，得到供体杂质和受体杂质被彻底除去。版权所有（C）2012，JPO＆INPIT

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