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1. 发明专利

JPS6197357A Silicon carbide precursor composition 失效
标题翻译：碳化硅前体组合物
公开(公告)号：JPS6197357A
公开(公告)日：1986-05-15
申请号：JP21814084
申请日：1984-10-17
申请人： Shin Etsu Chem Co Ltd
发明人： TAKAMIZAWA MINORU , KOBAYASHI YASUSHI , ISHIHARA TOSHINOBU , TAKEDA YOSHIFUMI , HAYASHIDA AKIRA
IPC分类号： C08L83/00 , C04B35/571 , C08G79/00 , C08L83/02 , C08L83/16 , D01F9/10
CPC分类号： C08G79/00 , C04B35/571 , C08L83/16 , C08L83/00
摘要： PURPOSE: To provide the title compsn. which has improved spinnability and is freed from the problem of brittleness, consisting of a polycarbosilane polymer (organometallic copolymer) and an organosilicon high-molecular compd.
CONSTITUTION: An organosilicon compd. having a polysilane skeleton of formula I (wherein R
5 is methylene, phenylene; R
6 , R
7 are each a 1W6C monovalent hydrocarbon group; x, y, z are each a positive number; x≥y) or a mixture thereof with an organometallic compd. (e.g. tetrabutoxytitanium) is subjected to a heat-decomposing polycondensation reaction to obtain a polycarbosilane polymer or its organometallic copolymer (A). 80W99.9wt% component A is blended with 20W0.1wt% linear organosilicon high-molecular compd. having a weight-average MW of 10,000W1,000,000 and formula II (wherein R
1 , R
2 are each a monovalent hydrocarbon group; R
3 is OH, amino, trialkylsiloxy, monova lent hydrocarbon group; m≥100).
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：提供标题compsn。其具有改善的可纺性，并且不含由聚碳硅烷聚合物（有机金属共聚物）和有机硅高分子化合物组成的脆性问题。构成：有机硅化合物具有式I的聚硅烷骨架（其中R 5是亚甲基，亚苯基; R 6，R 7各自是1-6C单价烃基; x，y，z各自为正数; x> = y）或其与有机金属化合物的混合物。（例如四丁氧基钛）进行热分解缩聚反应，得到聚碳硅烷聚合物或其有机金属共聚物（A）。 80-99.9wt％组分A与20-0.1wt％线性有机硅高分子化合物混合。重均分子量为10,000-1,000,000和式II（其中R 1，R 2各自为一价烃基; R 3为OH，氨基，三烷基甲硅烷氧基，单未取代的烃基; m = 100）。

2. 发明专利

JPS6148409A Fine powder comprising silicon, carbon, and nitrogen, and process for preparing such powder 失效
标题翻译：包含硅，碳和氮的微粉，以及制备这种粉末的方法
公开(公告)号：JPS6148409A
公开(公告)日：1986-03-10
申请号：JP17079084
申请日：1984-08-16
申请人： Shin Etsu Chem Co Ltd
发明人： TAKAMIZAWA MINORU , KOBAYASHI YASUSHI , HAYASHIDA AKIRA , OSAKI HIROMI
IPC分类号： C01B21/082 , C01B21/068
CPC分类号： C01B21/068 , C01P2002/02 , C01P2004/62
摘要： PURPOSE: To prepare the titled fine powder useful as a raw material for a ceramic moulded product by the thermal decomposition of a specified organosilicon compd. in the gaseous phase.
CONSTITUTION: An organosilicon compd. having ≥one Si-N bond in at least one molecular structure selected from molecules as expressed by the formulas ( I ), (II) [wherein R
1 is H; (un)substituted univalent hydrocarbon group; X is halogen, amino, -NC, -NCO, or -NCS; R
2 and R
3 are R
1 , R
3
1 Si-; 1≤a≤3; 0≤b≤2; 1≤ c≤3; a+b+c=4], and the formula (III) [wherein (a+b=3)], and the formula (IV) (wherein 1≤c≤2; 0≤d≤1; c+d=2; 2≤n≤4), is charged in a vessel 1. The organosilicon compd. is suspended in a carrier gas blown from an inlet 2. The gas is introduced into a core tube installed in a vertical electric furnace 4, and decomposed thermally in the gaseous phase at ≥1,000°C. Fine powder comprising Si, C, and N and being expressed by the formula: SiCxNy (wherein 0.1≤x≤1.5; 0.1≤ y≤1.2) is produced and recovered in a receiver 6.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过特定的有机硅化合物的热分解制备用作陶瓷成型体的原料的标题细粉。在气相中。构成：有机硅化合物在选自由式（I），（II）表示的分子中的至少一种分子结构中具有> = 1个Si-N键[其中R 1是H; （un）取代的一价烃基; X是卤素，氨基，-NC，-NCO或-NCS; R 2和R 3是R 1，R 3 1 Si-; 1 <= a <= 3; 0 <= b <= 2; 1 <= c <= 3; a + b + c = 4]和式（III）[其中（a + b = 3）]和式（IV）（其中1≤c≤2;0≤d≤1; c + d = 2; 2 <= n <= 4），装入容器1中。悬浮在从入口2吹入的载气中。将气体引入安装在立式电炉4中的芯管中，并在气相中> 1000℃热分解。包含Si，C和N的细粉末由下式表示：SiC x N y（其中0.1 <= x <= 1.5; 0.1 <= y <= 1.2）在接收器6中产生并回收。

3. 发明专利

JPS59154455A Electrophotographic sensitive body and its manufacture 失效
标题翻译：电子感应敏感体及其制造
公开(公告)号：JPS59154455A
公开(公告)日：1984-09-03
申请号：JP2796583
申请日：1983-02-22
申请人： Shin Etsu Chem Co Ltd
发明人： TAKAMIZAWA MINORU , KOBAYASHI YASUSHI , HAYASHIDA AKIRA
IPC分类号： G03G5/08
CPC分类号： G03G5/08
摘要： PURPOSE:To improve resistance to corona ions, solvents, light fatigue, humidity, heat, and abrasion, and cleanability by forming a photoconductive layer having a photosensitive surface layer of a coat composed essentially of amorphous silicon carbide. CONSTITUTION:An amorphous silicon carbide film 3 is formed by the CVD method on a substrate 2 of a metal or its alloy, such as stainless steel, to form a photosensitive body 1. This layer may be further coated with a plastic film, sheet, glass, or ceramic layer treated to make it conductive. Said body 1 is usually formed into a cylinder, belt, plate, or the like, and the photoconductive layer 3 formed on the substrate 2 is made of silicon carbide by the plasma CVD layer preferably contg. 5-40 atomic % H, and the layer 3 can be optionally controlled in conductivity by adding impurity for converting it into an n or p type.
摘要翻译：目的：通过形成具有基本上由非晶碳化硅组成的涂层的光敏表面层的光电导层来改善对电晕离子，溶剂，轻度疲劳，湿度，热和磨损的抵抗性和可清洁性。构成：通过CVD法在金属或其合金（例如不锈钢）的基板2上形成非晶碳化硅膜3，以形成感光体1.该层可以进一步涂覆塑料膜，片材，玻璃或陶瓷层，以使其导电。所述主体1通常形成为圆筒，带，板等，并且形成在基板2上的光电导层3通过等离子体CVD层由碳化硅制成， 5-40原子％H，并且通过添加用于将其转换为n或p型的杂质，可以任选地控制层3的导电性。

4. 发明专利

JPS59165468A Manufacture of window frame material for solar battery 失效
标题翻译：用于太阳能电池的窗框材料的制造
公开(公告)号：JPS59165468A
公开(公告)日：1984-09-18
申请号：JP3947183
申请日：1983-03-10
申请人： Shin Etsu Chem Co Ltd
发明人： TAKAMIZAWA MINORU , KOBAYASHI YASUSHI , HAYASHIDA AKIRA , SHIMIZU TAKAAKI
IPC分类号： H01L31/04 , H01L31/20
CPC分类号： H01L31/204 , Y02E10/50 , Y02P70/521
摘要： PURPOSE:To obtain a high quality amorphous SiXC1-X film by using an amorphous carbided silicon represented by a formula SiXC1-X obtained by a plasma CVD method of organic silicon compound having identicalSiH bond in a molecule for at least one of a P type layer and an N type layer of an amorphous silicon photoelectric element. CONSTITUTION:A transparent electrode 2 such as SnO2 is bonded onto a substrate substance (glass plate or the like) 1, an amorphous carbided silicon layer 5 represented by a formula SiXC1-X of P type or N type is deposited by a plasma vapor phase depositing method in the necessary thickness on an organic silicon compound having at least one identicalSiH bond in a molecule and the prescribed doping material, an amorphous silicon layer 4 and further an amorphous silicon layer 5 having a doping material as N type or P type layer or an amorphous SiXC1-X layer are further provided by a plasma vapor phase depositing method thereon, and aluminum electrodes 6 are eventually ohmically contacted to manufacture a photoelectric element. The value of (x) in the above formula is 0.2-0.8, and preferably 0.3-0.7.
摘要翻译：目的：通过使用由分子中具有相同SiH键的有机硅化合物通过等离子体CVD法获得的由式SiXC1-X表示的非晶碳化硅，以获得高质量的非晶SiXC1-X膜，用于P型层和非晶硅光电元件的N型层。构成：将诸如SnO 2的透明电极2结合到基板物质（玻璃板等）1上，通过等离子体气相沉积由P型或N型的式SiXC1-X表示的非晶碳化硅层5 在分子中具有至少一个相同的SiH键的有机硅化合物和规定的掺杂材料，非晶硅层4和另外具有掺杂材料的非晶硅层5作为N型或P型层或者通过其上的等离子体气相沉积方法进一步提供非晶SiXC1-X层，并且铝电极6最终被欧姆接触以制造光电元件。上述式中（x）的值为0.2〜0.8，优选为0.3〜0.7。

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