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1. 发明专利

JP2008047901A Electromechanical memory device and fabrication method thereof 审中-公开
标题翻译：电子存储器件及其制造方法
公开(公告)号：JP2008047901A
公开(公告)日：2008-02-28
申请号：JP2007206449
申请日：2007-08-08
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： YUN EUN-JUNG , RI SEIEI , KIM MIN-SANG , KIM SUNG-MIN
IPC分类号： H01L27/10 , B81B3/00 , B81C1/00 , G11C11/21
摘要： PROBLEM TO BE SOLVED: To provide a memory device with high reliability and good operation characteristics and a method for fabrication thereof. SOLUTION: A memory device comprises a substrate 100, a first electrode 110 which is extended vertically for the substrate 100, and a second electrode 120 which is extended vertically for the substrate 100 and is separated from the first electrode 110 with an electrode gap. In addition, the memory device comprises a third electrode which is extended vertically to the inside of the electrode gap and is separated from the first electrode 110 with a first gap 118A and from the second electrode 120 with a second gap 118B to allow electrostatic deformation in a way that the first bend state enables electric connection to the first electrode 110 via the first gap 118A, the second bend state enables electric connection to the second electrode 120 via the second gap 118B and the standby state enables electric isolation from the first electrode 110 and second electrode 120. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有高可靠性和良好操作特性的存储器件及其制造方法。解决方案：存储器件包括衬底100，垂直于衬底100延伸的第一电极110和垂直延伸用于衬底100的第二电极120，并与第一电极110与电极分离间隙。此外，存储器件包括第三电极，其垂直于电极间隙的内部延伸并且与第一电极110分离，具有第一间隙118A，并且与第二电极120与第二间隙118B分离，以允许静电变形第一弯曲状态能够经由第一间隙118A与第一电极110电连接的方式，第二弯曲状态使得能够经由第二间隙118B与第二电极120电连接，并且待机状态使得能够从第一电极110电隔离和第二电极120.版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2006295180A Field-effect transistor having perpendicular electrode and manufacturing method thereof 审中-公开
标题翻译：具有普通电极的场效应晶体管及其制造方法
公开(公告)号：JP2006295180A
公开(公告)日：2006-10-26
申请号：JP2006107587
申请日：2006-04-10
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM SUNG-MIN , PARK DONG-GUN , KIN DOUIN , KIM MIN-SANG , YUN EUN-JUNG
IPC分类号： H01L27/088 , H01L21/8234 , H01L21/8242 , H01L21/8244 , H01L21/8247 , H01L27/08 , H01L27/108 , H01L27/11 , H01L27/115 , H01L29/41 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L29/66825 , H01L21/823437 , H01L21/823487 , H01L21/84 , H01L27/105 , H01L27/1052 , H01L27/10876 , H01L27/10879 , H01L27/10894 , H01L27/10897 , H01L27/11 , H01L27/1116 , H01L27/11534 , H01L27/1203 , H01L29/42336 , H01L29/66621 , H01L29/66795 , H01L29/7851 , H01L29/7881
摘要： PROBLEM TO BE SOLVED: To provide a field-effect transistor having a perpendicular electrode and a manufacturing method thereof. SOLUTION: A planar memory device and vertically oriented thin body devices are formed on a common semiconductor layer in a semiconductor device and a manufacturing method of the semiconductor device. For example, it is desirable that a memory device has a planar transistor in a surrounding region around the device and the vertically oriented thin body transistors in the cell region of the device. This allows the merits in each form of the device to be applied to each suitable function of the memory device. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供具有垂直电极的场效应晶体管及其制造方法。解决方案：半导体器件中的公共半导体层上形成平面存储器件和垂直取向的薄体器件，以及半导体器件的制造方法。例如，期望存储器件在器件周围的周围区域中具有平面晶体管，并且在器件的单元区域中具有垂直取向的薄体晶体管。这允许将每种形式的设备的优点应用于存储器件的每个适当的功能。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2008042206A Memory element, and manufacturing method thereof 审中-公开
标题翻译：记忆元件及其制造方法
公开(公告)号：JP2008042206A
公开(公告)日：2008-02-21
申请号：JP2007202739
申请日：2007-08-03
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： YUN EUN-JUNG , RI SEIEI , RO KYOKAN , KIM MIN-SANG , KIM SUNG-MIN
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a memory element having a laminated structure, and to provide a method for manufacturing the memory element.
SOLUTION: The memory element 101 includes a first active region 105 on a substrate 100, and first and second source/drain regions 150, 152 positioned on the substrate adjacent to the first and second sidewalls of the first active region 105. A first gate structure 132 is arranged on the first active region 105 between the first and second source/drain regions 150, 152. There is a second active region 104a positioned on the first gate structure 132 at a part that is between and adjacent to the first and second source/drain 150, 152. A second gate structure 148 is arranged on the second active region 104a positioned on the first gate structure 132.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有层压结构的存储元件，并提供一种用于制造存储元件的方法。存储元件101包括衬底100上的第一有源区105以及与第一有源区105的第一和第二侧壁相邻的位于衬底上的第一和第二源/漏区150,152。第一栅极结构132布置在第一和第二源极/漏极区域150,152之间的第一有源区域105上。在第一栅极结构132和第二栅极结构132之间的第一和第二源极/漏极区域150,152之间的部分处设置有第二有源区域104a。第二栅极/漏极150,152。第二栅极结构148布置在位于第一栅极结构132上的第二有源区域104a上。（C）2008，JPO和INPIT

4. 发明专利

JP2006330737A Display device and portable electronic apparatus mounted with same 审中-公开
标题翻译：显示设备和便携式电子设备安装在一起
公开(公告)号：JP2006330737A
公开(公告)日：2006-12-07
申请号：JP2006146621
申请日：2006-05-26
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： SHIN CHANG-HYEON , LEE DONG-HO , KIM SUNG-MIN , CHU YOUNG-BEE , HAN BYUNG-WOONG , KIM JEUNG-SOO , LEE JONG-NAM
IPC分类号： G09F9/00 , G02F1/1333 , G02F1/1347
CPC分类号： G02F1/1333 , G02F1/133308 , G02F2201/50 , G02F2201/503
摘要： PROBLEM TO BE SOLVED: To provide a display device which is made thin and lightweight while maintaining sufficiently high strength against an external shock.
SOLUTION: The display device according to the present invention is characterized in that a transparent film and a buffer layer cover the screen of a liquid crystal panel to protect the liquid crystal panel against external scratching and corrosion by chemicals.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造得薄且重量轻的显示装置，同时保持足够高的抵抗外部冲击的强度。解决方案：根据本发明的显示装置的特征在于，透明膜和缓冲层覆盖液晶面板的屏幕，以保护液晶面板免受化学品的外部刮擦和腐蚀。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006195466A Liquid crystal display device and portable display apparatus and display element including the same 审中-公开
标题翻译：液晶显示装置和便携式显示装置和显示元件
公开(公告)号：JP2006195466A
公开(公告)日：2006-07-27
申请号：JP2006004371
申请日：2006-01-12
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM SUNG-MIN , HAN BYUNG-WOONG , CHU YOUNG-BEE , KIM JEUNG-SOO , LEE JONG-NAM , KIM KYU-SEOK , LEE SANG-HEE , KIM DONG-CHEOL , PARK YOUNG-HEE
IPC分类号： G02F1/1333 , G02F1/1335 , G09F9/00
CPC分类号： G02F1/133308 , G02F2001/133342 , G02F2201/50 , G02F2201/503 , G02F2202/28
摘要： PROBLEM TO BE SOLVED: To provide a display element which is made thin and lightweight. SOLUTION: The display element comprises a display panel. a transparent film disposed on the display panel and a buffer layer interposed between the transparent film and the display panel. The buffer layer has an adhesive characteristic. Thereby, the transparent film including a high polymer film stuck onto the liquid crystal panel by using the buffer layer having the adhesive characteristic or the high polymer film and a hard coating layer is provided, and the thickness and weight can be made thinner and lighter as compared with the conventional portable display apparatus. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供制造得薄且重量轻的显示元件。解决方案：显示元件包括显示面板。设置在显示面板上的透明膜和介于透明膜和显示面板之间的缓冲层。缓冲层具有粘合特性。由此，提供了通过使用具有粘合特性的缓冲层或高分子膜和硬涂层而粘附在液晶面板上的高分子膜的透明膜，其厚度和重量可以做得更薄更轻与传统的便携式显示装置相比。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006013521A Semiconductor device comprising multichannel fin field-effect transistor and method of manufacturing the same 有权
标题翻译：包含多通道熔融场效应晶体管的半导体器件及其制造方法
公开(公告)号：JP2006013521A
公开(公告)日：2006-01-12
申请号：JP2005188780
申请日：2005-06-28
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM SUNG-MIN , JANG SE-MYEONG , PARK DONG-GUN , GO YOTETSU , YUN EUN-JUNG , KIM KEUNNAM
IPC分类号： H01L27/088 , H01L21/336 , H01L21/8234 , H01L21/84 , H01L27/08 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66545 , H01L21/84 , H01L27/1203 , H01L29/66795 , H01L29/785 , H01L29/78684
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and the method of manufacturing the same. SOLUTION: A semiconductor device comprises a semiconductor substrate which comprises a cell region and a peripheral circuit region and in which the cell region and the peripheral circuit region comprise an active region demarcated by an element isolation film, a portion of the active region which is projected on the surface of the element isolation film and which demarcates at least two active channels, a gate oxide film formed on the active region of the semiconductor substrate having at least two projected active channels, a gate electrode formed on the element isolation film of the gate oxide film and the semiconductor substrate, and a source and a drain formed in the active region of the semiconductor substrate of both sides of each gate electrode. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体器件及其制造方法。解决方案：半导体器件包括半导体衬底，其包括单元区域和外围电路区域，并且其中单元区域和外围电路区域包括由元件隔离膜划分的有源区域，有源区域的一部分其被投影在元件隔离膜的表面上并且划分至少两个有源沟道，形成在具有至少两个投影的有源沟道的半导体衬底的有源区上的栅极氧化膜，形成在元件隔离膜上的栅电极的栅极氧化膜和半导体衬底，以及形成在每个栅电极的两侧的半导体衬底的有源区中的源极和漏极。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2012186471A Electrical energy generator 有权
标题翻译：电力发电机
公开(公告)号：JP2012186471A
公开(公告)日：2012-09-27
申请号：JP2012032795
申请日：2012-02-17
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM SUNG-MIN , SHA SHONAN
IPC分类号： H01L31/04 , H01L41/08 , H01L41/113 , H01L41/187 , H01L41/193 , H01L51/42
CPC分类号： H02N2/186 , Y02E10/549
摘要： PROBLEM TO BE SOLVED: To provide an electrical energy generator.SOLUTION: The electrical energy generator includes a plurality of nanowires made of a semiconductor material having piezoelectric characteristics; a semiconductor layer which is formed at one end of the nanowires and forms a p-n junction with the nanowires; and a contact layer which is in contact with the other end of the nanowires and made of a material having metal-insulator transition (MIT) characteristics.
摘要翻译：要解决的问题：提供一种电能发生器。解决方案：电能发生器包括由具有压电特性的半导体材料制成的多个纳米线; 形成在纳米线的一端并与纳米线形成p-n结的半导体层; 以及与纳米线的另一端接触并由具有金属 - 绝缘体转变（MIT）特性的材料制成的接触层。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2008042209A Transistor, and manufacturing method thereof 有权
标题翻译：晶体管及其制造方法
公开(公告)号：JP2008042209A
公开(公告)日：2008-02-21
申请号：JP2007204374
申请日：2007-08-06
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： YUN EUN-JUNG , RI SEIEI , KIM MIN-SANG , KIM SUNG-MIN , JO HYE-JIN
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a transistor for non-volatile memory devices that has a vertical laminated structure and can achieve high integration effectively, and to provide a method for manufacturing the transistor.
SOLUTION: The transistor 100 used as a vertical twin-channel transistor includes: pairs 115, 116 of first and second vertical overlap source and drain positioned on a substrate 101; first and second vertical channel regions 117 extended between the pairs 115, 116 of first and second vertical overlap source and drain; first and second insulating regions 109, 112 positioned while being adjacent to the first and second vertical channel regions 117 between the first and second vertical overlap source/drain regions 115, 116; first and second gate insulators 110 including a charge trap film formed on the first and second vertical channel regions 117; and a gate electrode 111 formed between the first and second insulators 110.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有垂直层压结构并可以有效实现高集成度的非易失性存储器件的晶体管，并提供一种用于制造晶体管的方法。用作垂直双通道晶体管的晶体管100包括：位于衬底101上的第一和第二垂直重叠源极和漏极的对115,116; 在第一和第二垂直重叠源和漏极的对115,116之间延伸的第一和第二垂直沟道区域117; 第一和第二绝缘区域109,112位于第一和第二垂直重叠源极/漏极区域115,116之间，与第一和第二垂直沟道区域117相邻; 包括形成在第一和第二垂直沟道区域117上的电荷陷阱膜的第一和第二栅极绝缘体110; 以及形成在第一和第二绝缘体110之间的栅极电极111.权利要求：（C）2008，JPO＆INPIT

9. 发明专利

JP2008041637A Backlight unit and liquid crystal display equipped with it 审中-公开
标题翻译：背光单元和配有液晶显示器
公开(公告)号：JP2008041637A
公开(公告)日：2008-02-21
申请号：JP2006354484
申请日：2006-12-28
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM JEUNG-SOO , CHU YOUNG-BEE , LEE IK-SOO , KIM KYU-SEOK , KIM TAE-JOON , OH JEONG-SEOK , KIM SUNG-MIN , PARK YOUNG-HEE
IPC分类号： F21V8/00 , F21S2/00 , F21V7/00 , F21Y101/02 , G02F1/13357
CPC分类号： G02B6/0021 , G02B6/003 , G02B6/0073 , G02B6/0083
摘要： PROBLEM TO BE SOLVED: To suppress loss of light in a liquid crystal display as much as possible using light-emitting diodes with protruded lens parts as a light source. SOLUTION: The device is provided with a light guide plate with a groove of a given shape formed at least at one side, at least one light-emitting diode equipped with a lens part of a protruded shape arranged in correspondence with the groove of the light guide plate, a first reflecting plate arranged at a top part of the light-emitting diode, and a second reflecting plate arranged at a lower part of the light-emitting diode. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2007304562A Method and apparatus for manufacturing protective member for display device, and method of manufacturing display device using same 审中-公开
标题翻译：用于制造用于显示装置的保护构件的方法和装置以及使用其制造显示装置的方法
公开(公告)号：JP2007304562A
公开(公告)日：2007-11-22
申请号：JP2007033227
申请日：2007-02-14
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE BYOUNG-HUN , KANG HO-MIN , PARK HEE-YOUNG , RI SHOSHUN , HWANG JEONG-HO , KIM SUNG-MIN , SAI SEITAKU , KANG HO-JEONG , GEN SHOSHOKU
IPC分类号： G09F9/00 , G02F1/1333 , G02F1/1335
CPC分类号： G02F1/1333 , G02F2201/50 , Y10T29/53539
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing a protective member for display device; and to provide a method for manufacturing a display device using the same. SOLUTION: The method for manufacturing the protective member for the display device includes steps of: arranging a protection panel and protection cushion vertically to the ground; bringing the protection cushion into close contact with the protection panel; and attaching the protection cushion to the protection panel. Thus, the method for manufacturing the protective member for display device can prevent foreign materials from getting between the protection panel and the protection cushion, thereby improving the yield of the product and the display characteristic of the display device. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造显示装置的保护构件的方法和装置; 并提供一种制造使用该显示装置的显示装置的方法。解决方案：用于制造用于显示装置的保护构件的方法包括以下步骤：将保护面板和保护垫垂直布置在地面上; 使保护垫与保护板紧密接触; 并将保护垫连接到保护面板上。因此，用于制造显示装置用保护构件的方法可以防止异物进入保护面板和保护衬垫之间，从而提高产品的产量和显示装置的显示特性。版权所有（C）2008，JPO＆INPIT

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