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    • 3. 发明专利
    • Manufacturing method of vertical step structure
    • 垂直步进结构的制造方法
    • JP2005335059A
    • 2005-12-08
    • JP2005149939
    • 2005-05-23
    • Samsung Electronics Co Ltd三星電子株式会社Samsung Electronics Co.,Ltd.
    • KIM JONG-PALLEE BYEUNG-LEULLEE SANG-WOO
    • B81B3/00B81C1/00G01P15/08G01P15/125G02B26/08H01L21/00
    • B81C1/00626B81B2201/0235B81B2201/0242B81B2201/045B81B2203/0109B81B2203/0118B81C2201/014G01P15/0802G01P15/125G02B26/0841
    • PROBLEM TO BE SOLVED: To disclose a manufacturing method of a vertical step structure forming a complete vertical step in a wafer.
      SOLUTION: A manufacturing method of a vertical step structure comprises: the first trench forming step for injecting a predetermined substance after forming the first trench by etching a wafer; the first etching step for forming a second trench by etching the wafer after performing a first patterning to the wafer to deposit a first thin film and performing a second patterning to the first thin film and the wafer to deposit a second thin film; the second etching step for vertically extending the second trench by etching the wafer after forming a protection film on the side face of the second trench; the third etching step for forming a third trench by etching a position from which the second thin film is removed after removing the second thin film; and the fourth etching step for horizontally extending the second trench thus vertically extended in the second etching step by etching the wafer and the third trench.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:公开在晶片中形成完整的垂直台阶的垂直台阶结构的制造方法。 解决方案:垂直台阶结构的制造方法包括:第一沟槽形成步骤,用于通过蚀刻晶片在形成第一沟槽之后注入预定物质; 第一蚀刻步骤,用于在对晶片进行第一图案化之后通过蚀刻晶片以沉积第一薄膜并对第一薄膜和晶片进行第二图案化以沉积第二薄膜来形成第二沟槽; 所述第二蚀刻步骤用于在所述第二沟槽的侧面上形成保护膜之后通过蚀刻所述晶片来垂直延伸所述第二沟槽; 第三蚀刻步骤,用于通过蚀刻除去第二薄膜之后除去第二薄膜的位置形成第三沟槽; 以及第四蚀刻步骤,用于通过蚀刻晶片和第三沟槽在第二蚀刻步骤中水平延伸第二沟槽,从而垂直延伸。 版权所有(C)2006,JPO&NCIPI
    • 4. 发明专利
    • Perpendicular level difference structure and its manufacturing method
    • PERPENDICULAR LEVEL DIFFERENCE STRUCTURE及其制造方法
    • JP2006026895A
    • 2006-02-02
    • JP2005209252
    • 2005-07-19
    • Samsung Electronics Co Ltd三星電子株式会社Samsung Electronics Co.,Ltd.
    • LEE SANG-WOOKIM JONG-PALLEE BYEUNG-LEULCHOI JOON-HYOCK
    • B81B3/00B81C1/00H01L29/06H02K27/18H02N13/00
    • B81C1/00182B81B2201/0235B81C2203/0118G01P15/0802G01P15/125
    • PROBLEM TO BE SOLVED: To simply manufacture a perpendicular level difference structure having high perpendicular level difference. SOLUTION: The perpendicular level difference structure is provided with a substrate; a fixing electrode fixing part formed on the substrate; a fixing electrode movement part spaced from an upper part of the substrate by a predetermined distance and formed; a spring part for connecting the fixing electrode fixing part and the fixing electrode movement part and formed such that the fixing electrode movement part can be moved in a surface direction and a vertical direction of the substrate; a mobile electrode spaced from the upper part of the substrate by a predetermined distance and formed so as to have a predetermined clearance with the fixing electrode movement part in a horizontal direction; and a cover part bonded to a predetermined area of the fixing electrode movement part or the mobile electrode formed such that the fixing electrode movement part and the mobile electrode have the perpendicular level difference such that the fixing electrode movement part or the mobile electrode is moved in the surface direction and the vertical direction of the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:简单地制造具有高垂直水平差的垂直水平差分结构。 解决方案:垂直水平差结构设置有基板; 形成在所述基板上的固定电极固定部; 固定电极移动部件,其与所述基板的上部隔开预定距离并形成; 用于连接固定电极固定部分和固定电极移动部分并形成为使得固定电极移动部分能够在基板的表面方向和垂直方向上移动的弹簧部分; 所述移动电极与所述基板的上部间隔预定距离并且形成为与所述固定电极移动部分在水平方向上具有预定的间隙; 以及覆盖部分,其结合到固定电极移动部分或移动电极的预定区域,所述预定区域形成为使得固定电极移动部分和移动电极具有垂直的电平差,使得固定电极移动部分或移动电极移动 基板的表面方向和垂直方向。 版权所有(C)2006,JPO&NCIPI
    • 8. 发明专利
    • Driving mems structure using single electrode, and drive detecting device and method
    • 使用单电极驱动MEMS结构和驱动检测器件及方法
    • JP2005177985A
    • 2005-07-07
    • JP2004369203
    • 2004-12-21
    • Samsung Electronics Co Ltd三星電子株式会社Samsung Electronics Co.,Ltd.
    • KIM JONG-PALLEE BYEUNG-LEULLEE SANG-WOO
    • B81B7/02G01C19/56
    • G01C19/5776
    • PROBLEM TO BE SOLVED: To provide a MEMS structure driving device and a driving method, capable of carrying out the motion of the MEMS (Micro Electro Mechanical System) structure by one electrode.
      SOLUTION: The MEMS structure driving device comprises a driving signal generating portion 20 generating and outputting a driving signal of the MEMS structure; a motion detecting portion 21 detecting the motion of the MEMS structure, and outputting a motion current signal corresponding to the motion; an amplifying portion 22 amplifying the motion current signal outputted from the motion detecting portion, and outputting that as a motion voltage signal; a gain adjusting portion 24 amplifying the driving signal from the driving signal generating portion, and outputting that as the driving signal; a differential circuit portion 25 adding/subtracting the signals inputted from the amplifying portion and the gain adjusting portion, and wherein the driving signal outputs a canceled motion signal; and a motion signal detecting portion 26 selecting and outputting the motion signal of predetermined frequency of the motion signals inputted from the differential circuit portion.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种能够通过一个电极执行MEMS(微机电系统)结构的运动的MEMS结构驱动装置和驱动方法。 解决方案:MEMS结构驱动装置包括产生并输出MEMS结构的驱动信号的驱动信号产生部分20; 运动检测部分21,检测MEMS结构的运动,并输出与运动相对应的运动电流信号; 放大部分22,放大从运动检测部分输出的运动电流信号,并将其作为运动电压信号输出; 增益调整部分24,放大来自驱动信号产生部分的驱动信号,并将其作为驱动信号输出; 差分电路部分25对从放大部分和增益调节部分输入的信号进行加/减,并且其中驱动信号输出取消的运动信号; 以及运动信号检测部分26,选择并输出从差分电路部分输入的运动信号的预定频率的运动信号。 版权所有(C)2005,JPO&NCIPI