专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2007142368A Gallium-nitride-based light-emitting diode element of perpendicular structure 审中-公开
标题翻译：基于玻璃 - 氮化物的发光二极管元件结构
公开(公告)号：JP2007142368A
公开(公告)日：2007-06-07
申请号：JP2006251270
申请日：2006-09-15
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： JANG TAE SUNG , LEE SU YEOL , CHOI SEOK BEOM
IPC分类号： H01L33/06 , H01L33/10 , H01L33/32
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/385
摘要： PROBLEM TO BE SOLVED: To provide a gallium-nitride-based light-emitting diode element of perpendicular structure. SOLUTION: The gallium-nitride-based light-emitting diode element of perpendicular structure comprises an n-type electrode 110; a luminous structure where an n-type gallium nitride layer 120, an active layer 130, and a p-type gallium nitride layer 140 are successively formed on the lower surface of the n-type electrode; a p-type electrode formed on the lower surface of the luminous structure; a protective film that covers the side and lower surface of the luminous structure is formed so that it exposes one portion of the p-type electrode 150, and comprises a scattering Bragg reflector; a plated seed layer formed on the lower surface of the protective film and the p-type electrode; and a structure support layer formed on the lower surface of the plated seed layer. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种垂直结构的氮化镓基发光二极管元件。解决方案：垂直结构的氮化镓基发光二极管元件包括n型电极110; n型氮化镓层120，有源层130和p型氮化镓层140依次形成在n型电极的下表面上的发光结构; 形成在发光体的下面的p型电极; 形成覆盖发光体的侧面和下表面的保护膜，使得其露出p型电极150的一部分，并且包括散射布拉格反射器; 形成在保护膜的下表面上的电镀种子层和p型电极; 以及形成在电镀种子层的下表面上的结构支撑层。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2005117005A Nitride semiconductor light emitting element and its manufacturing method 审中-公开
标题翻译：氮化物半导体发光元件及其制造方法
公开(公告)号：JP2005117005A
公开(公告)日：2005-04-28
申请号：JP2004128037
申请日：2004-04-23
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： CHOI SEOK BEOM , GO HOGEN , CHOI HEE SEOK
IPC分类号： H01L29/24 , H01L33/06 , H01L33/20 , H01L33/32 , H01L33/40 , H01L33/00
CPC分类号： H01L33/32 , H01L33/025
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a high luminance light emitting diode in which a current injection efficiency is improved. SOLUTION: A nitride semiconductor light emitting element includes an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer so that part of the upper surface of the n-type nitride semiconductor layer is exposed, a p-type nitride semiconductor layer formed on the active layer, a heavily doped region formed on the upper part of the p-type nitride semiconductor layer by doping a p-type impurity in high concentration, a counter doping region formed on the heavily doped region by doping an n-type impurity in high concentration, and an n-side electrode and a p-side electrode respectively formed on the exposed upper surface of the n-type nitride semiconductor layer and the counter doping region. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供其中提高电流注入效率的高亮度发光二极管的制造方法。解决方案：氮化物半导体发光元件包括形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，使得n型氮化物半导体的上表面的一部分形成在有源层上的p型氮化物半导体层，通过以高浓度掺杂p型杂质而形成在p型氮化物半导体层的上部的重掺杂区域，形成的反掺杂区域通过掺杂高浓度的n型杂质和分别形成在n型氮化物半导体层和反相掺杂区域的暴露的上表面上的n侧电极和p侧电极而在重掺杂区域上。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2007150314A Gallium-nitride-based light emitting diode with vertical-structure 审中-公开
标题翻译：基于玻璃 - 氮化物的发光二极管与垂直结构
公开(公告)号：JP2007150314A
公开(公告)日：2007-06-14
申请号：JP2006317152
申请日：2006-11-24
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： LEE SU YEOL , KIM DONG WOO , CHOI SEOK BEOM , KIM TAE JUN
IPC分类号： H01L33/06 , H01L33/20 , H01L33/32 , H01L33/38
CPC分类号： H01L33/20 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a vertical-structure gallium-nitride-based light emitting diode in which a horizontal path where photons generated in an active layer are laterally emitted is shortened so that the number of total reflections of photons between a p-type electrode and a light emitting surface is reduced, and a critical angle is enlarged to maximize an improvement effect of an external quantum efficiency. SOLUTION: A vertical-structure gallium-nitride-based light emitting diode comprises: an n-type bonding pad 110; an n-type electrode 120 formed under the n-type bonding pad; a light emitting structure formed by sequentially laminating an n-type gallium nitride layer 130, an active layer 140, and a p-type gallium nitride layer 150 under the n-type electrode; a p-type electrode 160 formed under the light emitting structure; and a support layer 170 formed under the p-type electrode. The light emitting structure has one or more trenches 200 which are formed by removing the active layer of the light emitting structure at a predetermined distance from the n-type electrode in a direction from the outermost side of the light emitting structure to the n-type electrode. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种垂直结构的氮化镓基发光二极管，其中在有源层中产生的光子横向发射的水平路径被缩短，使得光子之间的总反射次数 p型电极和发光面减小，并且临界角被扩大以最大化外部量子效率的改进效果。解决方案：垂直结构的氮化镓基发光二极管包括：n型接合焊盘110; 形成在n型接合焊盘下面的n型电极120; 通过在n型电极下依次层叠n型氮化镓层130，有源层140和p型氮化镓层150而形成的发光结构; 形成在发光结构下面的p型电极160; 以及形成在p型电极下方的支撑层170。发光结构具有一个或多个沟槽200，其通过从发光结构的最外侧到n型的方向从n型电极去除预定距离的发光结构的有源层而形成电极。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006128675A Method of manufacturing multiwavelength semiconductor laser 审中-公开
标题翻译：制造多波长半导体激光器的方法
公开(公告)号：JP2006128675A
公开(公告)日：2006-05-18
申请号：JP2005306024
申请日：2005-10-20
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： KIM JIN CHUL , LEE SU YEOL , KIM CHANG ZOO , HAN SANG HEON , SONG KEUN MAN , KIM TAE-JOON , CHOI SEOK BEOM
IPC分类号： H01S5/22 , H01S5/026
CPC分类号： H01S5/4031 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02488 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01S5/2231 , H01S5/4087 , H01S2304/04
摘要： PROBLEM TO BE SOLVED: To provide methods of manufacturing a two-wavelength semiconductor laser device and a multiwavelength semiconductor laser device which have excellent crystallinity and easy laser alignment. SOLUTION: A method of manufacturing a multiwavelength semiconductor laser comprises: a step of providing a substrate 31 having an upper surface separated into at least first and second areas; a step of forming a first dielectric mask 32 on the substrate to expose the first area 31a only; a step of growing epitaxial layers 33a, 34a, 35a, and 36a for a first semiconductor laser on the first area of the substrate; a step of forming a second dielectric mask 37 on the substrate to expose the second area 31b only; and a step of growing epitaxial layers 33b, 34b, 35b, and 36b for a second semiconductor laser on the second area of the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有优异的结晶度和易于激光对准的双波长半导体激光器件和多波长半导体激光器件的制造方法。解决方案：制造多波长半导体激光器的方法包括：提供具有分隔成至少第一和第二区域的上表面的基板31的步骤; 在基板上形成第一电介质掩模32以暴露第一区域31a的步骤; 在衬底的第一区域上生长用于第一半导体激光器的外延层33a，34a，35a和36a的步骤; 在基板上形成第二电介质掩模37以暴露第二区域31b的步骤; 以及在衬底的第二区域上生长用于第二半导体激光器的外延层33b，34b，35b和36b的步骤。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2008047858A Vertical structure nitride semiconductor light emitting device and its manufacturing method 有权
标题翻译：立式结构氮化物半导体发光器件及其制造方法
公开(公告)号：JP2008047858A
公开(公告)日：2008-02-28
申请号：JP2007104242
申请日：2007-04-11
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： YOON SANG HO , LEE SU YEOL , BAIK DOO GO , CHOI SEOK BEOM , JANG TAE SUNG , WOO JONG GUN
IPC分类号： H01L33/12 , H01L33/22 , H01L33/32 , H01L33/36
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： PROBLEM TO BE SOLVED: To provide a vertical structure nitride semiconductor light emitting device capable of simultaneously improving electrical characteristics and optical properties of a light emitting device, and also to provide a method of manufacturing the same. SOLUTION: This vertical structure nitride semiconductor light emitting device comprises: a structure support layer 200; a p-type electrode 150 formed on the structure support layer; a p-type nitride semiconductor layer 140 formed on the p-type electrode 150; an active layer 130 formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer 120 formed on the active layer; an n-type electrode 160 formed in part on the n-type nitride semiconductor layer; and a buffer layer 110 with a convex and concave pattern which is formed in a region on the n-type nitride semiconductor layer where the n-type electrode 160 is not formed, wherein the surface of the n-type nitride semiconductor layer in contacting with the n-type electrode is flat. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够同时改善发光器件的电特性和光学特性的垂直结构氮化物半导体发光器件，并提供其制造方法。解决方案：该垂直结构氮化物半导体发光器件包括：结构支撑层200; 形成在结构支撑层上的p型电极150; 形成在p型电极150上的p型氮化物半导体层140; 形成在p型氮化物半导体层上的有源层130; 形成在有源层上的n型氮化物半导体层120; 形成在n型氮化物半导体层上的n型电极160; 以及形成在n型氮化物半导体层上未形成n型电极160的区域中的凸凹图案的缓冲层110，其中n型氮化物半导体层的表面与 n型电极是平的。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2007053381A Method for manufacturing vertical gallium nitride based led device 审中-公开
标题翻译：制造立式氮化镓基LED装置的方法
公开(公告)号：JP2007053381A
公开(公告)日：2007-03-01
申请号：JP2006221931
申请日：2006-08-16
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： OH JEONG TAK , LEE JAE HOON , CHOI SEOK BEOM
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/0079 , H01L33/007
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a vertical gallium nitride based LED device. SOLUTION: The method includes steps of forming an insulating pattern 300 on a substrate 100 to define unit LED regions having a predetermined size, forming a light emitting structure 160 by laminating an n-type gallium nitride based semiconductor layer 110, an active layer 120 and a p-type gallium nitride based semiconductor layer 130 sequentially on the substrate except for the regions where the insulating pattern is formed, dividing the light emitting structure into the unit LEDs of a predetermined size by removing the insulating pattern, forming a p-type electrode on each of the divided light emitting structures, forming a structure support layer on the p-type electrode, exposing the n-type gallium nitride based semiconductor layer by removing the substrate, and forming an n-type electrode on each of the exposed n-type gallium nitride based semiconductor layers. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造垂直氮化镓基LED器件的方法。解决方案：该方法包括在基板100上形成绝缘图案300以限定具有预定尺寸的单位LED区域的步骤，通过层叠n型氮化镓基半导体层110，活性物质层120和p型氮化镓系半导体层130，除了形成有绝缘图案的区域之外，在基板上顺序地除去绝缘图案，通过除去绝缘图案将发光结构分割为规定尺寸的单位LED，形成p 在每个分割的发光结构上形成结构支撑层，在p型电极上形成结构支撑层，通过去除衬底来暴露n型氮化镓基半导体层，并在每一个上形成n型电极暴露的n型氮化镓基半导体层。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2008109090A Vertical light-emitting diode element and manufacturing method thereof 有权
标题翻译：垂直发光二极管元件及其制造方法
公开(公告)号：JP2008109090A
公开(公告)日：2008-05-08
申请号：JP2007215092
申请日：2007-08-21
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： LEE SU YEOL , YOON SANG HO , BAIK DOO GO , CHOI SEOK BEOM , JANG TAE SUNG , WOO JONG GUN
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To provide a vertical light-emitting diode element that can alleviate contact resistance of n-type electrode and n-type GaN layer, and can improve thermal stability, and the manufacturing method thereof. SOLUTION: TThe vertical light-emitting diode element of this invention comprises an n-type electrode 160, an n-type GaN layer 110 formed on the bottom surface of the n-type electrode 160 that has a Ga + N layer 110c containing more Ga element than N element on the surface touching the n-type electrode 160, an active layer 120 formed on the bottom surface of the n-type GaN layer 110, a p-type GaN layer 130 formed on the bottom surface of the active layer 120, a p-type electrode 140 formed on the bottom surface of the p-type GaN layer 130, and a structure support layer 150 formed on the bottom surface of the p-type electrode 140. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以减轻n型电极和n型GaN层的接触电阻并且可以提高热稳定性的垂直发光二极管元件及其制造方法。本发明的垂直发光二极管元件包括n型电极160，形成在n型电极160的底表面上的n型GaN层110，其具有Ga + SP + 在与n型电极160接触的表面上含有比N元素多的Ga元素的N层110c，形成在n型GaN层110的底面上的有源层120，p型GaN层130 形成在有源层120的底表面上，形成在p型GaN层130的底表面上的p型电极140和形成在p型电极140的底表面上的结构支撑层150。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2008047861A Vertical-structure gallium nitride light-emitting diode device and its manufacturing method 有权
标题翻译：垂直结构氮化钠发光二极管器件及其制造方法
公开(公告)号：JP2008047861A
公开(公告)日：2008-02-28
申请号：JP2007125423
申请日：2007-05-10
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： CHOI SEOK BEOM , O BANWON , WOO JONG GUN , BAIK DOO GO
IPC分类号： H01L33/06 , H01L33/22 , H01L33/32
CPC分类号： H01L33/02 , H01L33/22
摘要： PROBLEM TO BE SOLVED: To provide a vertical-structure gallium nitride light-emitting diode device capable of improving external quantum efficiency by enhancing light extraction efficiency. SOLUTION: This vertical-structure gallium nitride light-emitting diode device comprises: an n-type electrode 170; light-emitting structure layers formed on the under surface of the n-type electrode (the light-emitting structure layers comprises: an n-type nitride gallium layer 121 including a concavo-convex surface 160 which consists of a first concavo-convex structure 160a formed regularly periodically and a second concavo-convex structure 160b formed irregularly periodically on the first concavo-convex structure 160a; an active layer 124 formed on the under surface of the n-type nitride gallium layer; and a p-type nitride gallium layer 126 formed on the under surface of the active layer); a p-type electrode 130 formed on the under surface of the p-type nitride gallium layer; and a structural support layer 150 formed on the under surface of the p-type electrode. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够通过提高光提取效率来提高外部量子效率的垂直结构的氮化镓发光二极管装置。解决方案：该垂直结构的氮化镓发光二极管装置包括：n型电极170; 形成在n型电极的下表面上的发光结构层（发光结构层包括：包括凹凸表面160的n型氮化镓层121，第一凹凸结构160a 规则地周期性地形成，并且在第一凹凸结构160a上周期性地不规则地形成的第二凹凸结构160b;形成在n型氮化物镓层的下表面上的有源层124;以及p型氮化镓层126 形成在活性层的下表面上）; 形成在p型氮化镓层的下表面上的p型电极130; 以及形成在p型电极的下表面上的结构支撑层150。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2008053685A Vertical-structure gallium nitride light-emitting diode element, and its manufacturing method 审中-公开
标题翻译：垂直结构氮化钠发光二极管元件及其制造方法
公开(公告)号：JP2008053685A
公开(公告)日：2008-03-06
申请号：JP2007111743
申请日：2007-04-20
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： LEE SU YEOL , O BANWON , BAIK DOO GO , JANG TAE SUNG , WOO JONG GUN , CHOI SEOK BEOM , YOON SANG HO , KIM DONU , YEO IN TAE
IPC分类号： H01L33/06 , H01L33/32 , H01L33/42 , H01L33/44
CPC分类号： H01L33/387 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a vertical-structure gallium nitride light-emitting diode element, and to provide its manufacturing method.
SOLUTION: The light-emitting diode element of the invention is manufactured by the steps of: forming a light emitting structure by successively disposing an n-type gallium nitride semiconductor layer, an active layer and a p-type gallium nitride semiconductor layer on a substrate; etching the light emitting structure to separate it by a size for unit LED elements; forming a p-type electrode on each of the separated light emitting structures; filling, with non-conductive material, areas between the respective separated light emitting structures; forming a metal seed layer on the structure thus obtained; forming a first plated layer on the metal seed layer from which the areas between the respective light emitting structures are removed; forming a second plated layer on the first plated layer and the surface of the metal seed layer between the respective first plated layer areas; separating the substrate from the light emitting structures; removing the non-conductive material between the respective light emitting structures exposed by the separation of the substrate; forming an n-type electrode on the n-type gallium nitride semiconductor layer; and removing the metal seed layer and second plated layer portions between the respective light emitting structures, thereby obtaining the vertical-structure gallium nitride light-emitting diode element.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种垂直结构的氮化镓发光二极管元件，并提供其制造方法。解决方案：本发明的发光二极管元件通过以下步骤制造：通过依次配置n型氮化镓半导体层，有源层和p型氮化镓半导体层来形成发光结构在基材上蚀刻发光结构以将其分开单位LED元件的尺寸; 在每个分离的发光结构上形成p型电极; 用非导电材料填充各个分离的发光结构之间的区域; 在如此获得的结构上形成金属种子层; 在所述金属籽晶层上形成第一镀层，除去所述各个发光结构之间的区域; 在所述第一镀层和所述金属种子层的相应的第一镀层区域之间形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底暴露的各个发光结构之间的非导电材料; 在n型氮化镓半导体层上形成n型电极; 并且在各个发光结构之间移除金属种子层和第二镀层部分，从而获得垂直结构的氮化镓发光二极管元件。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2007036240A Gallium-nitride-based light-emitting diode element having vertical structure and manufacturing method thereof 有权
标题翻译：基于玻璃 - 氮化物的发光二极管元件具有垂直结构及其制造方法
公开(公告)号：JP2007036240A
公开(公告)日：2007-02-08
申请号：JP2006199972
申请日：2006-07-21
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： LEE JAE HOON , OH BANG WON , CHOI HEE SEOK , OH JEONG TAK , CHOI SEOK BEOM , LEE SU YEOL
IPC分类号： H01L33/06 , H01L33/12 , H01L33/22 , H01L33/32
CPC分类号： H01L33/22 , H01L33/14
摘要： PROBLEM TO BE SOLVED: To provide a gallium-nitride-based light-emitting diode element having vertical structure, and to provide a manufacturing method of the gallium-nitride-based light-emitting diode element. SOLUTION: The gallium-nitride-based light-emitting diode element comprises an n-type electrode 170; a first n-type gallium nitride layer 150a that has an irregular pattern 180, having a plurality of projections for increasing a surface area and is formed on the lower surface of the first n-type galium nitride; and a first AlGaN layer 200a, a GaN layer 210, a second AlGaN layer 200b, a second n-type gallium nitride layer 150b, an active layer 140, a p-type gallium nitride layer 130, a p-type electrode 120, and a structure support layer 110 formed successively on the lower surface of the first n-type gallium nitride layer. The manufacturing method of the gallium-nitride-based light-emitting diode element of a vertical structure is also provided. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有垂直结构的氮化镓基发光二极管元件，并提供氮化镓基发光二极管元件的制造方法。解决方案：氮化镓系发光二极管元件包括n型电极170; 具有不规则图案180的第一n型氮化镓层150a，具有用于增加表面积的多个突起，并形成在第一n型氮化镓的下表面上; 第一AlGaN层200a，GaN层210，第二AlGaN层200b，第二n型氮化镓层150b，有源层140，p型氮化镓层130，p型电极120和在第一n型氮化镓层的下表面上连续形成的结构支撑层110。还提供了垂直结构的氮化镓基发光二极管元件的制造方法。版权所有（C）2007，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式