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1. 发明专利

JP2010028072A Nitride semiconductor light emitting element 有权
标题翻译：氮化物半导体发光元件
公开(公告)号：JP2010028072A
公开(公告)日：2010-02-04
申请号：JP2008328560
申请日：2008-12-24
申请人： Kwangju Inst Of Science & Technol , Samsung Electro Mechanics Co Ltd , 三星電機株式会社 , 光州科學技術院
发明人： KANG SANG WON , PARK SEONG JU , KWON MIN KI , RI SOSHUN , CHO JOO YOUNG , KIM YONG-CHUN , HAN SANG HEON , LEE DONG JU , OH JEONG TAK , KIM JE WON
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L33/025 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element capable of preventing diffusion of Mg doped in a barrier layer. SOLUTION: In this nitride semiconductor light emitting element wherein a buffer layer, an N-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially stacked on a substrate, the active layer has a multiple quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-type doped barrier layer doped with a p-type dopant and an undoped barrier layer at least on one side of a p-type GaN layer. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止在阻挡层中掺杂的Mg扩散的氮化物半导体发光元件。解决方案：在缓冲层，N型氮化物半导体层，有源层和p型氮化物半导体层依次层叠在衬底上的氮化物半导体发光元件中，有源层具有多个量子其中多个势垒层和多个阱层彼此交替布置，并且所述多个势垒层中的至少一个包括第一势垒层，所述第一阻挡层包括掺杂有p型掺杂阻挡层的p型掺杂阻挡层掺杂剂和至少在p型GaN层的一侧上的未掺杂势垒层。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2008199004A Nitride semiconductor light emitting element and manufacturing method 有权
标题翻译：氮化物半导体发光元件和制造方法
公开(公告)号：JP2008199004A
公开(公告)日：2008-08-28
申请号：JP2008009835
申请日：2008-01-18
申请人： Samsung Electro-Mechanics Co Ltd , サムソンエレクトロ−メカニックスカンパニーリミテッド.
发明人： KIM SUN WOON , KIM DONG JOON , LEE DONG JU
IPC分类号： H01L33/10 , H01L33/32 , H01L33/44
CPC分类号： H01L33/382 , H01L33/08
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element with improved light extraction efficiency, and a manufacturing method. SOLUTION: A nitride semiconductor light emitting element includes: a light emitting stacked structure having first and second conductive nitride semiconductor layers and an active layer formed between them; first and second electrode pads formed so as to be electrically connected to each one of the first and second conductive nitride semiconductor layers; a plurality of patterns in a lower part of the second electrode pad so as to have a depth up to at least a part of the first conductive nitride semiconductor layer; and an insulating film formed on an inner surface of the plurality of patterns so as to electrically insulate an area of the light emitting stacked structure exposed by the plurality of patterns and the second electrode pad. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有改善的光提取效率的氮化物半导体发光元件和制造方法。解决方案：氮化物半导体发光元件包括：发光层叠结构，其具有第一和第二导电氮化物半导体层和在它们之间形成的有源层; 第一和第二电极焊盘，其形成为电连接到第一和第二导电氮化物半导体层中的每一个; 在所述第二电极焊盘的下部中的多个图案，以便具有直到所述第一导电氮化物半导体层的至少一部分的深度; 以及形成在多个图案的内表面上的绝缘膜，以使由多个图案暴露的发光层叠结构的区域和第二电极焊盘电绝缘。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007180499A Nitride semiconductor light-emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：JP2007180499A
公开(公告)日：2007-07-12
申请号：JP2006286528
申请日：2006-10-20
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： HAN SANG HEON , GO HOGEN , KIM JE WON , SHIM HYUN WOOK , KANG JOONG SEO , LEE DONG JU
IPC分类号： H01L33/06 , H01L33/12 , H01L33/14 , H01L33/32
CPC分类号： H01L33/04 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device whose brightness and reliability have been improved.
SOLUTION: This nitride semiconductor light-emitting device comprises an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer which have been formed sequentially on a substrate; an n-side electrode provided on a part of an upper surface of of the n-type nitride semiconductor layer; and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. In addition, the intermediate layer has a multilayer structure having three or more layers with different band gaps and lies in a position lower than that of the n-side electrode.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种其亮度和可靠性得到改善的氮化物半导体发光器件。解决方案：该氮化物半导体发光器件包括在衬底上顺序形成的n型氮化物半导体层，有源层和p型氮化物半导体层; 设置在所述n型氮化物半导体层的上表面的一部分上的n侧电极; 以及形成在所述基板和所述n型氮化物半导体层之间的至少一个中间层。此外，中间层具有三层以上具有不同带隙的层并且位于比n侧电极低的位置的多层结构。版权所有（C）2007，JPO＆INPIT

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