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    • 3. 发明专利
    • Method for preparing silicon carbide single crystal
    • 制备单晶碳化硅的方法
    • JP2006117441A
    • 2006-05-11
    • JP2004304132
    • 2004-10-19
    • Sumitomo Metal Ind Ltd住友金属工業株式会社
    • KUSUNOKI KAZUHIKOKAMEI KAZUTOYASHIRO MASANARIYANAI AKIHIROUEDA YOSHIHISAITO YUTAKAOKADA NOBUHIRO
    • C30B29/38C30B17/00
    • C30B17/00C30B29/36
    • PROBLEM TO BE SOLVED: To manufacture a good quality silicon carbide single crystal free from inclusions at a high crystal growth speed even when the single crystal has such a large size that the diameter is ≥1 in and the thickness is ≥5 μm, in the manufacturing of the silicon carbide single crystal by a solution growth method comprising immersing an SiC seed crystal fixed to a seed stem in a solution of SiC in an Si or Si alloy melt in a rotating crucible, and growing an SiC single crystal layer on the SiC seed crystal by making SiC into a supersaturated state by the supercooling of at least solution around the seed crystal. SOLUTION: In a method for manufacturing the silicon carbide single crystal, the single crystal is grown while utilizing an accelerated crucible rotation technique wherein acceleration of the rotation of the crucible to a prescribed rotation number, retention at the rotation number and deceleration to a low or zero rotation number are repeated. The rotation direction of the crucible may be reversed at every acceleration. Further, the seed stem may be rotated in synchronization with the rotation of the crucible in the direction being the same with or reverse to that of the rotation of the crucible. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:即使单晶具有如此大的直径≥1in且厚度≥5μm的大尺寸,也可以以高晶体生长速度制造不含夹杂物的优质碳化硅单晶 在通过溶液生长方法制造碳化硅单晶的过程中,包括将固定在种茎上的SiC晶种浸入Si或Si合金熔体中的SiC溶液中,并生长SiC单晶层 在SiC晶种上通过使至少溶液在晶种周围的过冷而使SiC进入过饱和状态。 解决方案:在制造碳化硅单晶的方法中,利用加速坩埚旋转技术生长单晶,其中将坩埚的旋转加速到规定的转数,转数的保持和减速到 重复低或零转数。 坩埚的旋转方向可以在每个加速度下反转。 此外,种子茎可以与坩埚的旋转同步地与坩埚的旋转方向相同或相反的方向旋转。 版权所有(C)2006,JPO&NCIPI
    • 5. 发明专利
    • PICTURE PROCESSOR
    • JPH09231357A
    • 1997-09-05
    • JP3497196
    • 1996-02-22
    • SUMITOMO METAL IND
    • OOTA IKUYOSHIYANAI AKIHIRO
    • G06T7/60G06T7/00
    • PROBLEM TO BE SOLVED: To more accurately judge a matching rate of shapes between optional picture areas. SOLUTION: The centroid of a picture area is calculated by a centroid calculating circuit 104 and the contour of the picture area detected by a contour detecting circuit 105 is converted into polar coordinate data around the centroid. A subtraction circuit 113 subtracts a value obtained by multiplying the mean value r1 ' of a contour function r1 (θi ) by a proportional constant (k) from the function r1 (θi ) to find out a differential function. On the other hand, a subtraction circuit 114 subtracts a value obtained by multiplying the mean value r2 ' of the other contour function r2 (θi ) to be compared by a proportional constant (k) from the function r2 (θi ) to find out a differential function. A cosine calculating circuit 115 calculates a cosine cosz of an angle (z) formed by two differential functions and a threshold circuit 116 compares the cosine cosz with a threshold. When the cosine cosz is smaller than the threshold, a phase is shifted and similar matching rate judgement is repeated.
    • 8. 发明专利
    • DECORATIVE COATED METAL PLATE
    • JPH06206047A
    • 1994-07-26
    • JP131593
    • 1993-01-07
    • SUMITOMO METAL IND
    • IKISHIMA KENJIYOSHIOKA AKITOYANAI AKIHIROSHIODA TOSHIAKI
    • B05D1/38B05D5/06B05D7/14B32B15/08
    • PURPOSE:To obtain a low cost decorative coated metal plate capable of being produced with good productivity, reproducibility and coating workability by successively providing a substrate treatment layer, an org. resin printing layer having planar distribution of specific film thickness difference and the org. resin coating layer applied to the printing layer along the unevenness thereof on a metal plate. CONSTITUTION:A decorative coated metal plate is obtained by applying phosphoric acid type and/or chromate type substrate treatment to an arbitrary metal plate 1 at first and providing a primer layer 5 on the substrate treatment layer 2 after substrate treatment using primer coating and further providing an org. resin printing layer having planar distribution of film thickness difference of at least 2mum or more on the layer 5 and providing the org. resin film layer 4 applied to the printing layer along the protruding parts 3 thereof. By forming three-dimensional patterns corresponding to a purpose by a printing method and providing the coating film to the entire surface thereof along the protruding parts 3, the surface shape of the uppermost film layer can be controlled.