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    • 1. 发明专利
    • Method for preparing silicon carbide single crystal
    • 制备单晶碳化硅的方法
    • JP2006117441A
    • 2006-05-11
    • JP2004304132
    • 2004-10-19
    • Sumitomo Metal Ind Ltd住友金属工業株式会社
    • KUSUNOKI KAZUHIKOKAMEI KAZUTOYASHIRO MASANARIYANAI AKIHIROUEDA YOSHIHISAITO YUTAKAOKADA NOBUHIRO
    • C30B29/38C30B17/00
    • C30B17/00C30B29/36
    • PROBLEM TO BE SOLVED: To manufacture a good quality silicon carbide single crystal free from inclusions at a high crystal growth speed even when the single crystal has such a large size that the diameter is ≥1 in and the thickness is ≥5 μm, in the manufacturing of the silicon carbide single crystal by a solution growth method comprising immersing an SiC seed crystal fixed to a seed stem in a solution of SiC in an Si or Si alloy melt in a rotating crucible, and growing an SiC single crystal layer on the SiC seed crystal by making SiC into a supersaturated state by the supercooling of at least solution around the seed crystal. SOLUTION: In a method for manufacturing the silicon carbide single crystal, the single crystal is grown while utilizing an accelerated crucible rotation technique wherein acceleration of the rotation of the crucible to a prescribed rotation number, retention at the rotation number and deceleration to a low or zero rotation number are repeated. The rotation direction of the crucible may be reversed at every acceleration. Further, the seed stem may be rotated in synchronization with the rotation of the crucible in the direction being the same with or reverse to that of the rotation of the crucible. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:即使单晶具有如此大的直径≥1in且厚度≥5μm的大尺寸,也可以以高晶体生长速度制造不含夹杂物的优质碳化硅单晶 在通过溶液生长方法制造碳化硅单晶的过程中,包括将固定在种茎上的SiC晶种浸入Si或Si合金熔体中的SiC溶液中,并生长SiC单晶层 在SiC晶种上通过使至少溶液在晶种周围的过冷而使SiC进入过饱和状态。 解决方案:在制造碳化硅单晶的方法中,利用加速坩埚旋转技术生长单晶,其中将坩埚的旋转加速到规定的转数,转数的保持和减速到 重复低或零转数。 坩埚的旋转方向可以在每个加速度下反转。 此外,种子茎可以与坩埚的旋转同步地与坩埚的旋转方向相同或相反的方向旋转。 版权所有(C)2006,JPO&NCIPI
    • 3. 发明专利
    • Ultrasonic flaw detection method and device
    • 超声波检测方法及装置
    • JP2009236668A
    • 2009-10-15
    • JP2008082782
    • 2008-03-27
    • Sumitomo Metal Ind Ltd住友金属工業株式会社
    • UEDA YOSHIHISAYAMANO MASAKIIKEDA MASAMI
    • G01N29/44G01B17/00G01N29/04
    • G01N29/069G01N29/262G01N29/265G01N2291/106G01N2291/2632
    • PROBLEM TO BE SOLVED: To provide a device, etc. capable of highly precisely and simply measuring a defect area extending along a rolling direction.
      SOLUTION: An ultrasonic flaw detection device 100 is provided with a one-dimensional array ultrasonic probe 10, in which a plurality of vibrators 11 are arranged in a direction perpendicular to a rolling direction of an inspected material M, and a signal processing means 2. The signal processing means executes the following (1) to (6): (1) generating an aperture composite image of a flaw detection signal for each cross section of the inspected material; (2) generating a maximum value distribution of the flaw detection signal in the arranged direction of the vibrators; (3) calculating a flaw width in each cross section based on the maximum value distribution; (4) generating a maximum value distribution of the flaw detection signal in the rolling direction from the maximum value distribution in a plurality of the cross sections of the inspected material; (5) calculating the flaw length based on the maximum value distribution of the flaw detection signal in the rolling direction; and (6) calculating the flaw area based on the calculated flaw length and the calculated flaw width of each cross section.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供能够高精度地且简单地测量沿轧制方向延伸的缺陷区域的装置等。 解决方案:超声波探伤装置100设置有一维阵列超声波探头10,其中多个振动器11沿与检查材料M的滚动方向垂直的方向布置,并且信号处理 信号处理装置执行以下(1)至(6):(1)产生检查材料的每个横截面的缺陷检测信号的孔径合成图像; (2)在振子的排列方向上产生探伤信号的最大值分布; (3)基于最大值分布计算每个横截面中的缺陷宽度; (4)从检查材料的多个横截面中的最大值分布生成轧制方向上的缺陷检测信号的最大值分布; (5)基于所述探伤信号在轧制方向上的最大值分布来计算所述缺陷长度; 和(6)基于所计算的缺陷长度和计算每个横截面的裂纹宽度来计算缺陷面积。 版权所有(C)2010,JPO&INPIT
    • 4. 发明专利
    • Method and apparatus for ultrasonic flaw detection, and steel product
    • 超声波检测方法与装置及钢铁产品
    • JP2008070325A
    • 2008-03-27
    • JP2006251344
    • 2006-09-15
    • Sumitomo Metal Ind Ltd住友金属工業株式会社
    • UEDA YOSHIHISAKAWAKAMI TETSUOHAMAMOTO TOSHIMITSUMATSUO MASAHIKOYADOGUCHI TETSUYA
    • G01N29/04G01N29/06G01N29/44
    • PROBLEM TO BE SOLVED: To provide an ultrasonic flaw detecting method and its apparatus, capable of stably and reliably detecting subsurface flaws in the vicinity of surfaces, even when there are disturbances of the position of the object material of flaw detection and that disturbances, such as transfer plays and variations in the echo intensity, and to provide steel products which are the results thereof. SOLUTION: A probe 1 is made to relatively move along a surface of an object material P of flaw detection at each prescribed movement pitch D to transmit ultrasonic waves W substantially perpendicular to the object material P of flaw detection from the probe 1, receive reflected waves E, and acquire flaw detection signals. Reference positions H are set, on the basis of bottom echoes G in the acquired flaw detection signals; and flaw detection signals for each movement pitch D are adjusted and combined, in such a way that the reference positions H matches to generate two-dimensional image data. Flaws in a region in front of the reference positions H in the two-dimensional image data are extracted. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了提供一种能够稳定可靠地检测表面附近的地下瑕疵的超声波探伤方法及其装置,即使存在瑕疵检测对象物的位置的干扰,并且, 扰动,例如转移剧烈和回波强度的变化,并提供作为其结果的钢产品。 解决方案:使探头1沿着每个规定的移动间距D沿着探伤物体P的表面相对移动,以从探针1发射基本上垂直于探伤物体P的物体P的超声波W, 接收反射波E,并获取探伤信号。 基于所获取的探伤信号中的底部回波G来设定基准位置H; 并且以使得参考位置H匹配以产生二维图像数据的方式来调整和组合每个移动间距D的探伤信号。 提取二维图像数据中的参考位置H前方的区域中的缺陷。 版权所有(C)2008,JPO&INPIT