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1. 发明专利

JPS6319499A HIGH PURITY GAS MAINTAINING VESSEL 失效
公开(公告)号：JPS6319499A
公开(公告)日：1988-01-27
申请号：JP15871686
申请日：1986-07-08
申请人： SHOWA DENKO KK , HITACHI SHIPBUILDING ENG CO , OMI TADAHIRO
发明人： OMI TADAHIRO , MURAYAMA TAKAHIRO , MIURA TOSHIAKI , BABA YOSHIYASU , CHIBA SEIGO
IPC分类号： F17C1/00 , F17C1/10
摘要： PURPOSE:To provide a cylinder which is decreased in a gas adsorption amount, by a method wherein a very smooth passivated film is formed on the inner surface of the cylinder by an electrolytic composite polishing method. CONSTITUTION:The cathode side and the anode side of a d.c. or impulsive voltage are connected to a cathode 2 of a tool 1 and a metal to be polished, respectively. In polishing processing, electrolyte 5 is fed and the cathode 2 is rotated in a state to be pressed against the metal to be polished, a passive oxidation film formed in the uneven surface of the surface of the metal to be polished, and the projected part of the film is abraded for removal by means of polishing grains 6 to electrolytically elute the projected part of the metal to be polished in priority and selectively for polishing. This constitution enables provision of a cylinder which is decreased in a gas adsorption amount.

2. 发明专利

JPH07223072A METHOD FOR PENETRATION WELDING OF PIPING AND CORE FOR PENETRATION WELDING OF PIPING 失效
公开(公告)号：JPH07223072A
公开(公告)日：1995-08-22
申请号：JP1796794
申请日：1994-02-15
申请人： OMI TADAHIRO , HITACHI SHIPBUILDING ENG CO , HEC CORP
发明人： OMI TADAHIRO , NAKATANI MITSUYOSHI , NAKAJIMA HIROYUKI , OSAWA MORIHIKO , OTSUKA TAKAO , KITAGAWA SHIYOUICHI , YONEZAWA MASAHISA , BABA YOSHIYASU , SATO KENJI
IPC分类号： B23K9/16 , B23K9/028 , B23K9/035 , B23K9/32 , B23K37/00
摘要： PURPOSE:To prevent adhesion of fume on the inner surface of a tube by arranging a core in the tube, and accelerating the back shield gas at the part to be welded to carry away the fume produced at the part to be welded. CONSTITUTION:In the penetration welding of tubes 1, 2, a core 4 is inserted and arranged in a tube 2. The compressed air is fed from a compressed air feeding tube 7, a leg body 6 of the core 4 is extended, a seating plate 6a is abutted on the inner surface of the tube 2, and the core body 5 is mounted at the position of the axial center O of the tube 2. After the tube 1 is positioned at the welding position, the back shield gas G is fed from the tube 1 side to the part 3 to be welded. The flow speed V of the back shield gas G facing the part 3 to be welded is set to >=120mm/sec. by the effect of the core body 4. Then, the TIG welding is executed by moving the part 3 to be welded from the outer circumference side of the tubes 1, 2 around the circumference by a TIG electrode 8. The fume produced by the welding is carried away with the back shield gas G, and is not adhered to the inner surface of the tube 1.

3. 发明专利

JPH08267250A TIG WELDING METHOD AND TORCH DEVICE FOR TIG WELDING 失效
公开(公告)号：JPH08267250A
公开(公告)日：1996-10-15
申请号：JP7219395
申请日：1995-03-30
申请人： OMI TADAHIRO , HITACHI SHIPBUILDING ENG CO
发明人： OMI TADAHIRO , NAKATANI MITSUYOSHI , KITAGAWA SHIYOUICHI , OSAWA MORIHIKO , OTSUKA TAKAO , NAKAJIMA HIROYUKI , BABA YOSHIYASU , SATO KENJI
IPC分类号： B23K9/167 , B23K9/29
摘要： PURPOSE: To prevent sticking of metal fumes by injecting shield gas from the surrounding of a torch main body and sucking metal fumes while sucking shield gas from suction passage in a main body so as to suppress welding burn. CONSTITUTION: In executing TIG welding with a torch device 1 for welding, shield gas is supplied from a torch main body 2 in a shield box 4 and is sucked from a gas exhaust port 8 of torch main body 2. The shield gas is injected by a prescribed quantity from a gas injecting plate 5 at the lower face of shield box 4, passing the clearance (d) between the gas injecting plate and surface (b) of weld zone together with the metal fumes generated from molten pool, is sucked from the surrounding of electrode 3 of tip of torch main body 2 into a suction passage 2a and is exhausted from the exhaust port 8. By this method, sticking of metal fumes near weld zone is prevented, the weld zone is cooled down to a prescribed temp. by injected shield gas, the oxidation of weld zone due to welding heat, that is, welding burn is prevented.

4. 发明专利

JPH07116851A METHOD FOR WELDING STAINLESS STEEL 失效
公开(公告)号：JPH07116851A
公开(公告)日：1995-05-09
申请号：JP26285693
申请日：1993-10-21
申请人： OMI TADAHIRO , HITACHI SHIPBUILDING ENG CO
发明人： OMI TADAHIRO , NAKATANI MITSUYOSHI , NAKAJIMA HIROYUKI , OSAWA MORIHIKO , OTSUKA TAKAO , KITAGAWA SHIYOUICHI , BABA YOSHIYASU , SATO KENJI
IPC分类号： B23K9/16 , B23K9/23 , B23K9/32
摘要： PURPOSE:To simplify the manufacturing process and to reduce the manufacturing cost by specifying the atmospheric water content quantity of inert gas and sucking metallic fumes at the specified flow rate. CONSTITUTION:After the stainless steel 1 is arranged in a vacuum chamber, the degree of vacuum in the vacuum chamber is regulated to about 1X10 Torr. The inert gas is introduced into the vacuum chamber and the atmospheric water content quantity of the inert gas is regulated to

5. 发明专利

JPH0775871A WELDING METHOD FOR VESSEL FOR MANUFACTURING VLSI 失效
公开(公告)号：JPH0775871A
公开(公告)日：1995-03-20
申请号：JP2872894
申请日：1994-02-28
申请人： OMI TADAHIRO , HITACHI SHIPBUILDING ENG CO , NICHIZOU SEIMITSU KENMA KK
发明人： OMI TADAHIRO , OSAWA MORIHIKO , NAKAJIMA HIROYUKI , OTSUKA TAKAO , KITAGAWA SHIYOUICHI , NAKATANI MITSUYOSHI , BABA YOSHIYASU , SATO KENJI
IPC分类号： B23K9/00 , B23K9/16 , B23K9/23 , H01L23/02
摘要： PURPOSE:To suppress the production of welding burning and metallic fumes to the utmost, obviate the work such as grinding and precise cleaning which is aftertreatment of welding and simplify the manufacturing process. CONSTITUTION:When the vessel for manufacturing VLSI is assembled and welding by using stainless steel having the content of oxygen of

6. 发明专利

JPH06142919A WELDING METHOD FOR VESSEL FOR MANUFACTURING SUPER-LSI 失效
公开(公告)号：JPH06142919A
公开(公告)日：1994-05-24
申请号：JP28336492
申请日：1992-10-22
申请人： OMI TADAHIRO , HITACHI SHIPBUILDING ENG CO , NICHIZOU SEIMITSU KENMA KK
发明人： OMI TADAHIRO , OSAWA MORIHIKO , NAKAJIMA HIROYUKI , OTSUKA TAKAO , KITAGAWA SHIYOUICHI , NAKATANI MITSUYOSHI , BABA YOSHIYASU , SATO KENJI
IPC分类号： B23K9/00 , B23K9/16 , B23K9/23 , B23K9/32 , B23K101/12 , B23K101/40 , H01L23/02
摘要： PURPOSE:To dispense with a work such as grinding, precise cleaning, etc., being a post-treatment of welding, to simplify the manufacturing process, and also, to reduce the manufacturing cost. CONSTITUTION:According to this welding method for a vessel, at the time of assembling and welding the vessel for manufacturing a super-LSI by using stainless steel in which the content on Mn is

7. 发明专利

JPH0671434A METHOD FOR WELDING CLEAN CHAMBER 失效
公开(公告)号：JPH0671434A
公开(公告)日：1994-03-15
申请号：JP12630291
申请日：1991-05-30
申请人： OMI TADAHIRO , HITACHI SHIPBUILDING ENG CO , NICHIZOU SEIMITSU KENMA KK
发明人： OMI TADAHIRO , NAKAJIMA HIROYUKI , OTSUKA TAKAO , KITAGAWA SHIYOUICHI , BABA YOSHIYASU , SATO KENJI
IPC分类号： B23K9/00 , B23K9/16 , B23K9/29 , B23K9/32 , H01L21/02
摘要： PURPOSE:To prevent a welding block from sticking with welding fume, metal vapor, etc., by welding while sucking and discharging the welding fume and the metal vapor developed during welding through a welding torch in the argon gas atmosphere. CONSTITUTION:A preliminary assembled clean chamber 1 is set in a closed chamber 3 for welding operation and the rough suction is arranged with an vacuum pump 7. Successively, nitrogen gas is introduced into the closed chamber 3. This work is repeated in several times to make moisture and oxygen in the closed chamber 3 into the low values. Finally, after introducing the argon gas and making vacuum degree in the closed chamber 3 highly with a turbomolecular pump 8, the welding operation of the clean chamber 1 is executed. At the time of executing the welding operation, the welding fume, the metal vapor, etc., generated at the time of welding are exhausted to the outer part through the welding torch 4. By this method, the clean chamber having extremely high cleanness is obtd.

8. 发明专利

JP2003224079A HEAT TREATING METHOD, HEAT TREATING DEVICE AND MANUFACTURING METHOD FOR SILICON EPITAXIAL WAFER 审中-公开
公开(公告)号：JP2003224079A
公开(公告)日：2003-08-08
申请号：JP2002023684
申请日：2002-01-31
申请人： SHINETSU HANDOTAI KK , OMI TADAHIRO
发明人： KANETANI KOICHI , NISHIZAWA TAKESHI , OMI TADAHIRO , SUGAWA SHIGETOSHI
IPC分类号： H01L21/677 , H01L21/205 , H01L21/324 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a heat treating method capable of reducing the amount of brought-in moisture to a heat treating chamber (reaction chamber), a heat treating device and a manufacturing method for a silicon epitaxial wafer. SOLUTION: The heat treating method is for executing a heat treatment to a silicon single crystal substrate W by using a heat treating device 10 provided with a load lock chamber 20, a heat treating chamber 30, and a transfer chamber 40 for transferring the silicon single crystal substrate W between the load lock chamber 20 and the heat treating chamber 30. After performing work for enabling the atmosphere outside the heat treating device 10 to flow into the transfer chamber 40, a transfer chamber inner wall heating process is executed for heating the inner wall of the transfer chamber 40 to a temperature lower than the temperature of the heat treatment performed in the heat treating chamber 40. Thereafter, the silicon single crystal substrate W inside the load lock chamber 20 is carried through the transfer chamber 40 to the heat treating chamber 30, and the heat treatment is performed in the heat treating chamber 30. COPYRIGHT: (C)2003,JPO

9. 发明专利

JP2003214671A CLEAN ROOM 审中-公开
公开(公告)号：JP2003214671A
公开(公告)日：2003-07-30
申请号：JP2002014906
申请日：2002-01-24
申请人： OMI TADAHIRO , KUMAGAI GUMI CO LTD
发明人： OMI TADAHIRO , YAMADA TAKAHISA , SUMIHAMA HIROSHI , NAKAZAWA KATSUNORI , SUZUKI HIROKAZU , MURAOKA KENJI , MIURA MASAYASU
IPC分类号： E04F13/07 , E04F13/00 , E04F13/08 , E04F15/18 , E04H5/02 , F24F7/06
摘要： PROBLEM TO BE SOLVED: To solve a problem of a conventional clean room, wherein anti-static measures for walls and floors are not sufficiently made, so they are electrically charged, dusts accumulate due to static charge, a static electricity spark causes organic reaction, and then gas generate, causing problems in manufacturing semiconductors. SOLUTION: This clean room has a conductive sheet floor finishing material (conductive vinyl chloride sheet 4) extending to a wall substrate surface (2), and has a conductive sheet wall finishing material (conductive cloth 5) through which electricity is conducted to the sheet floor finishing material extending to the wall substrate surface. COPYRIGHT: (C)2003,JPO

10. 发明专利

JP2003213952A STRUT BASE WRAPPER FOR CLEAN ROOM 审中-公开
公开(公告)号：JP2003213952A
公开(公告)日：2003-07-30
申请号：JP2002014925
申请日：2002-01-24
申请人： OMI TADAHIRO , KUMAGAI GUMI CO LTD
发明人： OMI TADAHIRO , YAMADA TAKAHISA , SUMIHAMA HIROSHI , NAKAZAWA KATSUNORI , SUZUKI HIROKAZU , MURAOKA KENJI , MIURA MASAYASU
IPC分类号： E04B1/24 , E04H5/02
摘要： PROBLEM TO BE SOLVED: To solve a problem of a conventional clean room base wrapper, the problem being caused by non-conduction thereof to a steel strut and difficult grounding of current charged on a surface of the steel strut, resulting in stagnation of electric charge on the surface of the steel strut and adverse effect on semiconductor production, etc. SOLUTION: There is provided a new strut base wrapper 1 for the clean room, which consists of a base wrapping frame 2, and base wrapping concrete 5. The base wrapping frame 2 is formed of an electric conductor, and encloses the periphery of a base of the strut 42 in a manner being spaced away from the strut so as to form a space in which concrete is placed. The base wrapping concrete 5 is placed in the space between the base wrapping frame 2 and the strut 42. An inner side of the base wrapping frame 2 is electrically connected to the strut 42 via a conductive rod 4. Further, a surface of the strut, a floor surface, and an upper surface of the base wrapping concrete are subjected to conductive treatment, and the strut surface and the floor surface which have been subjected to the conductive treatment are brought into conduction with each other via the upper surface of the base wrapping concrete which has been subjected to the conductive treatment, and the conductive base wrapping frame. COPYRIGHT: (C)2003,JPO

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