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1. 发明专利

JP2003183637A NEUTRON SCINTILLATOR 审中-公开
公开(公告)号：JP2003183637A
公开(公告)日：2003-07-03
申请号：JP2002264969
申请日：2002-09-11
申请人： RIKAGAKU KENKYUSHO , HITACHI CHEMICAL CO LTD , DAIICHI KIDEN KK
发明人： SHIMIZU HIROHIKO , OKU TAKAYUKI , ADACHI TOMOHIRO , SAKAI KENJI , ISHIBASHI HIROYUKI , SUSA KENZO , NACHIMUSU SENGUTTOBAN , ISHII MITSURU , KOBAYASHI MASAAKI
IPC分类号： G01T1/20 , C09K11/00 , C09K11/63 , C30B29/22 , G01T1/202 , G01T3/06
摘要： PROBLEM TO BE SOLVED: To provide a neutron scintillator not containing heavy metals, that is indispensable for realizing such a scintillation detector, which has low sensitivity to gamma rays but enough counts high-intensity neutrons. SOLUTION: This neutron scintillator is formed by adding copper to an oxide composed of lithium and boron. The oxide composed of the lithium and the boron has a compositional ratio corresponding to Li 2 B 4 O 7 and comprises a transparent single crystal. The copper is contained in an amount of 0.001-0.1 wt.%. Further, a single crystal which is grown in the direction of the axis is cut off perpendicular to the direction of growing of the crystal and the (001) plane of the cut-off crystal is polished, so that the polished single crystal is used as a scintillator plate crystal. COPYRIGHT: (C)2003,JPO

2. 发明专利

JP2003137691A METHOD OF PRODUCING SINGLE CRYSTAL 审中-公开
公开(公告)号：JP2003137691A
公开(公告)日：2003-05-14
申请号：JP2001326513
申请日：2001-10-24
申请人： HITACHI CHEMICAL CO LTD , DAIICHI KIDEN KK
发明人： SUSA KENZO , ISHIBASHI HIROYUKI , NACHIMUSU SENGUTSUTOBAN , ISHII MITSURU
IPC分类号： G01T1/202 , C09K11/08 , C09K11/63 , C30B11/00 , C30B15/00 , C30B15/10 , C30B29/22 , G01T3/06
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a single crystal by which a high quality lithium tetraborate single crystal containing an impurity element added and having high light transmittance is produced. SOLUTION: The method of producing the Li2 Br4 O7 single crystal to which an impurity element is added includes the following processes: a) oxide raw materials having a predetermined composition are mixed and the resulting mixture is heated to a temperature of >=1,000 deg.C so as to melt the mixture in a crucible; b) a raw material for growing the single crystal is produced by pouring the melt into a casting mold and solidifying the melt; and c) the single crystal is formed by crystallizing the raw material for growing the single crystal by a Bridgman method or a Czohralski method.

3. 发明专利

JPH07268645A PRODUCTION OF THREE-DIMENSIONAL COPPER NETWORK STRUCTURE 失效
公开(公告)号：JPH07268645A
公开(公告)日：1995-10-17
申请号：JP6187294
申请日：1994-03-31
申请人： HITACHI CHEMICAL CO LTD
发明人： KAMIGATA YASUO , YOSHIDA TAKESHI , SUSA KENZO , UCHIDA TATSUYA , HIRATSUKA TSUGUHIKO
IPC分类号： B22F3/10 , C22C1/08 , C23C24/08
摘要： PURPOSE:To produce a three-dimensional copper network structure independent of starting material for copper and having high strength, few closed pores and satisfactory gas permeability. CONSTITUTION:Adhesion is imparted to the surface of polyurethane foam, this foam is buried in copper oxide powder and swung to stick the powder to the foam and then the foam is removed by burning. The stuck copper oxide powder is reduced by holding in a reducing atmosphere while circulating gaseous hydrogen and the resultant copper powder is sintered to obtain the objective three-dimensional copper network structure of copper having a shape transferred from that of the polyurethane foam. The porosity of the structure is about 96%. By this simple method by which powder is stuck to a substrate and heat- treated, the three-dimensional copper network structure having high strength, high porosity and a large surface area is obtd.

4. 发明专利

JPH076765A MANUFACTURE OF POROUS CURRENT COLLECTOR FOR BATTERY 失效
公开(公告)号：JPH076765A
公开(公告)日：1995-01-10
申请号：JP2220893
申请日：1993-02-10
申请人： HITACHI CHEMICAL CO LTD , SHIN KOBE ELECTRIC MACHINERY
发明人： KAMIGATA YASUO , YOSHIDA TAKESHI , SUSA KENZO , KOSEKI MITSURU
IPC分类号： C22C1/08 , H01M4/64 , H01M4/80
摘要： PURPOSE:To obtain the manufacture of a highly porous three dimensional mesh collector having a large strength, a large degree of extension and the excellent battery characteristic. CONSTITUTION:Polyurethane foam is dipped in the adhesive solution to obtain the stickiness. This polyurethane foam is placed in carbonyl Ni powder and oscillated to coat the polyurethane foam with the Ni powder. This material is held in the atmosphere at 500 deg.C for 10 minutes to decompose the polyurethane foam for elimination. Next, this material is held in the reduction atmosphere, in which hydrogen gas flows, at 1200 deg.C for 20 minutes to sinter the Ni powder and obtain a three dimensional mesh collector made of Ni and having the shape of a transferred polyurethane foam. This collector at 96% of porosity is coated with the positive electrode active material paste, dried, and pressurized to form a positive electrode plate. In an AA type nickel hydrogen storage battery using this positive plate, lowering of the capacity due to the increase of the discharge current is reduced and the collector has the excellent current collecting function.

5. 发明专利

JPH06259593A INFORMATION IDENTIFIER 失效
公开(公告)号：JPH06259593A
公开(公告)日：1994-09-16
申请号：JP25971692
申请日：1992-09-29
申请人： HITACHI CHEMICAL CO LTD , NEWLONG MACHINE WORKS
发明人： TANAKA MASUMI , TSURUOKA YASUO , YOSHIDA TAKESHI , SUSA KENZO , SUZUKI TOSHITAKA , WATABE MITSURU , IZUMI TSUNEO , SAGAWA TAKASHI
IPC分类号： G06K7/10 , H05B33/02
摘要： PURPOSE:To provide an information reader such as a bar code reader, etc., in which light receiving quantity distribution of a light receiving element can be improved so as to be uniformalized and a reading error can be reduced. CONSTITUTION:A bar code 2 is irradiated with light from the light source 1 of a thin film EL element, and the optical path of reflected light from the bar code 2 is changed by a mirror 3, and it is converged on a lens 4, and is received by the light receiving element 5 such as a charge storage element (CCD), and it is converted to an electrical signal, then, information stored in the bar code is read by a decoder circuit. The thin film EL element is as follows. (1) An EL element whose surface confronting with an information display medium is formed in a curved surface with the center formed in recessed shape. (2) An EL element in which the film thickness of an EL element light emitting layer is thickened at both terminal parts of the element. (3) An EL element whose EL element light emitting surface is widened at both terminal parts of the element. (4) An EL element letting EL element light emitting surface be plural number and in which the total area of the light emitting surface is formed larger than a middle part at both terminal parts of the element. (5) An EL element in which lets the density of light emission center included in the EL element light emitting layer be different values at the middle part and both terminal parts of the element.

6. 发明专利

JPH02272000A METHOD FOR ETCHING GALLIUM-ARSENIC SINGLE CRYSTAL 失效
公开(公告)号：JPH02272000A
公开(公告)日：1990-11-06
申请号：JP9406989
申请日：1989-04-13
申请人： HITACHI CHEMICAL CO LTD
发明人： YOSHIDA MASATO , SHIMIZU ICHIJI , ISHIBASHI HIROYUKI , SUSA KENZO
IPC分类号： C30B29/42 , C30B33/10
摘要： PURPOSE:To uniformly etch the surface of the GaAs single crystal by covering the GaAs single crystal with the powder of a metal oxide, heating the same to form the film of the reaction product of both at the boundary of the single crystal and the oxide, then removing this film. CONSTITUTION:A GaAs single crystal wafer 3 is put into a quartz tube ampoule 1 and the outer periphery of the crystal wafer is coated with the metal oxide powder 2 of Ga2O3, SiO2, Al2O3 or La2O3, etc. The quartz tube ampoule 1 is sealed by a vacuum or an inert gaseous atmosphere of N2, etc., is maintained in the ampoule. A heat treatment to heat the ampoule to 500 to 1000 deg.C and to rapidly cool the same is then executed. The thin film consisting of the reaction product of the GaAs single crystal 3 and the metal oxide is thereby formed on the surface of the single crystal. Such single crystal is taken out of the ampoule 1 and the thin film is removed therefrom, by which the uniform etching of the entire surface of the GaAs single crystal wafer 3 is executed.

7. 发明专利

JPS6465481A RADIATION DETECTOR 失效
公开(公告)号：JPS6465481A
公开(公告)日：1989-03-10
申请号：JP22284087
申请日：1987-09-05
申请人： HITACHI CHEMICAL CO LTD
发明人： KUBOTA SHINZO , ISHIBASHI HIROYUKI , SUSA KENZO , SHIMIZU ICHIJI
IPC分类号： C09K9/00 , C09K11/00 , C09K11/79 , C30B29/34 , G01T1/161 , G01T1/164 , G01T1/20 , G01T1/202
摘要： PURPOSE:To improve space resolving power by using the single crystal of ceri um activated gadolinium silicate which is expressed by Gd2(1-x)Ce2xSiO5 (x is the value from 5X10 to 1X10 ) and in which (x) changes within the single crystal as a scintillator. CONSTITUTION:The single crystal of the cerium activated gadolinium silicate which is Gd2(1-x)Ce2xSiO5 and in which the addition amt. (x) is from 5X10 to 1X10 and (x) changes within the single crystal is used as the scintillator of a radiation detector provided with the scintillator and a photodetector for the purpose of detecting the light emitted from the scintillator. The fluorescent light attenuation time is arbitrarily distributed within the single crystal accord ing to the amt. of Ce to be added in such a manner, by which the space resolv ing power is easily improved.

8. 发明专利

JPS63288920A PRODUCTION OF SILICATE GLASS 失效
公开(公告)号：JPS63288920A
公开(公告)日：1988-11-25
申请号：JP12275287
申请日：1987-05-20
申请人： HITACHI CHEMICAL CO LTD
发明人： YAMANE MASAYUKI , HAYASHI FUSAJI , TAKEI KOICHI , SUSA KENZO
IPC分类号： C01B33/152 , C03B8/02 , C03B19/12 , C03C1/00 , C03C3/06
摘要： PURPOSE:To prevent cracking and crazing when silicate glass is produced by a sol-gel process, by using an org. solvent contg. formamide during hydrolysis to increase the strength of gel, substituting other org. solvent for the formamide, drying and sintering the gel. CONSTITUTION:When silicon alkoxide and metal alkoxide are hydrolyzed to produce mixed sol, an org. solvent contg. formamide is used as a solvent and the produced sol is turned into gel to produce high strength gel. This gel is soaked in a liq. mixture of an org. solvent contg. no formamide, e.g., ethanol with water to substitute the liq. mixture for the formamide in the gel. The gel is then dried and sintered. The occurrence of large stress due to formamide is avoided and silicate glass is produced.

9. 发明专利

JPS61183129A PRODUCTION OF OPTICAL GLASS 失效
公开(公告)号：JPS61183129A
公开(公告)日：1986-08-15
申请号：JP2144785
申请日：1985-02-06
申请人： HITACHI CHEMICAL CO LTD , HITACHI LTD
发明人： IWAI AKIHITO , SUSA KENZO
IPC分类号： C01B33/152 , C03B8/02 , C03C1/00
摘要： PURPOSE:To obtain dry gel having low bulk density without causing cracking or breaking when optical glass is produced by a sol-gel method, by mixing a metallic alkoxide with a solvent whose b.p. is higher than that of water and water. CONSTITUTION:A metallic alkoxide such as Si(OCH3)4 is mixed with a solvent whose b.p. is higher than that of water and water to prepare silica sol, this silica sol is allowed to stand, and the resulting gel is dried to obtain dry gel. Optical glass is produced by sintering the dry gel. By this method, the dry gel having low bulk density is obtd. without causing cracking or breaking, so transparent silica glass is produced without causing cracking or breaking by sintering the dry gel. The solvent whose b.p. is higher than that of water may be 1-C4H9OH, 1-C5H11OH, 1-C6H13OH or C6H5CH3. The solvent may be used in combination with CH3OH or C2H5OH as a conventional solvent.

10. 发明专利

JPH0860136A OPTICAL MATERIAL AND PRODUCTION THEREOF 失效
公开(公告)号：JPH0860136A
公开(公告)日：1996-03-05
申请号：JP19659094
申请日：1994-08-22
申请人： HITACHI CHEMICAL CO LTD
发明人： SUSA KENZO , TAKEI KOICHI
IPC分类号： G02B6/12 , B05D7/24 , C09D183/04 , C09D185/00 , C09K3/00 , G02B6/00
摘要： PURPOSE: To obtain an optical material, comprising a glassy solid, capable of manifesting light transmitting properties within a specific wavelength region, containing a specific chemical bond, having a structure of a weak periodicity, excellent in water and abrasion resistances and processability and useful for waveguide lenses, prisms, etc. CONSTITUTION: This optical material comprises a glassy solid, containing a chemical bond of the formula O-M-R (M is a metal such as Si or Ge; R is an organic group such as CH3 or C2 H5 ) such as a chemical bond of the formula, having a structure of weak periodicity of about 8Å and is capable of manifesting light transmitting properties within a wavelength region of ultraviolet, visible and near infrared regions. This optical material is obtained by drying, e.g. an organometallic alkoxide of the formula Rn-M-(OR')m [M is a metal such as Si or Ge; R' is an alkyl; (m) and (n) are each 1-3] as a main raw material or applying the alkoxide onto a substrate.

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