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    • 1. 发明专利
    • MANUFACTURE OF STRAIN GAGE
    • JPH06302831A
    • 1994-10-28
    • JP8501793
    • 1993-04-13
    • RICOH KK
    • OZAKI MOTOMITAKAHASHI JUNICHI
    • G01L9/04B81C1/00G01L9/00H01L29/84
    • PURPOSE:To provide a manufacturing method of a strain gage in which the degree of freedom of a process is high and whose detection accuracy and stability are good. CONSTITUTION:The surface on a part of one face of a first substrate 18 composed of single-crystal silicon of a p-type or an n-type is doped with low- concentration ions, the p-type is inverted into the n-type or the n-type is inverted into the p-type, and a low-concentration doped layer 19 is formed. Then, a second substrate 21 composed of single-crystal silicon of the same material as that of the first substrate 18 is bonded to a face on the side on which the low-concentration doped layer 19 of the first substrate 18 has been formed, an electrochemical etching operation is performed, regions other than the low- concentration doped layer 19 in the first substrate 18 are removed wholly, and the low-concentration doped layer 19 which has been left on the second substrate 21 by removing the first substrate 18 is used as a strain gage 22.