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1. 发明专利

JP2009010012A Semiconductor light emitting element and manufacturing method thereof, and light emitting device 审中-公开
标题翻译：半导体发光元件及其制造方法及发光装置
公开(公告)号：JP2009010012A
公开(公告)日：2009-01-15
申请号：JP2007167633
申请日：2007-06-26
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： TAKAKURA NOBUYUKI
IPC分类号： H01L33/08 , H01L33/06 , H01L33/32 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To provide an electrode formation stage in which neither a leak nor a short is caused while making good use of advantages of a semiconductor light emitting element having a columnar crystal structure, and which is suitable as a mass-production stage. SOLUTION: The semiconductor light emitting element 10 has the columnar crystal structure 13 having an n-type layer 13a, a light emitting layer 13b, and a p-type layer 13c laminated in order on a substrate 11, and the columnar crystal structure 13 is smaller in diameter atop than nearby the substrate 11, and has an insulating film 14 covering a surface of the columnar crystal structure 13. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供在充分利用具有柱状晶体结构的半导体发光元件的优点的同时既不发生泄漏也不产生短路的电极形成阶段，并且适合作为质量 - 生产阶段解决方案：半导体发光元件10具有在基板11上依次层叠n型层13a，发光层13b和p型层13c的柱状晶体结构13，柱状晶体结构13比衬底11附近的直径小，并且具有覆盖柱状晶体结构13的表面的绝缘膜14.版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2010135859A Method of manufacturing semiconductor light emitting device 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：JP2010135859A
公开(公告)日：2010-06-17
申请号：JP2010060439
申请日：2010-03-17
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： TAKANO TAKAYOSHI , KONDO YUKIHIRO , TAKAKURA NOBUYUKI , YASUDA MASAHARU , IWAHASHI TOMOYA
IPC分类号： H01L33/32
摘要： PROBLEM TO BE SOLVED: To achieve a semiconductor light emitting device consisting of a plurality of nanocolumns, which is high efficient by utilizing the advantage of the nanocolumns of no through transition. SOLUTION: A silicon oxide film 2 is formed on a substrate 1 (Fig.1(a)), and prior to growth of nanocolumns 7, a mask (silicon oxide film pattern 5) having an opening 4 as a portion to be grown is formed (Fig.1(b) to Fig.1(c)). The layers of the nanocolumns 7 are each grown with them covered by the mask (Fig.1(d)), the inside of the opening 4 is grown as single crystal nanocolumns 7. On the mask, the polycrystallin Gan layer 6 is grown and the GaN layer 6 on the mask is removed by etching (Fig.1(e)), and thus, an insulator is filled in a gap between the nanocolumns 7. After that, p-type electrodes (transparent electrodes 8) are continuously formed on the tips of the nanocolumns 7 exposed on the opening 4 in the mask, and n-type electrodes 9 are formed on the substrate 1 (Fig.1(f)). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了实现由多个纳米柱组成的半导体发光器件，其通过利用无过渡的纳米柱的优点而高效。解决方案：在基板1上形成氧化硅膜2（图1（a）），在纳米柱7生长之前，将具有开口4的掩模（氧化硅膜图案5）作为部分（图1（b）至图1（c））。纳米柱7的各层均由掩模覆盖（图1（d））而生长，开口4的内部生长为单晶纳米柱7.在掩模上，生长多晶型甘蓝层6，通过蚀刻去除掩模上的GaN层6（图1（e）），从而将绝缘体填充在纳米柱7之间的间隙中。之后，连续形成p型电极（透明电极8）在掩模上的开口4上露出的纳米柱7的尖端和在基板1上形成n型电极9（图1（f））。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2010135858A Semiconductor light emitting device and lighting device using the same 有权
标题翻译：半导体发光器件和使用其的照明器件
公开(公告)号：JP2010135858A
公开(公告)日：2010-06-17
申请号：JP2010060438
申请日：2010-03-17
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： TAKANO TAKAYOSHI , KONDO YUKIHIRO , TAKAKURA NOBUYUKI , YASUDA MASAHARU , IWAHASHI TOMOYA
IPC分类号： H01L33/32 , H01L33/28
摘要： PROBLEM TO BE SOLVED: To achieve a semiconductor light emitting device consisting of a plurality of nanocolumns, which is high efficient by utilizing the advantage of the nanocolumns of no through transition. SOLUTION: An n-type GaN layer 21, a light-emitting layer 22 and a p-type GaN layer 23 are sequentially laminated on an SiC substrate 20, and in this case, a V/III ratio of an organic metal gas is changed to form nanocolumns 24 each having a spherical tip (Fig. 2(a)). Then, an SOG 25 is rotatably applied (Fig. 2(b)), the SOG is solidified by baking, only the p-type GaN layer 23 is exposed by etching (Fig. 2(c)), a p-type electrode 27 is formed thereon, and an n-type electrode 28 is continuously formed on the backside of the SiC substrate 20 by evaporation (Fig.2(d)). Accordingly, even when the p-type electrode 27 is continuously formed by usual evaporation, the n-type GaN layer 21 and the p-type GaN layer 23 can be prevented from short circuit over the light-emitting layer 22. Further, the light-emitting layer 22b is encapsulated in the each sphere, thereby improving the efficiency of light extraction. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了实现由多个纳米柱组成的半导体发光器件，其通过利用无过渡的纳米柱的优点而高效。解决方案：在SiC衬底20上依次层叠n型GaN层21，发光层22和p型GaN层23，在这种情况下，有机金属的V / III比改变气体以形成具有球形末端的纳米柱24（图2（a））。然后，SOG 25可旋转地施加（图2（b）），SOG通过烘烤而固化，仅通过蚀刻（图2（c））露出p型GaN层23，p型电极 27，并且通过蒸发在SiC衬底20的背面上连续地形成n型电极28（图2（d））。因此，即使当通过蒸发连续地形成p型电极27时，也可以防止n型GaN层21和p型GaN层23在发光层22上发生短路。此外，光封装层22b封装在每个球体中，从而提高光提取的效率。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2010010290A Method and apparatus of manufacturing columnar crystal structure 审中-公开
标题翻译：制造柱状晶体结构的方法和装置
公开(公告)号：JP2010010290A
公开(公告)日：2010-01-14
申请号：JP2008166065
申请日：2008-06-25
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： TAKAKURA NOBUYUKI
IPC分类号： H01L33/32 , C23C14/02 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To form a catalyst material film in a short time when a nanocolumn formed to a GaNLED or the like is finally grown using the catalyst material film. SOLUTION: A catalyst material film 12 is not formed by evaporative deposition and photolithography but directly formed as a thin film in a patterned state by storing a growth substrate 11 in a vacuum container 2, supplying a material gas from a gas supplying source 4, and then, in the atmosphere 7, focusing ion beam 6 to a column diameter of a nanocolumn to emit the ion beam 6 on the growth substrate 11 from a beam source 5. Therefore, after formation of the catalyst material film 12, the growth substrate 11 can be transferred into an MOCVD apparatus or an MBE apparatus or the like without being exposed in an atmosphere to grow the nanocolumn. Accordingly, by taking advantage of a merit of using the catalyst, that is, a merit that a position and a column diameter of the nanocolumn can be controlled, a high quality nanocolumn can be grown with a high throughput at low cost. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：当使用催化剂材料膜最终生长对GaNLED等形成的纳米柱时，在短时间内形成催化剂材料膜。解决方案：催化剂材料膜12不是通过蒸发沉积和光刻而形成的，而是通过将生长衬底11储存在真空容器2中，以直接形成为图案状态的薄膜，从气体供应源如图4所示，然后在气氛7中，聚焦离子束6为柱直径为纳米柱，从束源5在生长基板11上发射离子束6.因此，在形成催化剂材料膜12之后，生长衬底11可以转移到MOCVD装置或MBE装置等中而不暴露在大气中以生长纳米柱。因此，通过利用使用催化剂的优点，即可以控制纳米柱的位置和柱直径的优点，可以以低成本生产高产量的高质量纳米柱。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009152474A Compound semiconductor light emitting device, lighting device using the same, and method of manufacturing the same 有权
标题翻译：化合物半导体发光装置，使用其的照明装置及其制造方法
公开(公告)号：JP2009152474A
公开(公告)日：2009-07-09
申请号：JP2007330583
申请日：2007-12-21
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： TAKAKURA NOBUYUKI
IPC分类号： H01L33/06 , H01L33/10 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/42 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To enable an electrode to be easily formed and improve light derivation efficiency in a compound semiconductor light emitting device yielded by arranging in dispersion a plurality of nanocolumns on a substrate. SOLUTION: A GaN nanocolumn 4 is a laminate of an n-type GaN layer 13, a light-emitting layer 14, and a p-type GaN layer 16. In the GaN nanaocoulumn, an insulating film 3 is formed on side surfaces thereof by anode oxidation, and then a transparent electrode 6 is formed by vapor. Accordingly, for derivation of a p-type electrode, leakage and short circuit are reduced and a simple step only for vaporization enables formation thereof. This ensures very low cost and stable formation and achieves an electrode formation step desired for mass production step. Further, under proper control of the thickness of the transparent electrode 6, it serves as a microlens. Accordingly, total reflection loss at the transparent electrode 6 and atmosphere boundary is suppressed to improve light derivation efficiency. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了使电极容易地形成，并且提高了通过在基板上分散多个纳米柱而产生的化合物半导体发光器件中的光衍生效率。解决方案：GaN纳米柱4是n型GaN层13，发光层14和p型GaN层16的层压体。在GaN纳米结构中，在侧面形成绝缘膜3 其表面通过阳极氧化，然后通过蒸气形成透明电极6。因此，为了导出p型电极，泄漏和短路减少，并且仅用于蒸发的简单步骤能够形成。这确保了非常低的成本和稳定的形成，并且实现了批量生产步骤所需的电极形成步骤。此外，在透明电极6的厚度的适当控制下，其用作微透镜。因此，抑制透明电极6和气氛边界处的全反射损失，提高光的衍射效率。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2009105088A Semiconductor light-emitting device, luminaire using the same, and method of manufacturing semiconductor light-emitting device 审中-公开
标题翻译：半导体发光器件，使用其的发光元件及制造半导体发光器件的方法
公开(公告)号：JP2009105088A
公开(公告)日：2009-05-14
申请号：JP2007272925
申请日：2007-10-19
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： TAKAKURA NOBUYUKI
IPC分类号： F21V7/00 , F21V7/04 , F21Y101/02 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/16 , H01L33/28 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To improve the light extraction efficiency in a nano-column LED.
SOLUTION: An SiO
2 thin film 4 is deposited at 50 nm on an Si substrate 3 using EB deposition, and further, a rodhium (Rh) thin film 6 serving as a reflection member 5 is deposited at 1 μm using EB deposition (Fig.2(a)). After that, a patterned photoresist 7 is formed, the rodhium thin film 6 is taper-etched using the photoresist 7 as a mask and the photoresist 7 is removed, thereby forming the conical trapezoidal reflection member 5 made of rhodium (Fig.2(b)). After that, a nano-column 2 and electrodes 12, 14 and 15 are formed through a usual nano-column forming step. In this method, out of lights radiated from a light-emitting layer 10, a light emitted toward the outer periphery of the disk-like light-emitting layer (quantum disk) 10 can be reflected in the direction of a light extraction surface, and thus, the light extraction efficiency can be improved.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提高纳米柱LED的光提取效率。解决方案：使用EB沉积在SiO衬底3上以50nm沉积SiO 2 薄膜4，此外，用作反射构件5的棒状（Rh）薄膜6是使用EB沉积沉积为1μm（图2（a））。之后，形成图案化的光致抗蚀剂7，使用光致抗蚀剂7作为掩模对棒状薄膜6进行锥蚀刻，并除去光致抗蚀剂7，从而形成由铑制成的圆锥形梯形反射构件5（图2（b ））。之后，通过通常的纳米柱形成步骤形成纳米柱2和电极12,14和15。在该方法中，从发光层10射出的光中，向盘状发光层（量子盘）10的外周方向射出的光能够在光提取面的方向上反射，因此，可以提高光提取效率。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009049195A Semiconductor light emitting element and light emitting device 审中-公开
标题翻译：半导体发光元件和发光器件
公开(公告)号：JP2009049195A
公开(公告)日：2009-03-05
申请号：JP2007213913
申请日：2007-08-20
申请人： Panasonic Electric Works Co Ltd , パナソニック電工株式会社
发明人： TAKAKURA NOBUYUKI
IPC分类号： H01L33/06 , H01L33/10 , H01L33/32 , H01L33/34 , H01L33/40 , H01L33/60 , H01L33/62
摘要： PROBLEM TO BE SOLVED: To improve internal quantum effect by decreasing series resistance and increasing the carrier density of a light emission layer. SOLUTION: A semiconductor light emitting element has a plurality of nonocolumns 13 each formed by stacking an n-type layer 14, a light emission layer 15, and a p-type layer 16 in order on a substrate 11. The nanocolumns 13 are each such that an n-type layer 14 decreases in diameter with the distance from the substrate 11, a light emission layer 15 has a minimum diameter, and a p-type layer 16 increases in diameter with the distance from the substrate 11. COPYRIGHT: (C)2009,JPO&INPIT

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