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1. 发明专利

JP2011124445A Semiconductor optical element and method of manufacturing semiconductor optical element 有权
标题翻译：半导体光学元件和制造半导体光学元件的方法
公开(公告)号：JP2011124445A
公开(公告)日：2011-06-23
申请号：JP2009282011
申请日：2009-12-11
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： YAMAUCHI TOSHIYA , WASHIMI SEIJI , IGARASHI JUN , SAKUMA YASUSHI , HAYAKAWA SHIGENORI
IPC分类号： H01S5/227 , H01S5/026 , H01S5/12 , H01S5/16
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical element capable of easily making reflected light less than before, and to provide a method of manufacturing semiconductor optical element.
SOLUTION: The semiconductor optical element 1 includes an optical waveguide portion 16 composed of a crystal layer. At the optical waveguide 16, a tapered tip portion 16a is formed. At the tip portion 16a of the optical waveguide 16, an end surface 16b where light is emitted is formed along a direction different from a direction along the crystal plane orientation of the crystal layer.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够容易地使反射光比以前更少的半导体光学元件，并提供半导体光学元件的制造方法。解决方案：半导体光学元件1包括由晶体层构成的光波导部分16。在光波导16处形成锥形尖端部分16a。在光波导16的尖端部分16a处，沿着与晶体层的晶面定向的方向不同的方向形成发光的端面16b。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2010123643A Semiconductor array element, laser module, optical transmitting module, and optical transmitting apparatus 审中-公开
标题翻译：半导体阵列元件，激光模块，光学发射模块和光传输装置
公开(公告)号：JP2010123643A
公开(公告)日：2010-06-03
申请号：JP2008294056
申请日：2008-11-18
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： YAMAUCHI TOSHIYA , NAOE KAZUHIKO , SASADA NORIKO , WASHIMI SEIJI
IPC分类号： H01S5/026 , H01S5/024 , H01S5/40
摘要： PROBLEM TO BE SOLVED: To align each element to generate highly accurate oscillating wavelength under temperature control by only a Peltier element.
SOLUTION: As a small-sized device for conducting high-speed modulation, a monolithic integrated array is formed using a laser part 107 generating four different wavelengths and an EA modulator part 108. Difference in oscillating wavelengths among four elements is controlled in higher accuracy by manufacturing together four elements having the diffraction grating and mesa width as the structure for determining the oscillating wavelength in each element.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：仅通过珀尔帖元件在温度控制下对准每个元件以产生高精度的振荡波长。解决方案：作为用于进行高速调制的小型器件，使用产生四个不同波长的激光器部分107和EA调制器部分108形成单片集成阵列。四个元件之间的振荡波长的差异被控制在通过将具有衍射光栅和台面宽度的四个元件一起制造为用于确定每个元件中的振荡波长的结构来获得更高的精度。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2012019053A Semiconductor optical element, optical transmission module, optical transmission and reception module, and optical transmission apparatus 有权
标题翻译：半导体光学元件，光学传输模块，光学传输和接收模块以及光传输设备
公开(公告)号：JP2012019053A
公开(公告)日：2012-01-26
申请号：JP2010155186
申请日：2010-07-07
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： WASHIMI SEIJI , HAYAKAWA SHIGENORI , OKAMOTO KAORU , YAMAUCHI TOSHIYA , SAKUMA YASUSHI
IPC分类号： H01S5/026 , H01S5/227
CPC分类号： G02F1/017 , B82Y20/00
摘要： PROBLEM TO BE SOLVED: To provide: a semiconductor optical element that further improves the characteristics by a structure of reducing a parasitic capacitance in a semiconductor optical element having an embedded heterostructure; an optical transmission module; an optical transmission and reception module; and an optical transmission apparatus.SOLUTION: A semiconductor optical element includes a modulator for modulating light incident along an emitting direction and emitting the light. The modulator includes a mesa stripe structure, containing an active layer, which is elongated along the emitting direction and an embedded layer which is arranged next to both sides of the mesa stripe structure. The distance between a lower surface of the embedded layer and a lower surface of the active layer is 20% or more of the distance between the lower surface and an upper surface of the embedded layer.
摘要翻译：解决的问题：提供：通过减少具有嵌入异质结构的半导体光学元件中的寄生电容的结构进一步提高特性的半导体光学元件; 光传输模块; 光传输和接收模块; 和光传输装置。解决方案：半导体光学元件包括用于调制沿着发射方向入射的光并发射光的调制器。调制器包括台面条状结构，其包含沿发射方向延伸的有源层和邻近台面条状结构的两侧布置的嵌入层。嵌入层的下表面与有源层的下表面之间的距离为嵌入层的下表面和上表面之间的距离的20％以上。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2011103418A Chip carrier and optical communication module 有权
标题翻译：芯片载体和光通信模块
公开(公告)号：JP2011103418A
公开(公告)日：2011-05-26
申请号：JP2009258549
申请日：2009-11-12
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： NAKAMURA ATSUSHI , YAMAUCHI TOSHIYA
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To reduce an electric crosstalk between wires connected to each of an optical modulator and a semiconductor laser.
SOLUTION: A chip carrier 10 includes: a semiconductor laser unit 12 for emitting laser beams according to a drive current to be input; an optical modulator unit 14 for modulating the laser beams emitted by the semiconductor laser unit 12 according to a modulation signal to be input; a first wire 30 transmitting the drive current to the semiconductor laser unit 12; and a second wire 34 transmitting the modulation signal to the optical modulator unit 14. In the chip carrier, a smaller angle is not less than 60 degrees with respect to angles formed by crossing of directions of respective wires prescribed by positions of respective connection edges of the first and second wires 30, 34.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：减少连接到每个光调制器和半导体激光器的电线之间的电串扰。解决方案：芯片载体10包括：半导体激光器单元12，用于根据要输入的驱动电流发射激光束; 光调制器单元14，用于根据要输入的调制信号调制由半导体激光单元12发射的激光束; 将驱动电流传送到半导体激光器单元12的第一线30; 以及将调制信号发送到光调制器单元14的第二线34.在芯片载体中，相对于通过将由各个连接边缘的位置规定的各个线的方向交叉而形成的角度，较小的角度不小于60度第一和第二线30,34。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2011009456A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2011009456A
公开(公告)日：2011-01-13
申请号：JP2009151332
申请日：2009-06-25
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： SAKUMA YASUSHI , HAYAKAWA SHIGENORI , WASHIMI SEIJI , YAMAUCHI TOSHIYA , ONO SATOSHI
IPC分类号： H01S5/223 , H01S5/042 , H01S5/227 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure such that a polyimide resin is arranged below a pad electrode to reduce a parasitic capacitance, thereby solving the following problem that an electrode step disappears in a step difference of a polyimide surface, and it becomes hard to reduce the parasitic capacitance through the increase of the step difference.SOLUTION: In a semiconductor optical device, a compound semiconductor layer is laminated which includes an etching stop layer 32 and an active layer 36 and is laminated on a semiconductor substrate 2. A ridge 20 and a lower part 42 on both sides of the ridge are formed by etching to the active layer 36. A part positioned under the pad electrode 14 among the lower parts 42 is etched to the etching stop layer 32, thereby forming a recess 46. The polyimide resin layer 22 has, below the pad electrode 14, a thickness formed by the depth of the lower part 42, the height of a terrace part 48 and the depth of the recess 46. The parasitic capacitance is reduced by increasing the depth of the recess 46.
摘要翻译：要解决的问题：提供一种半导体器件，其结构使得聚酰亚胺树脂布置在焊盘电极下方以减小寄生电容，从而解决了电极步骤在聚酰亚胺表面的阶差中消失的以下问题，以及通过增加阶梯差，难以减小寄生电容。解决方案：在半导体光学器件中，层叠化合物半导体层，其包括蚀刻停止层32和有源层36，并层叠在半导体基板2上通过蚀刻到有源层36上形成脊的两侧的脊部20和下部42。将位于下部部分42内的焊盘电极14下方的部分蚀刻到蚀刻停止层32，从而形成凹部46.聚酰亚胺树脂层22在焊盘电极14的下方具有由下部42的深度，露台部48的高度和深度构成的厚度 e凹槽46.通过增加凹部46的深度来减小寄生电容。

6. 发明专利

JP2010114158A Process of fabricating electroabsorption optical modulator integrated laser device 审中-公开
标题翻译：制造电子光学调制器集成激光器件的工艺
公开(公告)号：JP2010114158A
公开(公告)日：2010-05-20
申请号：JP2008283578
申请日：2008-11-04
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： WASHIMI SEIJI , NAOE KAZUHIKO , YAMAUCHI TOSHIYA , OKAMOTO KAORU , SAKUMA YASUSHI , HAYAKAWA SHIGENORI
IPC分类号： H01S5/026 , G02F1/017
摘要： PROBLEM TO BE SOLVED: To provide the process of fabricating an electroabsorption modulator integrated laser device which is able to attain predetermined long-haul transmission, in a predetermined high speed operation, by fabricating an electroabsorption modulator where undoped layers each having a thickness value that satisfies the conditions for the thickness value of undoped layers where each satisfying a predetermined transmission quality are laminated.
SOLUTION: By having a plurality of electroabsorption modulators each having an undoped layer of different thickness fabricated, the band and the chirp characteristics are measured, and then the correlation diagram of these characteristics and the thickness of undoped layer is created, the dependence of these characteristics on the thickness is determined, and the conditions of thickness value are obtained.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供制造能够在预定的高速运行中达到预定的长距离传输的电吸收调制器集成激光装置的方法，通过制造电吸收调制器，其中各层具有厚度的未掺杂层满足预定传输质量的未掺杂层的厚度值的条件的值。解决方案：通过制备多个具有不同厚度的未掺杂层的电吸收调制器，测量带和啁啾特性，然后产生这些特性和未掺杂层的厚度的相关图，依赖性确定这些特性的厚度，并获得厚度值的条件。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009222965A Electric field absorption type modulator 有权
标题翻译：电场吸收型调制器
公开(公告)号：JP2009222965A
公开(公告)日：2009-10-01
申请号：JP2008067074
申请日：2008-03-17
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： WASHIMI SEIJI , NAOE KAZUHIKO , SASADA NORIKO , YAMAGUCHI YORIYOSHI , YAMAUCHI TOSHIYA
IPC分类号： G02F1/025
摘要： PROBLEM TO BE SOLVED: To provide an electric field absorption type modulator (EA modulator), having high heat radiation and an superior frequency characteristics.
SOLUTION: This EA modulator 10 includes an optical waveguide layer 32, of which the optical absorption amount varies in response to applied electric field, and a p-side electrode 40 for applying the electric field to the optical waveguide layer 32. The p-side electrode 40 has a mesa part 42 which extends along the path of a light input into an input end 32a of the optical waveguide layer 32 and output from an output end 32b thereof; a PAD part 44 connected with an electrical signal line, and a band-like PAD connection part 46 for connecting the PAD part 44 to a partial area in an input end 32a side of the mesa part 42.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有高热辐射和优异的频率特性的电场吸收型调制器（EA调制器）。解决方案：该EA调制器10包括光吸收量响应于所施加的电场而变化的光波导层32和用于向光波导层32施加电场的p侧电极40。 p侧电极40具有台阶部42，其沿着光输入的路径延伸到光波导层32的输入端32a，并从其输出端32b输出; 与电信号线连接的PAD部分44，以及用于将PAD部分44连接到台面部分42的输入端32a侧的部分区域的带状PAD连接部分46.权利要求（C） 2010年，JPO＆INPIT

8. 发明专利

JP2012109628A ELECTRICAL FIELD ABSORPTION TYPE OPTICAL MODULATOR INTEGRATED LASER DEVICE 审中-公开
公开(公告)号：JP2012109628A
公开(公告)日：2012-06-07
申请号：JP2012054083
申请日：2012-03-12
申请人： OPNEXT JAPAN INC
发明人： WASHIMI SEIJI , NAOE KAZUHIKO , YAMAUCHI TOSHIYA , OKAMOTO KAORU , SAKUMA YASUSHI , HAYAKAWA SHIGENORI
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an electrical field absorption type modulator integrated laser device which is able to attain predetermined long distance transmission, in predetermined high speed operation, by fabricating the electrical field absorption type modulator where undoped layers having a layer thickness value that satisfies conditions for the layer thickness value of undoped layers where each satisfying a predetermined transmission quality are laminated.SOLUTION: A plurality of electrical field absorption type modulators each having an undoped layer of different layer thickness from one another are fabricated, a band and chirp characteristics are measured, and then a correlation diagram of these characteristics and the layer thickness of the undoped layer is created. Thereby, dependence on the layer thickness of these characteristics is determined, and conditions of a layer thickness value are obtained.

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