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1. 发明专利

JP2012019053A Semiconductor optical element, optical transmission module, optical transmission and reception module, and optical transmission apparatus 有权
标题翻译：半导体光学元件，光学传输模块，光学传输和接收模块以及光传输设备
公开(公告)号：JP2012019053A
公开(公告)日：2012-01-26
申请号：JP2010155186
申请日：2010-07-07
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： WASHIMI SEIJI , HAYAKAWA SHIGENORI , OKAMOTO KAORU , YAMAUCHI TOSHIYA , SAKUMA YASUSHI
IPC分类号： H01S5/026 , H01S5/227
CPC分类号： G02F1/017 , B82Y20/00
摘要： PROBLEM TO BE SOLVED: To provide: a semiconductor optical element that further improves the characteristics by a structure of reducing a parasitic capacitance in a semiconductor optical element having an embedded heterostructure; an optical transmission module; an optical transmission and reception module; and an optical transmission apparatus.SOLUTION: A semiconductor optical element includes a modulator for modulating light incident along an emitting direction and emitting the light. The modulator includes a mesa stripe structure, containing an active layer, which is elongated along the emitting direction and an embedded layer which is arranged next to both sides of the mesa stripe structure. The distance between a lower surface of the embedded layer and a lower surface of the active layer is 20% or more of the distance between the lower surface and an upper surface of the embedded layer.
摘要翻译：解决的问题：提供：通过减少具有嵌入异质结构的半导体光学元件中的寄生电容的结构进一步提高特性的半导体光学元件; 光传输模块; 光传输和接收模块; 和光传输装置。解决方案：半导体光学元件包括用于调制沿着发射方向入射的光并发射光的调制器。调制器包括台面条状结构，其包含沿发射方向延伸的有源层和邻近台面条状结构的两侧布置的嵌入层。嵌入层的下表面与有源层的下表面之间的距离为嵌入层的下表面和上表面之间的距离的20％以上。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2010278406A Avalanche photodiode, and light receiving module using the same avalanche photodiode 审中-公开
标题翻译： AVALANCHE光电和使用相同AVALANCHE光电的光接收模块
公开(公告)号：JP2010278406A
公开(公告)日：2010-12-09
申请号：JP2009132550
申请日：2009-06-01
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： TOYONAKA TAKASHI , DOMEN MEGUMI , HAMADA HIROSHI , KOMATSU KAZUHIRO , SAKUMA YASUSHI , TANAKA SHIGEHISA
IPC分类号： H01L31/107
摘要： PROBLEM TO BE SOLVED: To provide an avalanche photodiode which has a light absorbing layer where electrons generated in its light absorbing layer are suppressed from being accumulated in an interface between the light absorbing layer and an electric-field adjusting layer, and its light-signal intensity which causes element breakage can be increased even if it is in a state that a multiplying factor is low, and to provide a light receiving module using the avalanche photodiode. SOLUTION: An energy level at a conduction-band end in at least one of an electric field adjusting layer in a laminating direction is higher than an energy level of the conduction-band end in the light absorbing layer, and is lower than an energy level of the conduction-band end of the multiplying layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种雪崩光电二极管，其具有光吸收层的光吸收层，其中在其光吸收层中产生的电子被抑制积聚在光吸收层和电场调节层之间的界面中，并且其导致元件破损的光信号强度即使处于倍增因子低的状态也能够增加，并且提供使用雪崩光电二极管的光接收模块。解决方案：在层叠方向上的电场调节层中的至少一个中的导带端的能级高于光吸收层中的导带端的能级，并且低于倍增层的导带端的能级。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2009138224A Plating method and electronic device 审中-公开
标题翻译：电镀方法和电子设备
公开(公告)号：JP2009138224A
公开(公告)日：2009-06-25
申请号：JP2007314953
申请日：2007-12-05
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： NAKAI DAISUKE , WASHINO TAKASHI , SAKUMA YASUSHI , KOMATSU KAZUHIRO
IPC分类号： C25D5/02 , G03F7/26 , G03F7/40 , H01L21/288 , H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a plating method which allows formation of metal plating hardly causing crystal fracture or exfoliation of the plating; and to provide an electronic device having such metal plating.
SOLUTION: The plating method includes a process for forming a resist pattern 16 in which an opening 16a is formed and the inner peripheral surface of the opening 16a protrudes more largely to the opening side as it approaches to the surface side from the rear surface side and a process for forming metal plating 18 for filling the opening formed in the resist pattern.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供允许形成金属电镀的电镀方法几乎不引起电镀的晶体断裂或剥离; 并提供具有这种金属电镀的电子设备。解决方案：电镀方法包括形成抗蚀剂图案16的工艺，其中形成有开口16a，并且当开口16a的内周表面从后方接近表面侧时，开口侧的内周面更大程度地突出到开口侧表面侧和形成用于填充形成在抗蚀剂图案中的开口的金属电镀18的工艺。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007158067A Semiconductor element and manufacturing method thereof, and semiconductor laser and manufacturing method thereof 审中-公开
标题翻译：半导体元件及其制造方法及其半导体激光器及其制造方法
公开(公告)号：JP2007158067A
公开(公告)日：2007-06-21
申请号：JP2005351834
申请日：2005-12-06
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： WASHINO TAKASHI , KIKAWA TAKESHI , SAKUMA YASUSHI , OKAMOTO KAORU
IPC分类号： H01S5/042 , H01L21/60
CPC分类号： H01S5/028 , H01L24/02 , H01L33/16 , H01L2224/04042 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01033 , H01L2924/01079 , H01L2924/014 , H01S5/0281 , H01S5/0283 , H01S5/0425 , H01S5/2027
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing technology capable of preventing electrode exfoliation caused in the case of die bonding or wire bonding.
SOLUTION: A semiconductor element including an electrode on the front side or rear side of a semiconductor substrate is structured to insert an amorphous silicon layer 106 with no hydrogen added thereto between the electrode 107 and the semiconductor substrate 101. Further, an amorphous silicon layer 104 is inserted to a boundary between the electrode 105 and an insulation film 103, and a boundary between the insulation film and the semiconductor substrate. The technology can similarly be applied even to semiconductor lasers each having an insulation film acting like a reflection film to a light stimulation face side, and an insulation film acting like a multilayer reflection film side at a non stimulation face side.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止在芯片接合或引线接合的情况下引起的电极剥离的半导体制造技术。解决方案：包括在半导体衬底的前侧或后侧上的电极的半导体元件被构造成在电极107和半导体衬底101之间插入不加氢的非晶硅层106。硅层104被插入到电极105和绝缘膜103之间的边界以及绝缘膜和半导体衬底之间的边界。该技术可以类似地应用于半导体激光器，每个半导体激光器具有像光反射膜一样作用于光刺激面侧的绝缘膜，以及在非刺激面侧像多层反射膜一侧的绝缘膜。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006351818A SEMICONDUCTOR OPTICAL DEVICE AND METHOD OF MANUFACTURING SAME 审中-公开
公开(公告)号：JP2006351818A
公开(公告)日：2006-12-28
申请号：JP2005175923
申请日：2005-06-16
申请人： OPNEXT JAPAN INC
发明人： MOTODA KATSUYA , SAKUMA YASUSHI , WASHINO TAKASHI , OKAMOTO KAORU
IPC分类号： H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide a method of stably manufacturing a semiconductor optical element by preventing dropping of electrode coverage. SOLUTION: A mesa stripe structure is separated from a ridged optical waveguide and is so arranged at the lower part of the region forming an electrode pad as to be embedded by a part of it, between the ridged optical waveguide and a thick film region of organic resin forming the electrode pad. The organic resin embedded part beside the ridged optical waveguide is separated, and a thick film pattern is formed by being deviated by several μm from the separated organic resin embedded part. With this configuration, a sufficient etching selection ratio is obtained by using the insulating film of an underlayer as an etching stop layer, compared to a conventional method of stopping etching within the organic resin. Thus, a stable manufacture yield and reliable element are provided for electrode coverage. COPYRIGHT: (C)2007,JPO&INPIT

6. 发明专利

JP2006173265A Semiconductor laser and its manufacturing method 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：JP2006173265A
公开(公告)日：2006-06-29
申请号：JP2004361731
申请日：2004-12-14
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： WASHINO TAKASHI , MUKAIKUBO MASARU , SAKUMA YASUSHI , MOTODA KATSUYA
IPC分类号： H01S5/028
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser efficiently dissipating a heat generated in a ridgy waveguide to the outside, increasing an upper-limit temperature capable of ensuring the basic characteristics and reliability of an element, and enabling a stable operation under a high-temperature state in an insulating film coating the surface of the semiconductor laser such as the ridgy waveguide and a manufacturing method for the semiconductor laser.
SOLUTION: In the semiconductor laser, insulating films containing Al and having excellent heat-dissipating properties are used as the insulating films 103 coating a surface and the side faces of the ridgy waveguides, and the insulating films 103 are further formed in surface shapes having irregularities vertically or in parallel or in a latticed shape to the ridgy waveguides. The ridgy waveguides are formed, and the surface of the semiconductor laser is coated with the insulating films using Al having a thermal conductivity higher than Si as a main material. A surface area is further increased in a groove shape and the latticed shape by working the surfaces of the insulating films using formed Al as the main material, and heat-dissipating properties are improved.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供半导体激光器有效地将外部波导中产生的热量散发到外部，增加能够确保元件的基本特性和可靠性的上限温度，并且能够在在覆盖半导体激光器的表面的绝缘膜中的高温状态，例如轮状波导和半导体激光器的制造方法。解决方案：在半导体激光器中，使用包含Al并且具有优异的散热性能的绝缘膜作为涂覆表面的轮廓波导的表面和侧面的绝缘膜103，并且绝缘膜103进一步形成在表面具有垂直或平行或格状形状的凹凸波纹的形状的形状。形成齿轮波导，并且使用导热率高于Si的Al作为主要材料，用绝缘膜涂覆半导体激光器的表面。通过使用形成的Al作为主要材料来工作绝缘膜的表面，使沟槽形状和网格形状进一步增加，并且散热性能得到改善。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005322663A Polishing method and polishing jig of semiconductor substrate 审中-公开
标题翻译：半导体基板的抛光方法和抛光加工
公开(公告)号：JP2005322663A
公开(公告)日：2005-11-17
申请号：JP2004137067
申请日：2004-05-06
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： WASHINO TAKASHI , SAKUMA YASUSHI , MUKAIKUBO MASARU , HARPREET SINGH HURA , UCHIDA KENJI
IPC分类号： B24B5/00 , B24B29/02 , B24B37/30 , H01L21/302 , H01L21/304 , H01L21/32 , H01L21/461 , H01L21/68 , B24B37/04
CPC分类号： B24B37/30
摘要： PROBLEM TO BE SOLVED: To solve the problem, wherein the polishing operation of a semiconductor substrate, the semiconductor substrate made thin and reduced in strength by polishing is damaged by polishing quartz and suffers from peripheral damages and generation of cracks. SOLUTION: A jig for fixing the semiconductor substrate which is formed with a groove, having nearly the same diameter as that of the semiconductor substrate is applied to the surface, whereon the semiconductor substrate is to be fixed. By application of this jig, damages and cracks to the semiconductor substrate can be suppressed. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题为了解决半导体衬底的研磨操作，通过抛光制造的薄而且强度降低的半导体衬底被抛光石英损坏并且遭受周边损坏和产生裂纹的问题。解决方案：将固定半导体衬底的半导体衬底固定在其上的用于固定半导体衬底的夹具，其形成有与半导体衬底的直径几乎相同直径的凹槽。通过施加该夹具，可以抑制对半导体基板的损伤和破裂。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005175382A Semiconductor optical component and manufacturing method thereof 有权
标题翻译：半导体光学元件及其制造方法
公开(公告)号：JP2005175382A
公开(公告)日：2005-06-30
申请号：JP2003416717
申请日：2003-12-15
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： SAKUMA YASUSHI , MOTODA KATSUYA , WASHINO TAKASHI
IPC分类号： H01L21/60 , H01S5/042
CPC分类号： H01L24/03 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/0103 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical component which is characterized in that adhesiveness between an organic material and a pad electrode is high, and that an electrode is not peeled, and to provide its manufacturing method.
SOLUTION: In the semiconductor optical component of ridge waveguide type semiconductor laser, when a pad electrode 502 is formed on a polyimide resin 201 which is an organic material, a needlelike projection 501 is formed on the surface of the polyimide resin 201 by dry etching using oxygen/argon mixed gas. It is important for a dry etching condition, which can form the needlelike projection 501 on the polyimide resin 201, not to use fluorine system gas for a reactant gas of a dry etching system, and to make a ratio of argon gas flowing rate with respect to that of oxygen gas be 20% or less. This can improve both the adhesiveness by increasing contact ares between the polyimide resin 201 and the pad electrode 502, and realize high quality semiconductor optical component having sufficient wire pull strength.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体光学部件，其特征在于有机材料和焊盘电极之间的粘附性高，并且电极不被剥离，并提供其制造方法。解决方案：在脊波导型半导体激光器的半导体光学部件中，当在作为有机材料的聚酰亚胺树脂201上形成焊盘电极502时，通过在聚酰亚胺树脂201的表面上形成针状突起501 使用氧气/氩气混合气体进行干蚀刻。对于可以在聚酰亚胺树脂201上形成针状突起501的干蚀刻条件，对于干蚀刻系统的反应气体不使用氟系气体，并且使氩气流动速率与与氧气的比例为20％以下。这可以通过增加聚酰亚胺树脂201和焊盘电极502之间的接触面来提高粘合性，并且实现具有足够的线拉强度的高质量半导体光学部件。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2012124361A Manufacturing method of semiconductor optical element and semiconductor optical element 审中-公开
标题翻译：半导体光学元件和半导体光学元件的制造方法
公开(公告)号：JP2012124361A
公开(公告)日：2012-06-28
申请号：JP2010274498
申请日：2010-12-09
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： SAKUMA YASUSHI , HAYAKAWA SHIGENORI , NAKAMURA ATSUSHI , WASHINO TAKASHI
IPC分类号： H01S5/22
摘要： PROBLEM TO BE SOLVED: To suppress a leak current from occurring when a separation groove provided to electrically separate a waveguide part included in a semiconductor optical element of PBH structure is not formed appropriately.SOLUTION: A manufacturing method of a semiconductor optical element comprises: a step of forming a mesa stripe-shaped active layer 12 on an n-type InP substrate 10; a step of forming an Ru-InP layer 14 up to a higher position than the active layer 12 on both sides of the active layer 12; a step of forming a silicon oxide film 18 in a separation groove formation region 20 provided on a surface of the Ru-InP layer 14; and a step of forming a P-InP layer 16 by crystal growth on the Ru-InP layer 14 on which the silicon oxide film 18 was formed.
摘要翻译：要解决的问题：为了防止当不能适当地形成用于电气分离包含在PBH结构的半导体光学元件中的波导部分的分隔槽时发生泄漏电流的问题。解决方案：半导体光学元件的制造方法包括：在n型InP衬底10上形成台面条状有源层12的步骤; 形成Ru-InP层14直到有源层12两侧的有源层12更高的位置的步骤; 在设置在Ru-InP层14的表面上的分离槽形成区域20中形成氧化硅膜18的步骤; 以及在形成有氧化硅膜18的Ru-InP层14上通过晶体生长形成P-InP层16的工序。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011124445A Semiconductor optical element and method of manufacturing semiconductor optical element 有权
标题翻译：半导体光学元件和制造半导体光学元件的方法
公开(公告)号：JP2011124445A
公开(公告)日：2011-06-23
申请号：JP2009282011
申请日：2009-12-11
申请人： Opnext Japan Inc , 日本オプネクスト株式会社
发明人： YAMAUCHI TOSHIYA , WASHIMI SEIJI , IGARASHI JUN , SAKUMA YASUSHI , HAYAKAWA SHIGENORI
IPC分类号： H01S5/227 , H01S5/026 , H01S5/12 , H01S5/16
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical element capable of easily making reflected light less than before, and to provide a method of manufacturing semiconductor optical element.
SOLUTION: The semiconductor optical element 1 includes an optical waveguide portion 16 composed of a crystal layer. At the optical waveguide 16, a tapered tip portion 16a is formed. At the tip portion 16a of the optical waveguide 16, an end surface 16b where light is emitted is formed along a direction different from a direction along the crystal plane orientation of the crystal layer.
COPYRIGHT: (C)2011,JPO&INPIT

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