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1. 发明专利

JP2008164632A Temperature compensating method, temperature compensating circuit using same, sensor, and water heater 审中-公开
标题翻译：温度补偿方法，使用温度补偿电路，传感器和水加热器
公开(公告)号：JP2008164632A
公开(公告)日：2008-07-17
申请号：JP2008057662
申请日：2008-03-07
申请人： Omron Corp , Tokyo Gas Co Ltd , オムロン株式会社 , 東京瓦斯株式会社
发明人： NAKAMURA KENICHI , KONDA NORIHIRO , KONDO MASATO , SHIGEOKA TAKUJI , EDA AKITO , NOZOE SATOSHI , BINGO HIDEYUKI , KINOSHITA MASAHIRO , SASAKI AKIRA
IPC分类号： G01F1/696 , G01F15/02 , G01P5/12
摘要： PROBLEM TO BE SOLVED: To make an appropriate temperature compensation even when the ambient temperature of a thermosensitive element and the ambient temperature of processing means (processing circuit) that performs a process for a temperature compensation of the thermosensitive element change independently of each other. SOLUTION: While making a temperature compensation of a thermosensitive element 1 in accordance with information on the temperature of a detection target, a temperature compensating method also makes a temperature compensation of processing means in accordance with information on the temperature thereof, the processing means performing a process for a temperature compensation of the thermosensitive element 1 and performing desired detection on the detection target, (the processing means including a differential amplifier 7, for example). The processing means preferably has thermosensitive elements R9 and R2 for adjusting the offset and/or gain of the processing means. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：即使当热敏元件的环境温度和执行用于热敏元件的温度补偿的处理的处理装置（处理电路）的环境温度独立于每一个而变化时也进行适当的温度补偿其他。解决方案：在根据关于检测对象的温度的信息进行热敏元件1的温度补偿的同时，温度补偿方法还根据关于其温度的信息对处理装置进行温度补偿，处理意味着执行用于热敏元件1的温度补偿的处理并且对检测对象进行期望的检测（例如，包括差分放大器7的处理装置）。处理装置优选地具有用于调节处理装置的偏移和/或增益的热敏元件R9和R2。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2006078487A Guide path 有权
标题翻译：指导途径
公开(公告)号：JP2006078487A
公开(公告)日：2006-03-23
申请号：JP2005259192
申请日：2005-09-07
申请人： Omron Corp , Tokyo Gas Co Ltd , オムロン株式会社 , 東京瓦斯株式会社
发明人： NAKAMURA KENICHI , KONDA NORIHIRO , NOZOE SATOSHI , SASAKI AKIRA , KONDO MASATO , SHIGEOKA TAKUJI , EDA AKITO
IPC分类号： G01F1/00 , F23L1/00 , F23N5/18 , G01F1/684 , G01F15/12
摘要： PROBLEM TO BE SOLVED: To provide a guide path that eliminates pulsation in a sensor output even in a high flow rate region, while guiding a gas of an object to be measured to a sensor in a condition that waste materials such as dust and dirt are properly removed. SOLUTION: The guide path comprises narrow paths 31-35 for raising the flow speed of a gas and deposition chambers 21-25 forming hollow rectangular solids for depositing the waste materials in the gas. The outlets of the narrow paths 31-35 are opened by pulling either side of right and left sides of one side wall surface of the deposition chambers 21-25, and the gas outlets from the deposition chambers 21-25 are opened to side wall surfaces of far sides from the outlets of the narrow paths 31-35 from among side wall surfaces vertical to one side wall surface to which the outlets of the narrow paths 31-35 are opened, and therewith the opening position is set at a position sufficiently separated from a side wall surface facing one side wall surface forward than it. Thereby, the gas changes a flow direction thereof at an angle larger than 90 degrees from flowing in to flowing out and passes widely in the deposition chambers 21-25, and then a deposition place is spread and the deposition chambers 21-25 are efficiently utilized. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供即使在高流量区域也能够消除传感器输出中的脉动的引导路径，同时在诸如灰尘等废物的条件下将被测量物体的气体引导到传感器并正确清除污垢。解决方案：引导路径包括用于提高气体流速的窄通道31-35和形成中空矩形固体的沉积室21-25，用于将废料沉积在气体中。通过拉出沉积室21-25的一个侧壁表面的左右侧的任一侧来打开狭窄通道31-35的出口，并且来自沉积室21-25的气体出口被打开到侧壁表面从狭窄路径31-35的出口的远侧与垂直于窄路径31-35的出口的一个侧壁表面的侧壁表面中的开口位置被设置在足够分离的位置处从面向一侧壁表面的侧壁表面向前。由此，气体的流动方向以大于90度的角度流动而流出，并且在沉积室21-25中被广泛地流通，然后扩散沉积位置并且有效地利用沉积室21-25 。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2004092985A Exhaust gas treatment apparatus 审中-公开
公开(公告)号：JP2004092985A
公开(公告)日：2004-03-25
申请号：JP2002253739
申请日：2002-08-30
申请人： Koike Sanso Kogyo Co Ltd , Tokyo Gas Chemicals Co Ltd , Tokyo Gas Co Ltd , 小池酸素工業株式会社 , 東京ガスケミカル株式会社 , 東京瓦斯株式会社
发明人： KOIKE YASUO , BOKU HEISHO , KIN HEITETSU , NAKAMURA KENICHI , SUGIHARA KENICHI , SEO ATSUKO
IPC分类号： F23G5/44 , B01D53/46 , B01D53/68 , B01D53/70 , F23G5/46 , F23G7/06 , F23J15/06 , H01L21/205
CPC分类号： Y02C20/30 , Y02E20/363 , Y02P70/605
摘要： PROBLEM TO BE SOLVED: To lower the temperature of the exhaust gas generated during the manufacturing process of semiconductor without requiring a large amount of cooling air. SOLUTION: The treatment apparatus A has a combustion chamber 1, a secondary air inlet hole 9, a combustion exhaust gas discharge path 4 and a heat exchanger 5 provided near the combustion chamber 1. The combustion exhaust gas discharge path 4 is connected to a supply port of the heat exchanger 5, and the combustion chamber 1 and the heat exchanger 5 are housed in a storage container 6. The combustion chamber 1 has a closed end, on the side of which an exhaust gas supply path 2 and a burner 3 are arranged. The burner 3 raises the temperature of the exhaust gas supplied into the combustion chamber 1 to decompose or burn it, and the heat exchanger 5 lowers the temperature of the gas with the air taken in from the secondary air inlet hole 9 to discharge it. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2002202168A FLOW SENSOR AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：JP2002202168A
公开(公告)日：2002-07-19
申请号：JP2000400407
申请日：2000-12-28
申请人： OMRON TATEISI ELECTRONICS CO , TOKYO GAS CO LTD
发明人： FUJIWARA TAKASHI , SASAKI AKIRA , NAKAMURA KENICHI , KONDA NORIHIRO
IPC分类号： G01F1/692 , G01F1/684 , H01M8/02 , H01M8/04
摘要： PROBLEM TO BE SOLVED: To improve the temperature characteristics (circumferential temperature dependence) of a thermal flow sensor and to dispense with a temperature correction circuit required heretofore. SOLUTION: A heater 36 is provided to the central part of the insulating membrane 34 applied on the gap part 33 of a silicon substrate 32 and thermopiles 37 and 38 are provided on both sides of the heater and a circumferential temperature measuring resistor 39 is provided on the upper surface of the silicon substrate 32. The thermopiles 37 and 38 comprise polysilicon and aluminum, and polysilicon is doped with phosphorus (P). Herein, the doping quantity of phosphorus is set so that the temperature characteristics of the thermopiles 37 and 38 are almost equal to temperature characteristics due to a factor other than the thermopiles 37 and 38 in absolute value and become reverse in positive and negative and the temperature characteristics due to the factor other than the thermopiles 37 and 38 are negated by the temperature characteristics of the thermopiles 37 and 38.

5. 发明专利

JP2002137904A REFORMING CATALYST PROTECTING APPARATUS FOR STEAM REFORMER 失效
公开(公告)号：JP2002137904A
公开(公告)日：2002-05-14
申请号：JP2000326493
申请日：2000-10-26
申请人： TOKYO GAS CO LTD , MITSUBISHI KAKOKI KK , TOKYO GAS CHEMICALS CO LTD
发明人： TAKAHASHI TORU , KOBAYASHI YUJI , KATO HIDEHARU , KUSAKA RYOHEI , NAKAMURA KENICHI , AIDA KOJI
IPC分类号： C01B3/38 , B01J19/00 , B01J33/00
摘要： PROBLEM TO BE SOLVED: To provide an apparatus which protects a reforming catalyst led from carbon deposition in a steam reformer for a hydrocarbon gas in such unusual conditions as a failure of power or a water supply pump. SOLUTION: An apparatus, protecting a reforming catalyst in a seam reformer for a hydrocarbon gas, is installed as an attachment of the steam reformer. The apparatus is equipped with an emergency water-injection tank, being installed at an upper part of the reformer and connected to a water supply pump.

6. 发明专利

JP2001085734A DEVICE USING DIAMOND ULTRAVIOLET LIGHT-EMITTING ELEMENT 失效
公开(公告)号：JP2001085734A
公开(公告)日：2001-03-30
申请号：JP2000210154
申请日：2000-07-11
申请人： TOKYO GAS CO LTD
发明人： KONDA NORIHIRO , ISHIKURA TAKEFUMI , HORIUCHI KENJI , YAMASHITA SATOSHI , KAWAMURA AKI , NAKAMURA KAZUO , NAKAMURA KENICHI , IDE TAKAHIRO
IPC分类号： C09K11/55 , C09K11/78 , C09K11/81 , H01L33/34 , H01L33/50 , H01L33/58 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To enable a rebonding emitting of free exciton by permitting a phosphor in a wave-length region under specific length to absorb an ultraviolet ray which is higher than other emitted light peak intensity by not less than two times and which a diamond ultraviolet light-emitting element emits and to discharge secondary light whose wavelength is longer. SOLUTION: In a light-emitting element 20, a diamond ultraviolet ray-emitting element 10 is covered by a wavelength conversion material 21 having a wavelength conversion function converting an ultraviolet ray into visible light and it is covered by transparent resin 22. Then, it is integrated with a substrate 25. Diode structure whose free exciton reconnecting/emitting peak intensity in light emission by the flowing of current is larger than other light emission peak intensity by not less than two times is made as the diamond ultraviolet ray-emitting element 10 in the wave-length region of not more than 300 nm, which has p-n junction structure where a diamond p-type semiconductor layer and a diamond n-type semiconductor layer are installed. The emitted ultraviolet ray is absorbed and the secondary light of longer wavelength is emitted.

7. 发明专利

JP2000349330A DIAMOND ULTRAVIOLET LIGHT EMITTING ELEMENT 失效
公开(公告)号：JP2000349330A
公开(公告)日：2000-12-15
申请号：JP19255399
申请日：1999-07-07
申请人： TOKYO GAS CO LTD
发明人： HORIUCHI KENJI , ISHIKURA TAKEFUMI , YAMASHITA SATOSHI , KAWAMURA AKI , NAKAMURA KAZUO , NAKAMURA KENICHI , IDE TAKAHIRO
IPC分类号： H01L33/00 , H01L33/34 , H01L33/50 , H05B33/12 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide a compact and convenient current injection diamond ultraviolet light emitting element. SOLUTION: This element 10 is constituted of a boron dopant high pressure synthetic diamond (semiconductor layer) 1, a non-dopant vapor phase synthetic diamond (insulating layer) 3 arranged on the first surface of the diamond 1, an electrode 5 arranged on the surface of the insulating layer 3, and a second electrode 7 arranged on the second surface of the semiconductor layer 1. Then, free stimulation recombination light emission (235 nm) for realizing light emission by current injection can be made dominant.

8. 发明专利

JP2000340837A ULTRAVIOLET LIGHT EMITTING DIAMOND DEVICE 失效
公开(公告)号：JP2000340837A
公开(公告)日：2000-12-08
申请号：JP19523299
申请日：1999-07-09
申请人： TOKYO GAS CO LTD
发明人： ISHIKURA TAKEFUMI , HORIUCHI KENJI , YAMASHITA SATOSHI , KAWAMURA AKI , NAKAMURA KAZUO , NAKAMURA KENICHI , IDE TAKAHIRO
IPC分类号： H01L33/34 , H01L33/40 , H05B33/12 , H05B33/14 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To obtain a small and simple current injection ultraviolet light emitting diamond device. SOLUTION: A free stimulation recombination light emission ultraviolet light emitting diamond device is composed of a vapor phase synthesized diamond substrate 1 which is made of vapor phase synthesized diamond crystal, in which free stimulation recombination light emission (235 nm) caused by current injection is dominant, a surface conductive layer 2 formed on the surface of the diamond substrate 1 and electrodes 4 and 5 formed on the surface conductive layer 2.

9. 发明专利

JP2000019153A CARBON MONOXIDE SENSOR AND CARBON MONOXIDE CONCENTRATION MEASURING METHOD 失效
公开(公告)号：JP2000019153A
公开(公告)日：2000-01-21
申请号：JP19068098
申请日：1998-07-06
申请人： TOKYO GAS CO LTD , YAZAKI CORP
发明人： NAKAMURA KENICHI , TANDA RYOJI , MOCHIZUKI KAZU , TAKASHIMA HIROMASA
IPC分类号： G01N27/409 , G01N27/416
摘要： PROBLEM TO BE SOLVED: To make carbon monoxide detectable easily and accurately in a wide concentration range from a low concentration area to a high concentration area by changing the temperature of a sensor element by a sensor element temperature changing means according to the concentration of measured object gas. SOLUTION: An output port 1301 of an MPU 13 controls a heater power source 12 to switch high-low of the temperature of a solid electrolyte type sensor element 11. With power source closed, the MPU 13 outputs a signal L0 from the output port 1301 to the heater power source 12 and substitutes the output of the sensor element 11 held at a low temperature (400 deg.C, for instance) for a variable (x) from an input port 13i. When this variable X-value is 2V or more, that is, a measured object has high concentration, the signal L0 is outputted again to the heater power source 12 to hold the sensor element 11 at a high temperature (500 deg.C, for instance). When the variable x-value substituted by the output of the sensor element 11 at the time of high temperature is 1.3 V or more, concentration is high, and the variable x-value is made X by amplification to obtain gas concentration (y) by a high concentration time analytical curve, while gas concentration (y) is obtained by a low concentration time analytical curve at the time of low concentration with the x-value less than 2 V and outputted from an output port 1302 to an LCD 14.

10. 发明专利

JPH11304752A CARBON MONOXIDE SENSOR AND ITS AGING METHOD 失效
公开(公告)号：JPH11304752A
公开(公告)日：1999-11-05
申请号：JP11501098
申请日：1998-04-24
申请人： TOKYO GAS CO LTD , YAZAKI CORP
发明人： NAKAMURA KENICHI , TANDA AKIFUMI , MOCHIZUKI KAZU , TAKASHIMA HIROMASA
IPC分类号： G01N27/409 , G01N27/416
摘要： PROBLEM TO BE SOLVED: To suppress sensitivity to a hydrogen gas and to achieve a more accurate detection by arranging a detection electrode and a reference electrode while sandwiching an oxygen ion conductive solid electrolyte in a solid electrolyte type carbon monoxide sensor with the detection and reference electrodes and applying voltage between both the electrodes. SOLUTION: In a sensor element, a heater (f) made of platinum on an alumina substrate 9 is laminated and formed, and further an insulation layer (e), a catalysis oxide layer (d), a reference electrode (e), a solid electrolyte thick film (b), and a detection electrode (a) are successively laminated. They are formed by heat treatment such as printing, plating, and baking. A reference electrode (c) is brought into contact with surrounding atmosphere via the catalysis oxide layer (d). Also, the insulation layer (e) is made of a material with an electrical insulation property such as a ceramic raw material, aluminum oxide, or the mixture.

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