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1. 发明专利

JP2009281427A Device for storing and supplying digestion gas and its operating method 审中-公开
标题翻译：储存和供应废气及其操作方法的装置
公开(公告)号：JP2009281427A
公开(公告)日：2009-12-03
申请号：JP2008131776
申请日：2008-05-20
申请人： Tokyo Gas Co Ltd , 東京瓦斯株式会社
发明人： NISHII TAKUMI , MURATA YUKIMARO , ISHIKURA TAKEFUMI
IPC分类号： F17C11/00
摘要： PROBLEM TO BE SOLVED: To provide a device for storing and supplying digestion gas and its operating method having high energy efficiency.
SOLUTION: At a peak period (for example, when consuming equipment is used at daytime) digestion gas generated in a fermentation tank 2 is directly supplied via a direct shipment line L7 → supply line L6 provided in the middle of an absorbing and storing line L1 installed into the consuming equipment 8. At an off-peak period (for example, from the evening to the morning), when the digesting gas fully fills a storage vessel 7, and the gas consumption amount of the consuming equipment 8 is not great, the absorbing gas in the vessel is desorbed and supplied into the consuming equipment 8 via the supply line L6.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于储存和供应消化气体的装置及其具有高能量效率的操作方法。解决方案：在高峰期（例如，当白天使用消耗设备时），在发酵罐2中产生的消化气体直接通过设置在吸收器的中间的直接出货线L7→供给管线L6供给，存储线L1安装到消耗设备8中。在非高峰期（例如从傍晚到早上），当消化气体完全填充储存容器7时，消耗设备8的气体消耗量为容器中的吸收气体经由供给管线L6解吸并供给到消耗设备8中并不大。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2008116020A Gas storage and sending-out method and device 有权
标题翻译：气体存储和发送方法和装置
公开(公告)号：JP2008116020A
公开(公告)日：2008-05-22
申请号：JP2006302260
申请日：2006-11-08
申请人： Tokyo Gas Co Ltd , 東京瓦斯株式会社
发明人： NISHII TAKUMI , URABE YASUHIKO , ISHIKURA TAKEFUMI
IPC分类号： F17C11/00 , C10L3/00
CPC分类号： Y02E60/321
摘要： PROBLEM TO BE SOLVED: To provide a gas storage and a sending-out method and a device suitable for the high density storage of digestion gas.
SOLUTION: In a stage 1, inflow quantities to respective storage holders are set to V1i = Va and V2i = Vb. Operation is continued for a specific time with sending-out quantities as V1o = Vb' and V2o = Va'. During this time, holder internal pressure P1 is increased since the inflow quantity > the sending-out quantity is satisfied in a holder H1. The CO2 concentration of sending-out gas is reduced accompanied by this pressure increase, and the composition ratio of CH4 is increased. On the other hand, since the inflow quantity
摘要翻译：要解决的问题：提供一种适用于消化气体的高密度储存的气体储存和送出方法和装置。解决方案：在阶段1中，各个存储保持器的流入量设定为V1i = Va，V2i = Vb。发送量为V1o = Vb'，V2o = Va'，持续特定时间运行。在此期间，由于在保持器H1中满足了流出量>排出量，因此保持器内部压力P1增加。排出气体的二氧化碳浓度随压力增加而降低，CH4的组成比增加。另一方面，由于在保持器H2中满足流入量<排出量，所以排出气体的CH4组成比降低。结果，混合气体的组成通过抵消从两个保持器发出的气体组成变化而均匀化。在阶段2中，通过将流入量和发送量反转到两个保持器，继续操作特定时间。因此，保持器H2中的CH 4组成比增加。另一方面，保持器H1中的CH4组成比降低。该操作以阶段1和阶段2为一个周期重复控制。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007212412A Gas collection vessel for fine decompression of buried underground tank internal pressure 审中-公开
标题翻译：气体收集容器用于精细地下压地下油箱内压
公开(公告)号：JP2007212412A
公开(公告)日：2007-08-23
申请号：JP2006035555
申请日：2006-02-13
申请人： Tokyo Gas Co Ltd , 東京瓦斯株式会社
发明人： KANAZAWA KAZUHIRO , ISHIKURA TAKEFUMI
IPC分类号： G01M3/26 , B65D90/50
CPC分类号： Y02W30/805 , Y02W30/807
摘要： PROBLEM TO BE SOLVED: To provide a gas collection vessel for fine decompression of buried underground tank internal pressure, capable of easily, safely, and certainly performing a leakage test without power by a fine decompression method of the buried underground fuel tank, and to provide a leakage inspecting method by the fine decompression method of the buried underground fuel tank. SOLUTION: This gas collection vessel for fine decompression of the buried underground tank internal pressure is a gas collection vessel filled with adsorption material and is previously put into a vacuum state. The leakage inspecting method by the fine decompression method of the buried underground fuel tank uses the gas collection vessel. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于对埋藏的地下储罐内部压力进行精细减压的气体收集容器，能够容易地，安全地并且肯定地通过埋藏的地下燃料箱的精细减压方法进行无动力的泄漏测试，并通过埋藏地下燃油箱的细减压方法提供泄漏检查方法。解决方案：这种用于对埋藏的地下储罐内部压力进行精细减压的气体收集容器是填充有吸附材料的气体收集容器，并且预先处于真空状态。埋藏地下燃油箱采用微细减压方式的泄漏检测方法采用气体收集容器。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006242350A Boil-off gas treating method and treating device 有权
标题翻译：锅炉处理方法和处理装置
公开(公告)号：JP2006242350A
公开(公告)日：2006-09-14
申请号：JP2005061683
申请日：2005-03-04
申请人： Tokyo Gas Co Ltd , 東京瓦斯株式会社
发明人： HOSHI FUMIYUKI , MORI TETSUYA , MAEDA KENJI , TAKEMURA HIROYUKI , WAKATSUKI MASAHIRO , ISHIKURA TAKEFUMI , NISHIO SUSUMU
IPC分类号： F17C13/00 , B01D53/46 , B01D53/62 , B01D53/72 , B01J20/18 , B01J20/20 , B01J20/34
CPC分类号： Y02C10/08 , Y02C20/20 , Y02E60/321
摘要： PROBLEM TO BE SOLVED: To obtain a boil-off gas treating method, a treating device and a transport device of a low boiling liquefied gas which utilize a gas adsorption capacity variation through change in temperature of an absorptive material and which absorbs and discharges the boil-off gas without separately requiring an electrically driven booster when treating the boil-off gas which is generated in cryogenic liquified gas tanks. SOLUTION: The gas treating method of the boil-off gas by the absorptive material filled container is characterized in that, after absorbing and collecting the boil-off gas by the absorptive material which are cooled inside the absorptive material filled container, the boil-off gas is desorbed and discharged by increasing temperature using the outside heat input and by increasing pressure and the gas treating device of the boil-off gas by the absorptive material filled container is characterized in that, after absorbing and collecting the boil-off gas by the absorptive material which are cooled with cooling means, the boil-off gas is desorbed and discharged by increasing temperature using the outside heat input and by increasing pressure. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了获得蒸发气体处理方法，低沸点液化气体的处理装置和运输装置，其通过吸收材料的温度变化而利用气体吸附容量变化，并且吸收和在处理在低温液化气罐中产生的蒸发气体时，不需要电动助力器即可排出蒸发气体。解决方案：通过吸收材料填充容器的蒸发气体的气体处理方法的特征在于，在吸收材料填充容器内冷却的吸收材料吸收和收集蒸发气体之后，蒸发气体通过外部加热输入和通过增加压力而通过升高的温度被解吸和排出，并且通过吸收填充容器的蒸发气体的气体处理装置的特征在于，在吸收和收集蒸发之后通过用冷却装置冷却的吸收材料的气体，蒸发气体通过使用外部热量输入和增加压力的升高的温度解吸和排出。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2005331053A Gas pulsation reducing method, pulsation reducing system and pulsation reducing pipe 有权
标题翻译：气体减压方法，减排系统和减压管
公开(公告)号：JP2005331053A
公开(公告)日：2005-12-02
申请号：JP2004151108
申请日：2004-05-20
申请人： Tokyo Gas Co Ltd , 東京瓦斯株式会社
发明人： URABE YASUHIKO , ISHIKURA TAKEFUMI , KAWAMATA DAISUKE , YUASA KENICHIRO , NAGAI NOZOMI
IPC分类号： F16L55/04 , F23K5/00
摘要： PROBLEM TO BE SOLVED: To provide a gas pulsation reducing method, a pulsation reducing system and a pipe therefor, having simple and small structure, and capable of surely reducing pulsation of gas without requiring a space.
SOLUTION: The gas pulsation reducing method, the gas pulsation reducing system and the gas pulsation reducing pipe therefor, reduce pulsation of the gas by connecting the pulsation reducing pipe filled with an absorbent between an inner pipe constituted so that the gas contacts with the absorbent and an outer pipe having a diameter formed larger than the inner pipe, by holding the absorbent in a predetermined position while securing a gas flow passage in the pipe.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种气体脉动减小方法，一种脉动减少系统及其管道，其结构简单，结构小，能够可靠地减少气体脉动而不需要空间。解决方案：气体脉动降低方法，气体脉动降低系统和气体脉动降低管通过将填充有吸收剂的脉动减压管连接在构成气体与内部管的内管之间来减少气体的脉动吸收剂和外管，其直径大于内管，通过将吸收剂保持在预定位置，同时将气体流动通道固定在管中。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005048797A Gas adsorbing apparatus and its manufacturing method 有权
标题翻译：气体吸附装置及其制造方法
公开(公告)号：JP2005048797A
公开(公告)日：2005-02-24
申请号：JP2003203424
申请日：2003-07-29
申请人： Tokyo Gas Co Ltd , 東京瓦斯株式会社
发明人： URABE YASUHIKO , ISHIKURA TAKEFUMI , KANAZAWA KAZUHIRO , OTA SEIYA
IPC分类号： F17C11/00 , C01B32/336 , C01B31/10
摘要： PROBLEM TO BE SOLVED: To carry out an initial stabilizing treatment of a gas adsorbing apparatus which has a simple structure, and can adsorb a multicomponent gas without lowering the occlusion efficiency and without causing the change of composition between an introduced gas and a discharged gas at the practical level.
SOLUTION: In the gas adsorbing apparatus in which a single gas adsorbing container 1 is charged with activated carbon 2 of a single kind, the activated carbon in an unused state is processed by the initial stabilizing treatment. In this case, the initial stabilizing treatment is carried out at the pressure higher than the ordinary operating pressure used in the case of the ordinary usage of the gas adsorbing apparatus. Preferably, the treatment pressure in the initial stabilizing treatment is at least 1.5 times as high as that of the ordinary operating pressure.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了进行具有简单结构的气体吸附装置的初始稳定化处理，并且可以吸附多组分气体而不降低闭塞效率，并且不引起引入气体和排放气体处于实用水平。解决方案：在单一气体吸附容器1装有单一活性炭2的气体吸附装置中，通过初始稳定化处理处理未使用状态的活性炭。在这种情况下，初始稳定化处理是在比通常使用气体吸附装置的情况下使用的普通工作压力高的压力下进行的。优选地，初始稳定化处理中的处理压力是普通操作压力的至少1.5倍。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004182548A Method of manufacturing carbon nanotube 有权
公开(公告)号：JP2004182548A
公开(公告)日：2004-07-02
申请号：JP2002353154
申请日：2002-12-04
申请人： National Institute Of Advanced Industrial & Technology , Tokyo Gas Co Ltd , 東京瓦斯株式会社 , 独立行政法人産業技術総合研究所
发明人： HOSHI FUMIYUKI , ISHIKURA TAKEFUMI , YUMURA MORIO , OSHIMA SATORU , UCHIDA KUNIO
IPC分类号： C01B31/02
摘要： PROBLEM TO BE SOLVED: To obtain a monolayer and a multilayer carbon nanotube having ≥98 wt.% purity by purifying after forming carbon nanotube by the CVD method.
SOLUTION: The method of manufacturing the high purity carbon nanotube is performed by passing a gaseous carbon source through a catalyst body obtained by supporting a catalyst metal and co-catalyst metal on a base body consisting of porous magnesium oxide under a reaction temperature to produce the carbon nanotube and purifying the crude product. The purification is performed by crushing the crude product, sufficiently kneading with an acid or an alkali solution, reflux-treating to dissolve the base body, the catalyst metal and the co-catalyst metal and solid-liquid-separating to manufacture the carbon nanotube having ≥98 wt% purity.
COPYRIGHT: (C)2004,JPO&NCIPI

8. 发明专利

JP2002356776A METHOD OF MANUFACTURING SINGLE LAYER CARBON NANOTUBE 失效
公开(公告)号：JP2002356776A
公开(公告)日：2002-12-13
申请号：JP2001163190
申请日：2001-05-30
申请人： NAT INST OF ADV IND & TECHNOL , TOKYO GAS CO LTD
发明人： HOSHI FUMIYUKI , ISHIKURA TAKEFUMI , YUMURA MORIO , OSHIMA SATORU , FUJIWARA SHUZO , KOGA YOSHINORI
IPC分类号： C01B31/02 , C23C16/26
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a single layer carbon nanotube having a relatively uniform diameter and length at a low temperature. SOLUTION: This method of manufacturing the carbon nanotube comprises passing gas of an organic carbon raw material at 700 to 800 deg.C onto an active substrate constituting of high-purified alumina of

9. 发明专利

JP2002329179A IDENTIFICATION MARK USING DIAMOND 失效
公开(公告)号：JP2002329179A
公开(公告)日：2002-11-15
申请号：JP2001133663
申请日：2001-04-27
申请人： TOKYO GAS CO LTD
发明人： KONDA NORIHIRO , YOKOI TAIJI , ISHIKURA TAKEFUMI , KAWAMURA AKI
IPC分类号： C30B29/04 , G06K7/12 , G06K19/06 , H01L33/34 , H01L33/50 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To obtain an identification(ID) mark having a high security level. SOLUTION: In an ID mark using diamond, the diamond is controlled so that the content ratio of isotopes of carbon in the diamond is different from the ratio of natural isotopes. The ID mark is applied to various articles and various electronic elements.

10. 发明专利

JPH1079223A FIELD EMISSION-TYPE SMALL COLD CATHOD AND MANUFACTURE OF IT 失效
公开(公告)号：JPH1079223A
公开(公告)日：1998-03-24
申请号：JP23267696
申请日：1996-09-03
申请人： TOKYO GAS CO LTD
发明人： ASANO TANEMASA , ISHIKURA TAKEFUMI
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To uniformize field emission, to improve field emission efficiency, and to reduce consumption power by filling an emitter material into a recess after forming the recess on an insulating layer formed on a substrate and a polysilicon gate material. SOLUTION: The front surface of a Si monocrystal substrate 1 is oxidized, first and second insulating layers 2, 3 are provided on first and second main surface sides, polysilicon is deposited on the insulating layer 2 to form a gate electrode layer 4, and the front surface of the gate electrode layer 4 is oxidized to form a third insulating layer 5. Next, a recess 6 is formed by etching the insulating layer 5, the gate electrode layer 4 and the insulating layer 2, and then etched to form a side wall 7 and an oxidized film. The recess 6 whose tip is pointed is formed by etching the oxidized film, the whole part is heat- oxidized, an emitter oxidized film 8 is formed, and an emitter material 10 is filled into the recess 6. A window part 11 is formed by etching the Si monocrystal substrate 1 from the second main surface side, the oxidized film 8 is removed, and the emitter material 10 and the gate electrode layer 4 are exposed.

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