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1. 发明专利

JP2000131094A METHOD FOR COMPENSATING TEMPERATURE AND TEMPERATURE- COMPENSATING CIRCUIT USING IT, AND SENSOR AND HOT WATER- SUPPLYING APPARATUS 失效
公开(公告)号：JP2000131094A
公开(公告)日：2000-05-12
申请号：JP7843599
申请日：1999-03-23
申请人： TOKYO GAS CO LTD , GASTAR CORP , OMRON TATEISI ELECTRONICS CO
发明人： NAKAMURA KENICHI , KONDA NORIHIRO , KONDO MASATO , SHIGEOKA TAKUJI , EDA AKITO , NOZOE SATOSHI , BINGO HIDEYUKI , KINOSHITA MASAHIRO , SASAKI AKIRA
IPC分类号： G01P5/12 , G01D3/028 , G01F1/68 , G01F1/696 , G01F15/04 , G01P21/00
摘要： PROBLEM TO BE SOLVED: To easily and correctly compensate temperature by preventing the preliminarily adjusted offset value from deviating in adjusting gain and eliminating the need of repeatedly adjusting the offset value after adjusting the gain, or the like. SOLUTION: One of two heat-sensitive elements is used as a heat-sensitive element 1 for detection and the other is used as a heat-sensitive element 2 for temperature compensation. Conduction currents I1 and I2 (I1>I2) are supplied from constant current sources 3 and 4, thereby output voltages Vout 1, Vout 2 of the heat-sensitive elements 1, 2 are obtained. The output voltage Vout 3 of the heat-sensitive element 2 is offset adjusted to the Vout 1 by an offset adjustment circuit 5 at an ambient temperature T1. An adjusted output voltage Vout 4 is gain adjusted by a gain adjustment circuit 6 to agree with a Vout 1' at an ambient temperature T2.

2. 发明专利

JP2001249040A FLUID DETECTING SENSOR AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001249040A
公开(公告)日：2001-09-14
申请号：JP2000060645
申请日：2000-03-06
申请人： OMRON TATEISI ELECTRONICS CO , TOKYO GAS CO LTD
发明人： FUJIWARA TAKASHI , SASAKI AKIRA , NAKAMURA KENICHI , KONDA NORIHIRO
IPC分类号： G01F1/68
摘要： PROBLEM TO BE SOLVED: To reduce the resistance value of a heater, to generate heat largely, to increase the Seebeck coefficient of a thermopile and to enhance the sensitivity of a fluid detecting sensor (a gas flow sensor) which is used to detect the flow rate of a fluid such as a gas or the like. SOLUTION: The heater 36 which is composed of polysiliocn is formed on the surface of a thin filmlike bridge part 35, and thermopiles 37, 38 are arranged on both sides of it. The thermopiles 37, 38 are constituted of thin wires composed of polysilicon and aluminum. The heater 36 and the polysilicon thin wires 41 of the thermopiles 37, 38 are doped with P (phosphorus) by an ion implantation operation or the like, and the doping amount of the heater 36 is set to be larger than that of the polysilicon thin wires 41.

3. 发明专利

JP2000274662A INDUCTION PATH 失效
公开(公告)号：JP2000274662A
公开(公告)日：2000-10-03
申请号：JP8229399
申请日：1999-03-25
申请人： TOKYO GAS CO LTD , OMRON TATEISI ELECTRONICS CO , GASTAR CORP
发明人： NAKAMURA KENICHI , KONDA NORIHIRO , NOZOE SATOSHI , SASAKI AKIRA , KONDO MASATO , SHIGEOKA TAKUJI , EDA AKITO
IPC分类号： F23L1/00
摘要： PROBLEM TO BE SOLVED: To provide an induction path which leads the gas being the target of measurement to a sensor in condition that needless substance such as rubbish, dust, etc., are removed properly, and also does not produce pulsation in sensor output even in a high flow rate region. SOLUTION: This induction path is equipped with narrow passages 31-35 for raising the flow velocity of gas, and sedimentation chambers 21-25 forming hollow rectangular parallelepipeds for settling the needless substance in gas. The outlet of the narrow passage is opened, being biased to either the right or the left of one sidewall of the sedimentation chamber, and the outlet for the gas from the sedimentation chamber is opened in the sidewall on the side farther from the outlet of the narrow passage out of the sidewall vertical to one sidewall where the outlet of the narrow passage is opened, and also the position of it opening is set in a position separated enough from the sidewall opposed to the previous one sidewall. Hereby, the gas passes in a wide range within the sedimentation chamber, changing its flow direction by 90 deg. until it gets out of the sedimentation chamber after its entry, so the place of sedimentation of needless substance is widened, and the sedimentation chamber is utilized effectively.

4. 发明专利

JP2002202168A FLOW SENSOR AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：JP2002202168A
公开(公告)日：2002-07-19
申请号：JP2000400407
申请日：2000-12-28
申请人： OMRON TATEISI ELECTRONICS CO , TOKYO GAS CO LTD
发明人： FUJIWARA TAKASHI , SASAKI AKIRA , NAKAMURA KENICHI , KONDA NORIHIRO
IPC分类号： G01F1/692 , G01F1/684 , H01M8/02 , H01M8/04
摘要： PROBLEM TO BE SOLVED: To improve the temperature characteristics (circumferential temperature dependence) of a thermal flow sensor and to dispense with a temperature correction circuit required heretofore. SOLUTION: A heater 36 is provided to the central part of the insulating membrane 34 applied on the gap part 33 of a silicon substrate 32 and thermopiles 37 and 38 are provided on both sides of the heater and a circumferential temperature measuring resistor 39 is provided on the upper surface of the silicon substrate 32. The thermopiles 37 and 38 comprise polysilicon and aluminum, and polysilicon is doped with phosphorus (P). Herein, the doping quantity of phosphorus is set so that the temperature characteristics of the thermopiles 37 and 38 are almost equal to temperature characteristics due to a factor other than the thermopiles 37 and 38 in absolute value and become reverse in positive and negative and the temperature characteristics due to the factor other than the thermopiles 37 and 38 are negated by the temperature characteristics of the thermopiles 37 and 38.

5. 发明专利

JP2002310762A FLOW SENSOR 失效
公开(公告)号：JP2002310762A
公开(公告)日：2002-10-23
申请号：JP2001117079
申请日：2001-04-16
申请人： OMRON TATEISI ELECTRONICS CO
发明人： WAKABAYASHI SHUICHI , SASAKI AKIRA , NOZOE SATOSHI
IPC分类号： G01F1/696 , G01F1/692
摘要： PROBLEM TO BE SOLVED: To provide a flow sensor in which a high-accuracy temperature compensation can be performed over a long period. SOLUTION: The flow sensor is provided with a heater 3 which generates heat when a current is made to flow, temperature sensor 4a, 4b which are arranged near the sensor, a resistance thermometer sensor 5 which measures an ambient temperature and a control circuit which controls the current flowing to the heater. A change in the temperature distribution of the heat from the heater changed according to the flow rate or the like of a fluid is detected by the temperature sensors. The control circuit is provided with a bridge circuit wherein a first branch which connects the sensor 5 and a first fixed resistance in series and a second branch which connects the heater and a second fixed resistance in series are connected in parallel. The bridge circuit is formed on the same semiconductor substrate 1.

6. 发明专利

JP2002202169A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002202169A
公开(公告)日：2002-07-19
申请号：JP2000402153
申请日：2000-12-28
申请人： OMRON TATEISI ELECTRONICS CO
发明人： WAKABAYASHI SHUICHI , SASAKI AKIRA
IPC分类号： G01F1/692 , G01K7/00 , H01L21/306 , H01L29/84 , H01L35/32
摘要： PROBLEM TO BE SOLVED: To enhance the mechanical strength of a dielectric membrane in a semiconductor device wherein the dielectric membrane is formed on the surface of a semiconductor substrate so as to cover the cavity provided to the semiconductor substrate and an etching hole is bored in the dielectric membrane. SOLUTION: At the inner corner parts of the etching holes 17 and 18 bored in the dielectric membrane 13, a circular arc 20 having a radius r1 of curvature is formed so as to come into contact with a linear side 22 and a circular arc 21 having a radius r2 of curvature is formed so as to come into contact with other linear side 22 and both circular arcs 20 and 21 are continued smoothly.

7. 发明专利

JP2002081983A HEAT GENERATION DEVICE FOR SENSOR, SENSOR, AND ACCELERATION SENSOR 失效
公开(公告)号：JP2002081983A
公开(公告)日：2002-03-22
申请号：JP2000347282
申请日：2000-11-14
申请人： OMRON TATEISI ELECTRONICS CO
发明人： NOZOE SATOSHI , HORIBE KOJI , SASAKI AKIRA , KURATA KODAI , KATAOKA TOMOHIRO , KINOSHITA MASAHIRO
IPC分类号： G01F1/698 , G01F1/692 , G01N27/18 , G01P15/00 , G01P15/03 , G01P15/12 , G01P15/18
摘要： PROBLEM TO BE SOLVED: To improve accuracy so that the error in a heat generation temperature becomes small due to the change in an ambient temperature in a heater control circuit for controlling so that the heat generation temperature of the heater always becomes higher than the ambient temperature by a fixed temperature using a bridge circuit. SOLUTION: In the heater control circuit where the bridge circuit comprises fixed resistors 63 and 64, a heater 36, and a temperature-measuring resistor 52, and current flowing through the bridge circuit is controlled according to the potential difference between the middle point between the fixed resistor 63 and the temperature-measuring resistor 52, and the middle point between the fixed resistor 64 and the heater 36, a constant voltage Va is applied to the middle point between the fixed resistor 63 and the temperature-measuring resistor 52 via a resistor 74.

8. 发明专利

JP2000292234A THERMOSENSITIVE FLOW SENSOR 失效
公开(公告)号：JP2000292234A
公开(公告)日：2000-10-20
申请号：JP9925499
申请日：1999-04-06
申请人： OMRON TATEISI ELECTRONICS CO
发明人： WAKABAYASHI SHUICHI , SASAKI AKIRA , FUJIWARA TAKASHI
IPC分类号： G01P5/10 , G01F1/68 , G01F1/692 , H01L35/32
摘要： PROBLEM TO BE SOLVED: To provide a thermosensitive flow sensor whose sensitivity is high and accuracy is high by taking into consideration the nonuniformity of the isothermal curve of the temperature distribution of a heater part in the thermosensitive flow sensor which uses a thermopile-type temperature sensor which measures the flow rate, the flow velocity or the like of a fluid. SOLUTION: In this thermosensitive flow sensor 1, an insulating layer 3 is formed on the surface of a semiconductor substrate 2, and a heater part 11 is formed on the surface of the insulating layer. A first temperature sensor 12A is formed on the upstream side of a fluid, and a second temperature sensor 12B is formed on the downstream side while the heater part is used as the center. A gap part 4 is formed on the surface side of the semiconductor substrate so as to face a region which reaches the tip bonding part 15b of the second temperature sensor from the tip bonding part 15a of the first temperature sensor. The first and second temperature sensors are composed of a plurality of thermocouples 13A, 13B, and they are arranged in such a way that the arrangement density of the thermocouples becomes higher in the central part than in the peripheral part.

9. 发明专利

JPH11351959A CAN WITH WINDOW MATERIAL, METHOD FOR FIXING AND TEMPERATURE SENSOR 失效
公开(公告)号：JPH11351959A
公开(公告)日：1999-12-24
申请号：JP16463698
申请日：1998-06-12
申请人： OMRON TATEISI ELECTRONICS CO
发明人： DANNO MIKIFUMI , SASAKI AKIRA , SHIIKI MASAKAZU
IPC分类号： G01J1/02
摘要： PROBLEM TO BE SOLVED: To provide a temperature sensor for easily positioning a window material without reducing an effective diameter of a light passing a window hole. SOLUTION: The can 13 is mounted to cover an infrared detecting element 11 loaded on a metal stem 10. A window hole 13c is provided at a top surface 13b of the can, and an infrared transmission filter 18 is mounted at the top surface to block the hole. At this time, an endless metal thin film 20 is vapor deposited on a peripheral edge of the material, the film 20 is soldered to the top surface via a solder 19 between the film 2 and the top surface, thereby integrating them while keeping an airtightness therebetween. The filter is moved to a central position by means of a surface tension generated in the case of liquefying the solder, thereby automatically aligning it. Since the solder is existed only at a metal thin film forming position, it is not extended into the window material.

10. 发明专利

JPH0992116A ELECTROSTATIC RELAY, AND MANUFACTURE OF ELECTROSTATIC RELAY 失效
公开(公告)号：JPH0992116A
公开(公告)日：1997-04-04
申请号：JP24427395
申请日：1995-09-22
申请人： OMRON TATEISI ELECTRONICS CO
发明人： MORIGUCHI MAKOTO , SASAKI AKIRA , NAKANISHI YOICHI
IPC分类号： H01L21/302 , H01H1/50 , H01H11/00 , H01H59/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a small-type electrostatic relay of a power-saving type, and a manufacturing method thereof. SOLUTION: A normally closed movable contact 36 provided on a movable piece 32 comprising a semiconductor crystal base material rotatably supported through a pair of hinge parts 33, 34 above a fixed contact block 10 is higher than a normally opened movable contact 35. In the case where a voltage is not applied to an electrode 15 for driving and the movable piece 32, the normally closed movable contact 36 is in contact with normally closed fixed contacts 13, 14c. In the meantime, as a voltage is applied to both of them to generate electrostatic attractive force, the movable piece 32 is rotated about hinge parts 33, 34 as support points, and the normally opened movable contact 35 gets in contact with a normally opened fixed contact 12 and a common fixed contact 14.

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