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1. 发明专利

JP2013030758A Film formation device and film formation method 有权
标题翻译：胶片形成装置和胶片形成方法
公开(公告)号：JP2013030758A
公开(公告)日：2013-02-07
申请号：JP2012135435
申请日：2012-06-15
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： SUZUKI KUNIHIKO , ITO HIDEKI , IKETANI NAOHISA , TSUCHIDA SHUICHI , KAMATA ISAO , ITO MASAHIKO , NAITO MASAMI , FUJIBAYASHI HIROAKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/46
CPC分类号： C30B25/10
摘要： PROBLEM TO BE SOLVED: To provide a film formation device and a film formation method which efficiently heat a substrate with fine temperature control while suppressing cracks of a liner.SOLUTION: A film formation device 100 comprises: a chamber 1; a liner 2 dividing an inner wall 1a of the chamber 1 from a space A; a main heater 9 heating a substrate 7 from below; and auxiliary heaters 18 disposed between the liner 2 and the inner wall 1a and heating the substrate 7 from above. Both of the main heater 9 and the auxiliary heaters 18 are resistor heating type heaters. The auxiliary heaters 18 includes a first auxiliary heater 18a, a second auxiliary heater 18b, and a third auxiliary heater 18c. The first auxiliary heater 18a heats the substrate 7 in cooperation with the main heater 9. The second auxiliary heater 18b and the third auxiliary heater 18c heat the liner 2 with output lower than that of the first auxiliary heater 18a.
摘要翻译：要解决的问题：提供一种在抑制衬垫的裂纹的同时，在精细的温度控制下有效地加热衬底的成膜装置和成膜方法。解决方案：成膜装置100包括：室1; 将空腔1的内壁1a与空间A分隔开的衬垫2; 从下方加热基板7的主加热器9。以及设置在衬套2和内壁1a之间的辅助加热器18，并从上方加热衬底7。主加热器9和辅助加热器18都是电阻加热型加热器。辅助加热器18包括第一辅助加热器18a，第二辅助加热器18b和第三辅助加热器18c。第一辅助加热器18a与主加热器9配合加热基板7.第二辅助加热器18b和第三辅助加热器18c以比第一辅助加热器18a低的输出加热衬套2。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013145873A Deposition apparatus and deposition method 有权
标题翻译：沉积装置和沉积方法
公开(公告)号：JP2013145873A
公开(公告)日：2013-07-25
申请号：JP2012265217
申请日：2012-12-04
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： ITO HIDEKI , SUZUKI KUNIHIKO , SATO HIROSUKE , TSUCHIDA SHUICHI , KAMATA ISAO , ITO MASAHIKO , NAITO MASAMI , FUJIBAYASHI HIROAKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C30B25/165 , C30B25/14
摘要： PROBLEM TO BE SOLVED: To provide a deposition apparatus and a deposition method, which inhibit reaction of a source gas on a shower plate.SOLUTION: A deposition apparatus 100 supplies a plurality of kinds of gases toward a substrate 101 in a chamber 103 by using a shower plate 124. The shower plate 124 includes: a plurality of gas passages 121 which extend in the shower plate along a first surface on the substrate 101 side and which are connected to gas tubes 131 for supplying the plurality of kinds of gases, respectively; and a plurality of gas jetting ports 129 which are pierced so as to communicate the plurality of gas passages 121 and the inside of the chamber 103 on the first surface side. In the deposition apparatus 100, the plurality of kinds of gases which are respectively supplied from the gas tubes 131 to the gas passages 121 of the shower plate 124, and which are supplied from the gas jetting ports 129 to the substrate 101, respectively, without being mixed near and inside the shower plate 124.
摘要翻译：要解决的问题：提供一种抑制源气体在喷淋板上的反应的沉积设备和沉积方法。解决方案：沉积设备100通过使用多个气体朝向室103中的基板101提供多种气体淋浴板124.淋浴板124包括：多个气体通道121，其沿着基板101侧的第一表面在淋浴板中延伸并分别连接到用于供应多种气体的气体管131 ; 以及多个气体喷射口129，其被刺穿以便在第一表面侧上连通多个气体通道121和室103的内部。在沉积装置100中，分别从气体管131向喷淋板124的气体通道121供给并从气体喷射口129分别供给到基板101的多种气体，没有在淋浴板124附近和内部混合。

3. 发明专利

JP2013128086A Film formation apparatus and film formation method 有权
标题翻译：胶片形成装置和胶片形成方法
公开(公告)号：JP2013128086A
公开(公告)日：2013-06-27
申请号：JP2012066938
申请日：2012-03-23
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社
发明人： SUZUKI KUNIHIKO , ITO HIDEKI
IPC分类号： H01L21/205 , C23C16/46
CPC分类号： H01L21/0262 , C23C16/45517 , C23C16/45591 , C23C16/46 , C30B25/02 , C30B25/08 , C30B25/10 , C30B29/36 , H01L21/0237 , H01L21/02532
摘要： PROBLEM TO BE SOLVED: To provide a film formation apparatus and a film formation method which prevent a peripheral member from being deteriorated by the heat of a heater.SOLUTION: A film formation apparatus 200 comprises: a conductive booth bar 103 supporting a heater 208; a heater base 104 supporting the booth bar 103; a rotation cylinder 223 which supports a susceptor 207 with its upper part, and includes the rotation cylinder 223 where the heater 208, the booth bar 103, and the heater base 104; a rotation shaft 222 rotating the rotation cylinder 223; an electrode bar 106 provided in the rotation shaft 222 and supplying power to the heater 208 through the booth bar 103; and a conductive coupling part 105 where an upper end part of the electrode bar 106 penetrates from the lower side, the coupling part 105 fixing the electrode bar 106 and supporting the booth bar 103 and the heater base 104 from the lower side. A reflector 101 and a heat insulation part 102 are disposed between the heater 208 and the heater base 104 in the rotation cylinder 223.
摘要翻译：要解决的问题：提供一种防止周边部件被加热器的热量劣化的成膜装置和成膜方法。解决方案：成膜装置200包括：支撑加热器208的导电性摊杆103; 支撑展位栏103的加热器基座104; 旋转筒223，其具有支撑有上部的基座207，并且包括加热器208，展位杆103和加热器基座104的旋转圆筒223; 旋转轴223旋转的旋转轴222; 设置在旋转轴222中并通过展位杆103向加热器208供电的电极棒106; 以及电极棒106的上端部从下侧贯通的导电性接合部105，将电极棒106固定并从下侧支撑展位杆103和加热器基座104的连结部105。反射器101和隔热部分102设置在旋转圆筒223内的加热器208和加热器基座104之间。版权所有：（C）2013，JPO＆INPIT

4. 发明专利

JP2013225665A Silicon carbide deposition apparatus and silicon carbide deposition method 有权
标题翻译：硅碳化硅沉积法和碳化硅沉积法
公开(公告)号：JP2013225665A
公开(公告)日：2013-10-31
申请号：JP2013042248
申请日：2013-03-04
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社
发明人： SUZUKI KUNIHIKO , ITO HIDEKI , SATO HIROSUKE , TSUCHIDA SHUICHI , KAMATA ISAO , ITO MASAHIKO , NAITO MASAMI
IPC分类号： H01L21/205 , C23C16/42 , C23C16/52 , C23C16/54
CPC分类号： H01L21/02529 , C23C16/325 , C23C16/46 , C23C16/52 , C30B25/10 , C30B25/16 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide deposition apparatus and deposition method in which throughput can be improved by minimizing the time from completion of a deposition process to start of the next deposition process.SOLUTION: A silicon carbide deposition apparatus comprises a deposition chamber in which a reaction gas is supplied and a deposition process is performed, a temperature measuring section which measures a temperature inside of the deposition chamber, a plurality of heaters disposed within the deposition chamber, an output control section which independently controls output from each of the heaters, and a substrate conveyance section which conveys a substrate into and out of the deposition chamber. When the deposition process to the substrate is completed, the output control section turns off or decreases output from at least one of the plurality of heaters and, when the temperature measured by the temperature measuring section becomes such a temperature that the substrate conveyance section is operable within the deposition chamber, turns off or increases output from the at least one heater the output of which has been turned off or decreased. The substrate on which the deposition process has been performed is conveyed out of the deposition chamber by the substrate conveyance section.
摘要翻译：要解决的问题：提供一种碳化硅沉积设备和沉积方法，其中通过最小化从沉积工艺完成到开始下一沉积工艺的时间可以提高生产量。解决方案：碳化硅沉积设备包括沉积室其中提供反应气体并进行沉积处理，测量沉积室内部的温度的温度测量部分，设置在沉积室内的多个加热器，输出控制部分，其独立地控制从每个加热器和将基板输入和离开沉积室的基板输送部分。当完成对基板的沉积处理时，输出控制部分关闭或减少来自多个加热器中的至少一个的输出，并且当由温度测量部分测量的温度变为使得基板输送部分可操作的温度在沉积室内，关闭或增加其输出已经被关闭或减少的至少一个加热器的输出。已经进行了沉积处理的基板通过基板传送部分被输送出淀积室。

5. 发明专利

JP2013042092A Film-processing method 有权
标题翻译：电影处理方法
公开(公告)号：JP2013042092A
公开(公告)日：2013-02-28
申请号：JP2011179883
申请日：2011-08-19
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー
发明人： SUZUKI KUNIHIKO , SATO HIROSUKE , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/42 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a method for processing a film formed in the course of a film formation process.SOLUTION: The method comprises the following first to third steps, provided that the third step is carried out after the first and second steps are repeated in combination. In the first step, a substrate 7 is mounted on a spot-faced portion 8a of a susceptor 8 arranged in a reaction chamber, and then a reactive gas is introduced into the reaction chamber to form a SiC film 301 on the substrate 7. In the second step, an etching gas is introduced into the reaction chamber, and the etching gas is flowed from above the susceptor 8 down while rotating the susceptor 8 with the substrate 7 already removed therefrom, thereby removing the SiC film 301 which originates from the reactive gas and is formed over a stepped portion 8c extending from the spot-faced portion 8a of the susceptor 8 to its peripheral portion 8b. In the third step, the etching gas is introduced into the reaction chamber, thereby removing the SiC film 301 which originates from the reactive gas and is formed on the susceptor 8.
摘要翻译：待解决的问题：提供一种处理在成膜过程中形成的膜的方法。解决方案：该方法包括以下第一至第三步骤，条件是在组合重复第一和第二步骤之后执行第三步骤。在第一步骤中，将基板7安装在布置在反应室中的基座8的点对面部分8a上，然后将反应气体引入反应室中，以在基板7上形成SiC膜301。第二步骤，将反应室中的蚀刻气体引入反应室中，并且，从基体8的上方向下流动蚀刻气体，同时使已经从基板7移除的基座8旋转，从而去除源自反应性的SiC膜301 并且形成在从基座8的点面部分8a延伸到其周边部分8b的台阶部分8c上。在第三步骤中，将蚀刻气体引入反应室，从而去除源自反应气体的SiC膜301，并形成在基座8上。（C）2013，JPO＆INPIT

6. 发明专利

JP2013012665A Vapor phase growth method and vapor phase growth apparatus 有权
标题翻译：蒸气相生长法和蒸气相生长装置
公开(公告)号：JP2013012665A
公开(公告)日：2013-01-17
申请号：JP2011145654
申请日：2011-06-30
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/52
CPC分类号： C30B25/10 , C30B25/16
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth method and a vapor phase growth apparatus which detect whether or not a wafer is stuck to a susceptor during film formation and improve the yield and the throughput.SOLUTION: A wafer is introduced to a reaction chamber and is placed on a support part. A film is formed by heating the wafer by a heater provided at a lower part of the support part, rotating the wafer, and supplying a process gas to the wafer. Then, the temperature distribution is detected at least in the circumferential direction at a peripheral part of the wafer to determine whether or not the wafer is stuck to the support part on the basis of the detected temperature distribution.
摘要翻译：要解决的问题：提供一种气相生长方法和气相生长装置，其在成膜期间检测晶片是否粘附到基座，并提高产量和产量。解决方案：将晶片引入反应室并放置在支撑部分上。通过设置在支撑部分的下部的加热器加热晶片来形成膜，旋转晶片，并将工艺气体供应到晶片。然后，至少在圆周方向上在晶片的周边部分检测温度分布，以基于检测到的温度分布来确定晶片是否粘附到支撑部分。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2012124411A Semiconductor manufacturing apparatus and semiconductor manufacturing method 有权
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：JP2012124411A
公开(公告)日：2012-06-28
申请号：JP2010275679
申请日：2010-12-10
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , ARAI HIDEKI
IPC分类号： H01L21/31 , C01B33/02 , C23C16/46 , C30B25/10 , H01L21/205 , H05B3/03
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and a semiconductor manufacturing method, capable of providing a semiconductor device of higher performance, improved reliability, and lower cost, by suppressing degradation which is caused by infiltration of process gas into a connection part between a substrate heating heater and an electrode component.SOLUTION: The semiconductor manufacturing apparatus includes a process gas supply mechanism 12 which supplies process gas to a reactive chamber 11, a gas discharging mechanism 13 which discharges the process gas from the reactive chamber, a wafer supporting member 15 which places a wafer W in the reactive chamber, a ring 16 which places the wafer supporting member thereon, a rotational drive control mechanism 17 which is connected to the ring and rotates the wafer, a heater 18a which has an electrode contact surface 18c having a flatness of 0-0.01 mm and is set in the ring to heat the wafer up to a predetermined temperature, and an electrode component 19 which is connected to the electrode contact surface of the heater by a contact surface 19a having a flatness of 0-0.01 mm, to supply electric power to the heater.
摘要翻译：要解决的问题：提供一种半导体制造装置和半导体制造方法，能够通过抑制由于将工艺气体渗入到所述半导体装置中而引起的劣化而提供具有更高性能，更可靠性和更低成本的半导体装置基板加热加热器和电极部件之间的连接部分。解决方案：半导体制造装置包括：向反应室11供给处理气体的处理气体供给机构12，从反应室排出处理气体的排气机构13，放置晶片的晶片支撑部件15 W，将晶片支撑构件放置在其上的环16，连接到环上并旋转晶片的旋转驱动控制机构17，具有平坦度为0度的电极接触表面18c的加热器18a， 0.01mm，并设置在环中以将晶片加热到预定温度;以及电极部件19，其通过平坦度为0-0.01mm的接触表面19a连接到加热器的电极接触表面，以供应加热器的电力。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012028385A Semiconductor manufacturing apparatus and cleaning method of susceptor 有权
标题翻译：半导体制造设备和清洁方法
公开(公告)号：JP2012028385A
公开(公告)日：2012-02-09
申请号：JP2010162901
申请日：2010-07-20
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： TSUMORI TOSHIRO , MITANI SHINICHI , SUZUKI KUNIHIKO
IPC分类号： H01L21/205 , C23C16/44 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus capable of removing a film deposited on a susceptor in an SiC epitaxial growth process, and to provide a cleaning method of the susceptor capable of removing the SiC film deposited in the SiC epitaxial growth process.SOLUTION: A semiconductor manufacturing apparatus 1 includes: a film formation chamber 2 forming an SiC epitaxial film on a wafer W located on a susceptor S; and a cleaning chamber 5 communicating with the film formation chamber 2 through a conveyance chamber 4 having a robot 17 for transportation through which the susceptor S is transported, and removing an SiC film deposited on the susceptor S. The cleaning chamber 5 includes: a heater heating the susceptor S at a temperature of 400°C or higher; and etching gas supply means supplying etching gas from above the susceptor S to remove the SiC film.
摘要翻译：要解决的问题：提供一种能够在SiC外延生长工艺中去除沉积在基座上的膜的半导体制造装置，并且提供能够去除沉积在SiC外延中的SiC膜的基座的清洁方法成长过程。解决方案：半导体制造装置1包括：在位于基座S上的晶片W上形成SiC外延膜的成膜室2; 以及清洁室5，其通过具有运送机器人17的输送室4与输送室4连通，通过该机器人运送基座S，并移除沉积在基座S上的SiC膜。清洁室5包括：加热器在400℃以上的温度下加热感受体S; 以及蚀刻气体供给装置，从基座S的上方供给蚀刻气体，以除去SiC膜。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011231388A Film forming device and film forming method 有权
标题翻译：薄膜成型装置和薄膜成型方法
公开(公告)号：JP2011231388A
公开(公告)日：2011-11-17
申请号：JP2010104903
申请日：2010-04-30
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI , TSUMORI TOSHIRO
IPC分类号： C23C16/52 , C30B25/16 , H01L21/205
CPC分类号： C30B29/36 , C23C16/45519 , C23C16/46 , C23C16/52 , C30B25/16
摘要： PROBLEM TO BE SOLVED: To provide a film forming device and a film forming method which can precisely measure a temperature of a semiconductor substrate by non-contact manner.SOLUTION: The film forming device 50 has: a chamber 1 for containing a semiconductor substrate 6; a reaction gas supply part 14 for supplying a reaction gas 26 into the chamber 1; a heater 8 for heating the semiconductor substrate 6; a radiation thermometer 44 provided outside of the chamber 1 for receiving a synchrotron radiation from the semiconductor substrate 6 to measure a temperature of the semiconductor substrate 6; and a tubular member 47 which covers an optical path 48 of the synchrotron radiation between the semiconductor substrate 6 and the radiation thermometer 44. An inactive gas 25 is supplied to the tubular member 47 from an inactive gas supply part 4. Preferably, the tubular member 47 is configured on an outer peripheral face by using materials having the lower emissivity than an inner peripheral face.
摘要翻译：要解决的问题：提供一种通过非接触方式精确测量半导体衬底的温度的成膜装置和成膜方法。解决方案：成膜装置50具有：容纳半导体基板6的室1; 用于将反应气体26供应到室1中的反应气体供应部分14; 用于加热半导体衬底6的加热器8; 设置在室1的外部的辐射温度计44，用于接收来自半导体基板6的同步加速器辐射，以测量半导体基板6的温度; 以及管状构件47，其覆盖半导体衬底6和辐射温度计44之间的同步加速器辐射的光路48.非活性气体25从惰性气体供应部分4供应到管状构件47.优选地，管状构件 47通过使用比内周面低的发射率的材料构造在外周面上。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011195346A Film forming apparatus and film forming method 有权
标题翻译：薄膜成型装置和薄膜成型方法
公开(公告)号：JP2011195346A
公开(公告)日：2011-10-06
申请号：JP2010061205
申请日：2010-03-17
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI
IPC分类号： C30B29/36 , C23C16/455 , C30B25/14 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a film forming apparatus in which a reaction gas is efficiently used when forming an SiC (silicon carbide) film and which realizes the film with high film thickness uniformity and quality.SOLUTION: A film forming chamber 1 of a film forming apparatus 50 includes: a first gas supply passage 4 for a first reaction gas 25 containing a silicon source gas; a second gas supply passage 14 for a second reaction gas 26 containing a carbon source gas; a liner 2 which has a head part 31 with a cross section smaller than that of a body 30 on which a semiconductor substrate 6 is put, and covers a film forming chamber 1 inner wall. The first gas supply passage 4 consists of an inner tube and an outer pipe, the tip extends to a semiconductor substrate 6 proximity, and enables it to supply the first reaction gas 25 to the inner tube while supplying a hydrogen gas to the outer pipe. In addition, the second reaction gas 26 supplied to the head part 31 of the liner 2 from the second gas supply passage 14 is made to flow down to be mixed with the first reaction gas 25 on a surface of the semiconductor substrate 6 and to be made to form the SiC film on the semiconductor substrate 6 surface.
摘要翻译：要解决的问题：提供一种在形成SiC（碳化硅）膜时有效地使用反应气体并且实现具有高膜厚度均匀性和质量的膜的成膜设备。溶液：一种成膜室1 成膜装置50包括：用于含有硅源气体的第一反应气体25的第一气体供给通路4; 用于包含碳源气体的第二反应气体26的第二气体供给通道14; 衬垫2具有头部31，其截面小于其上放置半导体衬底6的主体30的横截面，并且覆盖成膜室1的内壁。第一气体供给通路4由内管和外管构成，尖端延伸到半导体基板6的附近，并且能够将第一反应气体25供给到内管，同时向外管供给氢气。此外，使从第二气体供给路径14向衬垫2的头部31供给的第二反应气体26向下流动，与半导体衬底6的表面上的第一反应气体25混合，在半导体基板6的表面上形成SiC膜。

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