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1. 发明专利

JP2012169543A Apparatus and method for manufacturing semiconductor 有权
标题翻译：装置和制造半导体的方法
公开(公告)号：JP2012169543A
公开(公告)日：2012-09-06
申请号：JP2011031030
申请日：2011-02-16
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a semiconductor which enable oily silane to be safely removed without deteriorating throughput.SOLUTION: A semiconductor manufacturing apparatus of this invention includes: a reaction chamber into which a wafer is brought; a process gas supply mechanism supplying a process gas to the reaction chamber; a wafer support member on which the wafer is placed; a heater for heating the wafer to a predetermined temperature; a rotation driving control mechanism for rotating the wafer; a gas exhaust mechanism including an exhaust port exhausting the gas from the reaction chamber; and an oxidized gas supply mechanism supplying an oxidized gas to an area above the exhaust port of the reaction chamber from a position lower than the horizontal position of the wafer support member.
摘要翻译：要解决的问题：提供一种能够安全地除去油性硅烷而不降低生产量的半导体制造装置和方法。解决方案：本发明的半导体制造装置包括：带有晶片的反应室; 将处理气体供给到反应室的工艺气体供给机构; 其上放置晶片的晶片支撑构件; 用于将晶片加热到预定温度的加热器; 用于旋转晶片的旋转驱动控制机构; 气体排出机构，包括从反应室排出气体的排气口; 以及氧化气体供给机构，其从低于晶片支撑构件的水平位置的位置向氧化气体供给到反应室的排气口上方的区域。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011108936A Semiconductor manufacturing apparatus and semiconductor manufacturing method 审中-公开
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：JP2011108936A
公开(公告)日：2011-06-02
申请号：JP2009264157
申请日：2009-11-19
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and a semiconductor manufacturing method reducing the rejection rate of process gas without reducing the property of a membrane in a film deposition step.
SOLUTION: The semiconductor manufacturing apparatus includes a first gas supply mechanism 17 supplying first process gas onto a first wafer W, a first gas discharge mechanism 18 discharging first exhaust gas, a first reaction chamber 11 forming a first film on the first wafer W, a gas reproducing part 31 connected to the first reaction chamber 11 to extract a predetermined gas component from the first exhaust gas to produce second process gas, a second gas supply mechanism 27 supplying second process gas onto a second wafer W', a second gas discharge mechanism 28 discharging second exhaust gas, and a second reaction chamber 21 forming a second film on the second wafer W'.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体制造装置和半导体制造方法，其在膜沉积步骤中不降低膜的性能来降低工艺气体的废气率。解决方案：半导体制造装置包括：第一气体供给机构17，其将第一处理气体供给到第一晶片W;排出第一排气的第一气体排出机构18;在第一晶片上形成第一膜的第一反应室11 W是连接到第一反应室11以从第一废气中提取预定气体成分以产生第二处理气体的气体再现部分31，将第二处理气体供应到第二晶片W'上的第二气体供给机构27，排出第二废气的气体排出机构28和在第二晶片W'上形成第二膜的第二反应室21。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2011086792A Apparatus and method for manufacturing semiconductor 有权
标题翻译：装置和制造半导体的方法
公开(公告)号：JP2011086792A
公开(公告)日：2011-04-28
申请号：JP2009238931
申请日：2009-10-16
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/46 , H01L21/683
CPC分类号： H01L21/02639 , C23C16/4584 , C23C16/4586 , C30B25/10 , H01L21/67109 , H01L21/68792
摘要： PROBLEM TO BE SOLVED: To provide an apparatus or a method for manufacturing a semiconductor which suppresses progression of deterioration of a heater, improves performance and reliability of a semiconductor device, and reduces cost of the semiconductor device. SOLUTION: This apparatus for manufacturing the semiconductor includes: a reacting furnace for introducing a wafer therein; a first gas supply mechanism for supplying process gas to the reacting furnace; a gas discharge mechanism for discharging gas from the reacting furnace; a wafer support member for mounting the wafer thereon; a ring for mounting the wafer support member thereon; a rotation drive control mechanism connected to the ring for rotating the wafer; a heater including a heater element installed in the ring, arranged for heating the wafer to a predetermined temperature and having a SiC layer at least on the front surface, and a heater electrode formed integrally with the heater element and having a SiC layer at least on the front surface; and a second gas supply mechanism for supplying SiC source gas into the ring. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：为了提供抑制加热器劣化进程的半导体制造装置或方法，提高了半导体器件的性能和可靠性，降低了半导体器件的成本。解决方案：该半导体制造装置包括：用于在其中引入晶片的反应炉; 用于向所述反应炉供给处理气体的第一气体供给机构; 用于从反应炉排出气体的气体排出机构; 用于将晶片安装在其上的晶片支撑构件; 用于在其上安装晶片支撑构件的环; 旋转驱动控制机构，其连接到所述环以旋转所述晶片; 加热器，其包括安装在所述环中的加热器元件，其布置用于将所述晶片加热到预定温度并且至少在所述前表面上具有SiC层;以及加热器电极，与所述加热器元件整体形成并且具有至少在所述SiC层上的SiC层前表面以及用于将SiC源气体供给到环中的第二气体供给机构。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2011021253A Film deposition system 审中-公开
标题翻译：电影沉积系统
公开(公告)号：JP2011021253A
公开(公告)日：2011-02-03
申请号：JP2009167891
申请日：2009-07-16
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI
IPC分类号： C23C16/46 , C23C16/458 , H01L21/205 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a film deposition system which securely checks the intrusion of a reaction gas into a rotary mechanism part, further swiftly heats and cools a wafer in a film deposition chamber, and further, exhaust a gas generated from a heater to the outside of the film deposition chamber.
SOLUTION: The rotary barrel 104a comprises: a first rotary barrel 104a
1 ; a second rotary barrel 104a
2 ; and a third rotary barrel 104a
3 . The second rotary barrel 104a
2 is composed using a material having a thermal expansion coefficient lower than that of the material composing the first rotary barrel 104a
1 . The third rotary barrel 104a
3 is composed using a material having a thermal expansion coefficient higher than that of the second rotary barrel 104a
2 . In a state where the third rotary barrel 104a
3 elongates by heating with a heater 120, the height h
3 of the third rotary barrel 104a
3 and the height h
2 of the second rotary barrel 104a
2 are made the same.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种成膜沉积系统，其可靠地检查反应气体侵入到旋转机构部分中，进一步快速加热和冷却膜沉积室中的晶片，并且还排出由加热器到成膜室的外部。解决方案：旋转滚筒104a包括：第一旋转滚筒104a 1; 第二旋转筒104a＆lt; SB＆gt;; 和第三旋转筒104a 3 SB。使用热膨胀系数低于构成第一旋转筒104a的材料的热膨胀系数的材料来构成第二旋转筒104a 2 。第三旋转筒104a <3>使用热膨胀系数高于第二旋转筒104a的材料构成。在通过用加热器120加热使第三旋转圆筒104a <3> SB> 3的状态下，第三旋转圆筒104a的高度h SB> 3 并且使第二旋转筒104a的高度h 2 相同。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2009283904A Coating apparatus and coating method 审中-公开
标题翻译：涂装和涂装方法
公开(公告)号：JP2009283904A
公开(公告)日：2009-12-03
申请号：JP2009042180
申请日：2009-02-25
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： MORIYAMA YOSHIKAZU , NISHIKAWA HIDEAKI , YAJIMA MASAMI , FURUYA HIROSHI , MITANI SHINICHI , NISHIBAYASHI MICHIO
IPC分类号： H01L21/205 , C23C16/458 , H01L21/67
CPC分类号： H01L21/68785 , C23C16/4412 , C23C16/4584 , C23C16/4586 , H01L21/67109 , H01L21/6838 , H01L21/68735
摘要： PROBLEM TO BE SOLVED: To provide a coating apparatus capable of performing stable high-speed rotation of a substrate, and to provide a coating method that ensures to form a coating on the substrate while performing stable high-speed rotation of the substrate. SOLUTION: A coating apparatus 100 has a susceptor 102 for supporting a silicon wafer 101, and a rotating portion 104 for rotating the susceptor 102. The rotating portion 104 is covered on top with the susceptor 102 to form a P 2 region. The contact surface 105 of the susceptor 102 with the silicon wafer 101 has many holes 106 therein. The silicon wafer 101 is attached to the susceptor 102 by evacuating gas from the P 2 region. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够进行基板的稳定的高速旋转的涂布装置，并且提供一种确保在基板上形成涂层同时进行基板的稳定高速旋转的涂布方法。解决方案：涂覆设备100具有用于支撑硅晶片101的基座102和用于旋转基座102的旋转部分104.旋转部分104在顶部被基座102覆盖以形成P 2 区域。具有硅晶片101的基座102的接触表面105在其中具有许多孔106。硅片101通过从P 2 区域排出气体而附接到基座102。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009135158A Vapor phase growth apparatus and vapor phase growth method 有权
标题翻译：蒸气相生长装置和蒸汽相生长方法
公开(公告)号：JP2009135158A
公开(公告)日：2009-06-18
申请号：JP2007308181
申请日：2007-11-29
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： MORIYAMA YOSHIKAZU , YAJIMA MASAMI , HIRATA HIRONOBU , MITANI SHINICHI
IPC分类号： H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus and method suppressing the sticking of a substrate and a support member.
SOLUTION: An epitaxial growth device 100 includes: a holder 110 for supporting a substrate; a chamber 120 for disposing the holder inside and forming a film containing Si on the substrate; a supply section 160 for supplying HCl gas to the substrate from the back side of the substrate; and a wafer heating source 150 for heating the substrate from the machining surface side of the substrate. Therefore, the sticking of the substrate and holder 110 can be suppressed.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供抑制基板和支撑构件的粘附的气相生长装置和方法。解决方案：外延生长装置100包括：用于支撑衬底的保持器110; 用于将保持器设置在内部并在衬底上形成含有Si的膜的室120; 供给部160，其从基板的背面向基板供给HCl气体; 以及用于从衬底的加工表面侧加热衬底的晶片加热源150。因此，可以抑制基板和保持器110的粘附。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009070915A Susceptor, semiconductor manufacturing device, and manufacturing method of semiconductor 有权
标题翻译： SUSICEPTOR，SEMICONDUCTOR MANUFACTURING DEVICE，AND MANUFACTURING METHOD OF SEMICONDUCTOR
公开(公告)号：JP2009070915A
公开(公告)日：2009-04-02
申请号：JP2007235685
申请日：2007-09-11
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： HIRATA HIRONOBU , MORIYAMA YOSHIKAZU , YAJIMA MASAMI , MITANI SHINICHI
IPC分类号： H01L21/683 , C23C16/458 , H01L21/205
CPC分类号： C23C16/4584 , C23C16/4585 , C23C16/46 , H01L21/68742 , H01L21/6875 , H01L21/68764
摘要： PROBLEM TO BE SOLVED: To provide a susceptor capable of inhibiting metal contamination during a film formation process, uniformly forming a film on a wafer, preventing a drop in yield and improving reliability of a semiconductor device, a semiconductor manufacturing device, and a semiconductor manufacturing method. SOLUTION: The susceptor 11 includes an inner susceptor 12 having a protrusion smaller than a diameter of a wafer w for mounting the wafer w on its surface, a first stage having an aperture at the center for mounting the inner susceptor 12 to shield the aperture, and an outer susceptor 13 provided on an upper stage of the first stage and having a second stage for mounting the wafer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够在成膜工艺期间抑制金属污染的感受体，在晶片上均匀地形成膜，防止半导体器件，半导体制造器件和半导体制造器件的产量下降和可靠性提高半导体制造方法。解决方案：基座11包括具有比用于将晶片w安装在其表面上的晶片w的直径小的突出部的内部基座12，第一级在其中心具有用于将内部基座12安装到屏蔽的中心孔，以及设置在第一平台的上台上的外部感受体13，并具有用于安装晶片的第二阶段。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008060545A Apparatus and method for manufacturing semiconductor 有权
标题翻译：装置和制造半导体的方法
公开(公告)号：JP2008060545A
公开(公告)日：2008-03-13
申请号：JP2007183031
申请日：2007-07-12
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： ITO HIDEKI , HIRATA HIRONOBU , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/52
CPC分类号： C23C16/46 , C23C16/52 , C30B25/105 , C30B25/16 , H01L21/67115
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing a semiconductor which can be heated uniformly up to the outermost periphery of a wafer.
SOLUTION: The semiconductor manufacturing apparatus is provided with a reaction chamber 11 into which a wafer w is introduced, gas supply means 12, 13 to supply a gas to the reaction chamber 11, a gas exhaust means 14 to exhaust the gas from the reaction chamber 11, a holder 16 to hold the wafer w on its outer periphery, a first heater 17a to heat the wafer w from its below, a reflector 18b installed above the holder 16, and a driving mechanism 19 to drive the reflector 18b.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体制造装置和方法，所述装置和方法可被均匀地加热到晶片的最外周。解决方案：半导体制造装置设置有反应室11，其中引入了晶片w，气体供应装置12,13向反应室11供应气体，排气装置14将气体从反应室11，用于将晶片w保持在其外周上的保持器16，用于从其下方加热晶片w的第一加热器17a，安装在保持器16上方的反射器18b和驱动反射器18b的驱动机构19 。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2013012665A Vapor phase growth method and vapor phase growth apparatus 有权
标题翻译：蒸气相生长法和蒸气相生长装置
公开(公告)号：JP2013012665A
公开(公告)日：2013-01-17
申请号：JP2011145654
申请日：2011-06-30
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/52
CPC分类号： C30B25/10 , C30B25/16
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth method and a vapor phase growth apparatus which detect whether or not a wafer is stuck to a susceptor during film formation and improve the yield and the throughput.SOLUTION: A wafer is introduced to a reaction chamber and is placed on a support part. A film is formed by heating the wafer by a heater provided at a lower part of the support part, rotating the wafer, and supplying a process gas to the wafer. Then, the temperature distribution is detected at least in the circumferential direction at a peripheral part of the wafer to determine whether or not the wafer is stuck to the support part on the basis of the detected temperature distribution.

10. 发明专利

JP2012028385A Semiconductor manufacturing apparatus and cleaning method of susceptor 有权
标题翻译：半导体制造设备和清洁方法
公开(公告)号：JP2012028385A
公开(公告)日：2012-02-09
申请号：JP2010162901
申请日：2010-07-20
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： TSUMORI TOSHIRO , MITANI SHINICHI , SUZUKI KUNIHIKO
IPC分类号： H01L21/205 , C23C16/44 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus capable of removing a film deposited on a susceptor in an SiC epitaxial growth process, and to provide a cleaning method of the susceptor capable of removing the SiC film deposited in the SiC epitaxial growth process.SOLUTION: A semiconductor manufacturing apparatus 1 includes: a film formation chamber 2 forming an SiC epitaxial film on a wafer W located on a susceptor S; and a cleaning chamber 5 communicating with the film formation chamber 2 through a conveyance chamber 4 having a robot 17 for transportation through which the susceptor S is transported, and removing an SiC film deposited on the susceptor S. The cleaning chamber 5 includes: a heater heating the susceptor S at a temperature of 400°C or higher; and etching gas supply means supplying etching gas from above the susceptor S to remove the SiC film.
摘要翻译：要解决的问题：提供一种能够在SiC外延生长工艺中去除沉积在基座上的膜的半导体制造装置，并且提供能够去除沉积在SiC外延中的SiC膜的基座的清洁方法成长过程。解决方案：半导体制造装置1包括：在位于基座S上的晶片W上形成SiC外延膜的成膜室2; 以及清洁室5，其通过具有运送机器人17的输送室4与输送室4连通，通过该机器人运送基座S，并移除沉积在基座S上的SiC膜。清洁室5包括：加热器在400℃以上的温度下加热感受体S; 以及蚀刻气体供给装置，从基座S的上方供给蚀刻气体，以除去SiC膜。版权所有（C）2012，JPO＆INPIT

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