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1. 发明专利

JP2015005658A 炭化珪素半導体成膜装置およびそれを用いた成膜方法有权
标题翻译：硅碳化硅半导体膜沉积装置和使用其的膜沉积方法
公开(公告)号：JP2015005658A
公开(公告)日：2015-01-08
申请号：JP2013130836
申请日：2013-06-21
申请人：株式会社デンソー , Denso Corp , 一般財団法人電力中央研究所 , Central Research Institute Of Electric Power Industry , 株式会社ニューフレアテクノロジー , Nuflare Technology Inc , トヨタ自動車株式会社 , Toyota Motor Corp , 株式会社豊田中央研究所 , Toyota Central R&D Labs Inc
发明人： FUJIBAYASHI HIROAKI , NAITO MASAMI , ITO MASAHIKO , KAMATA ISAO , TSUCHIDA SHUICHI , ITO HIDEKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C30B25/14 , C23C16/325 , C23C16/45519 , C23C16/45548 , C23C16/45553 , C23C16/45574 , C23C16/45587 , C23C16/4584 , C23C16/4586 , C30B25/165 , C30B29/36 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/02598 , H01L21/0262
摘要：【課題】SiC半導体におけるパーティクル発生の抑制と、膜厚および濃度の面内均一性の両立を図る。【解決手段】各分離部屋41〜43に各種ガスが別々に導入されるようにし、Si原料含有ガスとC原料含有ガスが第1、第2分離部屋41、42から延びる供給路41b、42を通じて独立して成長空間に供給されるようにする。また、第3分離部屋43から、供給路43bを通じて、Si原料含有ガスとC原料含有ガスの間に原料ガス以外のガスとなる第3ガスが導入されるようにする。これにより、供給路41b、42bの出口を出たのち、成長空間において初めて各種ガスが混じるようにできる。また、第3ガスが第1、第2ガスの間に流されることから、第1、第2ガスの拡散が低減される。このため、原料ガスが供給路41b、42b外側に拡散することを抑制でき、不要なSiC生成物が形成されることを抑制できる。【選択図】図1
摘要翻译：要解决的问题：为了实现对SiC半导体中的颗粒产生的抑制和膜厚度和浓度的面内均匀性的解决方案。解决方案：各种气体被独立地引入各个分离的室41-43中，并且含有Si材料的气体含有C材料的气体通过从第一和第二分离室41,42延伸的供给路径41b，42而独立地供给到生长空间。作为除了材料g以外的气体的第三气体被引入含有Si材料的气体和含有C材料的气体。因此，在从供给路径41b，42b的出口排出后，在生长空间中首先将各种气体混合。由于允许第三气体在第一气体和第二气体之间流动，所以第一气体和第二气体的扩散减少。由此，可以抑制原料气体向供给通路41b，42b的外部扩散，能够抑制不必要的SiC制品的形成。

2. 发明专利

JP2013030758A Film formation device and film formation method 有权
标题翻译：胶片形成装置和胶片形成方法
公开(公告)号：JP2013030758A
公开(公告)日：2013-02-07
申请号：JP2012135435
申请日：2012-06-15
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： SUZUKI KUNIHIKO , ITO HIDEKI , IKETANI NAOHISA , TSUCHIDA SHUICHI , KAMATA ISAO , ITO MASAHIKO , NAITO MASAMI , FUJIBAYASHI HIROAKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/46
CPC分类号： C30B25/10
摘要： PROBLEM TO BE SOLVED: To provide a film formation device and a film formation method which efficiently heat a substrate with fine temperature control while suppressing cracks of a liner.SOLUTION: A film formation device 100 comprises: a chamber 1; a liner 2 dividing an inner wall 1a of the chamber 1 from a space A; a main heater 9 heating a substrate 7 from below; and auxiliary heaters 18 disposed between the liner 2 and the inner wall 1a and heating the substrate 7 from above. Both of the main heater 9 and the auxiliary heaters 18 are resistor heating type heaters. The auxiliary heaters 18 includes a first auxiliary heater 18a, a second auxiliary heater 18b, and a third auxiliary heater 18c. The first auxiliary heater 18a heats the substrate 7 in cooperation with the main heater 9. The second auxiliary heater 18b and the third auxiliary heater 18c heat the liner 2 with output lower than that of the first auxiliary heater 18a.
摘要翻译：要解决的问题：提供一种在抑制衬垫的裂纹的同时，在精细的温度控制下有效地加热衬底的成膜装置和成膜方法。解决方案：成膜装置100包括：室1; 将空腔1的内壁1a与空间A分隔开的衬垫2; 从下方加热基板7的主加热器9。以及设置在衬套2和内壁1a之间的辅助加热器18，并从上方加热衬底7。主加热器9和辅助加热器18都是电阻加热型加热器。辅助加热器18包括第一辅助加热器18a，第二辅助加热器18b和第三辅助加热器18c。第一辅助加热器18a与主加热器9配合加热基板7.第二辅助加热器18b和第三辅助加热器18c以比第一辅助加热器18a低的输出加热衬套2。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013225665A Silicon carbide deposition apparatus and silicon carbide deposition method 有权
标题翻译：硅碳化硅沉积法和碳化硅沉积法
公开(公告)号：JP2013225665A
公开(公告)日：2013-10-31
申请号：JP2013042248
申请日：2013-03-04
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社
发明人： SUZUKI KUNIHIKO , ITO HIDEKI , SATO HIROSUKE , TSUCHIDA SHUICHI , KAMATA ISAO , ITO MASAHIKO , NAITO MASAMI
IPC分类号： H01L21/205 , C23C16/42 , C23C16/52 , C23C16/54
CPC分类号： H01L21/02529 , C23C16/325 , C23C16/46 , C23C16/52 , C30B25/10 , C30B25/16 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide deposition apparatus and deposition method in which throughput can be improved by minimizing the time from completion of a deposition process to start of the next deposition process.SOLUTION: A silicon carbide deposition apparatus comprises a deposition chamber in which a reaction gas is supplied and a deposition process is performed, a temperature measuring section which measures a temperature inside of the deposition chamber, a plurality of heaters disposed within the deposition chamber, an output control section which independently controls output from each of the heaters, and a substrate conveyance section which conveys a substrate into and out of the deposition chamber. When the deposition process to the substrate is completed, the output control section turns off or decreases output from at least one of the plurality of heaters and, when the temperature measured by the temperature measuring section becomes such a temperature that the substrate conveyance section is operable within the deposition chamber, turns off or increases output from the at least one heater the output of which has been turned off or decreased. The substrate on which the deposition process has been performed is conveyed out of the deposition chamber by the substrate conveyance section.
摘要翻译：要解决的问题：提供一种碳化硅沉积设备和沉积方法，其中通过最小化从沉积工艺完成到开始下一沉积工艺的时间可以提高生产量。解决方案：碳化硅沉积设备包括沉积室其中提供反应气体并进行沉积处理，测量沉积室内部的温度的温度测量部分，设置在沉积室内的多个加热器，输出控制部分，其独立地控制从每个加热器和将基板输入和离开沉积室的基板输送部分。当完成对基板的沉积处理时，输出控制部分关闭或减少来自多个加热器中的至少一个的输出，并且当由温度测量部分测量的温度变为使得基板输送部分可操作的温度在沉积室内，关闭或增加其输出已经被关闭或减少的至少一个加热器的输出。已经进行了沉积处理的基板通过基板传送部分被输送出淀积室。

4. 发明专利

JP2014187282A Film deposition apparatus and a film forming method 有权
标题翻译：薄膜成型装置和薄膜成型方法
公开(公告)号：JP2014187282A
公开(公告)日：2014-10-02
申请号：JP2013062150
申请日：2013-03-25
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： ITO HIDEKI , TSUCHIDA SHUICHI , KAMATA ISAO , ITO MASAHIKO , NAITO MASAMI , FUJIBAYASHI HIROAKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/42 , C23C16/44 , C23C16/46
CPC分类号： H01L21/68785 , C23C16/4408 , C30B25/10 , C30B25/14 , C30B25/16 , H01L21/67109
摘要： PROBLEM TO BE SOLVED: To provide a film forming apparatus and a film forming method, capable of preventing a corrosive gas from contaminating a space including a lower heater and preventing the lower heater from being corroded by the corrosive gas when a substrate is carried in or carried out, and increasing productivity by making it possible to carry in or carry out the substrate at a high temperature.SOLUTION: When a substrate is carried in or carried out, a space in which film forming process is performed, a space including a lower heater 16, and a space including an upper heater 19 are made to be an atmosphere of an inert gas.
摘要翻译：要解决的问题：提供一种成膜设备和成膜方法，其能够防止腐蚀性气体污染包括下加热器的空间，并且当衬底被携带时防止下加热器被腐蚀性气体腐蚀，或实现并且通过使得可以在高温下携带或执行基板来提高生产率。解决方案：当衬底被携带或执行时，进行成膜处理的空间包括较低的加热器16和包括上加热器19的空间被制成惰性气体的气氛。

5. 发明专利

JP2013145873A Deposition apparatus and deposition method 有权
标题翻译：沉积装置和沉积方法
公开(公告)号：JP2013145873A
公开(公告)日：2013-07-25
申请号：JP2012265217
申请日：2012-12-04
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー , Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Denso Corp , 株式会社デンソー , Toyota Motor Corp , トヨタ自動車株式会社 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所
发明人： ITO HIDEKI , SUZUKI KUNIHIKO , SATO HIROSUKE , TSUCHIDA SHUICHI , KAMATA ISAO , ITO MASAHIKO , NAITO MASAMI , FUJIBAYASHI HIROAKI , ADACHI AYUMI , NISHIKAWA KOICHI
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C30B25/165 , C30B25/14
摘要： PROBLEM TO BE SOLVED: To provide a deposition apparatus and a deposition method, which inhibit reaction of a source gas on a shower plate.SOLUTION: A deposition apparatus 100 supplies a plurality of kinds of gases toward a substrate 101 in a chamber 103 by using a shower plate 124. The shower plate 124 includes: a plurality of gas passages 121 which extend in the shower plate along a first surface on the substrate 101 side and which are connected to gas tubes 131 for supplying the plurality of kinds of gases, respectively; and a plurality of gas jetting ports 129 which are pierced so as to communicate the plurality of gas passages 121 and the inside of the chamber 103 on the first surface side. In the deposition apparatus 100, the plurality of kinds of gases which are respectively supplied from the gas tubes 131 to the gas passages 121 of the shower plate 124, and which are supplied from the gas jetting ports 129 to the substrate 101, respectively, without being mixed near and inside the shower plate 124.
摘要翻译：要解决的问题：提供一种抑制源气体在喷淋板上的反应的沉积设备和沉积方法。解决方案：沉积设备100通过使用多个气体朝向室103中的基板101提供多种气体淋浴板124.淋浴板124包括：多个气体通道121，其沿着基板101侧的第一表面在淋浴板中延伸并分别连接到用于供应多种气体的气体管131 ; 以及多个气体喷射口129，其被刺穿以便在第一表面侧上连通多个气体通道121和室103的内部。在沉积装置100中，分别从气体管131向喷淋板124的气体通道121供给并从气体喷射口129分别供给到基板101的多种气体，没有在淋浴板124附近和内部混合。

6. 发明专利

JP2012151177A Compound semiconductor substrate and method of manufacturing the same 有权
标题翻译：化合物半导体基板及其制造方法
公开(公告)号：JP2012151177A
公开(公告)日：2012-08-09
申请号：JP2011007056
申请日：2011-01-17
申请人： Denso Corp , 株式会社デンソー
发明人： FUJIBAYASHI HIROAKI , NAITO MASAMI , OYA NOBUYUKI
IPC分类号： H01L21/02 , H01L21/336 , H01L29/12 , H01L29/78
CPC分类号： H01L29/2003 , H01L21/02002 , H01L21/0475 , H01L21/76254 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/7827 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate in which a desired polar face can be used both on a first surface and a second surface.SOLUTION: An n-type SiC substrate 1 whose both surfaces are (000-1) C-faces is manufactured by bonding both (0001) Si-faces of two n-type SiC substrates 11 and 12 to each other. This can form a compound semiconductor substrate in which a desired polar face can be used both on a first surface and a second surface. The formation of a vertical element such as a vertical power MOSFET by the n-type SiC substrate 1 whose both surfaces are the (000-1) C-faces can obtain high channel mobility on the first surface side of the n-type SiC substrate 1, and can reduce the contact resistance between a drain electrode and a SiC contact face on the second surface side.
摘要翻译：要解决的问题：提供其中可以在第一表面和第二表面上使用期望的极性面的化合物半导体衬底。通过将两个（0001）Si面形成两个（0001）Si面，制造两面为（000-1）个C面的n + 型SiC衬底1 n + 型SiC衬底11和12。这可以形成其中可以在第一表面和第二表面上都使用所需极性面的化合物半导体衬底。通过由两个表面（000-1）C面形成的n + 型SiC衬底1，形成诸如垂直功率MOSFET的垂直元件，可以获得高通道在n + 型SiC衬底1的第一表面侧上的迁移率，并且可以降低第二表面侧的漏电极和SiC接触面之间的接触电阻。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2004292255A Method and apparatus for growing silicon carbide crystal 有权
标题翻译：用于生长碳化硅晶体的方法和装置
公开(公告)号：JP2004292255A
公开(公告)日：2004-10-21
申请号：JP2003088164
申请日：2003-03-27
申请人： Denso Corp , 株式会社デンソー
发明人： TAKEUCHI YUICHI , NAITO MASAMI
IPC分类号： C30B29/36 , C23C16/42 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for growing a silicon carbide crystal, by which the silicon carbide crystal having an in-plane film thickness distribution better than that of a conventional silicon carbide crystal can be obtained.
SOLUTION: In the method for growing the silicon carbide crystal, (1) the partial pressure of a gas containing Si based on the total pressure in a growth furnace is controlled to such an extent that the growth rate of the silicon carbide crystal per unit gas flow rate is not changed or reduced when the partial pressure of the gas containing Si is increased, and (2) a raw material gas is fed toward the surface of a substrate 7 by using a CVD apparatus equipped with a gas introducing pipe 3 having a double structure, wherein the raw material gas is caused to flow together with a carrier gas through a gas introducing tube 3a provided at the outside and only the carrier gas is caused to flow through a gas introducing tube 3b provided at the center side.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种用于生长碳化硅晶体的装置和方法，通过该方法可以获得具有比常规碳化硅晶体更好的面内膜厚分布的碳化硅晶体。解决方案：在用于生长碳化硅晶体的方法中，（1）基于生长炉中的总压力的含有Si的气体的分压被控制到使得碳化硅晶体的生长速率当含Si的气体的分压增加时，每单位气体流量没有变化或降低，（2）原料气体通过使用配备有气体导入管的CVD装置向基板7的表面供给 3具有双重结构，其中使原料气体与载气通过设置在外部的气体导入管3a一起流动，并且仅使载气流过设置在中心侧的气体导入管3b 。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2014099561A Method for analyzing crystal defect of semiconductor specimen 有权
标题翻译：用于分析半导体样本的晶体缺陷的方法
公开(公告)号：JP2014099561A
公开(公告)日：2014-05-29
申请号：JP2012251451
申请日：2012-11-15
申请人： Denso Corp , 株式会社デンソー
发明人： KAMIHIGASHI HIDEYUKI , NAITO MASAMI
IPC分类号： H01L21/66 , G01N23/04
摘要： PROBLEM TO BE SOLVED: To provide a method for analyzing a crystal defect of a semiconductor specimen that is able to accurately identify a position where a crystal defect exists.SOLUTION: A method for analyzing a crystal defect of a semiconductor specimen obtains a transmission electron microscope image reflecting a crystal defect 2 and an optical intensity mapping image indicating a boundary position between a semiconductor substrate 1a and an epitaxial layer 1b by transmission electron microscope observation and Raman spectroscopic measurement, and creates a composite image by overlapping them. The method identifies which place the crystal defect 2 exists in, the semiconductor substrate 1a or the epitaxial layer 1b, from the composite image. This enables exact identification of the position where the crystal defect exists.
摘要翻译：要解决的问题：提供一种用于分析能够准确地识别存在晶体缺陷的位置的半导体样品的晶体缺陷的方法。解决方案：用于分析半导体样品的晶体缺陷的方法获得透射电子显微镜通过透射电子显微镜观察和拉曼光谱测量反映晶体缺陷2的图像和表示半导体衬底1a和外延层1b之间的边界位置的光强度映射图像，并通过重叠它们来创建合成图像。该方法从合成图像中识别晶体缺陷2存在于哪个位置，半导体衬底1a或外延层1b中。这使得能够精确地识别存在晶体缺陷的位置。

9. 发明专利

JP2008091934A Silicon carbide semiconductor device 有权
标题翻译：硅碳化硅半导体器件
公开(公告)号：JP2008091934A
公开(公告)日：2008-04-17
申请号：JP2007284061
申请日：2007-10-31
申请人： Denso Corp , 株式会社デンソー
发明人： KATAOKA MITSUHIRO , NAITO MASAMI , TAKEUCHI YUICHI , RAJESH KUMAR , MATSUNAMI HIROYUKI , KIMOTO TSUNENOBU
IPC分类号： H01L29/80 , H01L21/205 , H01L21/337 , H01L29/808
CPC分类号： H01L29/8083
摘要： PROBLEM TO BE SOLVED: To suppress facet formation in a process of epitaxial growth on the inner wall surface in a trench formed in a substrate.
SOLUTION: A hexagonal SiC substrate, with {11-20} surface set as a main surface, is used in an SiC substrate 90, and a trench groove 91 is formed in the SiC substrate. The trench 91 has a side wall surface inclined by one degree or more from {0001} surface in a sectional shape. An SiC epitaxial layer is formed on the inner wall surface of the trench 91.
COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2007262434A Cvd system 有权
标题翻译： CVD系统
公开(公告)号：JP2007262434A
公开(公告)日：2007-10-11
申请号：JP2006085213
申请日：2006-03-27
申请人： Denso Corp , 株式会社デンソー
发明人： MAKINO HIDEMI , NAITO MASAMI , HIROSE FUSAO , KURITANI EIJI , MORISHITA TOSHIYUKI
IPC分类号： C23C16/458 , C23C16/42 , C23C16/44 , C23C16/46 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a CVD system capable of preventing deposition of particles on an epitaxial film deposited on a substrate.
SOLUTION: The CVD system comprises: a glowing vessel 1 in which a substrate 7 is arranged and crystals are grown on the surface of the substrate 7; a susceptor 4 arranged in the deposition chamber to hold the substrate 7; a heating unit 5 arranged facing the susceptor 4 in the deposition chamber 1 to heat the substrate 7 and the susceptor 4; and a thermal insulating unit 2 arranged in the deposition chamber 1 on the side opposite to the heating unit 5 in the susceptor 4. The thermal insulating unit 2 has one or more thermal insulating boards 2a-2c including at least the thermal insulating board 2a consisting of a high melting point metal having the melting point not lower than the epitaxial temperature of the crystals or its alloy. The plurality of thermal insulating boards 2a-2c are provided, and the spacing between the susceptor 4 and the thermal insulating boards 2a-2c, and the spacing between the thermal insulating boards 2a-2c are reduced more as the temperature of the parts at which the thermal insulating boards 2a-2c are arranged when the substrate 7 and the susceptor 4 are heated by the heating unit 5 becomes higher.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止沉积在基板上的外延膜上的颗粒沉积的CVD系统。解决方案：CVD系统包括：发光容器1，其中布置基板7，并且在基板7的表面上生长晶体; 布置在所述沉积室中以保持所述基板7的基座4; 在沉积室1中面向基座4设置的加热单元5，以加热基板7和基座4; 以及布置在沉积室1中的与基座4中的加热单元5相对的一侧的隔热单元2.隔热单元2具有至少包括绝热板2a的绝热板2a-2c，的熔点不低于晶体或其合金的外延温度的高熔点金属。设置多个绝热板2a-2c，并且基座4与隔热板2a-2c之间的间隔以及绝热板2a-2c之间的间隔随着其中的部件的温度而降低当基板7和基座4被加热单元5加热时，布置绝热板2a-2c。版权所有（C）2008，JPO＆INPIT

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