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    • 1. 发明专利
    • Pressure contact type semiconductor device
    • 压力接触式半导体器件
    • JP2006005292A
    • 2006-01-05
    • JP2004182473
    • 2004-06-21
    • Nissan Motor Co Ltd日産自動車株式会社
    • MIYATA HIDEAKIOKADA YASUHIRO
    • H01L25/10
    • H01L2224/40137
    • PROBLEM TO BE SOLVED: To provide a pressure contact type semiconductor device where low thermal stress is applied on a first semiconductor chip. SOLUTION: The pressure contact type semiconductor device has a first semiconductor chip 1, a first top buffer 5a and a first underside buffer 6a disposed with the first semiconductor chip 1 being sandwiched between the buffers, and a top electrode plate 3 and an underside electrode plate 4 disposed with the first top buffer 5a, the first semiconductor chip 1, and the first underside buffer 6a being sandwiched between the electrode plates. The first top buffer 5a is directly positioned relative to the top electrode plate 3, the underside electrode plate 4, or the first underside plate 6a by fitting to concave portions 10a and convex portions 11a. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种在第一半导体芯片上施加低热应力的压接式半导体器件。 解决方案:压力接触型半导体器件具有第一半导体芯片1,第一顶部缓冲器5a和设置在第一半导体芯片1被夹在缓冲器之间的第一下侧缓冲器6a,以及顶部电极板3和 设置有第一顶部缓冲器5a,第一半导体芯片1和第一下侧缓冲器6a的下侧电极板4夹在电极板之间。 第一顶部缓冲器5a通过装配到凹部10a和凸部11a而相对于顶部电极板3,下侧电极板4或第一下侧板6a直接定位。 版权所有(C)2006,JPO&NCIPI
    • 3. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2004128117A
    • 2004-04-22
    • JP2002288481
    • 2002-10-01
    • Nissan Motor Co Ltd日産自動車株式会社
    • OKADA YASUHIROSHIBUYA AKIHIRO
    • H01L25/07H01L25/18
    • H01L2224/48137H01L2224/48139H01L2224/73265H01L2924/1305H01L2924/13055H01L2924/3511H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a semiconductor device in which a semiconductor element is effectively cooled.
      SOLUTION: A metal plate 19 so arranged as to be pressurized by its end with a bolt is embedded between the bolt and a bolt 18 jointing a bus bar 13 where a semiconductor chip 11 is provided to a cooling jacket 16. As a result, the clamping pressure of the bolt 18 acts on a resin mold 14 between the bolts 18 as well through the metal plate 19, and at the same time, the pressure to the cooling member evenly acts on the entire bus bar 13. Thus, the press-contact force between the bus bar 13 and the cooling jacket 16 improves to reduce the thermal resistance between them, so the heat generated at the semiconductor chip 11 is efficiently transferred to the cooling jacket 16 through the bus bar 13.
      COPYRIGHT: (C)2004,JPO
    • 解决的问题:提供半导体元件被有效地冷却的半导体器件。 解决方案:金属板19被布置为用螺栓端部加压,螺栓与将半导体芯片11连接到冷却套16的母线13的螺栓18嵌入。作为 结果,螺栓18的夹持压力也作用在螺栓18之间的树脂模具14上并且通过金属板19,同时,对冷却构件的压力均匀地作用在整个汇流条13上。因此, 汇流条13和冷却套16之间的压力接触力提高,以降低它们之间的热阻,因此在半导体芯片11处产生的热通过母线13有效地传递到冷却套16。 版权所有(C)2004,JPO
    • 6. 发明专利
    • Semiconductor apparatus
    • SEMICONDUCTOR APPARATUS
    • JP2006294973A
    • 2006-10-26
    • JP2005115608
    • 2005-04-13
    • Nissan Motor Co Ltd日産自動車株式会社
    • HASHIGUCHI KATSUTOSHIOKADA YASUHIRO
    • H01L23/12H01L25/07H01L25/18H02M7/48
    • H01L2224/48091H01L2224/48227H01L2224/48472H01L2224/49111H01L2224/73265H01L2924/1301H01L2924/13055H01L2924/00014H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a small-sized semiconductor apparatus with bus bars and plural terminals for signal input and output to which a semiconductor device is bonded. SOLUTION: The small-sized semiconductor apparatus is equipped with semiconductor chips 101, 104; bus bars 6c, 6ec to which the semiconductor chips 101, 104 are face-bonded through a conductive bonding material 3; terminal groups 51, 52 connected to the semiconductor chips 101, 104 and the bus bars 6c, 6ec for inputting or outputting signals from these semiconductor chips 101, 104 and these bus bars 6c, 6ec; and resin mold 7 which is integrated with the bus bars 6c, 6ec and the terminal groups 51, 52. The terminal groups 51, 52 comprise the first terminal 51 which is connected to the semiconductor chips 101, 104 through a bonding wire 4; and the second terminal 52 which is integrated with the bus bars 6c, 6ec. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:为了提供具有母线的小型半导体装置和用于信号输入和输出的多个端子,半导体器件被结合到其上。

      解决方案:小型半导体装置配备有半导体芯片101,104; 汇流条6c,6c,半导体芯片101,104通过导电接合材料3面对着; 连接到半导体芯片101,104的端子组51,52和用于输入或输出来自这些半导体芯片101,104和这些汇流条6c,6c的信号的汇流条6c,6c; 以及与母线6c,6c和端子组51,52一体化的树脂模7。端子组51,52包括通过接合线4连接到半导体芯片101,104的第一端子51; 以及与母线6c,6c集成的第二端子52。 版权所有(C)2007,JPO&INPIT

    • 7. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2007142067A
    • 2007-06-07
    • JP2005332356
    • 2005-11-17
    • Nissan Motor Co Ltd日産自動車株式会社
    • TAKENAKA HATSUNAEHIRA ATSUSHIOKADA YASUHIROUENO DAIGOOGAWA KAZUHIRO
    • H01L23/36
    • PROBLEM TO BE SOLVED: To provide a semiconductor device with improved heat transfer performance, without causing degradation in insulation.
      SOLUTION: An aluminum oxide layer 21 is formed on part of a cooler 13 by anode oxidation, and a polyimide layer 22 is formed thereon by electrodeposition coating, thereby integrating an insulation layer 20 that consists of the aluminum oxide layer 21 and the polyimide layer 22 with the cooler 13. A bus bar 12, having a semiconductor module 11 that contains a semiconductor element jointed, is mounted on the insulation layer 20. Since the cooler 13 and the insulation layer 20 are unified, there is no longer contact interfaces between the layer 20 and the cooler 13, thermal resistance on the interface is eliminated, and accordingly, heat transfer characteristics are improved by the corresponding amount.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供具有改善的传热性能的半导体器件,而不会导致绝缘的劣化。 解决方案:通过阳极氧化在冷却器13的一部分上形成氧化铝层21,通过电沉积涂膜在其上形成聚酰亚胺层22,从而将由氧化铝层21和 具有冷却器13的聚酰亚胺层22.在绝缘层20上安装有具有接合的半导体元件的半导体模块11的汇流条12.由于冷却器13和绝缘层20是统一的,所以不再接触 层20和冷却器13之间的界面消除了界面上的热阻,因此传热特性提高了相应的量。 版权所有(C)2007,JPO&INPIT
    • 8. 发明专利
    • Pressure contact semiconductor device
    • 压力接触半导体器件
    • JP2006019637A
    • 2006-01-19
    • JP2004198116
    • 2004-07-05
    • Nissan Motor Co Ltd日産自動車株式会社
    • UENO DAIGOOKADA YASUHIRO
    • H01L21/52
    • PROBLEM TO BE SOLVED: To provide a pressure contact semiconductor device which can prevent nonuniform surface pressure distributions on the front and rear surfaces of a semiconductor chip.
      SOLUTION: The surface 3a of an upper heat buffering plate 3 contacted with a first pressure contact electrode 7 is a concave curved surface, and the tip end 7b of the projection 7a of the first pressure contact electrode 7 pushing the upper heat buffering plate 3 has a convex curved surface formed into a shape complementary to the surface 3a. Thus, the both of the buffering plate 3 and the first pressure contact electrode 7 can be fitted each other at their concave and convex surfaces. The curvature radius of the surface 3a is nearly equal to the curvature radius of the tip end 7b. Consequently, even the processing accuracy or the like of the first pressure contact electrode 7 causes the first pressure contact electrode 7 to be contacted with the upper heat buffering plate 3 to be tilted thereto, this causes less change in the contact condition between the surface 3a and the tip end 7b.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种可以防止半导体芯片的前表面和后表面上的不均匀表面压力分布的压接半导体器件。 解决方案:与第一压力接触电极7接触的上部缓冲板3的表面3a是凹形弯曲表面,并且第一压力接触电极7的突起7a的尖端7b推动上部热缓冲 板3具有形成为与表面3a互补的形状的凸曲面。 因此,缓冲板3和第一压力接触电极7可以在它们的凹凸表面彼此嵌合。 表面3a的曲率半径几乎等于尖端7b的曲率半径。 因此,即使第一压接电极7的加工精度等使第一压接电极7与上部缓冲板3接触而倾斜,因此导致表面3a 和末端7b。 版权所有(C)2006,JPO&NCIPI
    • 9. 发明专利
    • Mounting structure for semiconductor device
    • 半导体器件的安装结构
    • JP2002373970A
    • 2002-12-26
    • JP2001181481
    • 2001-06-15
    • Nissan Motor Co Ltd日産自動車株式会社
    • OKADA YASUHIRONARUSE MIKIOFURUKAWA SUKEYUKISHIBUYA AKIHIRO
    • H01L25/07H01L23/48H01L25/18
    • H01L2224/0603H01L2224/48091H01L2224/48472H01L2224/49111H01L2224/49175H01L2224/73265H01L2924/1305H01L2924/13055H01L2924/13091H01L2924/30107H01L2924/00014H01L2924/00
    • PROBLEM TO BE SOLVED: To prevent a bottom from becoming convex upward in a semiconductor module formed by stacking metallic electrode plates where semiconductor chips are joined. SOLUTION: Metallic electrode plates 10A, 20A, and 30A are molded on a resin base 50A, an IGBT 40p and an FWD 42p are joined to a main part 11A of the metallic electrode plate 10A, and an IGBT 40n and an FWD 42n are joined to a lower stage 22A of the metallic electrode plate 20A. With respect to the bottom of the module where the main part 11A and the lower stage 22A are exposed, a connecting portion 12A of the metallic electrode plate 10A and a connecting portion 32A of the metallic electrode plate 30A rise vertically on the end of the resin base, are opposed to each other, and protrude from the resin base in a perpendicular direction to a paper face to serve as an external connecting portion. Since rising portions of the connecting portions are not formed at the center, shrinkage is not prevented on a side wall of a case resin base during cooling after molding, and the bottom of the module becomes convex downward and comes into contact with a heatsink 58A.
    • 要解决的问题:为了防止在通过堆叠半导体芯片接合的金属电极板形成的半导体模块中向下凸起。 解决方案:将金属电极板10A,20A和30A模制在树脂基座50A上,将IGBT 40p和FWD 42p接合到金属电极板10A的主体部分11A,并且连接IGBT 40n和FWD 42n 到金属电极板20A的下段22A。 对于主体部11A和下侧22A露出的模块的底部,金属电极板10A的连接部12A和金属电极板30A的连接部32A在树脂的端部上升 基部彼此相对,并且从与树脂基板垂直的方向从纸面突出以用作外部连接部。 由于连接部分的上升部分不形成在中心,因此在模制后的冷却期间壳体树脂基体的侧壁上的收缩不会被阻止,并且模块的底部向下凸起并与散热器58A接触。
    • 10. 发明专利
    • Molded resin item covered with cloth and method of molding the same
    • 用树脂覆盖的模制树脂项目及其模制方法
    • JPS5729422A
    • 1982-02-17
    • JP10568080
    • 1980-07-31
    • Kanto Seiki KkNissan Motor Co Ltd
    • TSUJIMURA TSUNETOSHIFUKUNAGA YUKIOOKADA YASUHIROFURUYA NOBUONAKABAYASHI ISAOGOTOU TETSUO
    • B29C45/00B29C51/00B29C51/10B29C51/14B29C51/30
    • PURPOSE: To reduce the occurrence of tearing or creasing of cloth and to use an injection mold as a vacuum mold so as to increase the operation efficiency, by sucking under pressure a piled body of a piece of cloth and a resin sheet onto a stationary mold of injection molds, closing a movable mold onto the stationary mold, and injecting a molten resin into said molds.
      CONSTITUTION: On the piece of cloth 2 is piled the resin sheet 3 to prepare the piled body 1, the piled body 1 is fixed to a fixing frame 4, and the piled body is set between the opened stationary mold 5 and movable mold 6 of the injection molds with the cloth 2 facing to the stationary mold 5. Then the piled body 1 is heated to be softened. Thereafter, the piled body 1 is covered onto the stationary mold 5, and the fixing frame 4 is supported. Then the piled body 1 is sucked to the stationary mold 5 to be closely adhered thereto, the movable mold 6 is closed, and then a molten resin is injected into a space 11 between the molds and solidified to obtain the molded resin item 13 covered with cloth.
      COPYRIGHT: (C)1982,JPO&Japio
    • 目的:为了减少布的撕裂或褶皱的发生,并且使用注射模具作为真空模具以提高操作效率,通过在压力下将堆叠的一块布和树脂片体吸入固定模具 的注射模具,将可移动模具封闭在固定模具上,并将熔融树脂注入所述模具中。 构成:在布2上堆积树脂片3以准备堆叠体1,将堆叠体1固定在固定框架4上,将堆叠体设置在打开的固定模具5和活动模具6之间 注射模具用布2面向固定模具5,然后将堆叠体1加热软化。 此后,堆叠体1被覆盖在固定模具5上,固定框架4被支撑。 然后将堆叠体1吸入固定模具5以紧密粘合到其上,将可动模具6关闭,然后将熔融树脂注入到模具之间的空间11中并固化,得到被覆盖的模制树脂制品13 布。