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1. 发明专利

JP2006310571A Circuit package 审中-公开
标题翻译：电路封装
公开(公告)号：JP2006310571A
公开(公告)日：2006-11-09
申请号：JP2005131761
申请日：2005-04-28
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： FURUKAWA SUKEYUKI , SHIBUYA AKIHIRO
IPC分类号： H01L25/07 , H01L25/18 , H02M7/48
CPC分类号： H01L2224/48091 , H01L2224/49111 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a circuit package for power converters (MCI) by switching which carries out surge voltage control and switching loss reduction in a circuit package. SOLUTION: A first switching circuit (SW1: 1, 2) is welded by pressure to a first bus bar (11) for connecting one positive terminal of a first power supply and another terminal of a first bidirectional switching circuit, with a third bus bar (14) for connecting a third terminal of a switching circuit and a load. The second switching circuit (SW2: 3, 4) is welded by pressure by the second bus bar (12) and a third bus bar that connect a positive terminal of the second power supply, and one terminal of the second switching circuit. The third switching circuit (SW3: 5, 6) is welded by pressure by a fourth bus bar (13) and the third bus bar that connect a terminal of another side of the third switching circuit, and a negative pole which is the common potential of the first and second power supplies. These first, second, and third switching circuits are formed as one package. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过切换实现电路封装中的浪涌电压控制和开关损耗降低来提供用于功率转换器（MCI）的电路封装。解决方案：通过压力将第一开关电路（SW1：1,2）焊接到第一母线（11），用于将第一电源的一个正极和第一双向开关电路的另一个端子连接到第一母线第三母线（14），用于连接开关电路的第三端子和负载。第二开关电路（SW2：3,4）通过第二母线（12）的压力和连接第二电源的正极端子和第二开关电路的一个端子的第三母线焊接。第三开关电路（SW3：5,6）由第四母线（13）和连接第三开关电路另一端的端子的第三母线和作为公共电位的负极的第三母线的第一和第二电源。这些第一，第二和第三开关电路形成为一个封装。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2005057108A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005057108A
公开(公告)日：2005-03-03
申请号：JP2003287461
申请日：2003-08-06
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： SHIBUYA AKIHIRO , OKADA YASUHIRO , FURUKAWA SUKEYUKI , NARUSE MIKIO , EHIRA ATSUSHI , OGAWA KAZUHIRO
IPC分类号： H01L23/473 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor for securing insulation even when any pin hall or crack is generated in an insulator. SOLUTION: This semiconductor 1 is provided with a semiconductor module 10 formed of a semiconductor chip 11, bus bars 13c, 13e and 13ec and a resin mold 14, a cooling jacket 40 for radiating heat generated by the semiconductor module 10 by a cooling medium 41, and an insulator 20 constituted by laminating two insulating sheets 21 and 22 having electric insulating property and high thermal conductivity for securing insulation between the semiconductor module 10 and the cooling jacket 40. The semiconductor module 10 and the cooling jacket 40 are fixed with a volt 50 in a status that the semiconductor 20 is put between the semiconductor module 10 and the cooling jacket 40. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：即使在绝缘体中产生任何引脚厅或裂纹时，也提供用于确保绝缘的半导体。解决方案：该半导体1设置有由半导体芯片11，母线13c，13e和13e以及树脂模具14形成的半导体模块10，用于通过半导体模块10辐射由半导体模块10产生的热量的冷却套40 冷却介质41和绝缘体20，其通过层叠具有电绝缘性和高导热性的两个绝缘片21和22构成，用于确保半导体模块10与冷却套40之间的绝缘。半导体模块10和冷却套40固定具有半导体20放置在半导体模块10和冷却套40之间的状态的伏特50。（C）2005，JPO和NCIPI

3. 发明专利

JP2009004685A Semiconductor apparatus 有权
标题翻译： SEMICONDUCTOR APPARATUS
公开(公告)号：JP2009004685A
公开(公告)日：2009-01-08
申请号：JP2007166175
申请日：2007-06-25
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： UENO DAIGO , FURUKAWA SUKEYUKI
IPC分类号： H01L25/07 , H01L25/18 , H02M7/48
CPC分类号： H01L24/33 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor apparatus capable of being miniaturized while assuring a fuse function required for the semiconductor apparatus. SOLUTION: A semiconductor apparatus has a semiconductor element in which electrodes are formed on both surfaces, a bus bar 4a connected to an electrode surface of the semiconductor element, and a cooler 12 arranged on a surface of the bus bar 4a which is opposite to the surface connected to the semiconductor element. In the semiconductor apparatus, the bus bar 4a has a fuse part 14a which is a part having a smaller cross-sectional area in a surface vertical to a current flow direction. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够小型化的半导体装置，同时确保半导体装置所需的保险丝功能。解决方案：半导体装置具有半导体元件，其中电极形成在两个表面上，连接到半导体元件的电极表面的母线4a和布置在母线4a的表面上的冷却器12 与连接到半导体元件的表面相对。在半导体装置中，汇流条4a具有在垂直于当前流动方向的表面中具有较小横截面面积的部分的熔丝部分14a。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2005251921A Heat radiating structure and its manufacturing method 有权
标题翻译：热辐射结构及其制造方法
公开(公告)号：JP2005251921A
公开(公告)日：2005-09-15
申请号：JP2004059140
申请日：2004-03-03
申请人： Dow Corning Asia Ltd , Fuji Polymer Industries Co Ltd , Nissan Motor Co Ltd , ダウコーニングアジア株式会社 , 富士高分子工業株式会社 , 日産自動車株式会社
发明人： SHIBUYA AKIHIRO , FURUKAWA SUKEYUKI , NARUSE MIKIO , EHIRA ATSUSHI , OGAWA KAZUHIRO , OTA HIROTOMO , ABE KAZUYOSHI , IKEZAWA ATSUSHI , KAKEHI TORU
IPC分类号： H05K7/20 , C09K5/14 , H01L21/48 , H01L23/34 , H01L23/36 , H01L23/373 , H01L25/07
CPC分类号： H01L23/3737 , C09K5/14 , H01L23/3735 , H01L24/29 , H01L24/32 , H01L25/072 , H01L2224/32013
摘要： PROBLEM TO BE SOLVED: To provide a heat radiating structure, capable of effectively radiating heat from a heat generating body, such as a semiconductor device or the like, while maintaining electrical insulation over a long period of time.
SOLUTION: In the radiating structure, a heat generator 11 and a heat radiator 2 are integrated via an electrically insulating and heat conducting sheet 7 on at least one of which a heat conductive grease 8 is coated, and the heat-conducting sheet 7 and the electrically insulating and heat conductive grease 8 are insoluble to each other.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够有效地从诸如半导体装置等的发热体辐射热量的热辐射结构，同时保持长时间的电绝缘。解决方案：在辐射结构中，热电偶11和散热器2通过电绝缘导热片7在其中涂覆有导热油脂8中的至少一个上而被整合，导热片电绝缘导热油脂8彼此不溶。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005175074A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005175074A
公开(公告)日：2005-06-30
申请号：JP2003410477
申请日：2003-12-09
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： FURUKAWA SUKEYUKI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/32225
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having three or more semiconductor chips in parallel wherein a difference in temperatures of the semiconductor chips is made small. SOLUTION: The semiconductor device is provided with five IGBT chips that are arranged in parallel. The IGBT chips 12B-12D arranged inside the parallel arrangement are made smaller in area than the IGBT chips 12A and 12E arranged on both ends of the parallel arrangement. As a result, when compared with a case when the IGBT chips 12A-12E are equal in area to each other, a current flowing in the IGBT chips 12B-12D arranged inside becomes smaller, and a difference in temperatures of the IGBT chips 12A-12E is made small, and a temperature increase of the IGBT rising up to the highest temperature is reduced than heretofore. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有并联的三个或更多个半导体芯片的半导体器件，其中使半导体芯片的温度差变小。解决方案：半导体器件设置有并联布置的五个IGBT芯片。布置在并联装置内的IGBT芯片12B-12D的面积比布置在并联装置两端的IGBT芯片12A和12E的面积小。结果，与IGBT芯片12A-12E的面积相等的情况相比，在内部配置的IGBT芯片12B-12D中流动的电流变小，IGBT芯片12A〜 12E变小，并且升高到最高温度的IGBT的温度升高比迄今为止降低。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004363450A Electromagnetic wave shield casing and method of producing the same 有权
标题翻译：电磁波屏蔽壳及其制造方法
公开(公告)号：JP2004363450A
公开(公告)日：2004-12-24
申请号：JP2003162095
申请日：2003-06-06
申请人： Koojin:Kk , Nissan Motor Co Ltd , 日産自動車株式会社 , 株式会社コージン
发明人： NARUSE MIKIO , SHIBUYA AKIHIRO , FURUKAWA SUKEYUKI , KOSHIBA KIYOBUMI
IPC分类号： B29C33/14 , B29C45/14 , B29C45/16 , B29C45/26 , H05K9/00
摘要： PROBLEM TO BE SOLVED: To provide a method of producing an electromagnetic wave shield casing where infiltration of water from external environment is prevented surely.
SOLUTION: In a first molding process, the back surface of an insertion material 4 is supported by a surface 108 formed by a metallic mold 10B. Thus, when resin for first molding is poured into the recess 100 of a metallic mold 10A, the insertion material 4 is never deformed. By first molding, an outer wall 6 having a projecting part 6a projecting on the side of an inner wall and a cavity 6b opposing a through hole 41a is formed. In a second molding process, when resin for second molding is poured into the recess 104 of a metallic mold 11B, the resin flows into the cavity 6b from the through hole 41a. Since the insertion material 4 is supported by the outer wall 6 in the case of second molding, the insertion material 4 is never deformed due to pouring of the resin.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种防止来自外部环境的水渗入的电磁波屏蔽壳体的制造方法。解决方案：在第一模塑工艺中，插入材料4的背面由金属模具10B形成的表面108支撑。因此，当用于第一次成型的树脂注入到金属模具10A的凹部100中时，插入材料4不会变形。通过第一成型，形成具有在内壁侧突出的突出部6a和与通孔41a相对的空腔6b的外壁6。在第二成型工序中，当第二成型用树脂注入到金属模具11B的凹部104中时，树脂从通孔41a流入空腔6b。由于插入材料4在第二次成形的情况下被外壁6支撑，所以插入材料4由于树脂的浇注而不会变形。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004311566A Semiconductor device and its manufacturing method 审中-公开
公开(公告)号：JP2004311566A
公开(公告)日：2004-11-04
申请号：JP2003100229
申请日：2003-04-03
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： OGAWA KAZUHIRO , EHIRA ATSUSHI , SHIBUYA AKIHIRO , FURUKAWA SUKEYUKI , NARUSE MIKIO
IPC分类号： H01L23/373 , H01L23/36
CPC分类号： H01L2224/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a semiconductor chip that is excellent in cooling performance, and to provide its manufacturing method. SOLUTION: The semiconductor device is equipped with a non-insulated semiconductor module 2 provided with the built-in semiconductor chip, a cooling unit 3 cooling down the semiconductor chip, and an insulating sheet 6 interposed between the non-insulated semiconductor module 2 and the cooling unit 3. The insulating sheet 6 is permeated with silicone oil 7, and furthermore the silicone oil 7 is interposed between the insulating sheet 6 and a bus bar 5 on the side of non-insulated semiconductor module 2 and between the insulating sheet 6 and the cooling unit 3. COPYRIGHT: (C)2005,JPO&NCIPI

8. 发明专利

JP2013110357A Power converter 审中-公开
标题翻译：电源转换器
公开(公告)号：JP2013110357A
公开(公告)日：2013-06-06
申请号：JP2011256280
申请日：2011-11-24
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： NINOMIYA TAKESHI , FURUKAWA SUKEYUKI , ABE MASANOBU , FUJITA MASAHITO
IPC分类号： H01L23/473 , H01L25/07 , H01L25/18 , H05K7/20
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent decrease in the clamping force of a member clamping a heat receiving plate and a cover case, in a power converter having an insulation member provided between the heat receiving plate and the cover case.SOLUTION: In a power converter including an insulation member (20) provided between a heat receiving plate (14) and a case (19), the heat receiving plate (14) includes an insertion hole (17) into which the shaft (16b) of a clamping member is inserted, and a contact part (14e) which comes into contact with a part (16a) of the clamping member other than the shaft on the periphery of the insertion hole and being pressed thereby. The case (19) includes a recess (25) facing the insertion hole (17) of the heat receiving plate, and a hole (21) which communicates with the recess and into which the shaft (16b) of the clamping member is inserted. The recess (25) has a cross section larger than that of the contact part (14e) in the direction along the surface (14c) of the heat receiving plate (14).
摘要翻译：要解决的问题：为了防止夹持受热板和盖壳的部件的夹紧力降低，在具有设置在受热板和盖壳之间的绝缘部件的功率转换器中。解决方案：在包括设置在受热板（14）和壳体（19）之间的绝缘构件（20）的功率转换器中，热接收板（14）包括插入孔（17），轴插入夹持构件（16b）和接触部（14e），该接触部（14e）与插入孔周边的轴之外的夹持构件的部分（16a）接触并被按压。壳体（19）包括面对热接收板的插入孔（17）的凹部（25）和与凹部连通的孔（21），夹紧构件的轴（16b）插入该孔中。所述凹部（25）的横截面大于所述接触部（14e）沿着所述受热板（14）的表面（14c）的方向的横截面。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2006332176A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2006332176A
公开(公告)日：2006-12-07
申请号：JP2005150889
申请日：2005-05-24
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： NAMIKI KAZUSHIGE , FURUKAWA SUKEYUKI
IPC分类号： H01L29/739 , H01L21/822 , H01L27/04 , H01L27/088 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device where performance of a semiconductor element can sufficiently be derived.
SOLUTION: A sensor diode 302 is arranged in an almost center of a region which is press-fitted by a press fitting heat spreader 304 so that a periphery is surrounded by an IGBT cell 1001. A groove 305 is disposed on the lower face side of the press-fitting heat spreader 304 which is brought into contact with an emitter electrode 1007 of IGBT 101, so that the press-fitting heat spreader 304 does not depress the sensor diode 302 and a temperature sensor harness 303. Thus, responsiveness of a temperature detected by the sensor diode 302 can be improved with respect to a temperature change of IGBT 101 by heat generation of an active region 301. Thus, unnecessary margin is not required as in a conventional semiconductor device at the time of protecting a temperature rise of IGBT 101 based on the temperature detected by the sensor diode 302, and performance of IGBT 101 can sufficiently be derived.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供可以充分得到半导体元件的性能的半导体器件。解决方案：传感器二极管302布置在通过压配热扩散器304压配合的区域的几乎中心，使得周边被IGBT单元1001围绕。槽305设置在下部与金属氧化物半导体场效应管101的发射电极1007接触的压入式散热器304的正面，使得压配散热器304不压下传感器二极管302和温度传感器线束303.因此，响应性可以通过有源区域301的发热来改善由传感器二极管302检测到的温度，因为不需要余量，如在常规的半导体器件中保护温度时不需要的余量基于由传感器二极管302检测到的温度，IGBT 101的上升，IGBT 101的性能得到充分的提高。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2004031485A Semiconductor device 审中-公开
公开(公告)号：JP2004031485A
公开(公告)日：2004-01-29
申请号：JP2002182781
申请日：2002-06-24
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： NAKAMURA HIROKI , HIROSE MIKIO , FURUKAWA SUKEYUKI
IPC分类号： H01L23/34 , H01L23/36 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/32225 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a temperature sensor wherein heat from a semiconductor chip is efficiently delivered to the temperature sensor so that a temperature change in the semiconductor chip can be detected with high accuracy. SOLUTION: A recessed part 9 is formed on one principal face 2a of a heat dissipation plate 2 acting like a heat sink, and a good heat conduction layer 3 made of a material with a thermal conductivity higher than that of the heat dissipation plate 2 is deposited in the recessed part 9. Then a metallic wire layer 5 is provided on the good heat conduction layer 3 via an insulation layer 4, the semiconductor chip 6 is mounted on the metallic wire layer 5 and the temperature sensor 10 is closely fitted to the good heat conduction layer 3. COPYRIGHT: (C)2004,JPO

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