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1. 发明专利

JP2009130169A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2009130169A
公开(公告)日：2009-06-11
申请号：JP2007304197
申请日：2007-11-26
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： MIYATA HIDEAKI , NAMIKI KAZUSHIGE , NARUSE MIKIO
IPC分类号： H01L23/28
摘要： PROBLEM TO BE SOLVED: To prevent noise from being generated by securing fixation strength of a cover to a case containing a semiconductor element.
SOLUTION: The semiconductor element 35 is sealed by charging a silicon resin G in a gel state in the case 10, and the cover 20 has its center portion fitted to the case 10 with a bolt 30. Step portions 24 projecting into the case are provided at both lengthwise ends of the cover 20, and reverse surfaces 25 of the step portions are brought into contact with the silicon resin G in the gel state. The fixation strength of the cover 20 to the case 10 is secured by the bolt fitting and both ends of the cover 20 are in contact with the silicon resin G in the gel state, so vibrations are attenuated through its viscosity to suppress resonance of the cover 20.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过将盖的固定强度固定到包含半导体元件的壳体来防止产生噪声。解决方案：通过在壳体10中对凝胶状态的硅树脂G进行充电来密封半导体元件35，并且盖20的中心部分用螺栓30装配到壳体10上。步骤部分24突出到在盖20的长度方向的端部设置壳体，并且台阶部的反面25与凝胶状态的硅树脂G接触。盖20与壳体10的固定强度通过螺栓接头固定，盖20的两端与凝胶状态的硅树脂G接触，因此振动通过其粘度衰减以抑制盖的共振 20.版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009038272A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2009038272A
公开(公告)日：2009-02-19
申请号：JP2007202549
申请日：2007-08-03
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： MIYATA HIDEAKI , NARUSE MIKIO , SHIBUYA AKIHIRO
IPC分类号： H01L23/12
CPC分类号： H01L24/32 , H01L2924/1305 , H01L2924/13055 , H01L2924/351 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with high reliability of a solder layer which bonds a buffer plate for mitigating thermal stress and distortion between a semiconductor element and a metal electrode layer, with the metal electrode layer. SOLUTION: The semiconductor device 1 is provided with the semiconductor element 2, the metal electrode layer 3 and the buffer plate 4. The semiconductor element 2 and the buffer plate 4, and the metal layer 3 and the buffer plate 4 are bonded through the solder layers 5 and 6. On the side face of the buffer plate 4, a groove is formed. The bottom surface of the groove is covered with solder and a solder fillet stress mitigation structure is formed in the groove. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种焊接层的高可靠性的半导体器件，该焊料层与金属电极层结合缓冲板以减轻半导体元件和金属电极层之间的热应力和变形。解决方案：半导体器件1设置有半导体元件2，金属电极层3和缓冲板4.半导体元件2和缓冲板4以及金属层3和缓冲板4被接合通过焊料层5和6.在缓冲板4的侧面形成有凹槽。凹槽的底面被焊料覆盖，并且在凹槽中形成焊点角减轻结构。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2006005292A Pressure contact type semiconductor device 审中-公开
标题翻译：压力接触式半导体器件
公开(公告)号：JP2006005292A
公开(公告)日：2006-01-05
申请号：JP2004182473
申请日：2004-06-21
申请人： Nissan Motor Co Ltd , 日産自動車株式会社
发明人： MIYATA HIDEAKI , OKADA YASUHIRO
IPC分类号： H01L25/10
CPC分类号： H01L2224/40137
摘要： PROBLEM TO BE SOLVED: To provide a pressure contact type semiconductor device where low thermal stress is applied on a first semiconductor chip. SOLUTION: The pressure contact type semiconductor device has a first semiconductor chip 1, a first top buffer 5a and a first underside buffer 6a disposed with the first semiconductor chip 1 being sandwiched between the buffers, and a top electrode plate 3 and an underside electrode plate 4 disposed with the first top buffer 5a, the first semiconductor chip 1, and the first underside buffer 6a being sandwiched between the electrode plates. The first top buffer 5a is directly positioned relative to the top electrode plate 3, the underside electrode plate 4, or the first underside plate 6a by fitting to concave portions 10a and convex portions 11a. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在第一半导体芯片上施加低热应力的压接式半导体器件。解决方案：压力接触型半导体器件具有第一半导体芯片1，第一顶部缓冲器5a和设置在第一半导体芯片1被夹在缓冲器之间的第一下侧缓冲器6a，以及顶部电极板3和设置有第一顶部缓冲器5a，第一半导体芯片1和第一下侧缓冲器6a的下侧电极板4夹在电极板之间。第一顶部缓冲器5a通过装配到凹部10a和凸部11a而相对于顶部电极板3，下侧电极板4或第一下侧板6a直接定位。版权所有（C）2006，JPO＆NCIPI

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