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    • 1. 发明专利
    • Electromagnetic wave shield casing and method of producing the same
    • 电磁波屏蔽壳及其制造方法
    • JP2004363450A
    • 2004-12-24
    • JP2003162095
    • 2003-06-06
    • Koojin:KkNissan Motor Co Ltd日産自動車株式会社株式会社コージン
    • NARUSE MIKIOSHIBUYA AKIHIROFURUKAWA SUKEYUKIKOSHIBA KIYOBUMI
    • B29C33/14B29C45/14B29C45/16B29C45/26H05K9/00
    • PROBLEM TO BE SOLVED: To provide a method of producing an electromagnetic wave shield casing where infiltration of water from external environment is prevented surely.
      SOLUTION: In a first molding process, the back surface of an insertion material 4 is supported by a surface 108 formed by a metallic mold 10B. Thus, when resin for first molding is poured into the recess 100 of a metallic mold 10A, the insertion material 4 is never deformed. By first molding, an outer wall 6 having a projecting part 6a projecting on the side of an inner wall and a cavity 6b opposing a through hole 41a is formed. In a second molding process, when resin for second molding is poured into the recess 104 of a metallic mold 11B, the resin flows into the cavity 6b from the through hole 41a. Since the insertion material 4 is supported by the outer wall 6 in the case of second molding, the insertion material 4 is never deformed due to pouring of the resin.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种防止来自外部环境的水渗入的电磁波屏蔽壳体的制造方法。 解决方案:在第一模塑工艺中,插入材料4的背面由金属模具10B形成的表面108支撑。 因此,当用于第一次成型的树脂注入到金属模具10A的凹部100中时,插入材料4不会变形。 通过第一成型,形成具有在内壁侧突出的突出部6a和与通孔41a相对的空腔6b的外壁6。 在第二成型工序中,当第二成型用树脂注入到金属模具11B的凹部104中时,树脂从通孔41a流入空腔6b。 由于插入材料4在第二次成形的情况下被外壁6支撑,所以插入材料4由于树脂的浇注而不会变形。 版权所有(C)2005,JPO&NCIPI
    • 2. 发明专利
    • Circuit package
    • 电路封装
    • JP2006310571A
    • 2006-11-09
    • JP2005131761
    • 2005-04-28
    • Nissan Motor Co Ltd日産自動車株式会社
    • FURUKAWA SUKEYUKISHIBUYA AKIHIRO
    • H01L25/07H01L25/18H02M7/48
    • H01L2224/48091H01L2224/49111H01L2924/13055H01L2924/00014H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a circuit package for power converters (MCI) by switching which carries out surge voltage control and switching loss reduction in a circuit package. SOLUTION: A first switching circuit (SW1: 1, 2) is welded by pressure to a first bus bar (11) for connecting one positive terminal of a first power supply and another terminal of a first bidirectional switching circuit, with a third bus bar (14) for connecting a third terminal of a switching circuit and a load. The second switching circuit (SW2: 3, 4) is welded by pressure by the second bus bar (12) and a third bus bar that connect a positive terminal of the second power supply, and one terminal of the second switching circuit. The third switching circuit (SW3: 5, 6) is welded by pressure by a fourth bus bar (13) and the third bus bar that connect a terminal of another side of the third switching circuit, and a negative pole which is the common potential of the first and second power supplies. These first, second, and third switching circuits are formed as one package. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:通过切换实现电路封装中的浪涌电压控制和开关损耗降低来提供用于功率转换器(MCI)的电路封装。 解决方案:通过压力将第一开关电路(SW1:1,2)焊接到第一母线(11),用于将第一电源的一个正极和第一双向开关电路的另一个端子连接到第一母线 第三母线(14),用于连接开关电路的第三端子和负载。 第二开关电路(SW2:3,4)通过第二母线(12)的压力和连接第二电源的正极端子和第二开关电路的一个端子的第三母线焊接。 第三开关电路(SW3:5,6)由第四母线(13)和连接第三开关电路另一端的端子的第三母线和作为公共电位的负极的第三母线 的第一和第二电源。 这些第一,第二和第三开关电路形成为一个封装。 版权所有(C)2007,JPO&INPIT
    • 4. 发明专利
    • Semiconductor apparatus
    • SEMICONDUCTOR APPARATUS
    • JP2009004685A
    • 2009-01-08
    • JP2007166175
    • 2007-06-25
    • Nissan Motor Co Ltd日産自動車株式会社
    • UENO DAIGOFURUKAWA SUKEYUKI
    • H01L25/07H01L25/18H02M7/48
    • H01L24/33H01L2924/1305H01L2924/13055H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a semiconductor apparatus capable of being miniaturized while assuring a fuse function required for the semiconductor apparatus. SOLUTION: A semiconductor apparatus has a semiconductor element in which electrodes are formed on both surfaces, a bus bar 4a connected to an electrode surface of the semiconductor element, and a cooler 12 arranged on a surface of the bus bar 4a which is opposite to the surface connected to the semiconductor element. In the semiconductor apparatus, the bus bar 4a has a fuse part 14a which is a part having a smaller cross-sectional area in a surface vertical to a current flow direction. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供能够小型化的半导体装置,同时确保半导体装置所需的保险丝功能。 解决方案:半导体装置具有半导体元件,其中电极形成在两个表面上,连接到半导体元件的电极表面的母线4a和布置在母线4a的表面上的冷却器12 与连接到半导体元件的表面相对。 在半导体装置中,汇流条4a具有在垂直于当前流动方向的表面中具有较小横截面面积的部分的熔丝部分14a。 版权所有(C)2009,JPO&INPIT
    • 6. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2005175074A
    • 2005-06-30
    • JP2003410477
    • 2003-12-09
    • Nissan Motor Co Ltd日産自動車株式会社
    • FURUKAWA SUKEYUKI
    • H01L25/07H01L25/18
    • H01L2224/32225
    • PROBLEM TO BE SOLVED: To provide a semiconductor device having three or more semiconductor chips in parallel wherein a difference in temperatures of the semiconductor chips is made small. SOLUTION: The semiconductor device is provided with five IGBT chips that are arranged in parallel. The IGBT chips 12B-12D arranged inside the parallel arrangement are made smaller in area than the IGBT chips 12A and 12E arranged on both ends of the parallel arrangement. As a result, when compared with a case when the IGBT chips 12A-12E are equal in area to each other, a current flowing in the IGBT chips 12B-12D arranged inside becomes smaller, and a difference in temperatures of the IGBT chips 12A-12E is made small, and a temperature increase of the IGBT rising up to the highest temperature is reduced than heretofore. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种具有并联的三个或更多个半导体芯片的半导体器件,其中使半导体芯片的温度差变小。 解决方案:半导体器件设置有并联布置的五个IGBT芯片。 布置在并联装置内的IGBT芯片12B-12D的面积比布置在并联装置两端的IGBT芯片12A和12E的面积小。 结果,与IGBT芯片12A-12E的面积相等的情况相比,在内部配置的IGBT芯片12B-12D中流动的电流变小,IGBT芯片12A〜 12E变小,并且升高到最高温度的IGBT的温度升高比迄今为止降低。 版权所有(C)2005,JPO&NCIPI
    • 8. 发明专利
    • Power converter
    • 电源转换器
    • JP2013110357A
    • 2013-06-06
    • JP2011256280
    • 2011-11-24
    • Nissan Motor Co Ltd日産自動車株式会社
    • NINOMIYA TAKESHIFURUKAWA SUKEYUKIABE MASANOBUFUJITA MASAHITO
    • H01L23/473H01L25/07H01L25/18H05K7/20
    • H01L2924/0002H01L2924/00
    • PROBLEM TO BE SOLVED: To prevent decrease in the clamping force of a member clamping a heat receiving plate and a cover case, in a power converter having an insulation member provided between the heat receiving plate and the cover case.SOLUTION: In a power converter including an insulation member (20) provided between a heat receiving plate (14) and a case (19), the heat receiving plate (14) includes an insertion hole (17) into which the shaft (16b) of a clamping member is inserted, and a contact part (14e) which comes into contact with a part (16a) of the clamping member other than the shaft on the periphery of the insertion hole and being pressed thereby. The case (19) includes a recess (25) facing the insertion hole (17) of the heat receiving plate, and a hole (21) which communicates with the recess and into which the shaft (16b) of the clamping member is inserted. The recess (25) has a cross section larger than that of the contact part (14e) in the direction along the surface (14c) of the heat receiving plate (14).
    • 要解决的问题:为了防止夹持受热板和盖壳的部件的夹紧力降低,在具有设置在受热板和盖壳之间的绝缘部件的功率转换器中。 解决方案:在包括设置在受热板(14)和壳体(19)之间的绝缘构件(20)的功率转换器中,热接收板(14)包括插入孔(17),轴 插入夹持构件(16b)和接触部(14e),该接触部(14e)与插入孔周边的轴之外的夹持构件的部分(16a)接触并被按压。 壳体(19)包括面对热接收板的插入孔(17)的凹部(25)和与凹部连通的孔(21),夹紧构件的轴(16b)插入该孔中。 所述凹部(25)的横截面大于所述接触部(14e)沿着所述受热板(14)的表面(14c)的方向的横截面。 版权所有(C)2013,JPO&INPIT
    • 9. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2006332176A
    • 2006-12-07
    • JP2005150889
    • 2005-05-24
    • Nissan Motor Co Ltd日産自動車株式会社
    • NAMIKI KAZUSHIGEFURUKAWA SUKEYUKI
    • H01L29/739H01L21/822H01L27/04H01L27/088H01L29/78
    • PROBLEM TO BE SOLVED: To provide a semiconductor device where performance of a semiconductor element can sufficiently be derived.
      SOLUTION: A sensor diode 302 is arranged in an almost center of a region which is press-fitted by a press fitting heat spreader 304 so that a periphery is surrounded by an IGBT cell 1001. A groove 305 is disposed on the lower face side of the press-fitting heat spreader 304 which is brought into contact with an emitter electrode 1007 of IGBT 101, so that the press-fitting heat spreader 304 does not depress the sensor diode 302 and a temperature sensor harness 303. Thus, responsiveness of a temperature detected by the sensor diode 302 can be improved with respect to a temperature change of IGBT 101 by heat generation of an active region 301. Thus, unnecessary margin is not required as in a conventional semiconductor device at the time of protecting a temperature rise of IGBT 101 based on the temperature detected by the sensor diode 302, and performance of IGBT 101 can sufficiently be derived.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供可以充分得到半导体元件的性能的半导体器件。 解决方案:传感器二极管302布置在通过压配热扩散器304压配合的区域的几乎中心,使得周边被IGBT单元1001围绕。槽305设置在下部 与金属氧化物半导体场效应管101的发射电极1007接触的压入式散热器304的正面,使得压配散热器304不压下传感器二极管302和温度传感器线束303.因此,响应性 可以通过有源区域301的发热来改善由传感器二极管302检测到的温度,因为不需要余量,如在常规的半导体器件中保护温度时不需要的余量 基于由传感器二极管302检测到的温度,IGBT 101的上升,IGBT 101的性能得到充分的提高。 版权所有(C)2007,JPO&INPIT